Significantly enhanced breakdown field with high grain boundary resistance and dielectric response in 0.1Na0.5Bi0.5TiO3-0.9BaTiO3 doped CaCu3Ti4O12 ceramics

Electrical performances are strongly associated with the electrical heterogeneity of grains and grain boundaries for CaCu₃Ti₄O₁₂ (CCTO) ceramics. In this work, the dielectric ceramics of 0.1Na_0.5Bi_0.5TiO₃-0.9BaTiO₃ (NBT-BT) doped CCTO were fabricated by a conventional solid-state reaction method, and the ceramics were sintered at 1100 °C for 6 h. Relatively homogeneous microstructures are obtained, and the average grain sizes are characterized about 0.9∼1.5 μm. Impressively, a significantly enhanced breakdown field of 13.7 kV/cm and a noteworthy nonlinear coefficient of 19.4 as well as a lower dielectric loss of 0.04 at 1 kHz are achieved in the 0.94CCTO-0.06(NBT-BT) ceramics. It is found that the improved electrical properties are attributed to the increased grain boundary resistance of 3.7 × 10⁹ Ω and the Schottky barrier height of 0.7 eV. This is originated from the NBT-BT compound doping effect. This work demonstrates an effective approach to improve electrical properties of CCTO ceramics by NBT-BT doping.     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

Giant dielectric permittivity and non-linear electrical behavior in CaCu3Ti4O12 varistors from the molten-salt synthesized powder

CaCu₃Ti₄O₁₂ (CCTO) powder has been prepared by a molten salt method using the NaCl–KCl mixture. Crystal structure and microstructure of the powder and the resulting ceramics have been characterized by using X-ray diffraction (XRD) and scanning electron microcopy (SEM). Impedance analyzer and current–voltage meter were employed to analyze dielectric and nonlinear (I–V) properties of the CCTO ceramics with different sintering durations and subsequent cooling rates. The values of dielectric permittivity and nonlinear coefficient of the quenched sample were found to be higher than those of the slowly cooled sample. More specifically, the cooling methods (quenching and furnace-cooling) have allowed to adjust; (?) the breakdown voltage within a rather low range of 0.3–4.4 kV cm⁻¹; (??) the nonlinear coefficient between 2 and 6 and (???) the giant dielectric permittivity for the ceramics within a range from 5000 to 20000. A double Schottky barrier can be evidenced from the linear behavior between the ln J and E^1/2 in grain boundary regions. The relationship between the electrical current density and the applied electrical field indicates that the potential barrier height Φ_B is holding time dependent.     

Origin of high dielectric performance in fine grain-sized CaCu3Ti4O12 materials

We report on high dielectric constant (8.3 × 10³, 10⁴ Hz), low dielectric loss (0.029, 10⁴ Hz) as well as fine grain size (∼840 nm) achieved in pure CaCu₃Ti₄O₁₂ (CCTO) ceramics through a combination of sol–gel method, spark plasma sintering and annealing process. By adjusting the sintering temperature and annealing conditions, the composition variations, valence states and microstructures of CCTO ceramics are systematically studied, which provide direct clues in understanding the origin of their excellent dielectric response. Through the studies on the dielectric, impedance, modulus and conductivity properties of CCTO ceramics, a modified brick-layer model based on two interfacial polarizations originating from sub-grain boundary and grain boundary barriers is proposed to explain their dielectric behaviors. The high dielectric constant of CCTO ceramics is mainly dominated by the sub-grain contribution; and the reduced dielectric loss is attributed to the decreases of electrical conductivity and relaxation loss.     

Optimize the dielectric properties of CaCu3Ti4O12 ceramics by adjusting the conductivities of grains and grain boundaries

Reduction of dielectric loss for CCTO ceramics is a prerequisite for their applications. Considering internal barrier layer capacitance effect, improving the capacitance and grain boundary resistance is an effective way to reduce dielectric loss. Therefore, more conductive Ti³⁺ and Cu⁺ ions were introduced to grains by adding carbon to ceramic bodies, improving the permittivity of CCTO ceramics. Annealing was performed to increase the grain boundary resistance. The dielectric loss of the CCTO ceramics thus prepared, which maintain a giant permittivity, is significantly reduced. Specifically, the CCTO ceramic with carbon addition, which was sintered at 1080 °C for 8 h and air annealed at 950 °C for 2 h, exhibits a giant permittivity of about 2.50(5)×10⁴ and a low dielectric loss of less than 0.050(2) from below 20 Hz to 50 kHz at room temperature. Meanwhile, its dielectric loss at 1–10 kHz is less than 0.050(2) from below room temperature to about 100 °C.     

Microstructural evolution and dielectric properties of SiO2-doped CaCu3Ti4O12 ceramics

The abnormal grain growth (AGG) behavior of undoped and SiO₂-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics were investigated. With the addition of 2 wt.% SiO₂, the AGG-triggering temperature decreased from 1100 to 1060 °C, and the temperature for obtaining a uniform and coarse microstructure decreased from 1140 to 1100 °C. The lowering of the AGG temperature by SiO₂ addition was attributed to the formation of a CuO-SiO₂-rich intergranular phase at lower temperature. The apparent dielectric permittivity of coarse SiO₂-doped CCTO ceramics was ∼10 times higher than that of fine SiO₂-doped CCTO ceramics at the frequency of 10³–10⁵ Hz. The doping of SiO₂ to CCTO ceramics provides an efficient route of improving the dielectric properties via grain coarsening. The correlation between the microstructure and apparent permittivity suggests the presence of a barrier layer near the grain boundary.     

Enhanced electrical and photoluminescence properties of BiSbO4-doped CaCu3Ti4O12 ceramics by modifying grain boundary response

CaCu₃Ti₄O₁₂-xwt%BiSbO₄ ceramics (CCTO-xwt%BSO, x = 0, 1, 2, 3) were prepared by solid-state reaction method. The microstructure, dielectric properties, varistor properties, photoluminescence properties of CCTO-xwt%BSO ceramics were studied in this work. Results showed that all samples formed CaCu₃Ti₄O₁₂ (CCTO) single phase. Doping BiSbO₄ (BSO) restrained the abnormal grain growth and increased the grain boundary density of ceramics. The introduction of BSO led to the increase of the grain boundary resistance, reducing the dielectric loss and enhancing the temperature stability of dielectric properties. The nonlinear electrical characteristics are enhanced with proper concentration of BSO. And the improved varistor performance with breakdown electric field of ～3.98–34.6 and nonlinear coefficient of ～1.49–2.96 are obtained for CCTO-xwt%BSO samples. In addition, the photoluminescent emission of the samples is enhanced with the addition of appropriate equivalent BSO, showing the potential applications in novel devices with photoluminescent/electrical multifunctional properties.     

Improved dielectric,nonlinear and magnetic properties of cobalt-doped CaCu3Ti4O12 ceramics

The dielectric properties and voltage–current nonlinearity of the pure and various cobalt-doped CaCu₃Ti₄O₁₂ (Co-doped CCTO) prepared by solid-state reactions were investigated. The improved dielectric properties in the Co-doped CCTO, with a dielectric constant $\text{ε'}$ ≈7.4?×?10⁴ and dielectric loss $\text{tan}\text{δ}$?≈?0.034, were observed in the sample with a Co doping of 5% (CCTO05) at room temperature and 1?kHz. The related multi-relaxations, RII (?20 to 40?°C) and RIII (100–150?°C), were demonstrated to be a Debye-like relaxation and a Maxwell–Wagner relaxation related to oxygen vacancies. The low dielectric loss of CCTO05 was associated with the high grain boundary resistance and the increase in cation vacancies. The improved nonlinear electrical properties (CCTO05, with nonlinear coefficients $\text{α}$?≈?5.22 and breakdown electric field ${\text{E}}_{\text{b}}$?≈?300.46?V/cm) and the ferromagnetism in Co-doped CCTO were also discussed.     

Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

High permittivity and low dielectric loss of the (Ca0.9Sr0.1)1-xLa2x/3Cu3Ti4O12 ceramics

In this work, we have systematically studied the effects of La³⁺/Sr²⁺ dopants on the crystal structure, microstructure, dielectric response and electrical properties of (Ca_0.9Sr_0.1)_1-xLa_2x/3Cu₃Ti₄O₁₂ (x = 0, 0.025, 0.05 and 0.075) ceramics. XRD results show that the lattice parameter increases with the increase in the La³⁺ content. SEM micrographs illustrate that a small amount added of La³⁺ can reduce the grain size of CCTO during sintering. With increasing La³⁺ content, the grains grow larger. Dielectric measurements indicated that all doped samples synthesized by the solid-state reaction exhibit giant dielectric constants ε'>10⁴ over a large frequency range (10 Hz to 1 MHz) and at any temperature below 600 K. In particular, the ceramic with x = 0.05 exhibits a colossal dielectric permittivity ～5.49 × 10⁴; which increases by about 50% compared to that of the undoped ceramic. In addition, the doped ceramic also presents a low dielectric loss ～ 0.08 at 20 °C and 0.6 kHz. The giant dielectric properties of these samples can be explained by the (IBLC) model.     

Nonlinear I–V electrical behaviour of doped CaCu3Ti4O12 ceramics

In this work a comparative study of undoped CaCu₃Ti₄O₁₂ (CCTO) and doped with Fe³⁺(CCTOF) and Nb⁵⁺(CCTON) ceramics, was aimed to modify the electronic transport. XRD patterns, FE-SEM microstructural analysis, impedance spectroscopy and I–V response curves were afforded to correlate the microstructure with the nonlinear I–V behaviour. The appearance of nonlinear behaviour in doped CCTO samples has been correlated with the ceramic microstructure that consists in n-type semiconductor grains, surrounded by a grain boundary phase based on CuO. The presence of this secondary grain boundary phase is the responsible of the assisted liquid phase sintering in CCTO ceramics. Doped samples showed cleaner grain boundaries than CCTO and nonlinearity in the I–V response.     

Low-temperature sintering of Al2O3 ceramics doped with 4CuO-TiO2-2Nb2O5 composite oxide sintering aid

Dense alumina ceramics doped with 5 wt% 4CuO-TiO₂-2Nb₂O₅ composite sintering aids were obtained at low sintering temperatures of 950∼975 °C. The ceramic sintered at optimal condition shows good microwave dielectric properties (ε_r = 12.7, Q × f = 7400 GHz), high thermal conductivity (18.4 W/m K) and high bending strength (320 MPa). TEM and EDS analysis revealed that amorphous Cu-Ti-Nb-O interfacial films with nanometer thickness formed at the grain boundaries, which could provide paths of mass transportation for densification. Al³⁺ ions may be involved in mass transportation through substitution by Ti³⁺ and Ti⁴⁺ ions near the grain boundary during the sintering process. The accumulation of copper ions at the trigeminal grain boundary was observed. The migration and reaction of copper ions in grain boundaries may also play an important role in promoting mass transportation and low-temperature densification of alumina ceramics.     

Enhancement of giant dielectric response in Ga-doped CaCu3Ti4O12 ceramics

The influences of Ga³⁺ doping ions on the microstructure, dielectric and electrical properties of CaCu₃Ti₄O₁₂ ceramics were investigated systematically. Addition of Ga³⁺ ions can cause a great increase in the mean grain size of CaCu₃Ti₄O₁₂ ceramics. This is ascribed to the ability of Ga³⁺ doping to enhance grain boundary mobility. Doping CaCu₃Ti₄O₁₂ with 0.25 mol% of Ga³⁺ caused a large increase in its dielectric constant from 5439 to 31,331. The loss tangent decreased from 0.153 to 0.044. The giant dielectric response and dielectric relaxation behavior can be well described by the internal barrier layer capacitor model based on Maxwell?Wagner polarization at grain boundaries. The nonlinear coefficient, breakdown field, and electrostatic potential barrier at grain boundaries decreased with increasing Ga³⁺ content. Our results demonstrated the importance of ceramic microstructure and electrical responses of grain and grain boundaries in controlling the giant dielectric response and dielectric relaxation behavior of CaCu₃Ti₄O₁₂ ceramics.     

