掺杂改善CuInSe2薄膜光伏特性的研究进展

CuInSe2薄膜太阳能电池是当前可再生能源领域的研究热点之一.掺杂在一定程度上起到提高薄膜电池光电性能及降低薄膜电池成本的作用.从元素掺杂角度出发,对元素掺杂的种类、方式,掺杂元素在薄膜电池光电性能和相互作用机制上的影响进行了重点综述,最后提出了当前CuInSe2薄膜电池存在的主要问题和发展方向.     

掺杂ZnO薄膜发光特性的研究进展

ZnO薄膜是一种Ⅱ～Ⅵ族的宽禁带半导体材料,在发光二极管和激光二极管方面极有希望取代GaN材料,成为一种全新的候选材料。通过对薄膜的掺杂,可以获得有望取代现有的氧化铟锡材料的高电导率的透明导电膜,在平板显示器、太阳能电池等光电器件中具有巨大的应用前景。     

N、S共掺杂碳基高效氧还原催化剂的制备

杂原子掺杂碳基氧还原（ORR）催化剂具有代替Pt基催化剂的巨大潜力。以硫掺杂g-C₃N₄（S-doped g-C₃N₄, S-g-C₃N₄）作为硫源和氮源,以三嵌段共聚物P123作为碳源,通过简单的高温热解法成功制备了N、S共掺杂碳（N, S co-doped carbon, NSC）催化剂,并考察了热解温度对制备的NSC催化剂ORR性能的影响。材料表征结果显示:温度为1 000 ℃时制备的催化剂NSC-1000具有较高的氮含量和硫含量及最大的比表面积;电化学测试结果显示:NSC-1000具有最佳的ORR性能,在0.1 mol/L KOH溶液中半波电位（half-wave potential, E1/2）高达0.888 V,且经10 000圈循环伏安扫描后E1/2仅负移12 mV,表现出极佳的活性和稳定性。此外,旋转环盘电极测试结果显示:NSC-1000催化剂主要以四电子反应路径催化ORR的发生。本实验为制备N、S共掺杂碳基高效ORR催化剂提供了新的思路。     

Fe掺杂g⁃C3N4光催化活化过硫酸钠降解偶氮染料

以硝酸铁为铁源,通过浸渍法制备Fe?C₃N₄复合材料。采用FT?IR对Fe?C₃N₄材料进行了表征分析。结果表明,Fe掺杂不改变g?C₃N₄的骨架结构,可以增加g?C₃N₄材料的光催化性能。以橙黄II为目标污染物,在可见光下Fe?C₃N₄催化活化过硫酸钠降解偶氮染料,考察了过硫酸钠物质的量、Fe?C₃N₄质量浓度、橙黄II质量浓度及pH对降解效果的影响,并对反应进行了动力学研究,分析了所制备的催化材料的稳定性。结果表明,在Fe?C₃N₄质量浓度为2.0 g/L、过硫酸钠与污染物物质的量比为1 200∶1和pH=3的条件下,降解效果最好,降解率为77.8%;Fe?C₃N₄/过硫酸钠体系对偶氮染料的降解满足准二级动力学方程;Fe?C₃N₄材料具有可重复利用性。     

溴掺杂CH_3NH_3PbI_3薄膜及其钙钛矿太阳能电池性能研究

有机-无机铅基卤化物钙钛矿杂合物CH_3NH_3PbI_3作为光吸收材料被广泛应用于太阳能电池中,取得了较高的光电转换效率。基于此,在CH_3NH_3PbI_3基础上对I位进行Br掺杂,采用一步溶液法制备了一系列CH_3NH_3Pb(I_(1-x)Br_x)_3薄膜,研究了溴掺杂对CH_3NH_3PbI_3薄膜物相结构、微观形貌、吸光性能及光电转换性能的影响。结果表明,随着Br掺杂量x由0增加到1,常温下其物相结构逐渐由四方相转变为立方相,并且薄膜在TiO_2纳米柱衬底上的覆盖率逐渐提高,其在可见光及近红外区域内的吸光范围逐渐变窄,其光学带隙由1.59 eV逐渐过渡到2.23 eV。以CH_3NH_3Pb(I_(1-x)Br_x)_3薄膜制备成FTO/BL(blocking layer)-TiO_2/NR(nanorods)-TiO_2/CH_3NH_3Pb(I_(1-x)Br_x)_3/sprio-OMe TAD/Au结构的钙钛矿太阳能电池,发现随着Br掺杂量的增加,太阳能电池的短路电流减小,开路电压增大,填充因子增大,光电转换效率减小。     

