杂环有机硅烷自组装膜为载体的ABS树脂表面镀铜

本研究通过在电晕放电处理的ABS树脂表面自组装6-(3-三乙氧基硅基丙基氨)-1,3,5-三嗪-2,4-二硫醇单钠盐(TES)薄膜后,进行化学镀铜研究。借助X-射线光电子能谱(XPS)、傅里叶变换红外光谱(FT-IR)、扫描电子显微镜(SEM)对ABS树脂、自组装薄膜及化学镀铜表面进行了表征,同时对化学镀铜做了粘接性能测试。结果表明:经TES自组装薄膜修饰后的ABS树脂表面呈现大量孔状结构,使ABS树脂表面的粗糙度增大,提高了ABS树脂与铜的结合力;化学镀铜后表面铜颗粒致密且均匀;盐水浸泡实验表明,经TES自组装薄膜修饰后的ABS树脂与铜层之间表现出良好的粘接特性。     

硅烷自组装膜对制备于多孔性基底上导电聚吡咯薄膜性能的影响

采用硅烷偶联剂对在多孔性绝缘Al2O3膜基底上形成的导电聚吡咯(polypyrrole, PPy)薄膜的形貌及导电性能进行了改善,并探讨了硅烷自组装膜与导电PPy薄膜的形成机理.用硅烷偶联剂对Al2O3膜表面进行改性后,形成了与基底牢固结合的硅烷自组装膜,然后通过化学聚合法在自组装膜上制备得到了均匀致密的PPy薄膜.结果表明:硅烷偶联剂有效地改善了PPy薄膜的均匀性及其与基底的附着性,电导率从5.4S/cm提高到了16.6S/cm.     

添加剂对氯化物体系电镀铁镀层表面形貌的影响

以铝片为基底,研究了不同添加剂对氯化物镀铁体系镀层形貌的影响。实验发现,糖精主要起柔韧剂作用,可避免镀层开裂;强还原剂抗坏血酸主要稳定镀液中的Fe2+,避免Fe3+对镀层性能的影响,同时抗坏血酸也在一定程度上对镀层有整平作用;十二烷基硫酸钠可提高镀液对镀层的浸润性能,有利于电镀过程的传质,同时使电镀过程中产生的氢气快速逸出,形成致密平整的微观表面。通过将上述添加剂加入到氯化物镀铁体系,使镀层致密光亮,铁晶粒均匀、细小致密,镀层性能优良。     

摩擦学性能优异的新石墨烯薄膜

<正>据报道,最近,中科院兰州化学物理研究所在石墨烯薄膜研制及其摩擦学性能研究方面获得新进展。研究人员利用氧化石墨烯表面的活性环氧基、羧基与氨基的化学作用,将其组装到3-氨丙基三乙氧基硅烷自组装薄膜(APTS-SAMs)修饰的单晶硅基底表面,然后进行热还原处理,得到了还原的石墨烯     

铝及铝合金表面直接电镀铅工艺

铝及铝合金的电镀一般需要浸锌和预镀处理,工艺复杂,镀层质量不易控制.为此,将铝及铝合金经化学和电化学前处理后,直接置于加有细化剂、稳定剂和阻氢剂的电镀液中施镀,采用电流密度为0.5～2.0 A/dm2的直流电源进行电镀,所得镀层均匀、致密、表面光滑、无起泡、起壳现象,镀层与铝基底具有良好的结合力.本工艺比传统工艺程序简单、易操作,镀层质量高.     

高频脉冲电镀镍钴合金拉伸强度的研究

研究了高频脉冲电镀Ni-Co复合镀层的拉伸力学性能、显微硬度及镀层表面的微观形貌。结果表明,随着频率的增加,沉积层表面更加致密、均匀,显微硬度增大,镀层的弹性模量及拉伸强度随脉冲频率增加而先增大后减小,并在80 kHz处取得最大值。     

碳纤维表面电镀铜工艺的研究

首先对碳纤维进行氧化处理,然后尝试采用三种电镀工艺对碳纤维进行电镀铜处理,并对处理结果进行SEM观察与分析.氧化结果表明:单一氧化处理结果并不理想,采用气相-液相联合氧化法效果良好.电镀铜处理结果表明:采用普通酸性镀铜工艺,镀层组织粗大且易脱落,碳纤维易出现"结块"现象;采用焦磷酸盐电镀工艺易出现"黑心"现象;采用柠檬酸盐电镀工艺效果最佳,镀层均匀致密且界面结合力强,有效避免了电镀过程中的"结块"和"黑心"现象,实现成束碳纤维的均匀镀.     

