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1.
Junggyu Nam Yoonmook Kang Dongho Lee JungYup Yang Young‐Su Kim Chan B. Mo Sungchan Park Dongseop Kim 《Progress in Photovoltaics: Research and Applications》2016,24(2):175-182
We have achieved 17.9% efficiency in a 30 × 30 cm2 Cu(In,Ga)(Se,S)2 solar cell sub‐module prepared by selenization and sulfurization processes with a Cd‐free buffer. The development of an absorber layer, transparent conducting oxide window layer, and module design was the key focus. This permitted 1.8% higher efficiency than our last experimental result. The quantity and the injection time of the sodium were controlled, resulting in higher open circuit voltage (Voc) and short circuit current (Jsc). In order to increase Jsc, we changed the thickness of the window layer. Boron‐doped zinc oxide was optimized for higher transmittance without reducing the fill factor. The uniformity of each layer was improved, and patterns were optimized for each module. Therefore, Voc, Jsc, and FF could be theoretically improved on the reported results of, respectively, 20 mV, 2 mA/cm2, and 1.4%. The module's efficiency was measured at the Korea Test Laboratory to compare with the data obtained in‐house. Various analyses were performed, including secondary ion mass spectroscopy, photoluminescence, quantum efficiency, solar simulator, and UV–vis spectrometry, to measure the cell's depth profile, carrier lifetime, external quantum efficiency, module efficiency, and transmittance, respectively. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
2.
目前CdS材料的制备方法有很多种,但是最常用的是化学水浴法。本文研究了浓度、反应溶液pH值、温度、沉积时间对CdS缓冲层薄膜的影响,对CIGS薄膜太阳能电池缓冲层CdS薄膜的制备方法进行了论述。 相似文献
3.
Heterojunction and sandwich architectures are two new-type structures with great potential for solar cells. Specifically, the heterojunction structure possesses the advantages of efficient charge separation but suffers from band offset and large interface recombination; the sandwich configuration is favorable for transferring carriers but requires complex fabrication process. Here, we have designed two thin-film polycrystalline solar cells with novel structures:sandwich CIGS and heterojunction perovskite, referring to the advantages of the architectures of sandwich perovskite (standard) and heterojunction CIGS (standard) solar cells, respectively. A reliable simulation software wxAMPS is used to investigate their inherent characteristics with variation of the thickness and doping density of absorber layer. The results reveal that sandwich CIGS solar cell is able to exhibit an optimized efficiency of 20.7%, which is much higher than the standard heterojunction CIGS structure (18.48%). The heterojunction perovskite solar cell can be more efficient employing thick and doped perovskite films (16.9%) than these typically utilizing thin and weak-doping/intrinsic perovskite films (9.6%). This concept of structure modulation proves to be useful and can be applicable for other solar cells. 相似文献
4.
Cu(In,Ga)Se2 (CIGS) absorber layer is grown on Mo-coated soda-lime glass (SLG) substrates using co-evaporation deposition technique. The growth characteristics of the CIGS films deposited through a three-stage process are examined by interrupting the deposition along the reaction pathway. In the three-stage process, the absorber layer undergoes several phase transformations with Cu content. The γ-(In,Ga)2Se3 layer is formed first and is then converted to α-Cu(In,Ga)Se2 via β-Cu(In,Ga)3Se5. When α-Cu(In,Ga)Se2 stoichiometry is reached, Cu2−xSe segregation at the surface and at grain boundaries begins to occur. The Cu2−xSe improved the densification and grain growth of the absorber layer. Then, as the absorber layer reverts to substoichiometric composition, the Cu2−xSe phase disappears and the depleted server Cu near the surface instead. This paper reports several types of defects found in absorber layers that act as non-radiative recombination centers, such as impurity phases (Cu2−xSe and Cu(In,Ga)3Se5), deep point defects (InCu), grain boundaries, and voids. The highest efficiency at 10.97% was achieved when the bulk [Cu]/([In]+[Ga]) ratio was 0.98 at the third stage of the process. This result is attributed to the low-concentration deep-level defects that act as recombination centers and to the denser structure with larger grain size. 相似文献
5.
低成本、高效率的薄膜太阳电池是未来光伏产业发展的重要方向之一。主要介绍了目前备受关注的薄膜太阳电池,包括硅基薄膜太阳电池、铜铟镓硒与铜锌锡硫薄膜太阳电池,及砷化镓薄膜太阳电池等,简述了它们的各自特点、研究现状、主要技术路线和产业化发展等情况。最后展望了薄膜太阳电池未来的发展趋势。 相似文献
6.
M. B. Zellner R. W. Birkmire E. Eser W. N. Shafarman J. G. Chen 《Progress in Photovoltaics: Research and Applications》2003,11(8):543-548
We have determined the activation energies of sodium diffusion from the soda‐lime glass substrate through the Mo back‐contact layer, as well as through copper indium gallium diselenide (CIGS) deposited on the Mo back‐contact layer of CIGS thin‐film solar cells. The activation energies were determined by X‐ray photoelectron spectroscopy (XPS) to measure surface sodium concentrations before and after thermally induced diffusion. The activation energies were found to be similar for the diffusion of Na through the Mo/glass and CIGS/Mo/glass thin films, approximately 8·6 and 9·6 kcal/mol, respectively. Furthermore, the sodium diffusion was found to occur by annealing in an environment of 1·0×10−5 Torr of air, oxygen, or water vapor, but not in vacuum of less than 1×10−8 Torr. In addition, the diffusion of Na was found to occur faster in the presence of oxygen than in water under identical annealing conditions. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
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Seungkuk Kuk Zhen Wang Hyeonggeun Yu Chang‐Yong Nam Jeung‐hyun Jeong David Hwang 《Progress in Photovoltaics: Research and Applications》2020,28(2):135-147
Building‐integrated photovoltaic (BIPV), especially in a semitransparent and/or see‐through configuration, has attracted significant attention because of the extended surfaces available for the photovoltaic (PV) installation including roofs, facades, and windows. In this study, we examine the P4 scribing process for fabricating see‐through cells on a new Cu (In,Ga)Se2 (CIGS) architecture with indium tin oxide (ITO) bottom contact, using a nanosecond laser beam of 532‐nm wavelength illuminated from glass substrate side. Through parametric studies with the variations of laser beam spot size and pulse energy, we have identified that enlarged laser beam with the pulse energy near scribing threshold could suppress both damage in ITO and electrical shunt induced by molten CIGS. Scanning electron microscopy (SEM) and energy‐dispersive X‐ray spectroscopy (EDS) analyses unveil that the molten CIGS mediated shunt mechanism, wetting the scribing edge and forming Cu‐rich metallic phase. The P4 scribing process operated near threshold fluence of enlarged laser beam clearly suppressed unwanted shunt, also minimizing the fluctuation in the desired film removal trend. Thermal analysis supports that enlarged laser beam enables scribing at reduced CIGS‐ITO interface temperature assisted by buckling‐based film delamination mechanism and also suppresses CIGS melting at scribing edge and its neighborhood. See‐through cells fabricated for the areal fraction of approximately 15% using the optimal laser scribing parameters exhibited the short circuit current reduction rate of 16.8% enabled by the low shunt resistance reduction rate of approximately 8%. Further studies are underway to elucidate precise shunt‐related scribing mechanism on the basis of the cross‐sectional analyses and time‐resolved diagnostics and to fabricate the module level see‐through PV architectures. 相似文献
9.
吴文烛;杨增周;刘祖刚;荆嘉伟;韩然然;韩晋琛;夏梽杰;赵虹;姚鑫 《光电子技术》2024,44(1):6-12
采用热注入法在200 ℃下合成CuInGaS纳米颗粒,保持投料中Cu、In、Ga原料的质量不变,通过调控活性剂油胺、溶剂二苄醚以及配位剂1‑辛硫醇的体积分别为80 ml、4 ml和15 ml,精准地控制Cu、In、Ga、S元素的组分。制备得到的纳米颗粒材料的原子比为1∶0.688∶0.299∶2.03,即CuInGaS,其纳米颗粒的尺寸为5~20 nm。利用有机溶剂极性性质,对纳米颗粒进行清洗提纯,得到的纳米颗粒不仅可以稳定的分散在甲苯溶剂中,且在环境更加友好的对二甲苯、环己烷等有机溶剂中也有良好的分散性。以此纳米颗粒为基础,配置了不同溶剂的墨水,制备了铜铟镓硫硒（CIGSSe）吸收层薄膜及太阳能电池。 相似文献
10.
