用光导波方法确定扭曲向列相液晶盒指向矢剖面

利用光导波方法,对不同电压下由棱镜、折射率匹配液及扭曲向列相液晶盒构成的全漏导模进行了实验研究,得到了不同外角所对应的全漏导模的反射光强度实验数据,并由斯涅尔折射定律转化为反射率随内角变化的数据,由此得到实验曲线。通过与多层光学理论给出的理论曲线进行比较,发现两者之间有一个很好的吻合,确定了扭曲向列相液晶盒在不同电压下的指向矢剖面。     

基板锚定特性对液晶盒电容的影响

基板的锚定特性,包括锚定能大小和锚定易取方向,影响液晶指向矢的分布,直接导致液晶盒电容的改变,因此可以通过液晶盒电容的测量确定基板表面的锚定特性。基于液晶弹性理论和变分原理,理论推导弱锚定平行排列向列相和混合排列向列相液晶盒系统的平衡态方程和边界条件,采用差分迭代方法数值模拟得到了液晶盒约化电容随电压、锚定能系数及锚定易取方向变化的曲线。结果表明:液晶盒电容随基板锚定能系数的增加而减小;随预倾角的增加,液晶盒电容随锚定能系数的变化缩小;同一电压和基板锚定能系数下,平行排列向列相液晶盒电容不会大于混合排列向列相液晶的电容。     

挠曲电效应对液晶微波相位调制的影响

液晶微波调制器件的相位调制取决于液晶分子指向矢的分布。液晶指向矢的分布不仅会受基板表面处液晶分子预倾角和锚定能等因素的影响,液晶材料的挠曲电特性同样会影响液晶指向矢分布。基于液晶弹性理论和差分迭代方法,研究了挠曲电效应对平行排列向列相(PAN)液晶微波相位调制的影响,理论推导得到弱锚定PAN液晶盒的平衡态方程,数值模拟给出了不同的预倾角、锚定能和液晶材料的挠曲电特性条件下单位长度微波相移(MPSL)随电压的变化。结果表明MPSL随锚定能系数的减小而增大,A_0=A_d=5×10~(-5)J/m~2时,挠曲电效应e_(11)+e_(33)=5×10~(-11 )C/m对MPSL最大可调范围为20°,0°预倾角对MPSL最大可调范围为17°,MPSL差值最大增加均为9°;预倾角为3°时,MPSL可调范围随挠曲电系数的增大而增大,相对于忽略挠曲电效应情形,强锚定A_0=A_d=10~(-3)J/m~2条件下MPSL始终减小,弱锚定A_0=A_d=5×10~(-5)J/m~2条件下MPSL先减小后增大然后再减小,MPSL差值最大增加为9°。此项研究对液晶微波调制器件设计有一定的指导意义。     

液晶盒的电容特性

液晶盒外加一定的电压,会改变液晶分子的取向排列,这样液晶层的有效介电常数也会随之发生改变。如果把液晶盒看作一个电容器,其电容也会有所改变。本论文理论研究强锚泊混合排列向列相液晶盒的电容特性,基于液晶弹性理论和变分原理,理论推导液晶盒系统的平衡态方程及电容的解析表达式,通过Matlab软件数值模拟了此液晶盒的电容-电压曲线和指向矢分布曲线,并对其电容特性进行了分析。     

平行排列向列相液晶的导波研究

基于透镜扩束系统,应用棱镜耦合技术对液晶层的全漏导模特性进行了研究.采用盒厚为4.6 μm的平行排列向列相液晶盒,其内灌注E7液晶,通过实验给出了平行排列向列相液晶薄层的导波图,进而将实验结果与理论模拟结果进行了比较,理论所预言的液晶波导的导模在实验的导波图上得到了很好的验证.     

混合排列柱状薄层中的向列相液晶指向矢分布的研究

利用向列相液晶弹性理论,研究了混合排列柱状薄层中的向列相液晶指向矢的分布。向列相液晶被限定在两个同心圆柱构成的薄层中,在内外表面施加强锚定及弱锚定边界条件,锚定易取向方向取径向和轴向(垂直柱轴及平行柱轴)的边界条件,得到了四种混合排列柱状薄层模型RsZw、ZwRs、RwZs、ZsRw。基于Frank弹性自由能和Rapini-Papoular近似的表面能,研究了不同锚定强度、不同内半径及不同弹性常数值的指向矢分布,计算机模拟得出指向矢取向的曲线图。由于柱对称性、锚定强度、薄层厚度以及弹性各向异性共同竞争的影响,这四种模型的指向矢分布有着很大的不同。     

平行排列液晶盒的挠曲电效应及一级Fr(e)edericksz转变

基于液晶弹性理论研究了平行排列液晶盒中的挠曲电效应,通过变分理论得到了液晶指向矢满足的微分方程及边界条件.应用差分迭代方法进行了数值求解,得到了液晶指向矢随不同的参数变化的曲线.增大液晶盒厚度、上下基板锚定能系数以及增大预倾角这3种方法,在考虑挠曲电效应对液晶指向矢分布的影响时是等效的.研究了介电效应和挠曲电效应同时作用下的一级Fréedericksz转变问题.当|Δ＜ε| 较大、A较小时,将会发生一级Fréedericksz转变.     