氮气分压对Cu3N薄膜性质的影响

采用反应射频磁控溅射法,通过改变混合气体（N2＋Ar）中氮气分压来改变元素的沉积能量和密度,在玻璃基底上制备出了表面光滑、致密的氮化铜（Cu3N）薄膜,研究了不同氮气分压对Cu3N薄膜的择优生长取向和晶粒尺寸的影响．结果表明：随着氮气分压的增加,Cu3N薄膜由沿（111）晶面择优生长转变为沿（100）晶面择优生长,晶粒尺寸变小,表面均方根粗糙度和光学带隙Eopt增大;薄膜在300℃的条件下会完全分解成铜和氮气;薄膜表面的Cu元素以＋1价形式存在,Cu2p3／2,Cu2p1／2和N1s峰分别位于932．7,952．7和397．3eV．     

磷和硼共掺杂石墨相氮化碳的制备及其光催化性能研究

以磷酸钠为磷源,以氧化硼为硼源,采用元素掺杂法对石墨相氮化碳进行非金属元素共掺杂,以此来提高其对有机污染物的降解效率。分析测试结果表明：2种元素的共同掺杂使石墨相氮化碳在可见光范围内的响应能力增强,从而提高了样品对可见光的利用效率。此外,共掺杂还能够减小样品的能带宽度,抑制光生电子和空穴的复合效应,进而提高样品的光催化活性。两元素共掺杂的样品对罗丹明B具有良好的降解稳定性和循环使用性,其光催化降解速率是纯石墨相氮化碳的59.2倍。     

掺杂ZnO薄膜的微结构及电学特性

用(ZnO)1－x(Al2O3)xx=w(Al2O3)=0、0.01、0.02、0.05）陶瓷靶材为原料，通过电子束反应蒸发生长了非故意掺杂及Al掺杂的ZnO（Al掺杂ZnO）薄膜.采用X射线衍射、Raman散射及霍尔效应技术研究了薄膜的晶体微结构及电学特性.结果表明，由（ZnO)1-x(Al2O3)x(x ≤ 0.02)的靶材生长得到的Al掺杂ZnO薄膜仍具有高度c-轴取向的纤锌矿晶体结构，但随着薄膜中Al掺入量的增加，其c-轴取向性有所退化；Raman光谱测量表明，Al掺杂ZnO薄膜的本征内应力随着Al掺入量的增加而增大，（ZnO)0.98(Al2O3)0.02薄膜中Al和Zn的原子个数比为6∶94，此时薄膜的内应力已接近饱和；Al掺杂ZnO薄膜的电阻率随着Al掺入量的增加呈现先减小后增大的特征，(ZnO)0.98(Al2O3)0.02薄膜具有最小的电阻率（7.85×10－4 Ω·cm），这归因于该类薄膜同时具有高电子浓度（1.32×1021 cm-3）和较高的电子迁移率（6.02 cm2/(V·s)）.     

梯度掺杂AZO薄膜的制备及其性能表征

采用Sol-Gel法,以不同铝离子浓度的溶胶梯度掺杂的方法制备了Al掺杂ZnO（AZO）薄膜,用XRD衍射仪和SEM扫描电镜对该薄膜进行了结构和形貌分析,并对其电学性能和光学性能进行了研究。结果表明,梯度掺杂的AZO薄膜比单一浓度掺杂5.0 at%（原子数百分比）的薄膜具有更明显的c轴择优取向,更强的本征紫外发光峰和近紫外发光峰。当薄膜的退火温度在500~650℃区间时,薄膜电阻率稳定在10-2Ω.cm,高于700℃时,薄膜电阻率明显升高。     

热喷涂法制备Sb掺杂的SnO_2薄膜

以SnCl4·5H2O和SbCl3为原料,采用喷雾热分解法在管状石英玻璃基材上制备出Sb掺杂的SnO透明导电薄膜,并采用X射线衍射仪(XRD)和原子力显微镜(AFM)对薄膜的结构和表面形貌进行了分析,研究了Sb掺杂量和喷涂温度对薄膜方阻及结构的影响.结果表明:当Sb掺杂量为6 mol%、成膜温度为500℃时,薄膜的方阻达到最低(65Ω/□),结构最致密.     

磁控溅射Ti掺杂NbN薄膜的机械和摩擦学特性研究

为研究Ti掺杂的NbN薄膜的机械和摩擦学特性,采用射频和直流磁控共溅射技术制备了Ti掺杂的NbN(Ti:NbN)薄膜.利用X射线衍射仪(XRD)、能量色散X射线光谱仪(EDX)、扫描电子显微镜(SEM)、纳米压痕仪、高温摩擦磨损实验机分别对Ti掺杂的NbN薄膜的微观结构、组成成分、表面形貌、机械和摩擦学性能进行了研究.XRD测试结果显示,薄膜的结晶性随着Ti靶掺杂功率的增加(从0 W逐渐升高到40 W)而呈明显增强趋势,晶粒尺寸也由18.010 nm增加到21.227 nm.当Ti靶的掺杂功率为30 W时,NbN薄膜的硬度由4.5 GPa(未掺杂)增加到20.4 GPa,弹性模量由145.8 GPa(未掺杂)增加到224.5 GPa; 当Ti靶的掺杂功率为40 W时,NbN薄膜的摩擦系数由0.73(未掺杂)下降到0.51,磨损率由3.3×10^-6 mm³/(N·mm)(未掺杂)下降到2.1×10^-6 mm³/(N·mm).这表明,掺杂Ti可使NbN薄膜的机械性能和摩擦学性能得到很大的改善.     

Influence of deposition pressure on properties of ZnO: Al films fabricated by RF magnetron sputtering

Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10~(-4) Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.     

生长温度对掺钛氧化锌薄膜光学性质的影响

以氧化锌钛陶瓷靶作为溅射源,采用磁控溅射技术在玻璃衬底上制备了掺钛氧化锌(TZO)透明导电薄膜,通过X射线衍射仪和分光光度计测试表征以及全光谱拟合法分析,研究了生长温度对TZO薄膜晶体结构和光学性质的影响.结果表明:所有TZO样品均为六角纤锌矿结构,并具有(002)择优取向,生长温度对薄膜晶粒尺寸和光学透射率的影响较明显,而对折射率、消光系数和光学能隙的影响较小.当生长温度为200℃时,TZO薄膜的晶粒尺寸最大,可见光范围平均透射率(含衬底)为76.1%,对应的直接光学能隙为3.45 eV.     

Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

ZnO thin films were prepared by direct current（DC） reactive magnetron sputtering under different oxygen partial pressures And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy（Vo）, zinc vacancy（VZn）, antisite oxygen（OZn）, antisite zinc（Zno）, interstitial oxygen（Oi） and interstitial zinc（Zni） were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.     