Cu(In,Ga)Se2 (CIGS) thin films were deposited by electron beam evaporation of ball-milled powders containing various amounts of gallium. The effects of the gallium concentration in the Cu(In,Ga)Se2 on the structure, surface morphology and optical properties of the films were investigated using X-ray diffraction, energy-dispersive X-ray analysis, atomic force microscopy and optical spectroscopy. All of the films, which were deposited at 450 °C, were polycrystalline and exhibited a chalcopyrite structure with a (112) preferred orientation. The optical constants of the films were calculated. The grain size, the roughness and the band gap increased with increasing amounts of gallium in the films. A glass/TCO/CdS/CIGS/Au solar cell with 12.87% efficiency was prepared directly from the powdered material. 相似文献
11.
Cu(In,Ga)Se2材料成分对其电池性能的影响 总被引：3，自引：0，他引：3
利用三步共蒸发法制备铜铟硒薄膜太阳电池中的吸收层CIGS薄膜,采用多种测试手段,研究其成分比例与薄膜的电阻率、载流子浓度、表面粗糙度之间的关系电阻率为1e2～1e3Ω·cm之间,是Cu、III族元素、Se配比较为合适的区域载流子浓度在1e15～1e16cm-3范围内,薄膜表面粗糙度是随着Cu/(Ga+In)比呈下降趋势,Cu越多,表面越光滑,当Cu/(Ga+In)比超过1.25以后,变化趋势逐渐减弱. 当Cu/(Ga+In)比在1.0附近时,粗糙度处于30～60nm之间. 在上述范围内,研制出转换效率为12.1%的CIGS薄膜太阳电池. 相似文献
12.
Ju‐Heon Yoon Won‐Mok Kim Jong‐Keuk Park Young‐Joon Baik Tae‐Yeon Seong Jeung‐hyun Jeong 《Progress in Photovoltaics: Research and Applications》2014,22(1):69-76
The surface microstructures of molybdenum (Mo) back contacts were shown to play a crucial role in the preferred orientations of Cu(In,Ga)Se2 (CIGS) films. The lower surface density of Mo tends to drive the growth of CIGS films toward favoring a (220)/(204) orientation, attributed to the higher likelihood of a MoSe2 reaction. This work showed that the presence of a very thin layer on a Mo bilayer facilitated the tuning of the CIGS grain orientations from strongly favoring (112) to strongly favoring (220)/(204) without sacrificing the electrode conductivity. The efficiency of Na‐doped CIGS cells was increased toward decreasing Mo surface density, that is, increasing (220)/(204) CIGS orientation. Although slight changes in Na doping found between different Mo surface properties could contribute in part, the comparison with Na‐reduced CIGS cells showed that it was more likely due to the (220)/(204) orientation‐related enhancement of CdS/CIGS junction characteristics, which were possibly attributed to a favorable CdS reaction and a reduction in the defect metastabilities. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
13.
Pengcheng Jia Liang Qin Di Zhao Yang Tang Bo Song Junhan Guo Xiaomeng Li Ling Li Qiuhong Cui Yufeng Hu Zhidong Lou Feng Teng Yanbing Hou 《Advanced functional materials》2021,31(49):2107125
The performance of perovskite solar cells is greatly affected by the crystallization of the perovskite active layer. Perovskite crystal grains should neatly arrange and penetrate the entire active layer for an ideal perovskite crystallization. These kinds of crystallized perovskite films exhibit fewer defects and longer carrier lifetime, which is beneficial to enhance the performance of perovskite solar cells. Here, by testing the residual charge of perovskite solar cells with different crystallization conditions, it is demonstrated that the residual charge exists widely at the grain boundary, which is parallel to the device, and the residual charge is related to the performance of the perovskite solar cells. Single crystal grains neatly arranged and penetrate the entire active layer can generate less residual charge and improve device performance of the perovskite solar cells. The results also show that the long decay time of open-circuit voltage comes from the detrapping of trapped carriers. The residual charge testing technology provides a new idea for the investigation of carrier trap and detrap characteristics in photovoltaic devices. 相似文献
14.
Ahmed A. Abouelsaood Moustafa Y. Ghannam Jef Poortmans 《Progress in Photovoltaics: Research and Applications》2013,21(2):209-216
The reported experimental evidence for the quasi‐Fermi level split in quantum‐dot intermediate‐band solar cells is carefully examined. It is shown that the separation of the quasi‐Fermi level of the intermediate band from that of the conduction band is not consistent with the experimental results of the quantum efficiency and the luminescence intensity of the InAs/GaAs cells. The fact that the electroluminescence spectrum is too wide, extending much further than we expect on the basis of the measured quantum efficiency in the direction of increasing photon energies, indicates that the temperature of the optically active regions of the cell during the electroluminescence measurements is considerably higher than room temperature. The best agreement with the experimental results is achieved with a temperature of about 525 K. This temperature rise is probably a result of the heating effect of the relatively high forward current used in the luminescence experiments. It is argued that the lack of a quasi‐Fermi level split in this case is associated with the absence of a gap in the emission/absorption spectrum of sub‐bandgap photons. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
15.