平行排列液晶盒的挠曲电效应及一级Fréedericksz转变

基于液晶弹性理论研究了平行排列液晶盒中的挠曲电效应,通过变分理论得到了液晶指向矢满足的微分方程及边界条件。应用差分迭代方法进行了数值求解,得到了液晶指向矢随不同的参数变化的曲线。增大液晶盒厚度、上下基板锚定能系数以及增大预倾角这3种方法,在考虑挠曲电效应对液晶指向矢分布的影响时是等效的。研究了介电效应和挠曲电效应同时作用下的一级Fr啨edericksz转变问题。当|Δ<ε|较大、A较小时,将会发生一级Fr啨edericksz转变。     

平行排列液晶盒的挠曲电效应及一级Fréedericksz转变

基于液晶弹性理论研究了平行排列液晶盒中的挠曲电效应,通过变分理论得到了液晶指向矢满足的微分方程及边界条件.应用差分迭代方法进行了数值求解,得到了液晶指向矢随不同的参数变化的曲线.增大液晶盒厚度、上下基板锚定能系数以及增大预倾角这3种方法,在考虑挠曲电效应对液晶指向矢分布的影响时是等效的.研究了介电效应和挠曲电效应同时作用下的一级Fréedericksz转变问题.当|Δ＜ε| 较大、A较小时,将会发生一级Fréedericksz转变.     

向列相液晶盒挠曲电效应的理论分析

用解析的方法证明了挠曲电效应对沿面排列的向列相液晶盒的物理效应。在不考虑液晶界面离子吸附的情况下，导出了挠曲电效应引起的表面能，证明了该表面能在上下基板处具有不同的数值，从而引起液晶指向矢分布对中间层对称性破缺。这将会影响液晶盒的光学性质。通过计算机数值模拟表明，挠曲电效应引起的指向矢分布对称性破缺会随着挠曲电效应的增强而增大。     

Performance of a flux locked series SQUID array

The operation of a SQUID array with 100 DC SQUIDs has been demonstrated using a single flux-locked loop. The SQUID array had a maximum dynamic range of ±1.3×10⁸/√(Hz) in the low frequency region, a high slewing rate over a wide frequency range, and an extrinsic white noise energy sensitivity of 6×10^-31J/Hz. These data were obtained with a very simple feedback circuit made from three inexpensive operational amplifiers that operated in the DC-feedback mode. The feedback loop did not have any impedance matching circuit between the SQUID array and the room temperature electronics. Our results show that a SQUID array can have a significant impact on those applications that demand good noise performance and a very high dynamic range     

Analysis of competing mechanisms in transitions between excitedstates in Er-doped integrated waveguides

A new procedure for determining the prevalence of either excited-state absorption (ESA) or nonradiative cooperative energy transfer between erbium ions in transitions between excited states in Er-doped integrated waveguides is presented. These transitions are currently very attractive for the development of upconversion lasers. The procedure is based on the analysis of the dependence on the transition-originating mechanisms of the modulation transfer from the pump to the excited levels' population. The accuracy and validity range of the method are studied numerically using ordinary integrated structures. By using this procedure, the ratio of the contributions of the two competing mechanisms to the ⁴I_13/2 ⇒ ⁴I_9/2 transition is determined from fluorescence measurements on a Er,Ti:LiNbO₃ sample excited by a 1480-nm pump. Moreover, new values of the excited-state pump-absorption cross section from level ⁴I_13/2, σ₂₄ (≈1480 nm) = 0.8 × 10^-26 m², and of the parameter associated with nonradiative cooperative energy transfer between Er³⁺ ions, C₂₂ = 3 × 10^-24 m³ s·^-1, are reported     

