High-Temperature Failure Mechanisms of Hot-Pressed Si3N4 and Si3N4/Si3N4-Whisker-Reinforced Composites

The high-temperature flexural strength of hot-pressed silicon nitride (Si₃N₄) and Si₃N₄-whisker-reinforced Si₃N₄-matrix composites has been measured at a crosshead speed of 1.27 mm/min and temperatures up to 1400°C in a nitrogen atmosphere. Load–displacement curves for whisker-reinforced composites showed nonelastic fracture behavior at 1400°C. In contrast, such behavior was not observed for monolithic Si₃N₄. Microstructures of both materials have been examined by scanning and transmission electron microscopy. The results indicate that grain-boundary sliding could be responsible for strength degradation in both monolithic Si₃N₄ and its whisker composites. The origin of the nonelastic failure behavior of Si₃N₄-whisker composite at 1400°C was not positively identified but several possibilities are discussed.     

Preparation of Silicon Nitride-Titanium Nitride and Titanium-Titanium Nitride Composites from (CH3)3SiNHTiCl3-Coated Si3N4 and Ti Particles

[(Trimethylsilyl)amino]titanium trichloride, (CH₃)₃-SiNHTiClj, was isolated as a red-orange crystalline solid in 58% yield from the reaction of TiCl₄ with [(CH₃)₃Si]₂NH in 1:1 molar ratio in dichloromethane at —78°C. Pyrolysis of (CH₃)₃SiNHTiCl₃ at 600°C furnished titanium nitride. This precursor is suitable for the preparation of composites and was employed to prepare Si₃N₄-TiN and Ti-TiN powders by adding Si₃N₄ particles or titanium powders to a solution of (CH₃), SiNHTiCl₃ in dichloromethane, drying and pyrolyzing the resulting solid. This precursor also has been used as a binder to prepare Si₃N₄-TiN and Ti-TiN bodies. High-resolution transmission electron microscopic studies of the Si₃N₄-TiN composite showed that titanium nitride is concentrated on the surface of the Si₃N₄ particles.     

Phase Relations in the Si3N4-Rich Portion of the Si3N4–AlN–Al2O3–Y2O3

The phase relations in the Si₃N₄-rich portion of the Si₃N₄–AlN–Y₂O₃ rystem were investigated using hot-pressed bodies. The one-phase fields of β3 and α, the twophase fields of β+α, β+M (M=melilite), and α+M, and the three-phase fields of β+α+M were observed in the Si₃N₄-rich portion. The α- and β-sialons are not two different compounds but an allotropic transformation phase of the Si–Al–O–N system, and an α solid solution expands and stabilizes with increasing Y₂O₃ content. Therefore, the formulas of the two sialons should be the same.     

Microstructure of Y2O3 Fluxed Hot-Pressed Silicon Nitride

Detailed microstructural analysis of a 10 mol% Y₂O₃ fluxed hot-pressed silicon nitride reveals that, in addition to the yttrium-silicon oxynitride phase located at the multiple Si₃N₄ grain junctions, there is a thin boundary phase 10 to 80 Å wide separating the silicon nitride and the oxynitride grains. Also, X-ray microanalysis from regions as small as 200 Å across demonstrates that the yttrium-silicon oxynitride, Y₂Si(Si₂O₃N₄), phase can accommodate appreciable quantities of Ti, W, Fe, Ni, Co, Ca, Mg, Al, and Zn in solid solution. This finding, together with observations of highly prismatic Si₃N₄ grains enveloped by Y₂Si(Si₂O₃N₄), suggests that densification occurred by a liquid-phase "solution-reprecipitation" process.     