Nano-sized Thin Films Fabricated by Ion Beam Sputtering and Its Properties

Nanoscale thick amorphous Ni-Cr alloy thin films were fabricated by low-energy ion beam sputtering technology; then the as-deposited samples experienced rapid thermal process to realize the transformation from amorphous to crystalline state. The film thickness was measured with a-stylus surface profiler, the structure and the compositions of the films were confirmed by low angle X-ray diffraction and scanning auger electron microprobe respectively, and the surface topography was characterized by scanning electron microscope and scanning probe microscope. Electrical property of the films was measured by fourpoint probe. The experimental results illustrate that the combined processes of ion beam sputtering and rajid thermal process are effective for fabrication nanoscale Ni-Cr alloy thin film with good properties.     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

射频磁控溅射制备的ZnMgO薄膜结构和光学性能

采用射频磁控溅射法,在石英衬底上制备了Zn1-xMgxO(x=0.00～0.16)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计和光致发光(PL)光谱等分析了薄膜的结构、形貌和光学特性。结果表明:当x≤0.10时薄膜保持六角纤锌矿结构,而x=0.16时已出现MgO立方相;所有薄膜晶粒大小均匀,在100～150 nm之间;透光率在80%以上;薄膜带隙Eg与Mg含量呈线性关系;薄膜PL谱由较弱的紫外发光峰和较强的可见发光带组成,随Mg含量的增加紫外发光峰蓝移。     

Surface and electrical properties of NiCr thin films prepared by DC magnetron sputtering

Several batches of NiCr alloy thin films with different thickness were prepared in a multi-targets magnetron sputtering apparatus by changing sputtering time while keeping sputtering target power of Ni and Cr fixed. Then the as-deposited films were characterized by energy-dispersive X-Ray spectrometer （EDX）, Atomic Force Microscope （AFM） and four-point probe （FPP） to measure surface grain size, roughness and sheet resistance. The film thickness was measured by Alpha-Step IQ Profilers. The thickness dependence of surface roughness, lateral grain size and resistivity was also studied. The experimental results show that the grain size increases with film thickness and the surface roughness reaches the order of nanometer at all film thickness. The as-deposited film resistivity decreases with film thickness.     

Composition design and properties of CoNbZr amorphous films deposited by unbalanced magnetron sputtering

Co₈₇Nb₁₀Zr₃, Co₇₆Nb₁₉Zr₅, Co₆₄Nb₂₆Zr₁₀ and Co₆₄Nb₁₆Zr₂₀ amorphous films were deposited on noncrystalline glass substrates by DC unbalanced magnetron sputtering. The compositions of amorphous films were tailored in the light of the individual deposition rate of Co, Nb and Zr. The amorphous films with the anticipated composition were prepared by means of co-sputtering Co, Nb and Zr targets simultaneously. It is indicated that there is interaction among three targets during co-sputtering. The morphology and composition of the films were observed by SEM, AFM and EDS. The structure and magnetic property were measured by XRD and physical property measurement system (PPMS). The coercivity changes with the composition, varying from 240 to 1 600 A/m. After vacuum isothermal annealing at temperatures of 475, 500, 525 and 550 °C for 15 and 30 min, respectively, it is found that high Nb content is beneficial to improving thermal stability of amorphous films. The crystallized films have the mean grain size of 2–19 nm.     

反应磁控溅射法制备Zn_3N_2薄膜的工艺研究

制备和研究高质量的Zn3N2薄膜有助于拓展新型薄膜材料体系。文章采用反应磁控溅射技术,研究不同的溅射功率、N2-Ar流量比、衬底类型和衬底温度等沉膜工艺对Zn3N2薄膜结晶质量的影响;采用XRD、SEM和AFM等测试手段,分析Zn3N2薄膜的微结构和表面形貌。结果表明:几种衬底上,以石英玻璃作衬底沉积的Zn3N2薄膜晶粒尺寸较大,衍射峰较强,且为多晶向薄膜;当N2-Ar流量比提高时,Zn3N2薄膜为单一择优取向的结晶薄膜;衬底温度升高后,Zn3N2薄膜晶粒尺寸减小,但是单一择优取向不变;溅射功率提高后,薄膜晶粒尺寸增大,择优取向改变,由单一晶向变为多晶向,以100晶向单晶硅作衬底可获得单一晶向Zn3N2薄膜,而以111单晶硅作衬底制备的Zn3N2薄膜经XRD测试,未检测到Zn3N2晶体。