大型不锈钢工件镀厚镉

自氰化物电解液中电镀镉虽已较普遍地用于生产,但获得的镀层均较薄,一般为50微米以下。L.W.Owen介绍了可获得125微米光滑镀层的工艺,如要获得比这更厚的镉层,并要求保持致密和光滑的表面状态,尚未得到满意的结果。因为它和其它许多电镀层一样,将随着厚度的增加而变得粗糙。然而,企图从酸性电解液中获得均匀、致密     

NdFeB表面镀镍层不同脉冲参数时的形貌及性能

与直流电镀相比,脉冲电镀具有许多优点;而目前有关脉冲参数对NdFeB表面镀镍层耐蚀性影响的研究少有报道.以NdFeB为基体材料,以不同的电流密度和占空比脉冲电镀镍,利用扫描电镜(SEM)观察镀层表面形貌,在3.5％ NaCl溶液中进行极化曲线和交流阻抗谱测试考察镀层的耐蚀性能,并测量镀层硬度以及结合强度,以获得最佳脉冲电镀工艺.结果表明:NdFeB表面脉冲电镀镍层较直流电镀层晶粒更细,表面更光滑平整;电流密度为2 A/dm2,占空比为0.4时,镀层表面晶粒均匀致密,表现出良好的耐腐蚀性能;脉冲电镀层的硬度大于直流电镀层,且在电流密度2 A/dm2,占空比0.4时硬度最大,达497.5 HV0.98N,热震20次表现出良好的结合性能.     

亚铁氰化钾对以次磷酸钠为还原剂化学镀铜的影响

研究亚铁氰化钾对化学镀铜沉积速度、镀层成分、电阻率、微观结构、表面形貌和化学镀铜过程中氧化还原反应的影响.添加亚铁氰化钾可以显著降低沉积速度,使镀层变得均匀致密,颜色也从棕黑色变为亮铜色,电阻率明显降低.添加亚铁氰化钾还可使镀层P含量略微降低,改善镀层微观结构,晶粒尺寸增大,镀层由(111)晶面择优取向变为(220)晶面择优取向.亚铁氰化钾主要通过吸附作用抑制在镀层表面发生的次磷酸钠氧化反应而降低化学镀铜沉积速度.亚铁氰化钾还可明显降低化学镀铜过程中NaH2PO2/CuSO4消耗摩尔比.     

二甲基亚砜中半导体上脉冲电沉积Bi薄膜

从原有的化学镀铜的工业配方出发，对其用量进行改良，特别是镀液的pH值调试，配体的使用和还原剂的用量，在硅片上沉积出一层光亮而且致密的铜薄膜。结果表明，在二甲基亚砜中硅铜基体上的电沉积铋薄膜均匀、致密、粘附力强，XRD测试表明铋以晶体析出。     

铈离子-氨基复合引发N-异丙基丙烯酰胺表面接枝聚合

将硅片用"Piranha"溶液浸蚀处理,使其表面富含羟基,然后用3-氨基丙基-三乙氧基硅烷（APTES）进行表面修饰,得到硅片表面APTES单分子层,利用APTES分子上的氨基与Ce⁴⁺组成复合引发聚合体系,引发N-异丙基丙烯酰胺（NIPAm）单体进行硅表面接枝聚合。采用表面接触角测定（CA）、X-射线光电子能谱分析（XPS）和原子力显微镜（AFM）分析对产物进行表征,结果表明约50nm厚度的聚N-异丙基丙烯酰胺薄膜能成功地接枝到硅片表面。     

Study of electroless copper plating on ABS resin surface modified by heterocyclic organosilane self-assembled film

