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《Progress in Photovoltaics: Research and Applications》2017,25(2):161-174
The radiation response of In0.5Ga0.5P, GaAs, In0.2Ga0.8As, and In0.3Ga0.7As single‐junction solar cells, whose materials are also used as component subcells of inverted metamorphic triple‐junction (IMM3J) solar cells, was investigated. All four types of cells were prepared using a simple device layout and irradiated with high‐energy electrons and protons. The essential solar cell characteristics, namely, light‐illuminated current–voltage (LIV), dark current–voltage (DIV), external quantum efficiency (EQE), and two‐dimensional photoluminescence (2D‐PL) imaging were obtained before and after irradiation, and the corresponding changes due to the irradiations were compared and analyzed. The degradation of the cell output parameters by electrons and protons were plotted as a function of the displacement damage dose. It was found that the radiation resistance of the two InGaAs cells is approximately equivalent to that of the InGaP and GaAs cells from the materials standpoint, which is a result of different initial material qualities. However, the InGaAs cells show relatively low radiation resistance to electrons especially for the short‐circuit current (I sc). By comparing the degradation of I sc and EQE, data, It was confirmed that the greater decrease of minority‐carrier diffusion length in InGaAs compared with InGaP and GaAs causes severe degradation in the photo‐generation current of the InGaAs bottom subcells in IMM3J structures. Additionally, it was found that the InGaP and two InGaAs cells exhibited equivalent radiation resistance of V oc, but radiation response mechanisms of V oc are thought to be different. Further analytical studies are necessary to interpret the observed radiation response of the cells. © 2016 The Authors. Progress in Photovoltaics: Research and Applications published by John Wiley & Sons Ltd. 相似文献
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本文研究了不同沉积条件下的未掺杂a-Si:H特性,测量了材料的光致变化、红外吸收谱、光暗电导率、次带吸收谱等。研究表明,电池的稳定性除与弱健、微空洞等缺陷有关外,还与未掺杂a-Si:H中的高硅氢键的含量直接相关。 相似文献
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Antoine Descoeudres Jrg Horzel Bertrand Paviet‐Salomon Laurie‐Lou Senaud Gabriel Christmann Jonas Geissbühler Patrick Wyss Nicolas Badel Jan‐Willem Schüttauf Jun Zhao Christophe Alleb Antonin Faes Sylvain Nicolay Christophe Ballif Matthieu Despeisse 《Progress in Photovoltaics: Research and Applications》2020,28(6):569-577
Providing state‐of‐the‐art surface passivation and the required carrier selectivity for both contacts, hydrogenated amorphous silicon thin films are the key components of silicon heterojunction (SHJ) solar cells. After intensive optimization of these layers for standard front and back contacted (FBC) n‐type cells, high surface passivation levels were achieved on cell precursors, demonstrated by minority carrier lifetimes exceeding 18 ms on float‐zone (FZ) and 11 ms on Czochralski (Cz) c‐Si wafers. The application of these very same layers on cheaper and commercially available Cz p‐type wafers resulted in similar passivation quality, with lifetimes above 10 ms as well. Large‐area industrial bifacial FBC SHJ cells processed on wafers taken along the full length of a high‐resistivity Cz p‐type ingot showed efficiencies in the 22.5% to 23% range, significantly higher than previously reported results on such substrates and on par with their n‐type counterparts. Best efficiencies on large‐area monofacial devices (>220 cm2) are 23.6% on Cz p‐type and 24.4% on Cz n‐type, similar to certified results obtained on lab‐scale cells (4 cm2), 23.76% on FZ p‐type and 24.21% on FZ n‐type. Notably, no specific adaptation of the reference n‐type cell process was necessary to achieve these results on p‐type material. Additionally, a 25% certified efficiency has been obtained on medium‐sized (25 cm2) interdigitated back‐contacted SHJ cells, featuring the same passivation layers developed for FBC devices. These results illustrate the versatility of the SHJ technology for various high‐efficiency screen‐printed solar cell configurations and show possible ways to improve its competitiveness on the global photovoltaic market. 相似文献
