Electrophoretic Deposition and Characterization of Micrometer-Scale BaTiO3 Based X7R Dielectric Thick Films

Uniform and relatively dense BaTiO₃ thick films of 1–5 μm were prepared by an electrophoretic deposition process using submicrometer BaTiO₃ powders (mean particle size: ∼0.2 μm). Two different BaTiO₃ powders and solvent media were used to investigate the film quality and thickness control. The surface charge mechanism of BaTiO₃ particles was explained according to the observed results. The microstructures were examined by means of SEM. The experimental results show that the thickness could be controlled independently of suspension concentration by keeping a constant applied voltage and a constant current drop in a given suspension. BaTiO₃ thick films have good insulation resistance and dielectric properties such as a dielectric constant and a dissipation factor that are compatible with the data from conventional tape-cast BaTiO₃ thin layers.     

Effects of a Conducting LaNiO3 Thick Film as a Buffer Layer of a Pb(Zr,Ti)O3 Film on Titanium Substrates

A conducting 8-μm-thick LaNiO₃ (LNO) film was deposited on a Ti substrate by aerosol deposition for use as a diffusion barrier between a lead zirconate titanate (PZT) and a Ti substrate during postannealing. The deposited 20-μm-thick PZT films were annealed at 800°C. The PZT film deposited without LNO was cracked and partially detached from the substrate after postannealing, presumably due to a severe reaction with the Ti substrate, while no significant reactions were observed when the LNO buffer layer was used. The remnant polarization and relative dielectric constant of the 20-μm-thick annealed PZT films deposited on the LNO-buffered Ti substrate were 43 μC/cm² and 1010, respectively.     

Dielectric Properties and Microstructure of Nb-Co Codoped BaTiO3–(Bi0.5Na0.5)TiO3 Ceramics

X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and an impedance analyzer were used to examine the Nb–Co codoping effects on the densification, crystalline phase, microstructure development, and dielectric–temperature characteristics of BaTiO₃–(Bi_0.5Na_0.5)TiO₃ ceramics. The results indicate that the Curie temperature shifted to a higher temperature (above 140°C) by adding BNT. The dielectric constant–temperature (ɛ– T ) curve broadened at the Curie temperature due to the small grain size (0.3–0.4 μm). A core-shell structure was developed, which is helpful to flatten the ɛ– T curve of BaTiO₃ ceramics at high temperatures.     

Synthesis of Lead Zirconate Titanate Stannate Antiferroelectric Thick Films by Sol-Gel Processing

The effects of different sintering procedures on the preparation of antiferroelectric thick films and the structure–property relations in these films were studied. An acetic acid-based sol–gel processing with multistep annealing and suitable lead oxide overcoat layers was developed to fabricate both niobium-doped and lanthanum-doped lead zirconate titanate stannate antiferroelectric thick films. The 5-μm-thick Pb_0.99Nb_0.02(Zr_0.85Sn_0.13Ti_0.02)_0.98O₃ films demonstrate typical square hysteresis loops with a maximum polarization of 40 μC/cm², zero remanent polarization, an antiferroelectric-to-ferroelectric phase transition field of 153 kV/cm, and a ferroelectric-to-antiferroelectric phase transition field of 97 kV/cm. The dielectric constant and dielectric loss are 283 and 1.7%, respectively. The 5-μm-thick Pb_0.97La_0.02(Zr_0.65Sn_0.31Ti_0.04)O₃ films display typical slanted hysteresis loops with very small hysteresis, a maximum polarization of 35.0 μC/cm², and zero remanent polarization. The dielectric constant and dielectric loss are 434 and 2.0%, respectively.     

Investigation on the Microstructure and Dielectric Properties of BaTiO3–Nb2O5–Fe2O3 Materials Doped with La2O3

The influence of La₂O₃ doped on the microstructure and dielectric properties, including the phase structure, temperature dependence of permittivity, and the hysteresis loop of BaTiO₃–Nb₂O₅–Fe₂O₃ (BTNF) materials has been investigated in X-ray diffraction, SEM, and LCR analyzer, respectively. Experiments revealed that incorporation of proper content of La₂O₃ basically soluted in the lattice of BaTiO₃ and can control the grain-growth, reduce the dielectric loss of the BTNF materials. The development of microstructure promoted by the additives can result in the improvement of the dielectric constant. When the doping concentration of La₂O₃ was 3.846 wt%, the relative dielectric constant of the sample sintered at 1280°C only for 2 h could reach 4308, and improve the dielectric-temperature characteristics markedly. As a result, a novel Y5P can be achieved in the BTNF ceramics, which is very promising for practical use in Y5P multilayer ceramic capacitors.     