Direct and hybrid microwave solid state synthesis of CaCu3Ti4O12 ceramic: Microstructures and dielectric properties

CaCu₃Ti₄O₁₂ (CCTO) electroceramic possesses unusual giant dielectric permittivity up to ε?=?10⁴ at low frequency range and room temperature. CCTO dielectric properties strongly depend on its microstructure therefore it is essential to pay attention to the processing techniques which impact grain size and microstructure. In this work, direct and hybrid microwave solid state synthesis was specifically designed and used for the synthesis of CCTO. The microwave process was also compared to the conventional process which involves usual infrared heating. The structural (XRD) and microstructural (SEM) characterizations indicate that microwave synthesis is particularly efficient to get rapidly pure CCTO powder. The fully automated 915?MHz single-mode microwave cavity used for hybrid synthesis allows a perfect control of the temperature distribution and heating rate. Therefore hybrid microwave synthesis leads to a fine, mono-disperse and practically pure CCTO powder in the range of 300 – 500?nm. The advantages of the hybrid microwave heating method are discussed and compared to the conventional and direct microwave heating processes. From the powders synthesized by the different routes, dense compacts were sintered in air at 1050?°C in a conventional furnace. Microstructural characterizations reveal abnormal grain growth during sintering which levels dielectric properties. All exhibit a giant dielectric constant ε?>?10³ at room temperature which decreases drastically to ε?=?90 at 10?K. Those properties are discussed according to the well-established Internal Barrier Layer Capacitor (IBLC) model.     

Control of grain boundary in alumina doped CCTO showing colossal permittivity by core-shell approach

Grain boundaries of CaCu₃Ti₄O₁₂ (CCTO) materials have been shown to play leading role in colossal permittivity. Core-shell design is an attractive approach to make colossal dielectric capacitors by controlling the grain boundaries. Core-shell grains of CCTO surrounded by Al₂O₃ shell were synthesized by ultrasonic sol-gel reaction from alumina alkoxide precursor. The influence of alumina shell by comparison with bare CCTO grains was studied. Particularly, microstructure, dielectric and electric effects on sintered ceramics are reported. The average grain size and the density are increased compared to undoped CCTO leading to an improvement of permittivity from 58,000 to 81,000 at 1?kHz. Furthermore a decrease of dielectric loss is found in a frequency range of 10²–10³?Hz. Moreover, the activation energy of grain boundaries is increased from 0.55 to 0.73?eV and the electrical properties such as breakdown voltage, non-linear coefficient and resistivity are improved with the aim of making industrial capacitors.     

Glass additive in barium titanate ceramics and its influence on electrical breakdown strength in relation with energy storage properties

Glass additive was employed to improve the microstructures and energy storage properties of barium titanate ceramics using liquid phase sintering technology. Microstructural observation indicated that the average grain size reduced obviously with increasing glass concentration. Also, the dielectric constant decreased and the dielectric breakdown strength increased as glass concentration increased. The increase in the breakdown strength with decreasing grain size was consistent with the well-known relationship for the mechanical failure. The activation energies of bulk grain and grain boundary as well as their differences were calculated using measured impedance values. Good inverse dependence of the dielectric breakdown strength on the difference between activation energies of bulk grain and grain boundary was obtained for the glass-added BaTiO₃ ceramics. It was also found that the energy storage density of the ceramics increased gradually with increasing glass concentration. Possible effect of the interfacial polarization in degrading the energy storage property was discussed.     

Multi-phase coexistence and temperature-stable dielectric properties in BaTiO3/ZnO composite ceramics

BaTiO₃:100xZnO composite ceramics with different ZnO particle sizes were prepared by using a conventional solid-state method. Phase constitution, microstructure and dielectric properties of BaTiO₃:100xZnO composite ceramics are investigated. Compared to micrometer scaled ZnO particles, nanometer scaled ZnO particles tend to agglomerate at lower ZnO contents in the BaTiO₃:100xZnO composite ceramics. The introduction of ZnO in BaTiO₃ leads to the reduction of grain size, decrease of the tetragonality and shift of phase transition temperature. The optimum composition is BaTiO₃ with 20 wt. % nanometer scaled ZnO particles, which has stable permittivity and low dielectric loss from -100 to 160 °C. The stable dielectric properties are proposed to be beneficiated from the stress induced multi-phase coexistence.     