Effect of Grain Size on the Thermal Conductivity of Si3N4

Polycrystalline Si₃N₄ samples with different grain-size distributions and a nearly constant volume content of grain-boundary phase (6.3 vol%) were fabricated by hot-pressing at 1800°C and subsequent HIP sintering at 2400°C. The HIP treatment of hot-pressed Si₃N₄ resulted in the formation of a large amount of ß-Si₃N₄ grains ∼10 µm in diameter and ∼50 µm long, and the elimination of smaller matrix grains. The room-temperature thermal conductivities of the HIPed Si₃N₄ materials were 80 and 102 Wm⁻¹K⁻¹, respectively, in the directions parallel and perpendicular to the hot-pressing axis. These values are slightly higher than those obtained for hot-pressed samples (78 and 93 Wm⁻¹K⁻¹). The calculated phonon mean free path of sintered Si₃N₄ was ∼20 nm at room temperature, which is very small as compared to the grain size. Experimental observations and theoretical calculations showed that the thermal conductivity of Si₃N₄ at room temperature is independent of grain size, but is controlled by the internal defect structure of the grains such as point defects and dislocations.     

Impurity Phases in Hot-Pressed Si3N4

Impurity phases in commercial hot-pressed Si₃N₄ were investigated using transmission electron microscopy. In addition to the dominant, β-Si₃N₄ phase, small amounts of Si₂N₂O, SiC, and WC were found. Significantly, a continuous grain-boundary phase was observed in the ∼ 25 high-angle boundaries examined. This film is ∼ 10 Å thick between, β-Si₃N₄ grains and ∼ 30 Å thick between Si₂N₂O and β-Si₃N₄ grains.     

High/Low Modulus Si3N4-BN Composite for Improved Electrical and Thermal Shock Behavior

High-density Si₃N₄+6% CeO₂ composites with 5 to 50% BN were fabricated by hot-pressing. BN remained as a discrete phase. Dielectric constants were 4 to 8 and loss tangents were 0.0008 to 0.06 for the room temperature to 1100°C range for compositions with 10 to 50% BN. Thermal-expansion values perpendicular to the hot-pressing direction were somewhat less than those of hot-pressed Si₃N₄+6% CeO₂. Flexure strengths at room temperature were considerably lower than those of hot-pressed Si₃N₄+6% CeO₂ but values at 1000°, 1250°, and 1400°C in air were only slightly lower. Young's modulus values were found to decrease with increasing BN content at all temperatures. Better thermal shock resistance was found than for commercial hot-pressed Si₃N₄.     

Carbothermic Synthesis of Monodispersed Spherical Si3N4/SiC Nanocomposite Powder

The synthesis and structure of a monodispersed spherical Si₃N₄/SiC nanocomposite powder have been studied. The Si₃N₄/SiC nanocomposite powder was synthesized by heating under argon a spherical Si₃N₄/C powder. The spherical Si₃N₄/C powder was prepared by heating a spherical organosilica powder in a nitrogen atmosphere and was composed of a mixture of nanosized Si₃N₄ and free carbon particles. During the heat treatment at 1450°C, the Si₃N₄/C powder became a Si₃N₄/SiC composite powder and finally a SiC powder after 8 h, while retaining its spherical shape. The composition of the Si₃N₄/SiC composite powder changed with the duration of the heat treatment. The results of TEM, SEM, and selected area electron diffraction showed that the Si₃N₄/SiC composite powder was composed of homogeneously distributed nanosized Si₃N₄ and SiC particles.     

A Theoretical Estimate of Solution-Precipitation Creep in MgO-Fluxed Si3N4

The creep rate in MgO-fluxed hot-pressed Si₃N₄ is calculated by means of a model which assumes a solution-precipitation mechanism, and by using the kinetic data for the dissolution rate of β-Si₃N₄ in an Mg-Si-O-N glass (which was obtained in independent experiments). Despite simplifying assumptions, the predictions match quite favorably with experimental measurements of creep in hot-pressed Si₃N₄.     

