铟柱高度快速测量方法研究

在红外探测器铟柱蒸发的工艺试验中,有需要测量大量铟柱高度的情况,因此对铟柱高度测量方法进行了研究.手动逐点测量铟柱高度方式的结果较为准确,但是测量速度比较慢,消耗时间比较多.快速自动测量的方法使用了显微镜的扫描功能,并利用图像识别技术来自动识别铟柱,能够一次获取所有铟柱的高度,所以测量速度很快.详细介绍了这两种方法的操...     

基于调制度比的光学三维测量轮廓术

复杂物体的快速三维测量是光学三维轮廓术的难题之一.提出了基于调制度比的光学三维测量新方法,设计了基于共轴光路的测量系统.理论分析表明,在几何光学近似下,物体表面一点调制度比的对数与该点的高度成正比,因此可以用调制度比作为物体高度的载体.通过标定建立高度与调制度比的查找表,测量时利用CCD在两个不同的位置分别获取物体表面的光栅信息,利用傅里叶变换方法计算相应物点的调制度并计算比值,根据调制度比值通过查找表得到相应物点的高度信息.该方法采用共轴光路,有效避免了阴影和遮挡问题;采用调制度比作为物体高度测量的载体,只需要两幅光栅图就可以得到物体的高度信息,具有测量快速的优点.对高为79.51 mm的台阶测量的相对误差为0.86%,实验结果证实了该方法和系统的有效性.     

测量油缸中油品温度和水层高度的仪表

目前,测量油缸中的油品温度,都是用采样瓶将油品从缸内采出,再用玻璃温度计去测量;测量油缸下部水层高度,是用检水膏涂在有刻度的铜尺上,把铜尺垂直放入缸底,水就和检水膏起作用,使红色的检水膏变白,其变白的高度,即相当于水层高度.上述两种测量方法既不精确,又不方便.最近我们研制了一种测量     

1 GHz以上辐射场强测量方法的探讨

给出了1 GHz以上辐射场强测量的方法(包括对测量天线的基本要求).对具有不同辐射特性(单波瓣和多波瓣)的受试设备天线高度扫描问题进行了定性分析.对测量方法中天线高度扫描存在的问题给出了可能的解决方法.     

双电容测量液位方法

液位测量在工业生产中有着重要的意义.研究了双电容液位测量方法,分析了双电容液位的测量原理和计算公式.运用电容在液体中会因为液位高低的变化而产生双电容值的改变,通过测量电容能够得到液位高度.为了验证理论分析的正确性,做了一系列测量实验,液位高度在75-165mm范围内的平均测量误差为2.75mm,结果表明该方法能够较为准确地测量出液位.     

光子并合作用对激光雷达测量臭氧的影响分析

在激光雷达测量平流层下部臭氧时,我们发现光电倍增管接收到较低高度的强信号后,回波信号会产生光子并合现象。数据处理分析表明,光子并合现象对平流层下部臭氧测量的影响很大.为避免产生光子并合现象的产生,可以利用在接收光路上加装中性衰减片、提高光电倍增管开始工作的高度和降低光电倍增管增益等措施来分段测量,提高臭氧测量的精度.     

一种基于检测伽马射线的料位计设计

为了实现煤仓内煤料高度的测量,设计了一种基于STM32F103 RBT6的料位计测量控制系统,该系统能够利用煤料中的放射性物质,通过光电效应将放射性信号转化为电流信号,并且通过对电流信号进行采样、转化.最终计算出煤仓内料位的高度.具有功耗低、寿命长、精度高等优点.     

GaN基激光器的特性

GaN基激光器具有广泛的应用.如何获得平整腔面是蓝宝石衬底上制作GaN激光器的困难之一.通过对解理面的分析和不同衬底厚度时腔面形貌的比较,发现减薄衬底可以有效降低腔面粗糙度.当外延片厚度减薄至50μm时,获得近似镜面的腔面.激光器的测量证实了腔面的改善可以降低阈值电流,增加斜率效率.利用二维光波导模型计算了脊形高度对限制因子和远场分布的影响.计算结果说明,增加脊形高度可以增加限制因子,降低远场纵横比.通过测量具有不同脊形高度的器件,证实了脊形高度增加,阈值电流降低、远场纵横比减小.     

基于遗传算法的锥光全息测量系统标定技术

针对锥光全息式非接触测量的高度信息恢复问题,对光强-高度标定方法的不足进行了分析,提出了一种基于相对变化量的相位-高度标定方法,即在理论和实验结合下,确定相位和被测距离的相对变化量的数学关系,并采用具有全局优化能力的遗传算法对确定的关系式中的各个参数进行优化.实验结果表明,该方法大大降低了光源波动对图像处理的影响,同时,简化了运算,确保了测量的速度和准确性.此外,用这种方法建立的标定数据模型还解决了相对平缓表面测量的限制.     

傅里叶变换轮廓术中一种普适的计算公式和系统标定方法

提出一种新的普适计算公式和系统标定方法,推导了傅里叶变换轮廓术(FTP)中高度-相位映射关系.由于新的普适计箅公式对系统的几何结构没有严格要求,测量系统的搭建变得容易,投影系统和成像系统可以任意放置以便获得更好的条纹信息,因而操作灵活.提出的标定方法能够准确得到普适条件下系统参数的组合,避免了对系统各个参数的直接测量,提高了测量系统的可操作性及测晕速度.实验中采用本方法对最大高度为28.00 mm的物体进行测量,相对误差仅为0.97%.测量结果证明,提出的方法能够准确恢复物体的三维形貌且具有较好的普适性.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.