共查询到19条相似文献,搜索用时 171 毫秒
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模拟预失真技术是改善行波管放大器非线性失真的一种有效方法,但补偿精度较低的缺点是制约其进一步发展的关键因素。增益相位独立调节技术和补偿曲线形状调节技术是提升模拟预失真补偿精度的重要技术。提出了一种适用于Ka波段行波管放大器的高精度模拟预失真器,该预失真器采用双路矢量合成式结构,在29~31 GHz 范围内,通过调节二极管偏置电压可以同时实现补偿曲线形状调节和增益相位扩张量独立调节,有效提升了补偿精度。与行波管放大器的联合测试结果表明,在30 GHz 时,该预失真器可以将行波管放大器的增益压缩从5.3 dB 减小到1.2 dB,相位偏移从62°减小到6.5°。线性化后的行波管放大器的非线性失真明显降低,在输出功率回退5 dB 时,三阶互调系数提高了9.3 dB。 相似文献
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放大器的非线性失真特性严重影响信号的传输质量,射频预失真是一种有效改善行波管非线性度的方法。本文利用反并联肖特基二极管完成了X波段预失真线性化器的设计。仿真结果表明,在8.4GHz~8.6GHz频率范围和一定输入功率内,各个频点处增益扩张量保持在6dB左右,工作频带内增益平坦度在1dB以内,相位扩张基本保持在45°左右。 相似文献
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Ku波段模拟预失真线性化器 总被引:1,自引:0,他引:1
提出了一种基于模拟预失真方法的线性化器设计。利用预失真技术设计行波管配用线性化器的数学模型,得出了预失真电路的功率转移特性曲线和相位特性曲线。预失真电路采用上下支路对消结构,通过二极管产生失真信号,并利用2个可调衰减器和可调移相器来调节其幅度和相位,以此补偿功率放大器的AM-AM,AM-PM失真特性,改善输出信号的线性度。此外通过改变二极管的偏压,线性化器能够提供不同种幅度和相位特性的组合方式,用于不同特性的功放。基于该模拟预失真方法设计了行波管线性化器,在给定的动态范围内幅度扩张5 dB,相位扩张40°。 相似文献
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随着通信技术的发展,行波管预失真电路的研究变得越来越重要。该文针对基于肖特基二极管的非线性发生器,首次分析了二极管SPICE(Simulation Program with Integrated Circuit Emphasis)模型参数中零偏压结电容和串联电阻对预失真扩张曲线的影响。对目前的微带预失真电路工作在K波段以下,绝对或相对带宽一般不超过1.8 GHz和4%,需在输入及输出端加隔离器等不足,基于ADS(Advanced Design System)软件设计并加工了一种用于中心频率30 GHz,绝对和相对带宽为2 GHz和6.67% 的毫米波行波管的微带预失真电路。分别测试行波管和级联线性化器后的行波管,29 GHz, 30 GHz和31 GHz的增益和相位压缩量分别可以从7.5 dB和40 , 7.3 dB和50 , 7.1 dB和59改善到3.8 dB和10 , 3.7 dB和12 , 2.4 dB和15以内。双音测试结果表明,为了达到通信中载波与三阶交叉调制分量抑制比(C/IM3)25 dBc的要求,单独行波管在29 GHz, 30 GHz和31 GHz时需分别回退17 dB, 18 dB和18 dB,而加入线性化器后的行波管,只需分别回退12 dB, 9 dB和8 dB,也即加线性化器可改善5 dB, 9 dB和10 dB,极大地提升了行波管的线性度,具有重要工程应用价值。 相似文献
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一种用于微波功放的新型预失真结构 总被引:1,自引:1,他引:0
预失真技术是一种能有效的改善宽带信号线性度的方法。在普通的反向并联二极管预失真技术基础上做出了一定改进,提出了一种新的预失真线性化器电路结构。这种预失器结构简单,可以直接与功放级联,不需要延时线,相移器和衰减器等额外器件。通过调节二极管的偏置电压,电阻值和可调增益放大器,同时控制载波信号和IMD的相位和幅度变化。采用这种预失真器能够有效地补偿微波功放的非线性失真,ADS双音测试表明,IMD3和IMD5分别改善了41 dB和2.4 dB。 相似文献
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基于相移法实现SSB(单边带)调制器理论,设计制造了一种Ka 波段宽带SSB 调制器集成电路。对相移法产生单边带调制信号的原理进行了分析,利用无源电路的3D 电磁仿真分析和ADS 整体电路非线性仿真相结合的方法对调制器进行了优化。设计制造的90°相移电桥网络和同相合成器满足了产生Ka 波段SSB 信号的幅相要求,同时给出了测试结果。调制器在30 ~36GHz 频带内插入损耗臆14dB;载波和对称边带抑制逸15dB;其它边带抑制逸13dB;输入1dB 压缩功率38dBm;外形尺寸18mm×6mm。这种相移法单边带调制器不需要带通滤波器,具有电路简单,载波抑制比高,对相位误差要求不高的优点。 相似文献
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设计了一种带片内变压器、适用于0.05~2.5 GHz频段的宽带低噪声放大器(LNA).电路设计采用了并行的共栅共源放大结构,将从天线接收到的单端输入信号转换为一对差分信号输出给后级链路.针对变压器结构的LNA噪声系数不够低和输出不平衡的问题,采用了缩放技术、噪声消除技术以及两级的全差分放大器作为输出缓冲级,来有效降低电路的噪声系数,提高增益和输出平衡度.电路采用TSMC 0.18μm 1P6M RF CMOS工艺设计仿真和流片,测试结果表明:在0.05 ~ 2.5 GHz频带范围内,该LNA的最高功率增益达24.5 dB,全频段内噪声系数为2.6~4 dB,输入反射系数小于-10 dB,输出差分信号幅度和相位差分别低于0.6dB和1.8°. 相似文献
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采用0.5μm G aA s pHEM T工艺研制的5.2~5.8 GH z有源单片式巴仑芯片,最终测试表明:工作带宽之内,芯片输入输出驻波均小于1.5,两输出端幅度之差最大为0.8 dB(@5.8 GH z),最小为0.08dB(@5.6 GH z),相位之差为174.3(°@5.2 GH z)到180.6(°@5.8 GH z),与理想差分比较,带内误差小于6,°双端输出时具有明显的功率增益,约在1.7~4.95 dB之间,P1dB输出功率为10.5 dBm左右,二次谐波失真比H D2典型值为-30 dB c。 相似文献
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设计了一种宽带圆极化介质谐振器天线,为一种鼠笼形的宽带一分四90毅相移功分微带馈电网络,采用缝隙耦合对介质谐振器顺序旋转耦合馈电。天线结构紧凑、加工简单,仿真和实测结果吻合良好,其阻抗带宽和低于3dB的轴比带宽重叠部分在1.09 GHz-1.83GHz、为50.7%。增益大于3dB 及轴比小于3dB 的波束宽度均达到90°。天线工作频率覆盖四大导航系统,包括中国的北斗系统、美国的GPS 系统、欧洲的伽利略(GALTLEO)系统和俄罗斯的格洛纳斯(GLONASS )系统的频段,天线可应用于全球卫星导航定位系统和无线宽带通信系统中。 相似文献
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提出了一种基于左手传输线的新型Wilkinson巴伦,该巴伦由一个Wilkinson功分器和两条相位响应相差180°的相移
线构成,它具有结构紧凑和宽频带的特点。采用陶瓷基板薄膜加工工艺,制作了一个工作于C波段的Wilkinson巴伦。最后
测试结果显示:从4GHz到6GHz的频率范围内,输入端反射系数|S11|和输出端隔离|S23|均小于-15dB,两输出端口幅度和相
位不平衡性小于0.3dB和±2°,输出端插入损耗|S21|和|S31|大于-4dB。 相似文献