6-(3-triethoxysilylpropyl)amino-1, 3, 5-triazine-2, 4-dithiol monosodium (TES) was used to fabricate self-assembled film on corona pretreated acrylonitrile–butadiene–styrene (ABS) resin surface. The self-assembled film modified ABS resin was treated by electroless copper plating. Orthogonal test was carried out to study optimal condition of the process. The surface appearance, plating rate and thickness of electroless copper films were investigated to determine the optimal time of corona-discharge, self-assembly and electroless copper plating. SEM results indicated that porous morphology appeared on ABS resin surface modified by TES self-assembled film and the surface roughness also increased. The adhesion test showed that the adhesion property between ABS resin and copper was excellent. The surface of electroless copper film had high brightness under the optimal condition of 1 min corona-discharge, 30 min self-assembly and 10 min electroless copper plating. The electroless-copper plating temperature was 55 ～ 60°C and pH was 13 ～ 13·5.     

Microstructure and friction performance of copper film fabricated by ion implantation assisted electroless plating on PTFE

Abstract

The polytetrafluoroethylene (PTFE), which was implanted with Ni ion to different energy and doses, fabricated metallic structures by selective electroless copper plating. The characteristic and microstructure of the copper film were studied using SEM and X-ray diffraction. Friction performance of the interface between copper film and basal body of PTFE was tested with a CETR UMT-2 (CETR Co., Campbell, CA, USA) multifunction micromechanics instrument. The test loads were 10, 20 and 40 N, while the line velocity was 8 mm s^?1, and the frequency of data acquisition was 1 Hz. The Ni ion implantation replaces the complicated electroless plating surface pretreatment, and it is an assisted technique of electroless plating of copper on the surface of PTFE and plate Cu directly on its surface. Continuous, prepressing and uniformity plating was obtained with proper technique parameters and the dosage of Ni⁺. The frictional performance comprehensive property of copper film was remarkably influenced by different plating methods, annealing treatment and testing loads under unlubricated condition. The friction coefficients and wear rates changed with the varied load. Annealing treatment improves the tightness and uniformity of the copper film, while it decreases its cavity. Friction performance of copper film was thus increased. The mechanisms of friction and wear of copper film under different test conditions are also discussed.     

Sputter deposition of ZnO nanorods/thin-film structures on Si

Using a recently developed sputter deposition technique, ZnO deposits were grown at the room temperature on silicon wafers with various kinds of copper surface layers. The copper layers were prepared using sputter deposition, thermal evaporation, or electroless plating technique. It was found that the surface copper prepared using both sputter deposition and thermal evaporation technique grew only ZnO thin films, while the surface copper prepared using sputter deposition technique grew ZnO nanorods/thin-film deposits. The relation between the copper characteristics and the growth of ZnO nanorods/thin-film deposits was investigated. The growth kinetics of the ZnO nanorods/thin film structure is also discussed.     

A novel technique for fabrication of metallic structures on polyimide by selective electroless copper plating using ion implantation

The successful use of palladium ion implantation into polyimide to seed an electroless plated film of copper on the polyimide surface is reported. Polyimide (Hitachi PIX 3400) was implanted with palladium ions to doses of 1.5 × 10¹⁵ − 1.2 × 10¹⁷ ions cm⁻² using a MEVVA ion implanter. The implanted ions acted as sites for nucleation of copper film. A copper film was then deposited on implanted polyimide using a commercial electroless plating solution. The ion energy was kept low enough to facilitate a low critical ‘seed’ threshold dose that was measured to be 3.6× 10¹⁶ Pd ions cm⁻². Test patterns were made using polyimide to study the adaptability of this technique to form thick structures. Plated films were studied with optical microscopy, Rutherford Backscattering Spectrometry (RBS) and Profilometry. The adhesion of films was qualitatively assessed by a ‘scotch tape test’. The film growth (thickness) was observed to be linear with plating time. A higher implantation dose led to greater plating rates. The adhesion was found to improve with increasing dose.     