In-Plane Polarized 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 Thin Films

Ferroelectric 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) thin films were deposited on ZrO₂/SiO₂/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm²) than for through-the-thickness polarized PMN-PT thin films (10–12 μC/cm²) deposited on Pt/Ti/Si substrates. For a finger spacing of 20 μm, the piezoelectric voltage sensitivity of in–plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.     

Crystal Chemistry and Dielectric Properties in the Systems BaTiO3-UO2 and BaTiO3-BaUO3

Polycrystalline barium titanate fired in nitrogen at 1300° to 1400°C accommodates up to 3 mole % UO₂ in solid solution; its structure is then cubic at room temperature. With BaUO₃ additions the structure becomes disordered and quasi-cubic. In air, about 1 mole % UO₂ goes into solid solution in BaTiO₃ but the structure remains tetragonal. Diffraction peaks of a new phase, possibly a ternary oxide of barium, uranium, and titanium, appear in patterns of specimens containing more than 2 mole % UO₂. The dielectric constant of BaTiO₃ ceramics fired in air, steam, or oxygen increases with up to about 0.5 mole % UO₂ but declines rapidly above this level. The dielectric constant of BaUO₃ is about two orders of magnitude lower than that of BaTiO₃, and additions of BaUO₃ invariably lower the dielectric constant of BaTiO₃.     

High-Temperature Dielectrics in the BiScO3–BaTiO3–(K1/2Bi1/2)TiO3 Ternary System

Perovskite solid solution in the (1− x )[0.4BiScO₃–0.6BaTiO₃]+ x (K_1/2Bi_1/2)TiO₃ [BSBT–KBT x ] system was synthesized using conventional sintering and hot-isostatic pressing. Dielectric properties of BSBT ceramics with different dopant levels of KBT were characterized as a function of temperature and frequency for potential use of high-temperature capacitors. The BSBT ceramics with KBT exhibited high dielectric permittivities (ɛ_r) (>1700 at RT) and low dielectric loss over the temperature range from 100° to 300°C, with flat temperature coefficients of permittivity (TCɛs). In addition, BSBT ceramics with increasing KBT were observed to possess dielectric relaxation characteristics at temperatures (>RT) as observed in lead-based relaxors. Furthermore, high energy densities, being on the order of 4.0 J/cm³ at 220 kV/cm was observed for the BSBT–KBT20 ceramics from the electric-field polarization behavior.     

Preparation, Characterization, and Properties of Dy-Doped Small-Grained BaTiO3 Ceramics

The effects of Dy doping and sintering parameters on the properties of BaTiO₃ ceramics were studied. The average grain size decreases with increasing Dy content and is controlled at ∼1.5 μ m by 0.8 at.% Dy. The Curie temperature change, associated with ≤1.2 at.% Dy, is <3°C. The dielectric constant is ∼2600 for specimens doped with 0.8 at.% Dy, calcined at 1200°C, and sintered at 1450°C. The dielectric constant variation with ambient temperature is much less than that of conventional BaTiO₃ ceramics. Lattice constant c decreases with increasing Dy concentration whereas a increases slightly. The effects of grain size on dielectric constant, lattice parameters, and linear thermal expansion coefficient are more pronounced than the chemical effects of Dy doping in the ferroelectric state, whereas in the paraelectric state, these characteristics are almost independent of grain size as well as Dy concentration. The decrease in the frequency of occurrence of 90° twins with decreasing grain size implies that internal stress, which develops when BaTiO₃ ceramics are cooled below T_c , strongly influences the effects of grain size.     

Dielectric and Ferroelectric Properties of Ceramics in the Pb(Zn 1/3Nb2/3)O3-BaTiO3-PbTiO3 System

The use of Pb(Zn_1/3Nb_2/3)O₃ ceramics is restricted by the formation of a pyrochlore phase detrimental to both dielectric and piezoelectric properties. Recently it has been shown that a 6 mol% addition of BaTiO₃ to PZN suppresses the formation of pyrochlore phase. Phase relations and dielectric properties of ceramics in the PZN-BT-PT system are reported here. Compositions with the perovskite structure, having high dielectric constant and low temperature coefficient of capacitance, have been identified.     

