一种新颖的同步BUCK芯片过零检测电路的设计

同步BUCK变换器在轻载模式下会出现电感电流倒灌现象,这会使得芯片的效率大大降低。针对这一问题,设计了一款过零检测电路,该电路利用MOS管工作在线性区时的沟道电阻来产生过零检测比较器的负阈值电压,从而有效地限制了电流的倒灌;还设计了边沿隐匿电路,避免电路切换时引起的误触发。该过零检测电路基于0.5μm BCD工艺,在HSPICE软件上仿真验证,当系统温度在0~85℃变化时,负阈值容差为10 mV,过零检测电路性能良好。     

同步整流降压型DC-DC过零检测电路的设计

同步整流降压型DC-DC工作在不连续电感电流模式(DCM)下会出现的电感电流倒灌现象,这种情况会使得整个系统处于一种超过放状态,从而使系统的效率大幅度地下降。针对这一问题,设计实现了一款电感电流过零检测电路。该电路利用失调电阻抵消同步管关断延迟,达到了快速关断同步管的目的,有效地降低了电流倒灌。且该电路正常工作时的静态电流为5μA,其面积仅有0.005 mm2。采用此电路的一款同步BUCK型DC-DC已在韩国Hynix公司的0.5μm CMOS工艺线投片,测试结果证明过零检测电路效果良好。     

用于降压型DC-DC转换器的新颖过零检测电路

针对降压型DC-DC转换器需要工作在电感电流不连续导通模式(DCM)下的场合,设计了一个输出电压自适应的过零检测方案。该方案通过采集输出电压信息来调整检测到电感零电流后的响应时间,使其在输出电压很大时倒灌电流仍然很小。采用0.5μm BCD工艺,在8V输出电压下进行芯片级仿真,结果显示,与传统过零检测电路相比,新电路的倒灌电流减小了66%。     

防倒灌型电源缓启动系统

通信电源系统为了避免上电时瞬间浪涌电流损坏电路元器件,常采用缓启动方案安全上电。文中基于通信系统中电源缓启动电路在热拔插时偶有失效的现象,考虑防止后级储能元件倒灌电流延缓了缓启动系统的关断,通过分立器件搭建门限电压控制电路,结合闭环反馈调节电路来实现系统的安全缓启动,从而解决快速拔插导致的缓启动电路暂时失效而产生的过流问题。该防倒灌型电源缓启动系统电路简单、分立器件成本较低、成功解决了系统单板热插拔引起的缓启动失效问题。     

用于原边反馈反激变换器的电压采样电路设计

设计了一种用于原边反馈反激变换器的电压采样电路,该电路利用一个具有正温度系数的电流去补偿输出整流二极管正向压降的负温度系数,以消除由二极管正向压降的温度系数导致的误差和系统的误操作,电路具有过零检测功能,能够检测次边二极管电流的过零位置,减小由二极管正向压降引起的误差。本电路采用0.5μm BiCMOS工艺,利用Hspice对电路进行仿真。结果表明,本电路能够有效抵消整流二极管80%的温度系数值并准确检测次边电流零点,提高采样精度。     

一种同步BUCK变换器反向限流电路的设计

同步BUCK变换器在轻载模式下会出现电感电流倒灌现象.若是反向电流过大,将会增加系统的导通损耗,降低芯片的效率.针对这一问题,设计了一款反向限流电路,该电路利用NMOS开关管的体效应二极管将负载的能量转移给输入电源,从而有效地限制了电流的倒灌.该反向限流电路基于0.5μm BCD工艺,在HSPICE上进行系统仿真.仿真结果证明,轻载时与不加反向限流电路的系统相比效率提高了2%.     

一种USB电源管理芯片双门限限流保护电路

采用折返式电路,设计了一种适用于USB电源管理芯片的双门限限流保护电路。通过改变参考电流,进而改变比较器参考电压的方式,使系统在发生过流时输出恒定电流,发生短路时实现门限降低,以达到更低的恒定输出电流。采用UMC 0.5 μm CMOS工艺,运用Cadence和Hspice进行仿真验证,温度在-40 ℃～120 ℃变化时,过流门限和短路门限仅变化2.1%和1.5%。不同工艺角下,均满足系统要求。     

开关电源芯片中过温保护技术的研究与实现

在分析温度对开关电源芯片的可靠性、稳定性有严重影响的基础上，利用与绝对温度成正比的PTAT电流检测温度变化的原理，设计了一种新颖的过温保护电路。该电路具有迟滞功能，并且关断和开信阈值可调，同时输入电压变化对温度门限的影响很小。仿真波形显示该电路工作性能优异。最后该电路应用在DC-DC芯片中，采用1．6μm BiCMOS工艺，完全满足芯片设计需要，具有很大的应用前景。     

一种恒定导通时间的开关电源过流保护电路设计

设计了一种适用于恒定导通时间Buck型DC-DC控制器的过流保护电路。采用两个不同限流门限技术,并对门限进行温度补偿。过流后,利用计数器对开关周期计数,当超过设定值持续过流时,实现门限降低,以达到更低的恒定输出电流。基于0.5μm BiCOMS工艺进行系统仿真验证,达到系统要求。     

无锁相环电压全周期过零检测电路的仿真与设计

为了使静止型无功功率补偿器准确计算出系统非线性所需补偿的电流并进行实时补偿,分析了电压全周期过零检测电路的基本原理,给出了一种基于Protel 99SE仿真的无锁相环交流电压全周期过零检测电路,对所提出的电路进行了参数设计、仿真和实验,结果表明设计的无锁相环电压全周期过零检测电路的正确性和可行性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks