Effect of MeV beams on the interface structure of metal(adlayer)-silicon (crystal substrate) systems

The influence of MeV ion beams on the measured intensity of the surface peak (SP) in channeling studies has been examined for Ag and/or Au covered Si(111), and Pd covered Si(111) systems with film thicknesses up to several monolayers. A simple phenomenological model is introduced to analyse the observed increase in atomic displacements induced by probing He ions of 1 MeV. For the Ag and Pd cases, effects attributable to the deposited metal was small while for Au an appreciable enhancement of the beam sensitivity was observed which increases with increasing Au thickness for beam doses of ? 3.1 × 10¹⁶ ions/cm². The observe differences cannot be explained by the difference in mass and atomic number of the overlayer atoms. The model suggests that the chemical nature of atomic bonds near the interface affects the damage threshold energy.     

Ion beam shaping of Au nanoparticles prepared by micellar technique

Irradiation-induced burrowing and ion-induced shaping effects of Au nanoparticles are investigated. Hexagonally arranged Au nanoparticles prepared by micellar technique with diameter ～10 nm and inter-particle distance of about 80 nm were sequentially irradiated with 200 keV Ar⁺ ions to fluences of 5×10¹⁵ ions/cm². Irradiation with Argon ions causes sinking of the Au nanoparticles into the subjacent SiO₂ layer due to capillary driving forces related to specific wetting conditions while the spherical shape is conserved. Subsequent irradiation with 54 MeV Ag⁸⁺ swift heavy ions of these spherical Au nanoparticles confined within a silica matrix shapes them into prolate nanorods and nanowires whose principal axes are aligned along the beam direction. Above a threshold fluence two deformation regimes have been observed. For relatively low fluences Au nanoparticles elongate into nanorods depending on their volume. For high fluences, the formation of nanowires is observed provided that the inter-particle distance is short enough to allow for an efficient mass transport through the silica matrix.     

Effects of BF2+ implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

Metastable pseudomorphic Ge_0.06Si_0.94 alloy layers grown by molecular beam epitaxy (MBE) on Si (1 0 0) substrates were implanted at room temperature by 70 keV BF₂⁺ ions with three different doses of 3 × 10¹³, 1 × 10¹⁴, and 2.5 × 10¹⁴ cm⁻². The implanted samples were subsequently annealed at 800°C and 900°C for 30 min in a vacuum tube furnace. Observed by MeV ⁴He channeling spectrometry, the sample implanted at a dose of 2.5 × 10¹⁴ BF₂⁺ cm⁻² is amorphized from surface to a depth of about 90 nm among all as-implanted samples. Crystalline degradation and strain-relaxation of post-annealed Ge_0.06Si_0.94 samples become pronounced as the dose increases. Only the samples implanted at 3 × 10¹³ cm⁻² do not visibly degrade nor relax during anneal at 800°C . In the leakage current measurements, no serious leakage is found in most of the samples except for one which is annealed at 800°C for 30 min after implantation to a dose of 2.5 × 10¹⁴ cm⁻². It is concluded that such a low dose of 3 × 10¹³ BF₂⁺ cm⁻² can be doped by implantation to conserve intrinsic strain of the pseudomorphic GeSi, while for high dose regime to meet the strain-relaxation, annealing at high temperatures over 900°C is necessary to prevent serious leakages from occuring near relaxed GeSi/Si interfaces.     

Ion beam induced damage in CaF2

The change in lattice parameter and the induced damage are studied in single crystal CaF₂ bombarded by a 15 MeV Cl ion beam. The lattice parameter change (strain) and the damage for increasing ion beam dose (5 × 10¹²/cm² to 7 × 10¹⁵/cm²) is observed via X-ray rocking curve analysis using a double-crystal diffractometer and X-ray reflection topography. The ion beam energy (range = ～ 4.5 μm in CaF₂) is such that both the electronic region and the nuclear cascade region of energy loss show up in the diffraction signal. By kinematical X-ray diffraction theory analysis, the progress of strain/damage depth profile with increasing beam dose is shown explicitly. The increase in strain is nonlinear with beam dose for the dose range studied. For increasing beam dose, the strain level in the electronic energy loss region is fixed, while that in the nuclear collision loss region increases effectively until that region becomes completely amorphous.     

Effect of CH<Subscript>4</Subscript> Ion Implantation in Pure Aluminium

In this paper, aluminium samples with 99.96% purity were exposed to ion beam, extracted from CH₄ plasma. Implantation of ions were performed for 50 keV energy and various doses ranging from 1 × 10¹⁷ to 6 × 10¹⁷ ions/cm². Morphology of surfaces, roughness and its evolution during variation of ion dose has been studied by atomic force microscopy (AFM). Microstructure of the modified surfaces after ion implantation has been obtained by X-ray diffraction technique and Raman spectroscopy. Formation of aluminium carbide (Al₄C₃) was confirmed by XRD results at implantation doses of 3 × 10¹⁷ and 6 × 10¹⁷ ions/cm². In addition, it was observed that when the ion dose is increased, orientation of aluminium planes change from (2 2 0) to (2 0 0). Corrosion test was performed and compared for implanted and un-implanted samples. The results showed that corrosion resistivity increase by accumulation of ion dose.     

Anisotropic deformation of polystyrene particles by MeV Au ion irradiation

MeV Au irradiation leads to a shape change of polystyrene (PS) and SiO₂ particles from spherical to ellipsoidal, with an aspect ratio that can be precisely controlled by the ion fluence. Sub-micrometer PS and SiO₂ particles were deposited on copper substrates and irradiated with Au ions at 230 K, using an ion energy and fluence ranging from 2 to 10 MeV and 1 × 10¹⁴ ions/cm² to 1 × 10¹⁵ ions/cm². The mechanisms of anisotropic deformation of PS and SiO₂ particles are different because of their distinct physical and chemical properties. At the start of irradiation, the volume of PS particles decrease, then the aspect ratio increases with fluence, whereas for SiO₂ particles the volume remains constant.     

Light particle irradiation effects in Si nanocrystals

Si nanocrystals, formed by Si ion implantation into SiO₂ layers and subsequent annealing at 1150°C, were irradiated at room temperature either with He⁺ions at energies of 30 or 130 keV, or with 400 keV electrons. Transmission electron microscopy (TEM) and photoluminescence (PL) studies were performed. TEM experiments revealed that the Si nanocrystals were ultimately amorphized (for example at ion doses ∼10¹⁶ He cm⁻²) and could not be recrystallized by annealing up to 775°C. This contrasts with previous results on bulk Si, in which electron- and very light ion-irradiation never led to amorphization. Visible photoluminescence, usually ascribed to quantum-size effects in the Si nanocrystals, was found to decrease and vanish after He⁺ ion doses as low as 3 × 10¹²–3 × 10¹³ He cm⁻² (which produce about 1 displacement per nanocrystal). This PL decrease is due to defect-induced non-radiative recombination centers, possibly situated at the Si nanocrystal/SiO₂ interface, and the pre-irradiation PL is restored by a 600°C anneal.     

SHI induced re-crystallization of Ge implanted SiO2 films

Ge nanocrystals embedded in SiO₂ matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO₂ films. In the present study, 400 keV Ge⁺ ions were implanted into SiO₂ films at dose of 3 × 10¹⁶ ions/cm² at room temperature. The as-implanted samples were irradiated with 150 MeV Ag¹²⁺ ions with various fluences. Similarly 400 keV Ge⁺ ions implanted into Silicon substrate at higher fluence at 573 K have been irradiated with 100 MeV Au⁸⁺ ions at room temperature (RT). These samples were subsequently characterized by XRD and Raman to understand the re-crystallization behavior. The XRD results confirm the presence of Ge crystallites in the irradiated samples. Rutherford backscattering spectrometry (RBS) was used to quantify the concentration of Ge in the SiO₂ matrix. Variation in the nanocrystal size as a function of ion fluence is presented. The basic mechanism of ion beam induced re-crystallization has been discussed.     

Experimental study of pulse neutron irradiation damage in SiGe HBT

The response to transient irradiation of npn SiGe HBT (BG35 SiGe BiCMOS), i.e. device under test (DUT) was studied with online measurement of 1 MeV equivalent pulse neutron fluence of 0.8 × 10¹³n/cm². The differently biased DUT1 and DUT2 in test circuit were irradiated in the first day with neutron fluence (0.8 × 10¹³n/cm²) termed as Fluence1 and with an additional neutron fluence (0.8 × 10¹³n/cm²) in the second day to make Fluence2 equals to 1.6 × 10¹³n/cm². The experimental results show that pulsed neutron irradiation causes voltage surges in the DUTs exhibited by a negative and positive peak known to be radiation damage (RD). The RD in DUTs induced by pulse neutron Fluence1 initially created unstable displacement defects and the defects later reordered (cluster defects) to form more stable configurations via neutron Fluence2. The irradiated DUTs experienced online instantaneous annealing after 2.03 × 10^?9 s and offline measurement (i.e. without irradiation) of DUTs showed recovery to normal mode of operation after 24 h annealing. The level of pulse peaks in the base voltage terminals of DUT1 and DUT2 were compared as V_b2Fluence1 > V_b1Fluence1 and V_b2Fluence2 > V_b1Fluence2. A comprehensive analysis of RD region in DUTs with reference to Area (A₁, A₂), Peak (P₁, P₂), Height (H), and Full width at half maximum (FWHM) were investigated.     

Thick Lithium Metal Target for Fast Neutron Production

A high flux fast neutron was produced by the (d, n) reaction of a lithium metal target. A thick lithium layer for the target was prepared by a simple method of melt-coating on a copper plate. The fast neutron (>9 MeV) flux at a distance of 6mm from the target was (9.0±1.6)×l0⁶ n/cm²·sec·μA with use of a 2.0 MeV deuteron beam. A flux of 2.7×10⁹ n/cm²·sec was obtained by bombarding the target with the deuteron beam of 300 μA.     

Mechanism of elongation of gold or silver nanoparticles in silica by irradiation with swift heavy ions

It has been reported that elongated Au nanoparticles oriented parallel to one another can be synthesized in SiO₂ by ion irradiation. Our aim was to elucidate the mechanism of this elongation. We prepared Au and Ag nanoparticles with a diameter of 20 nm in an SiO₂ matrix. It was found that Au nanoparticles showed greater elongated with a higher flux of ion beam and with thicker SiO₂ films. In contrast, Ag nanoparticles split into two or more shorter nanorods aligned end to end in the direction parallel to the ion beam. These experimental results are discussed in the framework of a thermal spike model of Au and Ag nanorods embedded in SiO₂. The lattice temperature exceeds the melting temperatures of SiO₂, Au and Ag for 100 ns after one 110 MeV Br¹⁰⁺ ion has passed through the middle of an Au or Ag nanorod.     

Lattice location and annealing behaviour of Pt and W implanted sapphire

Sapphire (α-Al₂O₃) single crystals were implanted with different doses of Pt and W ions in the range of 1 × 10¹⁴ at/cm² to 5 × 10¹⁶ at/cm² at room temperature. Detailed angular scans through the main axial directions show that up to 10¹⁵ at/cm² fluences about 80% of the W and Pt ions are incorporated into substitutional or near substitutional lattice sites. Below the amorphization threshold implantation damage show a double peak structure which anneals out partially at low temperature (800^oC). Amorphization of the implanted region starts for doses of the order of 1 × 10¹⁶ at/cm². The amorphous layer regrowths epitaxially in vacuum at 1100^oC, with a velocity of 3 Å/min and stops when the crystalline/amorphous interface reaches the region of maximum Pt concentration. When the annealing is done at ambient atmosphere the damage recovers completely at 1100^oC even for doses of the order of 5 × 10¹⁶ Pt⁺/cm² leading to the formation of Pt precipitates.     

Radiation damage and surface deformation effects on stainless steel produced by helium-ion bombardment

Radiation damage and surface deformation by neutrons to first-wall CTR materials were simulated by means of 3 MeV helium ions. The irradiation was performed at a CIP cyclotron, with beam intensities of 1–2 μA at room temperature. We have irradiated commercial Romanian, Soviet and Japanese stainless steels (W 4016, 12KH18N10T, W 4541) at doses between 2 × 10¹⁷ and 6 × 10¹⁸ ions per cm². The exfoliations were investigated by means of a TEMSCAN 200-CX electron microscope and a metallographic ORTHOPLAN POL LEITZ microscope. The main post-irradiation characteristics for each type of stainless steel (critical doses for exfoliation, dominant surface morphologies) are discussed. An irradiation facility for obtaining a homogeneous distribution of damage for 27 MeV helium ions (rotating energy degrader) is also presented.     

Synthesis of Amino Acids by 60Co Gamma Irradiation

Measurements of creep by the indentation with Knoop indenter were performed for sintered UO₂ pellets before and after irradiation and a non-irradiated single crystal with an applied load of 50 g. Room temperature creep of non-irradiated sinters included grain boundary sliding. The creep at the lowest dose (7.8×10¹⁴ fiss./cm³) also involved the grain boundary sliding, while no creep was observed after irradiation of 2.9×10¹⁶ fiss./cm³. Irradiated sinters at a dose between 1.4×10¹⁶ and 1×10¹⁸ fiss./cm³ yielded not only primary creep without the grain boundary sliding but also secondary creep, in which cracks were formed when a dose was less than 4.8×10¹⁷ fiss./cm³. At a dose of 1×10¹⁸ fiss./cm³ the enhanced secondary creep independent of the temperature between 100 and 150°C was observed.     

High efficiency gettering of Au in Si(1 1 1) by MeV C implantation

A study of MeV C implantation induced effects on gettering of Au (2.2 × 10¹⁵ cm⁻²), implanted into Si(1 1 1), has been carried out using Rutherford backscattering spectrometry. A 2 h anneal in Ar at 850 °C has been found to result in a gettering efficiency close to 55%. It increases beyond 80% with a further 2 h anneal at 900 °C. The C dose (0.3–1.5 × 10¹⁶ cm⁻²) dependence of Au gettering is also presented and discussed.     

