Zn离子注入增强TiO2纳米管光电效应

用阳极氧化法在钛金属表面制备出致密有序的TiO_2纳米管阵列,用MEVVA源离子束技术在其上进行金属Zn离子的掺杂注入。用电镜观察离子束轰击对TiO_2纳米管阵列结构的影响。研究了掺杂前后TiO_2纳米管阵列在紫外光和可见光区域的光电效应。用全势线性缀加平面波(FP-LAPW)法讨论了TiO_2纳米管对可见光响应的机理。     

Ti与Ag离子顺次注入SiO2合成TiO2纳米结构及其光催化活性

通过Ti离子单注入或与Ag离子顺次注入、结合后续的N₂气氛下热退火处理,在SiO₂基体的浅表面层合成TiO₂纳米结构,详细研究了该纳米结构的形貌、结构、光学特性及其光催化性能。结果表明：Ti离子单注入或与Ag离子顺次注入并经热处理后均能在SiO₂中产生TiO₂纳米颗粒,700℃退火后形成的纳米颗粒主要为锐钛矿相,继续升高退火温度,TiO₂纳米颗粒逐渐转变为金红石相。Ag的附加注入不仅能促进TiO₂纳米颗粒的生长,而且可以降低其形成的温度及光学带隙。此外,光催化实验结果还显示,Ag的附加注入能够提高所合成的TiO₂纳米颗粒光催化活性。结合光致发光和X射线光电子能谱测试结果分析并给出了附加Ag离子注入导致所合成的TiO₂ 纳米结构光催化活性提升的可能机理。     

SiO_2纳米干凝胶的合成和表征

以水玻璃和盐酸为原料 ,通过添加表面活性剂的方法制备SiO2 纳米干凝胶 ,并对其制备条件进行了研究 ;用BET ,DTA TGA ,IR ,XRD ,TEM等手段对样品的结构和性能进行了表征。结果表明 ,合成SiO2 纳米干凝胶的最佳工艺条件为 :水玻璃质量浓度 ,4 0 g/L ;盐酸浓度 ,5mol/L ;表面活性剂质量浓度 ,50 g/L ;老化时间 ,1h ;煅烧温度 ,6 0 0℃。该样品的比表面积可达 998m2 / g ,对锆的静态吸附容量为 0 344mmol/ g     

SiO_2纳米干凝胶的合成和表征

以水玻璃和盐酸为原料,通过添加表面活性剂的方法制备SiO2纳米干凝胶,并对其制备条件进行了研究;用BET,DTA－TGA,IR,XRD,TEM等手段对样品的结构和性能进行了表征。结果表明,合成SiO2纳米干凝胶的最佳工艺条件为：水玻璃质量浓度,40g/L;盐酸浓度,5mol/L;表面活性剂质量浓度,50g/L;老化时间,1h;煅烧温度,600℃。该样品的比表面积可达998m^2/g,对锆的静态吸附容量为0．344mmol/g。     

电子束辐照与离子注入技术在光催化用TiO2膜表面改性中的应用

用电子束辐照法在TiO2薄膜表面沉积Ag,Pt纳米颗粒,或对TiO2薄膜进行V^＋或Cr^＋离子注入,以提高TiO2薄膜的光催化效率,并将其响应波段拓展到可见光区域。通过X射线衍射（XRD）、扫描电镜（SEM）、X射线能谱仪（EDS）技术研究了改性TiO2薄膜。结果表明,电子束辐照可在TiO2薄膜表面形成纳米颗粒,注入离子分布于整个TiO2薄膜。光催化实验表明,这两种改性技术都能有效地提高TiO2薄膜在可见光下的光催化能力。     

X射线辐照合成金纳米颗粒及其原位表征

X射线辐照合成无机纳米粒子具有简单、清洁、高效等优点,是一种绿色合成方法.X射线技术,如X射线光电子能谱(XPS)、X射线吸收精细结构谱(XAFS)等,特别是同步辐射X射线技术的应用和发展,为人们探索纳米材料的结构信息提供了强大的工具.然而,利用X射线辐照合成金纳米颗粒及利用X射线技术原位探索金纳米颗粒的生长机理的综述...     