Efficient electrooptic modulator in InGaAlAs/InP optical waveguides

A single heterostructure InGaAlAs/InP phase modulator utilizing the quadratic electrooptic effect (QEO) is reported for the first time. The calculated value of the QEO coefficient from the measurements is 3.7×10^-19 m²/V² at 80 meV below the band edge. In addition, the linear electrooptic effect (LEO) coefficient is estimated to be 1.2×10^-12 m/V, which is comparable to that of GaAs. The propagation loss of a single mode ridge waveguide is in the range of 1.5-1.7 dB/cm, which is better than the previously reported value in this material system. The measured single mode phase shifts are 5.5 and 2.8°/V mm for TE and TM polarizations, respectively. These values are the largest reported so far in an InGaAlAs system     

Lasing mode behavior of a single-mode MQW laser injected with TMpolarized light

The lasing mode behavior of a multiple quantum well (MQW) distributed feedback (DFB) laser was measured when intensity-modulated orthogonally polarized transverse magnetic (TM) mode light was injected. The 3-dB bandwidth of the frequency response shows a trend different from that observed with conventional bias current modulation: at high bias currents, it decreases with increasing bias current. The maximum bandwidth of 3 dB was observed when the normalized bias current was 4, and it reached 16 GHz at this bias current. The gain saturation coefficients for the transverse electric (TE) and TM modes estimated from these results were ∈_p^E; 2.5×10^-17 cm³ and ∈_q^E 5.7×10^-18 cm³ for the TE mode, and ∈_p^M: 6.0×10^-17 cm³ and ∈_q^M: 2.0×10^-14 cm³ for the TM mode     

Polarization crosstalk dependence on length in silica-basedwaveguides measured by using optical low coherence interference

We describe a powerful method for precisely measuring polarization crosstalk dependence on length for birefringent waveguides which uses optical low coherence interference between excited and orthogonally coupled light waves. This method is applied to 10-m long silica-based waveguides with the total polarization crosstalks of 8.9×10^-3 and 7.5×10^-3. The spatial resolution is 10 cm and the measurement error for a waveguide part longer than 1 m is ⩽10%. A comparison of measured and theoretical crosstalk curves for the waveguides enables us to confirm that the bends in the waveguides are the main origin of the crosstalk. The polarization crosstalk per bent section is ~4×10^-5     

Measurement of mode couplings and extinction ratios inpolarization-maintaining fibers

Polarization mode couplings in the axial direction are evaluated for polarization-maintaining fibers using optical heterodyne detection. To verify the validity of this approach for fibers with various coupling constants, the method is applied to three fibers with modal birefringence values of 3.0×10^-4, 1.1×10^-4 , and 1.5×10^-4, respectively. The coupling constants in the 1.7×10^-4 m^-1 to 6.4×10^-7 m^-1 range are evaluated with a length resolution of 1 m. The extinction ratios are obtained from the coupling constants averaged over the fiber lengths. These values are in good agreement with the values measured directly from power ratios between the orthogonally polarized modes     

Diamond cold cathode

Diamond cold cathodes have been formed by fabricating mesa-etched diodes using carbon ion implantation into p-type diamond substrates. When these diodes are forward biased, current is emitted into vacuum. The cathode efficiency (emitted current divided by diode current) varies from 2×10^-4 to 1×10^-10 and increases with the addition of 10^-2-torr partial pressure of O₂ into the vacuum system. Current densities of 0.1 to 1 A-cm^-2 are estimated for a diode current of 10 mA. This compares favorably with Si cold cathodes (not coated with Cs), which have efficiencies of ~2×10^-5 and current densities of ~2×10^-2 A-cm^-2. It is believed that higher current densities and efficiencies can be obtained with more efficient cathode designs and an ultrahigh-vacuum environment     

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography. The temperature distribution in operating AlGaN/GaN devices on SiC, sapphire, and Si substrates was used to determine values for the TBR by comparing experimental results to finite-difference thermal simulations. While the measured TBR of about 3.3 x 10^-8 W^-1 ldr m² ldr K for devices on SiC and Si substrates has a sizeable effect on the self-heating in devices, the TBR of up to 1.2 x 10^-8 W^-1 ldr m² ldr K plays an insignificant role in devices on sapphire substrates due to the low thermal conductivity of the substrate. The determined effective TBR was found to increase with temperature at the GaN/SiC interface from 3.3 x 10^-8 W^-1 ldr m² ldr K at 150degC to 6.5 x 3.3 x 10^-8 W^-1 ldr m² ldr K at 275degC, respectively. The contribution of a low-thermal-conductivity GaN layer at the GaN/substrate interface toward the effective TBR in devices and its temperature dependence are also discussed.     

Extremely low-leakage GaAs P-i-N junctions and memory capacitorsgrown by atomic layer epitaxy

Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm² at 1-V reverse bias for a 160×140-μm² capacitor. These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4×10^-4 to 4.9×10^-5 cm², leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions