Polarization dependent optical absorption properties of single-walled carbon nanotubes and methodology for the evaluation of their morphology

Polarization dependence of the optical absorption properties of SWNTs is presented and investigated in detail for the energy range 0.5-6 eV. We found that the absorption peaks in the UV region at approximately 4.5 and 5.25 eV exhibit remarkable and different dependencies on the morphology of the SWNT film, or equivalently, on the incident light polarization relative to the SWNT axis. An analytical pathway to evaluate the physical degree of SWNT alignment for a vertically aligned SWNT film is developed with both transition dipoles parallel and perpendicular to the SWNT axis taken into account. This analytical procedure, coupled with polarized optical absorption measurements performed on the vertically aligned SWNT film grown on substrates, leads to the determination of the bare optical absorption cross-section of SWNTs for both parallel and perpendicular to SWNT axis. In the end, the proposed methodology for evaluating the SWNT film morphology is applied to investigate the transient change of the degree of alignment in the growth process of our vertically aligned SWNT films.     

UV Raman characteristics of nanocrystalline diamond films with different grain size

Nanocrystalline diamond films with different size were characterized by ultraviolet (UV) (244 nm) Raman spectroscopy. It was found that a diamond peak at 1333 cm⁻¹ was enhanced, while the D and G peak of graphite as well as photoluminescence was suppressed, compared with that measured by visible (514.5 nm) Raman. With decreasing the particle size from 120 to 28 nm, the diamond peak shifts from 1332.8 to 1329.6 cm⁻¹, the line width of the peak becomes broader, the intensity ratio of diamond and G peak decreases. The down shift and broadening of the diamond peak depending on the particle size by UV Raman measurements are consistent with the phonon confinement model.     

Impacts of thickness reduction and heat treatment on the optical properties of thin chalcogenide films

Bi-based chalcogenides, in the form of thin crystalline films, were deposited at different thicknesses onto highly cleaned glass slides with the aid of vacuum thermal evaporation technique. The influence of thermal annealing on the optical properties of Bi₂Te₃-Bi₂Se₃ films at different thicknesses is investigated in this work. Wavelength dependence of the optical transmittance and reflectance was recorded, for the as-prepared and the annealed films, in the wavelength range from 350 to 2700 nm using a double beam spectrophotometer. Fundamental optical properties such as absorption coefficient and energy band gap were derived based on the measured spectra and film's thickness. We demonstrate in the present work that the synergy of annealing and thickness reduction can be exploited for light transmittance enhancements, and consequently for optoelectronic applications including transparent conductive electrodes.     

Growth of conformal single-walled carbon nanotube films from Mo/Fe/Al2O3 deposited by electron beam evaporation

We discuss growth of high-quality carbon nanotube (CNT) films on bare and microstructured silicon substrates by atmospheric pressure thermal chemical vapor deposition (CVD), from a Mo/Fe/Al₂O₃ catalyst film deposited by entirely electron beam evaporation. High-density films having a tangled morphology and a Raman G/D ratio of at least 20 are grown over a temperature range of 750-900 °C. H₂ is necessary for CNT growth from this catalyst in a CH₄ environment, and at 875 °C the highest yield is obtained from a mixture of 10%/90% H₂/CH₄. We demonstrate for the first time that physical deposition of the catalyst film enables growth of uniform and conformal CNT films on a variety of silicon microstructures, including vertical sidewalls fabricated by reactive ion etching and angled surfaces fabricated by anisotropic wet etching. Our results confirm that adding Mo to Fe promotes high-yield SWNT growth in H₂/CH₄; however, Mo/Fe/Al₂O₃ gives poor-quality multi-walled CNTs (MWNTs) in H₂/C₂H₄. An exceptional yield of vertically-aligned MWNTs grows from only Fe/Al₂O₃ in H₂/C₂H₄. These results emphasize the synergy between the catalyst and gas activity in determining the morphology, yield, and quality of CNTs grown by CVD, and enable direct growth of CNT films in micromachined systems for a variety of applications.     

Influence of N2/Ar gas mixture ratio and annealing on optical properties of SiCBN thin films prepared by rf sputtering

Optical properties of amorphous thin films of silicon carbon boron nitride (Si–C–B–N) obtained by reactive sputtering has been studied. Compositional variations were obtained by changing the nitrogen and argon gas mixture ratio in the sputtering ambient. The effect of gas ratios and annealing on the optical properties was investigated. It was found that the transmittance of the films increases with nitrogen incorporation. Annealing at higher temperatures leads to considerable increase in transmittance. Optical energy gap (Tauc gap) calculated from absorption data is influenced by annealing temperatures and reactive process gas mixture. Changes in optical properties were correlated to the chemical modifications in the films due to annealing, through X-ray photoelectron spectroscopy. Studies reveal that the carbon and nitrogen concentrations in the films are highly sensitive to temperature. Annealing at higher temperatures leads to broken C–N bonds which results in the loss of C and N in the films. This is believed to be the primary cause for variations in optical properties of the films.     

Electronic properties of double-walled carbon nanotube films

The electronic properties of as-prepared and purified DWNT films were tested using the four-probe method. The resistivity of the purified DWNT films is about 1 mΩ cm at room temperature and has a positive dρ/dT above 55 K, which shows a good metallic property. The electrical resistivities of the purified DWNT films are quite similar to those of the SWNT bundles and acid-treated SWNTs. Our results are correspondent with the early theoretical calculation on the band structure of DWNTs.     

Structure and optical properties of ZrxHf1-xO2 films deposited by pulsed laser co-ablation of Zr and Hf targets with the assistance of oxygen plasma

Group IVB metal oxides have demonstrated many potential applications in a variety fields owing to their excellent optical, mechanical, electrical, chemical and thermal properties. In this work, ternary oxides Zr_xHf_1-xO₂ films with variable compositions were deposited by pulsed laser co-ablation of a Zr target and a Hf target in an oxygen plasma generated by electron cyclotron resonance microwave discharge of O₂ gas. The oxygen plasma provided an environment containing a high concentration of reactive oxygen species for synthesizing oxides with the Zr and Hf species ablated from the Zr and Hf targets. The structure of the deposited films was characterized and the optical properties were evaluated together with the examination of the effects of post-deposition annealing on the structure and optical properties. The ternary Zr_xHf_1-xO₂ films are much alike with binary ZrO₂ and HfO₂ films in structure and optical properties. They have a monoclinic structure and are highly transparent in a wide spectral region from mid-ultraviolet to mid-infrared. The ultraviolet absorption edge and optical band gap vary slightly with the pulse energies of the laser beams ablating the targets. Annealing in N₂ resulted in the improvement in the film structure.     

Microstructural and optical properties of Ta-doped ZnO films prepared by radio frequency magnetron sputtering

Ta-doped ZnO films with different doping levels (0–5.02 at%) were prepared by radio frequency magnetron sputtering. The effects of the doping amount on the microstructure and the optical properties of the films were investigated. The grain size and surface roughness first significantly decrease and then slowly increase with the increase of Ta doping concentration. Both the grain size and the root mean square (RMS) roughness reach their minimum values at the doping content of 3.32 at%. X-ray Diffraction (XRD) patterns confirmed that the prepared Ta-doped ZnO films are polycrystalline with hexagonal wurtzite structure and a preferred orientation along the (002) plane. X-ray photoelectron spectroscopy (XPS) analysis reveals that Ta exists in the ZnO film in the Ta⁵⁺ and Ta⁴⁺ states. The average optical transmission values of the Ta-doped ZnO films are higher than those of the un-doped ZnO film in the visible region. The band gap energy extracted from the absorption edge of transmission spectra becomes large and the near band edge (NBE) emission energy obtained from PL spectra blueshifts to high energy when the Ta doping content grows from 0 at% to 5.02 at%, which can be explained by the Burstein–Moss shift.     