Molten-Salt Synthesis of Ba1–xPbxTiO3 in the System BaTiO3–PbCl2

Ba_{1– x} Pb _x TiO₃ powder with a fixed composition was prepared by the reaction of BaTiO₃ powders with molten PbCl₂at various PbCl₂/BaTiO₃ molar ratios at 600° and 800°C in a nitrogen atmosphere. When 0.1 μm powder was used, the reaction was finished when x = 0.9. Two phases of BaTiO₃and a solid solution of Ba_{1– x} Pb _x TiO₃ coexisted, but the final phase gave a solid solution of Ba_{1– x} Pb _x TiO₃ at 800°C. When 0.5 μm powder was used, the two phases coexisted in the products at 600°C at PbCl₂/BaTiO₃= 1.0. A sintered compact of Ba_{1– x} Pb _x TiO₃ powders solid solution was prepared by hot isostatic pressing, and its dielectric constant was measured in the temperature range 20°–550°C.     

Influence of SiO2 Addition on the Dielectric Properties and Microstructure of (Ba0.96Ca0.04)(Ti0.85Zr0.15)O3 Ceramics

In this study, the effect of SiO₂ doping on the sintering behavior, microstructure, and dielectric properties of BaTiO₃-based ceramics was investigated. Silica was added to (Ba_0.96Ca_0.04)(Ti_0.85Zr_0.15)O₃ (BCTZ) powder prepared using the solid-state method. SiO₂-doped BCTZ ceramics with a high density and a uniform grain size were obtained and sintered at 1220°C in a reducing atmosphere. A second phase (BaTiSiO₅) existed in samples when SiO₂ was added in excess of 1%. The amount of the second phases was observed to increase as the number of SiO₂ additives increased. It was found that BCTZ ceramics sintered with SiO₂ are helpful in reducing the sintering temperature for a typical thick film and MLCC applications. However, there were disadvantageous effects on the dielectric properties with mere addition of SiO₂ addition (3% and 5%) due to higher formation of BaTiSiO₅. Doping with a small amount of silica can improve the sintering and dielectric properties of BCTZ ceramics. In addition, to understand the effect of the BaTiSiO₅ phase on the dielectric properties of BCTZ ceramics, the BaTiSiO₅ composition was synthesized from individual BaCO₃, TiO₂, and SiO₂ powders using conventional solid-state methods. X-ray diffraction results show the presence of mainly the crystalline phase, BaTiSiO₅, in the sintered ceramics.     

Electrical and Pyroelectric Properties of Highly (001)-Oriented (Pb0.76Ca0.24)TiO3 Thin Films Grown by a Sol–Gel Process

Highly (001)-oriented (Pb_0.76Ca_0.24)TiO₃ (PCT) thin films were grown on Pt/Ti/SiO₂/Si substrates using a sol–gel process. The PCT film with a highly (001) orientation showed well-saturated hysteresis loops at an applied field of 800 kV/cm, with remanent polarization ( P _r) and coercive electric field ( E _c) values of 23.6 μC/cm² and 225 kV/cm, respectively. At 100 kHz, the dielectric constant and dielectric loss values of these films were 117 and 0.010, respectively. The leakage-current density of the PCT film was 6.15 × 10⁻⁸A/cm² at 5 V. The pyroelectric coefficient ( p ) of the PCT film was measured using a dynamic technique. At room temperature, the p values and figures-of-merit ( F _D) of the PCT film were 185 μC/m²K and 1.79 × 10⁻⁵ Pa^−0.5, respectively.     

Phase Transition and Physical Characteristics of Nanograined BaTiO3 Ceramics Synthesized from Surface-Coated Nanopowders

Nanograined BaTiO₃ ceramics prepared from 40-nm-size BaTiO₃ nanopowders exhibited the cubic as well as the tetragonal phase, while nanograined BaTiO₃ ceramics prepared from BaTiO₃ nanopowders coated with Mn had only the tetragonal phase. The dielectric constant of the latter was 10 times larger than that of the former; the latter exhibited PTCR behavior with a resistivity jump ratio of about 5.0 × 10⁴. These physical properties of the BaTiO₃ ceramics appeared to be significantly affected by the strain near grain boundaries; such strain resulted in a phase transition from the cubic to the tetragonal phase in the nanograined BaTiO₃ ceramics, even though the grain size was about 40 nm.     

