半导体量子棒的光控取向技术进展

介绍了液晶分子的光控取向技术和半导体量子棒均匀定向的方法。该方法可以将高亮度、核/壳结构的CdSe/CdS量子棒与液晶单体相互结合,通过定向排列液晶单体来实现对量子棒的定向排列,并利用紫外光聚合固化,形成包裹量子棒的液晶聚合物薄膜。通过对高偏振荧光量子棒的光学表征,展现出高排列序参数。在应用方面,液晶聚合物中的量子棒可在微米尺度(低至2μm)内进行多畴取向,展现出在光子学和保密领域中的应用前景;结合量子棒/液晶聚合物(QR/LCP)薄膜与液晶显示技术,可用于新式光学驱动荧光显示设备;用于现代液晶显示设备中的量子棒亮度增益膜,在增强色彩表现(100%NTSC)的同时,又能提高显示器的光学效率(8%)。     

静电纺丝技术制备光学功能纳米纤维

介绍了静电纺丝制备纳米纤维的基本原理、装置及运用静电纺丝技术制备的实芯、空芯、多孔和带状等几种不同结构的纳米纤维,阐述了近年来同内外研究者通过静电纺丝技术制备出的发光纳米纤维以及光学偏振纳米纤维的相关成果及研究进展,并讨论了这类光学功能纳米纤维潜在的应用.     

形貌可控的CdS微米/纳米结构的表征和发光性能(英文)

利用简单的热蒸发CdS粉末方法,可合成出高质量的CdS微米柱。通过调控Si衬底上Au膜的厚度,能够大面积合成出尺寸均一的CdS纳米带和纳米棒。系统地研究了所合成样品的相、微结构和光致发光特性。室温下样品的发光结果表明可在所合成CdS微米柱上观察到位于约512 nm对应于其带隙的强发光峰。与CdS微米柱不同的是,可在所合成的CdS纳米带和纳米棒样品上分别观测到位于约521和543 nm,528和550 nm处对应于带边附近的发射强峰。并且,所合成的CdS纳米带和纳米棒展现出位于约710和712 nm位置处的宽峰,该峰的出现与结构缺陷、离子缺陷或杂质有关。与CdS纳米带的发光性能相比,所合成的CdS纳米棒表现出增强的发光性能。     

三基色量子点的制备与白光的实现

采用化学溶液方法,以乙基黄原酸盐作为壳层前驱体,制备了红绿蓝三色发光的CdSe/ZnS核壳量子点.以乙基黄原酸锌为前驱体形成ZnS壳层包覆CdSe核量子点,通过调节反应温度与反应气氛等条件获得了发绿光(542nm)及蓝光(483nm)的核壳量子点.以乙基黄原酸镉和乙基黄原酸锌分别作为壳层CdS及ZnS的前驱体制备了发红光(612nm)CdSe/CdS/ZnS核/多壳结构量子点.紫外-可见吸收光谱、荧光光谱及透射电镜研究结果表明,通过条件调节,温度较低时(约230℃)注入乙基黄原酸锌后量子点发光峰出现红移,而温度较高时(约260℃)则发生蓝移.通过不同发光颜色的量子点的混合实现了三基色白光.     

静电纺丝制备复合纳米纤维研究进展

静电纺丝技术近年来在制备纳米纤维领域得到广泛应用,目前已成功制备出多种不同类型的纳米纤维,尤其在制备复合纳米纤维方面取得了显著成果,被认为是制备纳米纤维最有效的方法之一。总结了静电纺丝技术制备纳米纤维,特别是制备复合型纳米纤维方面的最新研究报道,如天然高分子复合纳米纤维、聚合物复合碳纳米管纤维、聚合物复合金属纳米纤维、共聚物纳米纤维以及无机复合纳米纤维等。静电纺丝纳米纤维将在生物医药、电子光学、制备复合材料等多个领域得到广泛应用。     

PZT/P(VDF-TrFE)复合材料的静电纺丝制备及其特性

自行搭建了静电纺丝平台,制备了锆钛酸铅陶瓷粉末与聚(偏氟乙烯-三氟乙烯)复合材料纳米纤维膜。使用扫描电子显微镜观测了纳米纤维膜的表面形貌特征,使用X线衍射检测了纳米纤维膜中聚偏氟乙烯三氟乙烯的β相。探究了锆钛酸铅陶瓷质量分数对纳米纤维直径的影响和对其内聚偏氟乙烯三氟乙烯的β相影响。实验结果表明,使用静电纺丝法制备锆钛酸铅陶瓷粉末与聚偏氟乙烯三氟乙烯复合材料膜时,考虑到纳米纤维的形貌质量与纺丝过程的难易度,合适的锆钛酸铅陶瓷粉末质量分数应为4%。     