Nitrogenated nanocrystalline diamond films: Thermal and optical properties

Ultrananocrystalline diamond films have been grown by microwave plasma CVD using CH₄/H₂/Ar mixtures with N₂ added in plasma in amounts up to 25%. The films were characterized with AFM, Raman, XRD, and UV–IR optical absorption spectroscopy mainly focusing on optical and thermal properties. In comparison with polycrystalline CVD diamond the UNCD are very smooth (R_a < 10 nm), have low thermal conductivity ( 0.10 W/cm K), high optical absorption ( 10³ cm^− 1 at 500 nm) and high concentration of bonded hydrogen ( 9 at.%). The nitrogen presence in the plasma has a profound impact on UNCD structure and properties, particularly leading to a decrease in resistivity (by 12 orders of magnitude), thermal conductivity, Tauc band gap, optical transmission and H content. The UNCD demonstrated rather good thermal stability in vacuum: the diamond phase still was present in the films subjected to annealing to 1400 °C.     

Preparation and properties of 2D C/SiC-ZrB2-TaC composites

Two-dimensional (2D) C/SiC-ZrB₂-TaC composites were fabricated by chemical vapor infiltration (CVI) combined with slurry paste (SP) method. 2D laminate was prepared by stacking carbon cloth that was pasted with a mixture of polycarbosilane-ZrB₂-TaC slurry. A small amount of carbon fiber tows were introduced into the preform in the vertical direction. After heat-treated at 1800 °C, the 2D laminate was densified with SiC by CVI to obtain 2D C/SiC-ZrB₂-TaC composites. Properties including flexural strength, interlaminar shear strength, and thermal expansion of the composites were investigated. The ablation test was carried out under an oxyacetylene torch flame. The morphologies of the ablated specimens were analyzed. The results indicate that the adding vertical fiber tows and heat-treatment at 1800 °C can greatly improve the mechanical properties of the composites. The co-addition of TaC and ZrB₂ powders into C/SiC composite effectively enhance its ablation resistance.     

Controlled synthesis of Mg(OH)2 thin films by chemical solution deposition and their thermal transformation to MgO thin films

The chemical solution deposition of Mg(OH)₂ thin films on glass substrates and their transformation to MgO by annealing in air is presented. The chemical solution deposition consists of a chemical reaction employing an aqueous solution composed of magnesium sulfate, triethanolamine, ammonium hydroxide, and ammonium chloride. The as-deposited films were annealed at different temperatures ranging from 325 to 500?°C to identify the Mg(OH)₂-to-MgO transition temperature, which resulted to be around 375?°C. Annealing the as-deposited Mg(OH)₂ films at 500?°C results in homogeneous MgO thin films. The properties of the Mg(OH)₂ and MgO thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, UV–Vis spectroscopy, and by circular transmission line model. Results by X-ray diffraction show that the as-deposited thin films have a brucite structure (Mg(OH)₂), that transforms into the periclase phase (MgO) after annealing at 500?°C. For the as-deposited Mg(OH)₂ thin film, a nanowall surface morphology is found; this morphology is maintained after the annealing to obtain MgO, which occurred with the evident formation of pores on the nanowall surface. The assessed chemical composition from X-ray photoelectron spectroscopy yields Mg_0.36O_0.64 (O/Mg ratio of 1.8) for the as-deposited Mg(OH)₂ film, where the expected stoichiometric composition is Mg_0.33O_0.67 (O/Mg ratio of 2.0); the same assessment yields Mg_0.60O_0.40 (O/Mg ratio of 0.7) for the annealed thin film, which indicates the obtainment of a MgO material with oxygen vacancies, given the deviation from the stoichiometric composition of Mg_0.50O_0.50 (O/Mg ratio of 1.0). These results confirm the deposition of Mg(OH)₂ films and the obtainment of MgO after the heat-treatment. The energy band gap of the films is found to be 4.64 and 5.10?eV for the as-deposited and the film annealed at 500?°C, respectively. The resistivity of both Mg(OH)₂ and MgO thin films lies around 10⁸?Ω·cm.     