Doping of 6H–SiC pn structures by proton irradiation

The influence of proton irradiation on current–voltage characteristics, N_d − N_a values and parameters of deep centres in 6H–SiC pn structures grown by sublimation epitaxy has been studied. The irradiation was carried out with 8 MeV protons in the range of doses from 10¹⁴ to 10¹⁶ cm⁻². Irradiation with a dose of 3.6 × 10¹⁴ cm⁻² leaves the voltage drop at high forward currents (10 A/cm²) practically unchanged. For higher irradiation dose of 1.8 × 10¹⁵ cm⁻², the forward voltage drop and the degree of compensation in the samples increased ; partial annealing of the radiation defects and partial recovery of the electrical parameters occurred after annealing at T∼400–800 K. Irradiation with a dose of 5.4 × 10¹⁵ cm⁻² resulted in very high resistance in forward biased pn structures which remained high even after heating to 500°C. It is suggested that proton irradiation causes decreasing of the lifetime and formation of an i- or an additional p-layer.     

Low temperature fatigue crack propagation in neutron-irradiated type 316 steel and weld metal

The fast cycling fatigue crack propagation characteristics of type 316 steel and weld metal have been investigated at 380°C after irradiation to 1.72?1.92 × 10²⁰ n/cm²($\text{E > 1}$ MeV) and 2.03 × 10²¹ n/cm² ($\text{E > 1}$ MeV)at the same temperature. With mill-annealed type 316 steel, modest decreases in the rates of crack propagation were observed for both dose levels considered, whereas for cold-worked type 316 steel irradiation to 2.03 × 10²¹ n/cm² ($\text{E > 1}$ MeV) caused increases in the rate of crack propagation. For type 316 weld metal, increases in the rate of crack propagation were observed for both dose levels considered.The diverse influences of irradiation upon fatigue crack propagation in these materials are explained by considering a simple continuum mechanics model of crack propagation, together with the results of control tensile experiments made on similarly irradiated materials.     

Einführung in die Werkstoffwissenschaft (in German): ed. W. Schatt (VEB Deutscher Verlag für Grundstoffindustrie,Leipzig, 1972, DM 35)

Copper samples were irradiated with fast neutrons at temperatures in the range 220–550 °C and at instantaneous fluxes in the range 2 × 10¹³-3 × 10¹⁴ n/cm².sec > 0.1 MeV. The maximum swelling was observed at 0.45 $\text{T}{}_{\mathrm{f}}$ for an instantaneous flux of 3 × 10¹⁴ n/cm²-sec. A fourfold reduction of the instantaneous flux, at constant dose, displaces the maximum to lower temperatures and slightly increases its magnitude. Cold work before irradiation does not appear to have a significant effect on swelling. Alloying with solutes which lower the stacking-fault energy appears to displace the domains of swelling towards lower temperatures for a fixed instantaneous flux and towards lower flux for a fixed temperature.     

Effect of Nitrogen Ion Implantation in Copper

In this study, copper samples with 99% purity implanted by N⁺ and N₂ ⁺ ions. Implantation of ions performed at 50 keV and various doses ranging from 1 × 10¹⁷ to 1 × 10¹⁸ ions/cm². Morphology of samples’ surface studied by atomic force microscopy. Microstructure of modified surfaces after ion implantation obtained using grazing incidence X-ray diffraction technique (GIXRD). Formation of both copper nitride and copper trinities confirmed by GIXRD results. Microhardness properties and corrosion behavior of implanted samples measured by Vickers and corrosion test, respectively. The maximum hardness of copper surface observed after nitrogen ion implantation at the dose of 3 × 10¹⁷ ions/cm². Moreover, the results showed that corrosion resistivity significantly increase.     

Surface refractive indices and profile widths of He implanted LiNbO3 waveguides

He implanted LiNbO₃ waveguides have been investigated by dark and bright line spectroscopy. The refractive index profiles were reconstructed with an improved inverse WKB procedure. In the region of electronic damage the resulting profiles are very reliable. Likewise the surface-side flank of nuclear damage induced refractive index decrease is reproduced with high accuracy. In contrast with other reconstruction schemes we determine refractive indices close to the surface with an accuracy better than 2 × 10⁻⁴. However, the full range of nuclear damage cannot be explored. We discuss how the profile parameters depend on ion energy and irradiation dose. At 3.17 MeV the helium enriched layer seems to saturate for doses above 5 × 10¹⁵ cm⁻². Electronic damage increases the ordinary and decreases the extraordinary refractive index, more for higher doses and less for higher energies.