静电纺丝法制备钇铁石榴石单晶纳米纤维

介绍了用静电纺丝法制备钇铁石榴石(YIG)磁光单晶纳米纤维材料的研究工作,其主要制备方法是将合成YIG所需金属元素的醇盐溶解于有机溶剂,通过静电纺丝法制备出了复合超细纤维,然后进行热处理,得到晶态磁光纳米纤维.对制备的复合纤维和热处理后的磁光纤维作了扫描电镜(SEM)分析,对热处理后的纤维作为了透射电镜(TEM)和X射线衍射(XRD)测试.通过对测试结果的分析发现,在纺丝过程中微量注射泵的推进速度和空气相对湿度是主要影响因素,推进速度和相对湿度减小,都有利于成丝.复合纤维的直径在500 nm～1 000 nm之间.经过750℃热处理后,样品仍然能保持纤维状结构,纤维直径在100 nm左右,并能够合成出单晶钇铁石榴石相.     

ZnS∶Mn/PVA复合纳米纤维的制备及性能分析

采用绿色化学方法、通过使用对环境友好无危害的橄榄油,结合静电纺丝技术,成功制备了ZnS∶Mn/PVA复合纳米纤维。通过扫描电镜和X射线衍射对复合纳米纤维结构进行表征,通过光致发光研究了复合纳米纤维的光学性质。扫描电镜结果表明ZnS∶Mn/PVA复合纳米纤维的直径约为300 nm,X射线衍射仪结果显示ZnS∶Mn/PVA复合纳米纤维具有ZnS立方闪锌矿结构。光致发光光谱表明ZnS∶Mn/PVA复合纳米纤维在590 nm处具有较强的尖锐发射峰,实现了Mn2+的特征发射。ZnS∶Mn/PVA复合纳米材料是一种非常好的发光材料,有望在光电领域得到应用。     

静电纺丝技术制备三维纳米结构研究进展

静电纺丝技术可制备形貌可控并且连续的纳米纤维,在三维纳米结构制备领域得到了广泛应用。综述了国内外三维静电纺丝技术的研究现状,介绍了三维静电纺丝技术的基本原理。概述了目前制备三维纳米结构常用的四种静电纺丝技术涉及的方法,即自组装法、固体模板辅助收集法、液体辅助收集法和气体辅助收集法。对制备原理、实验装置、制备方法、所获得的纳米纤维的主要工艺参数及适用范围进行了比较和总结,并且详细分析了影响其纺丝质量的因素,为三维静电纺丝技术进一步发展提供了参考。     

纤维结构对静电纺丝辐射制冷材料可见光-红外光学性能的影响

采用静电纺丝法制备一种具有日间辐射制冷功能的PEO纤维膜。系统地探究了PEO浓度、直流电压、针头尺寸等工艺参数对PEO纤维直径和孔隙结构的影响,并对其可见光、红外光学性能进行了表征。结果表明：通过对PEO浓度、直流电压、针头尺寸等静电纺丝工艺参数进行系统优化,可将PEO纳米纤维的内部结构尺寸控制在390～920 nm范围内。PEO纳米纤维的可见光-近红外反射率对其结构参数变化较为敏感,在相同纤维膜厚度的情况下,纤维的平均直径可由920 nm减小到390 nm,孔隙率随之增大,可见光-近红外反射率可提高近5%。而纤维结构对热红外发射率的影响不明显,其主要影响因素为纤维厚度,将纤维厚度从12μm增加到25μm,大气窗口波段(8～13μm)的发射率增加了40%。基于纤维结构对不同波长辐射的选择性传输特性,研制了一种具有双层结构的柔性静电纺丝纤维材料,实现了对太阳光高反射、对热红外光高发射的特殊光学效应,达到了较好的辐射制冷效果。     

Ligand Shell Engineering to Achieve Optimal Photoalignment of Semiconductor Quantum Rods for Liquid Crystal Displays

The photoalignment process to align semiconductor quantum rods (QRs) in the liquid crystal monomer (LCM) matrix is a flexible technology; however, the optical quality of the resulting enhancement films drops at high concentrations of the QRs. The compatibility between the ligand shell on the QRs and the LCM plays an important role in avoiding this issue. Herein, several kinds of ligand shells on the rod‐in‐rod CdSe/CdS QRs are designed, without affecting the optical properties of QRs, and their compatibility with LCM molecules is studied. Promesogenic dendritic ligands in combination with relatively short alkylphosphonic acids are found to provide the highest optical quality, without QR aggregation, and so the high brightness of the resulting enhancement films, even at higher concentrations of QRs in LCM, which is perfectly suitable for the application in liquid crystal displays.     