Effect of rapid thermal annealing on the properties of zinc tin oxide films prepared by plasma-enhanced atomic layer deposition

The effect of rapid thermal annealing treatments on the microstructure, surface morphology, and optical characteristics of zinc tin oxide (ZTO) films produced by plasma-enhanced atomic layer deposition was investigated. The ZTO films were annealed in oxygen atmosphere for 2 min at four selected temperatures from 500 to 800 °C. The X-ray diffraction showed that the annealing temperature has a great influence on the crystalline characteristics of ZTO films. The film shows complete amorphous structure for as-deposited ZTO film. Meanwhile, the spinel zinc stannate Zn₂SnO₄ was obtained for the samples annealed from 500 to 800 °C, which shows polycrystalline nature. The X-ray photoelectron spectroscopy proved that the annealing process in oxygen gas can effectively can reduce the oxygen vacancy defects in the films. In addition, the photoluminescence spectroscopy manifests an ultraviolet emission with a broad peak range from 345 to 385 nm. Moreover, the ultraviolet luminescence intensity increases continuously with the increase of annealing temperature. Spectroscopic ellipsometry analyses demonstrate that the refractive index of annealed films increases as the increase of annealing temperature, while the extinction coefficient decreases gradually with the increase of annealing temperature in the visible light range.     

An ellipsometric analysis of CVD-diamond films at infrared wavelengths

The ellipsometric measurements of diamond films, which were deposited onto polished [100]-oriented silicon and rough alumina ceramic substrates by hot filament chemical vapor deposition (HFCVD) technique, have been performed over the spectral range from 3 to 12 μm. The parameters of the films, namely, film thickness and volume fraction for each constituent have been calculated from the ellipsometric data by the best fitting procedure using the optimized model. A two-layer stack with about 870-nm thick surface rough layer on top of diamond basis can be perfectly used to simulate the films on silicon substrates. However, the films on alumina substrates cannot be well described by the two-layer model. For the sake of good fit, a three-component interface layer, which consists of 64.13±4% alumina, 23.34±3% diamond and 12.53±1% void, must be appended to the model by Bruggeman effective medium approximation.     

Preparation by chemical solution deposition and transparent conducting properties of LaRh1-xNixO3 thin films

Transparent conducting thin films have been widely used in lots of fields. The absence of high-performance hole-type transparent conducting thin films, however, seriously limits the wider applications. LaRhO₃ as a type of perovskite material shows hole-type conduction with semiconductor-like properties and no investigations have been carried out about transparent conducting properties on LaRhO₃ thin films. Here, LaRh_1-xNi_xO₃ (x = 0, 0.05, 0.1) thin films were firstly deposited by chemical solution deposition, showing epitaxial growth on single crystal SrTiO₃ (001) substrates with the epitaxial relationship of LaRhO₃(001)[110]||SrTiO₃(001)[110]. With the doping of Ni element, the surface morphology became denser. Hall measurements confirmed that the hole concentration was enhanced with Ni doping, resulting in the decreased resistivity. Low resistivity of 17.3 mΩ cm at 300K was obtained for the LaRh_0.9Ni_0.1O₃ thin films. The electrical transport mechanisms were investigated, showing thermal activation at high temperatures and variable range hopping model for the doped thin films at low temperatures. The transmittance within the visible range for all thin films was higher than 50%. The results will provide a feasible route to deposit hole-type transparent conducting LaRhO₃-based thin films.     

Microstructure and EMW absorbing properties of SiCnw/SiBCN-Si3N4 ceramics annealed at different temperatures

SiC nanowire/siliconboron carbonitride-Silicon nitride (SiC_nw/SiBCN-Si₃N₄) ceramics were prepared via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique. The as-prepared ceramics were annealed at varying temperatures (1200–1600 °C) in a N₂ atmosphere, and their crystallization mechanism and absorbing properties were subsequently studied. The absorbing properties of the SiC_nw/SiBCN-Si₃N₄ ceramics improved with the annealing temperature up to a certain value and decreased thereafter. Among the samples tested, the SiC_nw/SiBCN-Si₃N₄ ceramics annealed at 1300 °C showed the highest permittivity (real and imaginary parts) and dielectric loss values in the X-band (ca. 5.34, 2.55, and 0.47 respectively), and this could be attributed to the precipitation of carbon and SiC nanocrystals. The sample treated at 1300 °C decreased its minimum reflection coefficient (RC) from −12.0 to −59.68 dB (compared with the as-received SiC_nw/SiBCN-Si₃N₄ ceramics) and the effective RC (below -10 dB) in the whole X-band could be achieved when the thickness was set to 3–3.5 mm. These results revealed that the absorbing performance was significantly improved after the heat treatment at 1300 °C.     