Phase Equilibria in the System Si3N4-SiO2-BeO-Be3N2

The 1780°C isothermal section of the reciprocal quasiternary system Si₃N₄-SiO₂-BeO-Be₃N₂ was investigated by the X-ray analysis of hot-pressed samples. The equilibrium relations shown involve previously known compounds and 8 newly found compounds: Be₆Si³N₈, Be₁₁Si₅N₁₄, Be₅Si²N₆, Be₉Si₃N₁₀, Be₈SiO₄N₄, Be₆O₃N₂, Be₈O₅N₂, and Be₉O₆N₂. Large solid solubility occurs in β-Si₃N₄, BeSiN₂, Be₉Si₃N₁₀, Be₄SiN₄, and β-Be₃N₂. Solid solubility in β-Si₃N₄ extends toward Be₂SiO₄ and decreases with increasing temperature from 19 mol% at 1770°C to 11.5 mol% Be₂SiO₄ at 1880°C. A 4-phase isotherm, liquid +β-Si₃N₄ ( ss )Si₂ON₂+ BeO, exists at 1770°C.     

Controlled Crystallization of Amorphous Si3N4by Ti and CI Additives

Thin films of amorphous Si₃N₄ were prepared by the rf-sputtering method, and the effects of titanium and chlorine additives on its crystallization were examined. When Ti-doped amorphous Si₃N₄ was heated, TiN precipitated at >1100°C; the TiN precipitates promoted the conversion of amorphous Si₃N₄ to β-Si₃N₄. Chlorine led to preferential conversion of amorphous Si₃N₄ to α-Si₃N₄.     

Fabrication and Microstructures of MoSi2 Reinforced–Si3N4 Matrix Composites

Details of the fabrication and microstructures of hot-pressed MoSi₂ reinforced–Si₃N₄ matrix composites were investigated as a function of MoSi₂ phase size and volume fraction, and amount of MgO densification aid. No reactions were observed between MoSi₂ and Si₃N₄ at the fabrication temperature of 1750°C. Composite microstructures varied from particle–matrix to cermet morphologies with increasing MoSi₂ phase content. The MgO densification aid was present only in the Si₃N₄ phase. An amorphous glassy phase was observed at the MoSi₂–Si₃N₄ phase boundaries, the extent of which decreased with decreased MgO level. No general microcracking was observed in the MoSi₂–Si₃N₄ composites, despite the presence of a substantial thermal expansion mismatch between the MoSi₂ and Si₃N₄ phases. The critical MoSi₂ particle diameter for microcracking was calculated to be 3 μm. MoSi₂ particles as large as 20 μm resulted in no composite microcracking; this indicated that significant stress relief occurred in these composites, probably because of plastic deformation of the MoSi₂ phase.     

Phase Relations and Stability Studies in the Si3N4-SiO2-Y2O3 Pseudoternary System

Composite powders were hot-pressed to determine the phase relations in the Si₃N₄-SiO₂-Y₂O₃ pseudoternary system. Four quaternary compounds, Si₃Y₂O₃N₄, YSiO₂N, Y₁₀Si₇O₂₃N₄, and Y₄Si₂O₇N₂, were identified. Studies of polyphase and single-phase materials in this system showed that these 4 compounds are unstable under oxidizing conditions. Materials within the Si₃N₄-Si₂N₂O-Y₂Si₂O₇ compatibility triangle precluded the unstable compounds, and are extremely resistant to oxidation.     

Mechanochemical-Activation-Assisted Combustion Synthesis of α-Si3N4

Combustion synthesis (CS) of α-silicon nitride (Si₃N₄) powders was accomplished at a nitrogen pressure lower than 3 MPa. The combination of mechanical activation and chemical stimulation was effective in enhancing the reactivity of Si powder reactants, which was responsible for the reduction of the minimum nitrogen pressure normally required for the CS of Si₃N₄. This breakthrough indicates that nitriding combustion of silicon in pressurized nitrogen could be promoted by activating the solid reactants instead of by increasing the nitrogen pressure. The phase content of α-Si₃N₄ in the as-synthesized product is over 90 wt%. Scanning electronic microscopy observation showed that the combustion-synthesized Si₃N₄ powders are submicron-sized particles with spherical morphologies.     