Continuously Tunable Emission in Inverted Type‐I CdS/CdSe Core/Crown Semiconductor Nanoplatelets

The synthesis and unique tunable optical properties of core/crown nanoplatelets having an inverted Type‐I heterostructure are presented. Here, colloidal 2D CdS/CdSe heteronanoplatelets are grown with thickness of four monolayers using seed‐mediated method. In this work, it is shown that the emission peak of the resulting CdS/CdSe heteronanoplatelets can be continuously spectrally tuned between the peak emission wavelengths of the core only CdS nanoplatelets (421 nm) and CdSe nanoplatelets (515 nm) having the same vertical thickness. In these inverted Type‐I nanoplatelets, the unique continuous tunable emission is enabled by adjusting the lateral width of the CdSe crown, having a narrower bandgap, around the core CdS nanoplatelet, having a wider bandgap, as a result of the controlled lateral quantum confinement in the crown region additional to the pure vertical confinement. As a proof‐of‐concept demonstration, a white light generation is shown by using color conversion with these CdS/CdSe heteronanoplatelets having finely tuned thin crowns, resulting in a color rendering index of 80. The robust control of the electronic structure in such inverted Type‐I heteronanoplatelets achieved by tailoring the lateral extent of the crown coating around the core template presents a new enabling pathway for bandgap engineering in solution‐processed quantum wells.     

Chloride and Indium‐Chloride‐Complex Inorganic Ligands for Efficient Stabilization of Nanocrystals in Solution and Doping of Nanocrystal Solids

Here, the surface functionalization of CdSe and CdSe/CdS core/shell nanocrystals (NCs) with compact chloride and indium‐chloride‐complex ligands is reported. The ligands provide not only short interparticle distances but additionally control doping and passivation of surface trap states, leading to enhanced electronic coupling in NC‐based arrays. The solids based on these NCs show an excellent electronic transport behavior after heat treatment at the relatively low temperature of 190 °C. Indeed, the indium‐chlorido‐capped 4.5 nm CdSe NC based thin‐film field‐effect transistor reaches a saturation mobility of μ = 4.1 cm² (V s)^?1 accompanied by a low hysteresis, while retaining the typical features of strongly quantum confined semiconductor NCs. The capping with chloride ions preserves the high photoluminescence quantum yield ( ≈ 66%) of CdSe/CdS core/shell NCs even when the CdS shell is relatively thin (six monolayers). The simplicity of the chemical incorporation of chlorine and indium species via solution ligand exchange, the efficient electronic passivation of the NC surface, as well as their high stability as dispersions make these materials especially attractive for wide‐area solution‐processable fabrication of NC‐based devices.     

Highly Efficient Quantum‐Dot‐Sensitized Solar Cell Based on Co‐Sensitization of CdS/CdSe

Cadmium sulfide (CdS) and cadmium selenide (CdSe) quantum dots (QDs) are sequentially assembled onto a nanocrystalline TiO₂ film to prepare a CdS/CdSe co‐sensitized photoelectrode for QD‐sensitized solar cell application. The results show that CdS and CdSe QDs have a complementary effect in the light harvest and the performance of a QDs co‐sensitized solar cell is strongly dependent on the order of CdS and CdSe respected to the TiO₂. In the cascade structure of TiO₂/CdS/CdSe electrode, the re‐organization of energy levels between CdS and CdSe forms a stepwise structure of band‐edge levels which is advantageous to the electron injection and hole‐recovery of CdS and CdSe QDs. An energy conversion efficiency of 4.22% is achieved using a TiO₂/CdS/CdSe/ZnS electrode, under the illumination of one sun (AM1.5,100 mW cm^?2). This efficiency is relatively higher than other QD‐sensitized solar cells previously reported in the literature.     

Green synthesis of yellow emitting PMMA–CdSe/ZnS quantum dots nanophosphors

We herein report the fabrication of highly fluorescent yellow emitting nanophosphors using CdSe/ZnS quantum dots (QDs) dispersed in polymethyl methacrylate (PMMA). The QDs were synthesised via a simple, non-phosphine and one pot synthetic method in the absence of an inert atmosphere. The as-prepared nanocrystallites were characterised by Fourier transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–vis) and photoluminescence spectroscopy, energy-dispersive spectroscopy (EDS), Raman spectroscopy, transmission electron microscopy (TEM) and high resolution TEM (HRTEM) microscopy. Optical analysis confirmed that the as-synthesised CdSe/ZnS QDs were of high quality with sharp absorption peaks, bright luminescence, narrow emission width and high PL quantum yield (up to 74%). The electron microscope images showed that the QDs are small and spherical in shape with narrow size distributions while the HRTEM micrograph confirmed the high crystallinity of the material. The Raman analysis of the QDs revealed the formation of core–shell structure and the energy dispersive spectroscopy confirmed the presence of the corresponding elements (i.e., Cd, Se, Zn and S). The dispersion of the core–shell QDs in PMMA matrix led to the red-shifting of the emission position from 393 nm in the neat PMMA to 592 nm in the nanocomposite. The fabricated highly fluorescent yellow emitting PMMA–CdSe/ZnS core–shell QDs polymer nanocomposite film display excellent optical properties without loss of luminescence. Furthermore, the as-synthesised organic soluble CdSe/ZnS QDs were successfully converted into highly water soluble QDs after ligand exchange with mercaptoundecanoic acid (MUA) without the loss of their emission properties. The simplicity of the method and the quality of the as-synthesised nanocomposite make it a promising material for the large scale fabrication of diverse optical devices.     

Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots

The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determine the mechanism of electronic-excitation transfer from the organic matrix to the semiconductor QDs. Ways of optimizing the design of the LEDs in order to improve their efficiency are suggested on this basis.     

Photo- and electroluminescence from semiconductor colloidal quantum dots in organic matrices: QD-OLED

The results are reported of an experimental study of samples of organic light-emitting diodes (OLEDs) with luminescent layers fabricated on the basis of two types of CdSe/CdS/ZnS semiconductor quantum dots (QDs) with average CdSe core diameters of 3.2 and 4.1 nm and the same overall diameters of 6.5 nm. The dependences of the LED efficiency on the applied voltage are determined. Assumptions are made about ways of optimizing the design of high-efficiency LEDs.     

Organic light-emitting devices with multi-shell quantum dots connected with polythiophene derivatives

The results of an experimental study of organic light-emitting diodes with poly-2,5-(3,4-diamino thieno[2,3-b]thiophene)-4,4’-amidoarylene transport layers and CdSe/CdS/ZnS quantum dots, the CdSe core of which has an average diameter of 4.1 nm, are presented. A suggestion is made regarding the possible conjugation of quantum dots and polythiophenes, which would substantially improve the characteristics of the light-emitting diodes in the case of optimization of their structure.     

Synthesis and characterization of novel oxygenated CdSe window layer for CdTe thin film solar cells

Significant increases in the solar conversion performance of thin film CdS/CdTe solar cells have been realized in recent years by the inclusion of wider gap materials, notably CdS:O, in place of the CdS window layer. Similarly, use of CdSe in combination with CdTe has given yet further increases in current density due to the formation of CdTe_1-xSe_x and the resulting enhanced long wavelength collection. Here we report the synthesis and properties of oxygenated CdSe films and their influence on device performance when included into CdTe solar cells. The CdSe:O films were made by pulsed laser deposition in oxygen at pressures of 0.01 and 0.03 Pa. Optical transmission measurements indicated that oxygenation acts to increase transparency in the 400–750 nm range, and that increased oxygen content acts to increase the apparent absorption threshold slightly. The higher transmission acts to increase the spectral response of CdTe solar cells in the range 350–500 nm compared to CdSe- and CdS-containing control devices. Moreover, the already known advantage of enhanced long wavelength response (850–910 nm) over that of CdS/CdTe is retained for both CdSe and CdSe:O window layers. Hence the use of CdSe:O as a window layer is demonstrated to increase the current harvesting of these solar cells by increasing both their long and short wavelength performances. These gains in the short circuit current outweigh small losses in fill factor and open circuit voltage making CdSe:O a valuable possible means to increase the performance of CdTe solar cells.     

Synthesis and Assembly of Core–Shell Nanorods with High Quantum Yield and Linear Polarization

The seeded growth method offers an efficient way to design core–shell semiconductor nanocrystals in the liquid phase. The combination of seed and shell materials offers wide tunability of morphologies and photophysical properties. Also, semiconductor nanorods (NRs) exhibit unique polarized luminescence which can potentially break the theoretical limit of external quantum efficiency in light emitting diodes based on spherical quantum dots. Although rod-in-rod core–shell NRs present higher degree of polarization, most studies have focused on dot-in-rod core–shell NRs due to the difficulties in achieving uniform NR seeds. Here, this study prepares high-quality uniform CdSe NRs by improving the reactivity of the Se source, using a secondary phosphine, namely diphenylphosphine, to dissolve the Se power, along with the conventional tertiary phosphine, namely trioctylphosphine. Starting from these high-quality NR seeds, this study synthesizes CdSe/Cd_xZn_1−xS/ZnS core–shell NRs with narrow emission bandwidth (29 nm at 620 nm), high PLQY (89%) and high linear polarization (p = 0.90). This study then assembles these core–shell NRs using the confined assembly method and fabricates long-range-ordered microarrays with programmable patterns and displaying highly polarized emission (p = 0.80). This study highlights the great potential of NRs for application in liquid crystal displays and full-color light emitting diodes displays.