Structural and dielectric properties,and nonlinear electrical response of the CaCu3-xZnxTi4O12 ceramics: Experimental and computational studies

CaCu_3-xZn_xTi₄O₁₂ ceramics (x = 0, 0.05, 0.10) were successfully prepared by a conventional solid-state reaction method. Their structural and dielectric properties, and nonlinear electrical response were systematically inspected. The X-ray diffraction results indicated that single-phase CaCu₃Ti₄O₁₂ (JCPDS no. 75–2188) was obtained in all sintered ceramics. Changes in the lattice parameter are well-matched with the computational result, indicating an occupation of Zn²⁺ doping ions at Cu²⁺ sites. The overall tendency shows that the average grain size decreases when x increases. Due to a decrease in overall grain size, the dielectric permittivity of CaCu_3-xZn_xTi₄O₁₂ decreases expressively. Despite a decrease in the dielectric permittivity, it remains at a high level in the doped ceramics (~3,406–11,441). Besides retention in high dielectric permittivity, the dielectric loss tangent of x = 0.05 and 0.10 (~0.074–0.076) is lower than that of x = 0 (~0.227). A reduction in the dielectric loss tangent in the CaCu_3-xZn_xTi₄O₁₂ ceramics is closely associated with the enhanced grain boundary response. Increases in grain boundary resistance, breakdown electric field, and conduction activation energy of grain boundary as a result of Zn²⁺ substitution are shown to play a crucial role in improved grain boundary response. Furthermore, the XPS analysis shows the existence of Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺, indicating charge compensation due to the loss of oxygen lattice. Based on all results of this work, enhanced dielectric properties of the Zn-doped CCTO can be explained using the internal barrier layer capacitor model.     

Effect of grain size on the energy storage properties of (Ba0.4Sr0.6)TiO3 paraelectric ceramics

(Ba_0.4Sr_0.6)TiO₃ (BST) ceramics with various grain sizes (0.5–5.6 μm) were prepared by conventional solid state reaction methods. The effect of grain size on the energy storage properties of BST ceramics (T_c ≈ −65 °C) was investigated. With decreasing grain sizes, a clear tendency toward the diffuse phase transition was observed and the dielectric nonlinearity was reduced gradually, which can be explained by the Devonshire's phenomenological theory (from the viewpoint of intrinsic polarization). Based on the multi-polarization mechanism model, the relationship between the polarization behavior of polar nano-regions (the extrinsic nonlinear polarization mechanisms) and grain size was studied. The variation of the grain boundary density was thought to play an important role on the improvement of dielectric breakdown strength, account for the enhanced energy density, which was confirmed by the complex impedance spectroscopy analysis based on a double-layered dielectric model.     

Dielectric properties of conventional and microwave sintered Lanthanum doped CaCu3Ti4O12 ceramics for high-frequency applications

The colossal dielectric response of La-doped CaCu₃Ti₄O₁₂ ceramics has been probed at room temperature for a frequency of 1Hz–20 MHz. In this work, the La-doped (CaCu₃Ti₄O₁₂)_x samples for x = 0.1, 0.2, and 0.3 have been sintered at 1100 °C using two different heating modes. SEM and EDS analysis investigated the microstructural chrysalis, grain size distribution, and the inhibitions of Cu-rich phase segregation into grain boundaries by the effect of La³⁺. The presence of main cubic single-phase of CCTO and the diminutive Bragg peak shift due to ion size effect of La³⁺ and Ca²⁺ have been identified by XRD for both conventional (CS) and microwave sintered (MWS) samples. XPS study revealed the effect of La³⁺ on the binding energies of Cu and Ti in CCTO. The dielectric properties namely dielectric constant (?), tan δ, and dielectric relaxation peaks were measured using BDS in which CS and MWS La-doped samples demonstrated (?) ～ >10⁴ and ～ >10³ along with low tan δ for x ≥ 0.1 at medium and high frequency (10⁴–10⁷Hz) than pure CCTO.