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《Microwave Theory and Techniques》1984,32(10):1280-1288
The variation of transmission phase for single- and dual-gate GaAs MESFET's with bias change and its probable effects on the performance of an active phase shifter have been studied for the frequency range 2 to 4 GHz. from measured S-parameter values for single- and dual-gate transistors, the element values of the equivalent circuits were fitted by using the computer-aided design program SUPER COMPACT. For the normal full-gate voltage range 0 to -2 V at V/sub DS/= 4 V, the single-gate MESFET varies in transmission phase from 142° to 149° at 2 GHz, and from 109° to 119° at 4 GHz. However, with drain voltage varied from 0.3 to 4 V and a constant gate-voltage bias of 0 V, the phase shifts are much larger, 105° to 145° at 2 GHz and 78° to 112° at 4 GHz. this suggests that large phase shifts may be expected in a dual-gate device and this is found to be so. With V/sub DS/= 4 Vand V/sub GS1/= - 1.0 V, variation of control (second) gate bias from 0 to - 1.75 V for the NE463 GaAs MESFET produces a transmission phase variation from 95° to 132° at 2 GHz and 41° to 88° at 4 GHz. Such phase shifts cause both amplitude and phase errors in phase-shifter circuits of the kind where signals from two FET channels are combined in quadrature with their gate voltages controlled to provide 0° to 90° phase control with constant amplitude. For the single-gate FET examined, the expected amplitude and phase errors are 0.30 dB and 6° at 2 GHz, and 0.36 dB and 10° at 4 GHz. If dual-gate FET's are used in similar circuits, the distribution of errors is different. For NE463 devices, the corresponding figures are 0.56 dB and 2° at 2 GHz and 1.2 dB and 3° at 4 GHz. the advantage of the dual-gate configuration is that the input impedance conditions are more constant than for the single-gate configuration. 相似文献
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Olli Kursu Marko Riikola Janne Aikio Timo Rahkonen 《Analog Integrated Circuits and Signal Processing》2007,50(1):13-20
This paper presents the structure, test setup and measured results of a polynomial RF predistorter IC fabricated in a 0.35 μm SiGe BiCMOS process. The predistorter is designed for the base station WCDMA band at 2.1 GHz. The predistortion signal is generated by a 5th-degree complex polynomial. Also a squared envelope is generated that can be used as a baseband injection signal to cancel 2nd-order distortion that typically causes memory effects. The performance of the predistorter was measured by driving a three-stage discrete power amplifier chain by a 2-tone test and a 3.84 MHz wide 3GPP WCDMA modulated signal. The 2-tone test showed more than 20 dB IM3 cancellation and the WCDMA signal’s ACPR was improved by 8 dB. 相似文献
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This paper presents a high-gain and low-power balun-LNA for ultra-wideband receiver operating in the upper band (6–9 GHz). Common gate (CG) preamplifier in front of the active balun can provide input matching and suppress noise from the follow-up stages. Active balun shares bias current with the CG stage to reduce power consumption. Capacitor-cross-coupled buffer is cascaded for signal amplitude and phase correction. The balun-LNA is fabricated in TSMC 130 nm CMOS technology and it consumes 5.5 mA current from a 1.3-V supply including buffer. This balun-LNA can achieve wideband gain from 6.5 to 9.0 GHz and the maximum gain is 23 dB. The input return loss is better than 20 dB from 6.5 to 9.0 GHz. The core area of the LNA is 0.53 mm2. Simulated noise figure of the LNA is under 3.2 dB. 相似文献