Reaction-Bonding Preparation of Si3N4/MoSi2 and Si3N4/WSi2 Composites from Elemental Powders

Si₃N₄/MoSi₂ and Si₃N₄/WSi₂ composites were prepared by reaction-bonding processes using as starting materials powder mixtures of Si-Mo and Si-W, respectively. A presintering step in an At-base atmosphere was used before nitriding for the formation of MoSi₂ and WSi₂; the nitridation in a N₂-base atmosphere was followed after presintering with the total stepwise cycle of 1350°C × 20 h +1400°C × 20 h +1450°C × 2 h. The final phases obtained in the two different composites were Si₃N₄ and MoSi₂ or WSi₂; no free elemental Si and Mo or W were detected by X-ray diffraction.     

Role of Si2N2O in the Passive Oxidation of Chemically-Vapor-Deposited Si3N4

The results of two-step oxidation experiments on chemically-vapor-deposited Si₃N₄ and SiC at 1350°C show that a correlation exists between the presence of a Si₂N₂O interphase and the strong oxidation resistance of Si₃N₄. During normal oxidation, k _p for SiC was 15 times higher than that for Si₃N₄, and the oxide scale on Si₃N₄ was found by SEM and TEM to contain a prominent Si₂N₂O inner layer. However, when oxidized samples are annealed in Ar for 1.5 h at 1500°C and reoxidized at 1350°C as before, three things happen: the oxidation k _p increases over 55-fold for Si₃N₄, and 3.5-fold for SiC; the Si₃N₄ and SiC oxidize with nearly equal k _p's; and, most significant, the oxide scale on Si₃N₄ is found to be lacking an inner Si₂N₂O layer. The implications of this correlation for the competing models of Si₃N₄ oxidation are discussed.     

Effect of Crystallizing the Grain-Boundary Glass Phase on the High-Temperature Strength of Hot-Pressed Si3N4 Containing Y2O3

The effects of fabrication variables on the high-temperature strength of hot-pressed Si₃N₄ containing 5 wt% Y₂O₃ were studied. Materials containing a crystalline grain-boundary phase, formed as a consequence of a high-temperature presintering heat treatment and identified as Si₃N₄·Y₂O₃, had high-temperature strengths significantly superior to those observed for materials containing a glass phase.     

Characteristics of Si3N4-SiO2-Ce2O3 Compositions Sintered in High-pressure Nitrogen

Full-density Si₃N₄-SiO₂-Ce₂O₃ compositions were prepared by sintering with 2.5 MPa nitrogen pressure at temperatures of 1900° and 2090°C. Room-temperature flexural strengths near 700 MPa for sintered material compared favorably with the strength of hot-pressed material. At 1370°C, where flexural strengths as high as 363 MPa were obtained, it was observed that the coarsest structure was the strongest and the finest structure was the weakest. One of the compositions tested, Si₃N₄-8.7 wt% SiO₂-8.3 wt%-Ce₂O₃, was found to have excellent 200-h oxidation resistance at 700°, 1000°, and 1370°C, without incidence of 700° to 1000°C phase instability and cracking.     

Solubility of Si3N4 in Liquid SiO2

The nitrogen solubility in the SiO₂-rich liquid in the metastable binary SiO₂-Si₃N₄ system has been determined by analytical TEM to be 1%–4% of N/(O + N) at 1973–2223 K. Analysis of the near edge structure of the electron energy loss peak indicates that nitrogen is incorporated into the silicate network rather than being present as molecular N₂. A regular solution model with a positive enthalpy of mixing for the liquid was used to match the data for the metastable solubility of N in the presence of crystalline Si₃N₄ and to adjust the computed phase diagram. The solubility of Si₃N₄ in fused SiO₂ is far less than reported in liquid silicates also containing Al, Mg, and/or Y. Apparently, these cations act as modifiers that break anion bridges in the silicate network and, thereby, allow further incorporation of Si₃N₄ without prohibitive amounts of network cross-linking. Finally, indications emerged regarding the diffuse nature of the Si₃N₄-SiO₂ interface that leads to amorphous regions of higher N content.     

Phase Equilibria in the System AlN-Si3N4-Be3N2

An isothermal section of the system AlN-Si₃N₄-Be₃N₂ was investigated at 1760°C. The equilibrium relations involve the previously known compounds of the system Si₃N₄-Be₃N₂ and a newly found complete solid solution between AlN and BeSiN₂.