Effects of Ba6Ti17O40 on the Dielectric Properties of Nb-Doped BaTiO3 Ceramics

The dielectric properties, including the DC breakdown strength, of 1 mol% Nb⁵⁺-doped BaTiO₃ ceramics with different quantities of excess TiO₂ have been investigated. The breakdown strength was found to decrease with increasing TiO₂ content, but could not be readily explained by relative density and grain size effects. The decrease in the breakdown strength from a stoichiometric BaTiO₃ composition to samples with excess TiO₂ is believed to be due to the field enhancement effect (up to a factor of 1.40) at the BaTiO₃ matrix because of the presence of a Ba₆Ti₁₇O₄₀ second phase. The thermal expansion coefficient mismatch between the BaTiO₃ matrix phase and the Ba₆Ti₁₇O₄₀ phase may also result in a low breakdown strength. The dielectric properties of the pure Ba₆Ti₁₇O₄₀ phase were also investigated and are reported herein.     

Effect of the ac Field Level on the Aging of the Dielectric Response in Polycrystalline BaTiO3

BaTiO₃ ceramics with grain sizes from 0.6 to 60 μm and relative densities of 89% to 92% were prepared by hot forging and conventional sintering from very pure-oxalate-derived powder. The aging of both the dielectric constant and the dielectric loss was examined at weak and strong fields with respect to grain size and frequency. It was concluded that the main aging mechanism is the aging of hysteretic domain wall motion for coarse-grained ceramics. At grain size of less than 1 μm, the lack of frequency and E _AC dependence, along with a lower aging rate, suggests that domain motions or hysteretic domain wall motions are restricted in finegrained ceramic BaTiO₃ and contribute little to the aging.     

Ferroelectric and Piezoelectric Properties of Na1−xBaxNb1−xTixO3 Ceramics

Piezoelectric ceramics Na_{1− x} Ba _x Nb_{1− x} Ti _x O₃ with low BaTiO₃ concentrations x have been prepared by the solid-state reaction method, and their ferroelectric and piezoelectric properties have been studied. The ceramics are classic ferroelectrics when x ≤0.10, and the ferroelectric–paraelectric phase transition becomes diffusive when x ≥0.15. A low doping level of BaTiO₃ changes the NaNbO₃ ceramics from antiferroelectric to ferroelectric. With the increase in BaTiO₃ doping level, the Curie temperature of ceramics decreases linearly and the remnant polarization and coercive field also decrease, while their dielectric constant increases. Na_0.9Ba_0.1Nb_0.9Ti_0.1O₃ ceramics show the largest piezoelectric constant d ₃₃ (147 pC/N) and good sinterability, suggesting that it is a good candidate for lead-free piezoelectric ceramics.     

High Tc in Electrospun BaTiO3 Nanofibers

BaTiO₃ nanofibers were prepared by electrospinning. The morphology of synthesized BaTiO₃ nanofibers was investigated under different heat treatment conditions. The phase transformations in BaTiO₃ nanofibers were monitored using Raman spectroscopy. It has been found that the Curie temperature of BaTiO₃ nanofibers increased to 220°C, which is notably higher than the bulk BaTiO₃ ceramics.     

Synthesis of Micron-Scale Platelet BaTiO3

Micron-scale platelet barium titanate was synthesized using a twostep molten salt and topochemical technique. Plate-like BaBi₄Ti₄O₁₅ was first synthesized as a precursor by molten salt synthesis. Then, Bi³⁺ in the precursor was replaced by Ba²⁺ and formed perovskite-structure BaTiO₃ through a topochemical reaction. The BaTiO₃ single crystals have an average size of 5–10 μm and a thickness of 0.5 μm. The purpose of this article is to control the particle shape with desired structure. High aspect ratio BaTiO₃ platelets are suitable templates to obtain textured ceramics (especially Pb(Mg_1/3Nb_2/3)O₃–32.5PbTiO₃) by the templated grain growth process.     

Influence of Grain Growth on Dielectric Properties of Nb-Doped BaTiO3

Effects of grain size and grain growth in Nb-doped BaTiO₃ on temperature and frequency dependencies of the dielectric constant were investigated. When 0.65 μm powder is sintered to an average grain size of 1 μm, two dielectric constant peaks indicate the presence of Nb-free BaTiO₃ and of Nb-containing material. Single peaks are observed above room temperature after additional grain growth or when 0.07 μm powder is sintered to an average grain size of 1 μm. The Curie point of pure BaTiO₃ with 1 μm grains is 4 to 6°C lower than that of material with grains >10 μm. Thermodynamically, this behavior is accounted for by a phase inversion stress ∼ the room-temperature stress.