Effect of substrate temperature on microstructure and optical properties of nanocrystalline alumina thin films

Aluminum oxide (Al₂O₃) thin films were deposited on silicon (100) and quartz substrates by pulsed laser deposition (PLD) at an optimized oxygen partial pressure of 3.0×10^?3 mbar in the substrate temperatures range 300–973 K. The films were characterized by X-ray diffraction, transmission electron microscopy, atomic force microscopy, spectroscopic ellipsometry, UV–visible spectroscopy and nanoindentation. The X-ray diffraction studies showed that the films deposited at low substrate temperatures (300–673 K) were amorphous Al₂O₃, whereas those deposited at higher temperatures (≥773 K) were polycrystalline cubic γ-Al₂O₃. The transmission electron microscopy studies of the film prepared at 673 K, showed diffuse ring pattern indicating the amorphous nature of Al₂O₃. The surface morphology of the films was examined by atomic force microscopy showing dense and uniform nanostructures with increased surface roughness from 0.3 to 2.3 nm with increasing substrate temperature. The optical studies were carried out by ellipsometry in the energy range 1.5–5.5 eV and revealed that the refractive index increased from 1.69 to 1.75 (λ=632.8 nm) with increasing substrate temperature. The UV–visible spectroscopy analysis indicated higher transmittance (>80%) for all the films. Nanoindentation studies revealed the hardness values of 20.8 and 24.7 GPa for the films prepared at 300 K and 973 K respectively.     

二硫化钼纳米微粒改性聚乙烯研究

通过红外、热重、差热等分析手段及拉伸实验,研究了二硫化钼(MoS2)纳米球与纳米片对聚乙烯(PE)塑料性能的影响。发现添加MoS2后,PE塑料的降解温度、结晶峰温度与玻璃化温度均有提高,同时材料的拉伸强度也得到明显提升,其中MoS2纳米片对PE的改性效果最佳。MoS2纳米球与MoS2纳米片的微观结构不同,因而导致了它们改性PE塑料效果的差别。     

Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition

Cuprous oxide (Cu₂O) thin films were prepared by using electrodeposition technique at different applied potentials (−0.1, −0.3, −0.5, −0.7, and −0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV–vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.     

Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates

The influence of the ZnO buffer layer thickness on the electrical and optical properties of In₂O₃–10 wt.% ZnO and ZnO bilayers deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering were investigated. The optimum ZnO buffer layer thickness was found to be 90 nm which gives the lowest electrical resistivity of the bilayer of IZO and ZnO deposited on the PET substrate. The surface roughness decreases and diffusion of moisture and gas is more efficiently restrained, which contributes to lower the resistivity of the bilayer as the ZnO buffer layer thickness is increased. On the other hand, the total resistivity of the bilayer increases as the ZnO buffer layer thickness is increased because the resistivity of ZnO is higher than that of IZO. Introduction of a ZnO buffer layer does not nearly affect the IZO/ZnO/PET sample.     

Fabrication,structural and vibrational properties,and physical and optical properties tailoring of nanocrystalline MoS2 films

The modification and tuning features of nanostructured films are of great interest because of controllable and distinctive inherent properties in these materials. Here, nanocrystalline MoS₂ films were fabricated on the stainless steels by a radio frequency magnetron sputtering at ambient temperature. X-ray photoelectron spectroscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction and Raman scattering spectroscopy were used to study the chemical state, chemical composition, crystal structure and vibrational properties of the fabricated MoS₂ films. The bias voltage dependent structural evolution and its influence on the optical properties of MoS₂ nanocrystalline films were systematically investigated. Besides, the residual stresses of MoS₂ nanocrystalline films were explored by employing sin²ψ approach. X-ray diffraction demonstrates that the nanocrystalline MoS₂ films have single-phase hexagonal crystal structure. All MoS₂ films are polycrystalline in nature. The bandgap values are found to be intensively dependent on bias voltage. Our findings show that the nanocrystalline MoS₂ films with different physical properties and intense quantum confinement effect can be realized through adjusting bias voltages. This work may provide deep insight for realizing transitional metal dichalcogenide-based nanostructured film optoelectronic devices with tunable physical properties through a traditional, very cost-effective, and large-scale fabrication method.