大面积ZnO:Al窗口层的制备与研究 总被引：2，自引：2，他引：0
采用磁控溅射方法,制备了大面积(300mm×300mm)ZnO:Al薄膜作为CIGS太阳电池的窗口层。设计以电阻率和透过率测试值的标准差乘积作为衡量大面积低阻ZnO窗口层的均匀性标准,确定4mm/s作为衬底与靶材最合适的相对行走速度,并进一步研究工作气压和溅射功率对ZnO:Al薄膜结构、电学特性和光学特性的影响,实现在400～1 200nm波长范围内平均透过率大于85%,电阻率ρ约1.0×10-3Ω.cm。试验结果表明,改善的工艺条件能得到大面积内厚度均匀、光电特性良好的低阻ZnO窗口层。 相似文献
16.
《Progress in Photovoltaics: Research and Applications》2018,26(9):730-739
In this work, we used K‐rich glass substrates to provide potassium during the coevaporation of Cu(In,Ga)Se2 (CIGS) absorber layers. Subsequently, we applied a postdeposition treatment (PDT) using KF or RbF to some of the grown absorbers. It was found that the presence of K during the growth of the CIGS layer led to cell efficiencies beyond 17%, and the addition of a PDT pushed it beyond 18%. The major finding of this work is the observation of discontinuous 100‐ to 200‐nm‐deep Cu‐depleted patches in the vicinity of the CdS buffer layer, correlated with the presence of K during the growth of the absorber layer. The PDT had no influence on the formation of these patches. A second finding concerns the composition of the Cu‐depleted areas, where an anticorrelation between Cu and both In and K was measured using scanning transmission electron microscopy. Furthermore, a steeper Ga/(In+Ga) ratio gradient was measured for the absorbers grown with the presence of K, suggesting that K hinders the group III element interdiffusion. Finally, no Cd in‐diffusion to the CIGS layer could be detected. This indicates that if CdCu substitution occurs, either their concentration is below our instrumental detection limit or its presence is contained within the first 6 nm from the CdS/CIGS interface. 相似文献
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Tugba Selcen Navruz Muzeyyen Saritas 《Progress in Photovoltaics: Research and Applications》2014,22(5):593-602
In this study, the optimum material parameters capable of providing high efficiencies close to the detailed balance limit are determined for intermediate band solar cells. A diffusion model, including the overlap effect between absorption coefficients, is used during the calculations for the first time. It is obtained that to achieve high efficiencies close to the detailed balance limit; the effective density of state value, NCV, should be higher than 1017 cm−3 and the carrier mobility should be larger than 200 cm2/Vs, where the light concentration should not be higher than nearly 1000 sun. Besides, it is found out that the optimum intermediate band level and the base width depend on the mobility and effective density of state values. So they need to be optimized according to the material parameters. The effect of overlap between absorption coefficients on the performance of intermediate band solar cells is also investigated. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
19.
《Progress in Photovoltaics: Research and Applications》2018,26(10):846-858
Hydrogen‐doped In2O3 (IOH) films are used as a transparent back contact in bifacial Cu(In,Ga)Se2 (CIGS) solar cells. The effect of the IOH thickness and the impact of the sodium incorporation technique on the photovoltaic parameters are studied, and clear correlations are observed. It is shown that a loss in short circuit current density (JSC) is the major limitation at back side illumination. The introduction of a thin Al2O3 layer on top of the IOH significantly increases the collection efficiency (ϕ(x)) for electrons generated close to the back contact. In this way, the JSC loss can be mitigated to only ~ 25% as compared with front side illumination. The Al2O3 film potentially reduces the interface defect density or, alternatively, creates a field effect passivation. In addition, it prevents the excessive formation of Ga2O3 at the CIGS/IOH interface, which is found otherwise when a NaF layer is added before absorber deposition. Consequently, detrimental redistributions in Ga and In close to the back contact can be avoided. Finally, a bifacial CIGS solar cell with an efficiency (η) of η = 11.0% at front and η = 6.0% at back side illumination could be processed. The large potential for further improvements is discussed. 相似文献