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硼掺杂对a-Si薄膜电导率及太阳电池效率的影响 总被引：2，自引：0，他引：2
对等离子增强化学气相沉积技术(PECVD)低温制备的非晶硅(a Si)薄膜的电导率随B掺杂浓度的变化规律进行了研究。结果表明:当B2H6/SiH4由0.6%增加到0.8%时,a Si薄膜的暗电导率由10-5(Ω·cm)-1急剧增加到10-1(Ω·cm)-1;进一步增加B2H6/SiH4时,暗电导率增加缓慢;当B2H6/SiH4大于1.0%时,暗电导率急剧下降。对B2H6/SiH4为1.0%及1.2%的P层材料制备的太阳电池的研究结果表明:采用B2H6/SiH4为1.2%的光电转换效率优于1.0%。 相似文献
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低温高速率沉积非晶硅薄膜及太阳电池 总被引：1，自引：0，他引：1
采用射频等离子体增强化学气相沉积(RF-PECVD)技术,保持沉积温度在125℃制备非晶硅薄膜材料及太阳电池。在85 Pa的低压下以及400～667 Pa的高压下,改变Si H4浓度和辉光功率等沉积参数,对本征a-Si材料的性能进行优化。结果表明,在高压下,合适的Si H4浓度和压力功率比可以使a-Si材料的光电特性得到优化,并且薄膜的沉积速率得到一定程度的提高。采用低压低速和高压高速的沉积条件,在125℃的低温条件下制备出效率为6.7%的单结a-Si电池,高压下本征层a-Si材料的沉积速率由0.06～0.08 nm/s提高到0.17～0.19 nm/s。 相似文献
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Hydrogenated amorphous Si(a‐Si:H) quintuple‐junction solar cells, which consist of a‐SiOx:H/a‐SiOx:H/a‐Si:H/a‐SiOx:H/a‐SiOx:H, were fabricated by plasma CVD method. The total thickness was 0.6‐0.8 μm. Irradiation intensity (Pin) dependence of the open circuit voltage (Voc) of quintuple‐junction solar cells was measured. The decreasing amount ΔVoc (1/10) of the open‐circuit voltage when the irradiation intensity became 1/10 was 62mV/cell. Voc drops rapidly from around the irradiation intensity of 1mW/cm2 (approximately 1,000 lux). This large Voc reduction is due to leakage current. Then, we discussed the origin of the leakage current, and, finally, by improving the leakage current, a very high open‐circuit voltage Voc of 3.5 V was demonstrated under LED light illumination. Furthermore, we theoretically analyzed Voc as a function of the irradiation intensity, including effects of the leakage current and the film quality of i‐a‐Si(O):H. It was found from the simulation results that it is necessary to increase the shunt resistance Rsh and to lower the defect density of i‐a‐Si(O):H in order to obtain a sufficient Voc‐Pin characteristics for IoT devices application under low illuminance. 相似文献
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In this work, buffer layers with various conditions are inserted at an n/i interface in hydrogenated amorphous silicon semitransparent solar cells. It is observed that the performance of a solar cell strongly depends on the arrangement and thickness of the buffer layer. When arranging buffer layers with various bandgaps in ascending order from the intrinsic layer to the n layer, a relatively high open circuit voltage and short circuit current are observed. In addition, the fill factors are improved, owing to an enhanced shunt resistance under every instance of the introduced n/i buffer layers. Among the various conditions during the arrangement of the buffer layers, a reverse V shape of the energy bandgap is found to be the most effective for high efficiency, which also exhibits intermediate transmittance among all samples. This is an inspiring result, enabling an independent control of the conversion efficiency and transmittance. 相似文献
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Natasha Gruginskie Federica Cappelluti Gerard J. Bauhuis Peter Mulder Erik J. Haverkamp Elias Vlieg John J. Schermer 《Progress in Photovoltaics: Research and Applications》2020,28(4):266-278
The effects of electron irradiation on the performance of GaAs solar cells with a range of architectures is studied. Solar cells with shallow and deep junction designs processed on the native wafer as well as into a thin‐film were irradiated by 1‐MeV electrons with fluence up to 1×1015 e−/cm2. The degradation of the cell performance due to irradiation was studied experimentally and theoretically using model simulations, and a coherent set of minority carriers' lifetime damage constants was derived. The solar cell performance degradation primarily depends on the junction depth and the thickness of the active layers, whereas the material damage shows to be insensitive to the cell architecture and fabrication steps. The modeling study has pointed out that besides the reduction of carriers lifetime, the electron irradiation strongly affects the quality of hetero‐interfaces, an effect scarcely addressed in the literature. It is demonstrated that linear increase with the electron fluence of the surface recombination velocity at the front and rear hetero‐interfaces of the solar cell accurately describes the degradation of the spectral response and of the dark current characteristic upon irradiation. A shallow junction solar cell processed into a thin‐film device has the lowest sensitivity to electron radiation, showing an efficiency at the end of life equivalent to 82% of the beginning‐of‐life efficiency. 相似文献
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N. J. Mohr A. Meijer M. A. J. Huijbregts L. Reijnders 《Progress in Photovoltaics: Research and Applications》2013,21(4):802-815
This paper presents an environmental life cycle assessment of a roof‐integrated flexible solar cell laminate with tandem solar cells composed of amorphous silicon/nanocrystalline silicon (a‐Si/nc‐Si). The a‐Si/nc‐Si cells are considered to have 10% conversion efficiency. Their expected service life is 20 years. The production scale considered is 100 MWp per year. A comparison of the a‐Si/nc‐Si photovoltaic (PV) system with the roof‐mounted multicrystalline silicon (multi‐Si) PV system is also presented. For both PV systems, application in the Netherlands with an annual insolation of 1000 kWh/m2 is considered. We found that the overall damage scores of the a‐Si/nc‐Si PV system and the multi‐Si PV system are 0.012 and 0.010 Ecopoints/kWh, respectively. For both PV systems, the impacts due to climate change, human toxicity, particulate matter formation, and fossil resources depletion together contribute to 96% of the overall damage scores. Each of both PV systems has a cumulative primary energy demand of 1.4 MJ/kWh. The cumulative primary energy demand of the a‐Si/nc‐Si PV system has an uncertainty of up to 41%. For the a‐Si/nc‐Si PV system, an energy payback time of 2.3 years is derived. The construction for roof integration, the silicon deposition, and etching are found to be the largest contributors to the primary energy demand of the a‐Si/nc‐Si PV system, whereas encapsulation and the construction for roof integration are the largest contributors to its impact on climate change. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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Martin Schaper Jan Schmidt Heiko Plagwitz Rolf Brendel 《Progress in Photovoltaics: Research and Applications》2005,13(5):381-386
We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is deposited at 225°C by plasma‐enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a‐Si:H‐passivated rear. The base contacts are formed by COSIMA (contact formation to a‐Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a‐Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 ±0.2 mΩ cm2 on low‐resistivity (0.5 Ω cm) p‐type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one‐sun standard testing conditions for a 4 cm2 large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
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T. Zimmermann A. J. Flikweert T. Merdzhanova J. Woerdenweber A. Gordijn U. Rau F. Stahr K. Dybek J. W. Bartha 《Progress in Photovoltaics: Research and Applications》2014,22(2):198-207
Hydrogenated amorphous silicon (a‐Si:H) is conventionally deposited using static plasma‐enhanced chemical vapor deposition (PECVD) processes. In this work, a very high frequency (VHF) dynamic deposition technique is presented, on the basis of linear plasma sources. This configuration deploys a simple reactor design and enables continuous deposition processes, leading to a high throughput. Hence, this technique may facilitate the use of flexible substrates. As a result, the production costs of thin‐film silicon solar cells could be reduced significantly. We found a suitable regime for the homogeneous deposition of a‐Si:H layers for growth rates from 0.35–1.1 nm/s. The single layer properties as well as the performance of corresponding a‐Si:H solar cells are investigated and compared with a state‐of‐the‐art radio frequency (RF) PECVD regime. By analyzing the Fourier transform infrared spectroscopy spectra of single layers, we found an increasing hydrogen concentration with deposition rate for both techniques, which is in agreement with earlier findings. At a given growth rate, the hydrogen concentration was at the same level for intrinsic layers deposited by RF‐PECVD and VHF‐PECVD. The initial efficiency of the corresponding p–i–n solar cells ranged from 9.6% at a deposition rate of 0.2 nm/s (RF regime) to 8.9% at 1.1 nm/s (VHF regime). After degradation, the solar cell efficiency stabilized between 7.8% and 5.9%, respectively. The solar cells incorporating intrinsic layers grown dynamically using the linear plasma sources and very high frequencies showed a higher stabilized efficiency and lower degradation loss than solar cells with intrinsic layers grown statically by RF‐PECVD at the same deposition rate. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Lsc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Lsc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Lsc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池. 相似文献
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a-Si太阳电池陷光结构的新模型及其优化 总被引：3，自引：3，他引：3
我们在分析陷光结构的表面形貌后,对陷光结构提出一个新的模型,并用它计算和分析析射率、形貌和膜厚等参数对陷光效果的影响。通过计算,我们找出这些参数的最佳值,并依此对陷光结构进行优化,以提高非晶硅太阳电池的效率和稳定性。 相似文献
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运用2×1.7MV串列静电加速器提供的质子束,对MOCVD方法制备的GaInP/GaAs/Ge三结电池进行低能质子辐射效应研究.选质子能量为0.28,0.62和2.80MeV,辐照注量为1×1010,1×1011,1×1012和1×1013cm-2.对电池的辐射效应用I-V特性和光谱响应测试进行分析.研究结果表明:随辐照注量的增加,太阳电池性能参数Lsc,Voc和Pmax的衰降幅度均增大;但随质子辐照能量的增加,Lsc,Voc和Pmax的衰降幅度均减小.实验中0.28MeV质子辐照引起电池Lsc,Voc,Pmax衰降最显著,三结电池中光谱响应衰降最明显的是中间GaAs电池. 相似文献
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Y. Aya W. Shinohara M. Matsumoto K. Murata T. Kunii M. Nakagawa A. Terakawa M. Tanaka 《Progress in Photovoltaics: Research and Applications》2012,20(2):166-172
Methods to achieve a good balance among a high conversion efficiency, a large panel size and a high deposition rate of µc‐Si:H for mass production are shown here. For this purpose, an original technology called the Localized Plasma Confinement CVD (LPC‐CVD) method is investigated. Using know‐how from this method, an amorphous silicon/microcrystalline silicon (µc‐Si:H) solar panel, whose size is Gen. 5.5 (1100 mm × 1400 mm) and whose µc‐Si:H deposition rate is 2.4 nm/s, with a conversion efficiency of 11.1% (Voc = 161.7 V, Isc = 1.46 A, FF = 72.4%, Pmax = 171 W) is obtained. It is also experimentally confirmed that the value is equivalent to 10.0% of stabilized efficiency. Various reliability tests that conform to IEC standards have been performed for solar modules. It has been shown that the solar modules adapt to the major categories of IEC standards. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
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光陷阱在晶硅太阳电池中的应用 总被引：5，自引：0，他引：5
为了提高太阳能电池的转换效率和降低成本，采用光陷阱是一种很有效的方法，如多孔硅可使入射光的反射率减小到5％左右。对实验室和国外几种实用性很强的光陷阱结构，如金字塔绒面、多孔硅、压花法、溶胶-凝胶等及其制作方法进行了综述。 相似文献