硅烷偶联剂对制备硅酸锆薄膜及其抗氧化性能的影响

采用乙酸锆和正硅酸乙酯为原料, 硅烷偶联剂3-氨丙基三乙氧基硅(APTES)为表面改性剂, 通过溶胶-凝胶法制备了致密硅酸锆薄膜。系统研究了APTES的添加对硅酸锆薄膜的晶体结构、显微形貌及其抗氧化性能的影响。实验结果表明, 添加硅酸锆摩尔浓度10mol%的APTES可以制备出纯相的致密硅酸锆薄膜, 超过这一浓度则会出现少量的SiO₂杂质, 同时造成硅酸锆溶胶的黏度迅速升高。AFM测试结果表明添加APTES制备的薄膜更致密平滑。1300℃抗氧化测试102 h后, 未镀膜的碳化硅基底增重0.16%, 相比之下, 添加APTES前后的样品的增重分别为0.08% 和0.03%, 说明添加APTES有利于提高ZrSiO₄薄膜的致密度, 进而提高其抗氧化性能。     

Temperature and pH dependence of the electroless Ni–P deposition on silicon

The sensitization, activation, nucleation and growth of electroless Ni–P deposition on silicon in an acid plating bath with sodium hydrophosphite as reducing agent and sodium succinate as complexing agent were studied by transmission electron microscopy, field emission scanning electron microscopy and atomic force microscopy. The results show that a continuous polycrystalline SnCl₂ film was formed on the silicon surface in the sensitization process, and small crystalline Pd particles were dispersedly produced on SnCl₂ film in the activation process. In the initial deposition stage, the small Ni–P particles had already emerged on the silicon surface in a deposition time of less than 2 s. When Ni–P particles grew, their size increased but their number decreased, and they later developed into a columnar structure. The deposition rate of the electroless Ni–P deposit increased as the pH value and the temperature of the plating bath increased (from 1.36 to 29.66 μm/h). The activation energy of the electroless Ni–P deposition on silicon increased as the pH value of the plating bath decreased (from 68.8 to 79.4 kJ/mol).     

Attachment of functionalized single-walled carbon nanotubes (SWNTs) to silicon surfaces

Single-walled carbon nanotubes (SWNTs) were functionalized by direct fluorination and subsequent reaction with 6-aminohexanoic acid for water-soluble carboxylic acid functionalized SWNTs (AHA-SWNTs). Both of the compounds were used as precursors to attach SWNTs to APTES coated silicon surfaces. AHA-SWNTs in aqueous solution were reacted with APTES self-assembled monolayers (SAMs) with coupling reagents N-(3-dimethylaminopropyl)-N'-ethylcarbodiimide (EDC) and N-hydroxysuccinimide (NHS). The surface coverage is a function of concentration of AHA-SWNTs, solvent and coupling method. While for the fluorinated SWNTs (F-SWNTs), direct addition of F-SWNTs to preformed APTES SAMs at 90 degrees C shows essentially no reaction, in contrast to the one-pot reaction of F-SWNTs with APTES molecules in the presence of SWNTs on a silicon substrate. This reaction route provides a convenient method to attach SWNTs to silicon surfaces.     

Surface-enhanced Raman scattering dendritic substrates fabricated by deposition of gold and silver on silicon

This paper reports a study on the preparation of gold nanoparticles and silver dendrites on silicon substrates by immersion plating. Firstly, gold was deposited onto silicon wafer from HF aqueous solution containing HAuCl4. Then, the silicon wafer deposited gold was dipped into HF aqueous solution of AgNO3 to form silver coating gold film. Scanning electron microscopy reveals a uniform gold film consisted of gold nanoparticles and rough silver coating gold film containing uniform dendritic structures on silicon surface. By SERS (surface-enhanced Raman scattering) measurements, the fabricated gold and silver coating gold substrates activity toward SERS is assessed. The SERS spectra of crystal violet on the fabricated substrates reflect the different SERS activities on gold nanoparticles film and silver coating gold dendrites film. Compared with pure gold film on silicon, the film of silver coating gold dendrites film significantly increased the SERS intensity. As the fabrication process is very simple, cost-effective and reproducible, and the fabricated silver coating gold substrate is of excellent enhancement ability, spatial uniformity and good stability.