N2^＋、N^＋与Cu基底中α—Fe纳米颗粒相互作用的穆斯堡尔谱研究

利用穆斯堡尔方法研究了N2^ ,N^ 与Cu基底中α-Fe纳米颗粒相互碰撞和碰撞后的热动力学过程。实验结果表明,N2^ 与α-Fe纳米颗粒的相互作用存在着明显的非线性,即N2^ 与α-Fe纳米颗粒的碰撞截面,远大于N^ 与α-Fe纳米颗粒的碰撞截面。     

超临界二氧化碳流体中纳米颗粒热泳沉积计算研究

超临界二氧化碳中纳米颗粒的运动沉积问题是目前的国际前沿课题。纳米颗粒由于其粒径小、具有更高的相对表面能,其穿透性更强,对超临界系统装置可能有较大破坏性。选择不锈钢纳米颗粒、超临界二氧化碳作为具体对象,以1 m长的水平直管作为流动几何通道,运用Fluent软件采取控制单一变量法,对影响纳米颗粒热泳沉积的因素进行了计算分析。对于热泳沉积而言,流体与壁面温差是影响沉积率的最主要因素,呈正相关关系;来流速度、粒径、管径与沉积率呈负相关关系。     

自悬浮定向流法制备Ti纳米颗粒及结构表征

采用自悬浮定向流法制备钛纳米颗粒,并使用透射电镜、X射线衍射和X射线光电子能谱等方法,对钛纳米颗粒的形貌、粒度、结构及性能进行研究。结果表明：钛纳米颗粒呈球形,随着冷却气体Ar流速的增加,平均粒径逐渐减小,在流速为0.6、0.8和1.0 m³/h条件下,分别得到平均粒径为59、50和41 nm的钛纳米颗粒;在空气中,钛纳米颗粒极易氧化生成二氧化钛,同时能够与空气中的N₂和水蒸气发生反应,生成少量的氮化物及羟基基团。     

液态铅铋共晶合金中纳米颗粒的热泳运动研究

采用液体中的固体颗粒热泳理论,对铅铋共晶合金(LBE)中金属纳米颗粒的热泳现象进行研究。计算LBE中不同种类纳米颗粒的热泳速度,并观察不锈钢纳米颗粒在不同流体中的热泳速度。对LBE中不同种类纳米颗粒热泳速度的计算结果表明,LBE中纳米颗粒的热泳速度随着温度梯度的增加而增加,随粒径的减小而增加;不锈钢颗粒的热泳速度要比碳纳米管颗粒低两个量级,与铜纳米颗粒的热泳速度相近。对不锈钢纳米颗粒在不同流体中热泳速度的计算结果表明,不锈钢颗粒在LBE中的热泳速度要比在水和四氟乙烷中低1个量级,比在机油和乙基乙二醇中高2个量级。     

N-TiO2 nanoparticles embedded in silica prepared by Ti ion implantation and annealing in nitrogen

Room-temperature Ti ion implantation and subsequent thermal annealing in N₂ ambience have been used to fabricate the anatase and rutile structured N-doped TiO₂ particles embedded in the surface region of fused silica. The Stopping and Range of Ions in Matter (SRIM) code simulation indicates a Gaussian distribution of implanted Ti, peaked at ∼75 nm with a full width at half maximum of ∼80 nm. However, the transmission electron microscopy image shows a much shallower distribution to depth of ∼70 nm. Significant sputtering loss of silica substrates has occurred during implantation. Nanoparticles with size of 10-20 nm in diameter have formed after implantation. X-ray photoelectron spectroscopy indicates the coexistence of TiO₂ and metallic Ti in the as-implanted samples. Metallic Ti is oxidized to anatase TiO₂ after annealing at 600 °C, while rutile TiO₂ forms by phase transformation after annealing at 900 °C. At the same time, N-Ti-O, Ti-O-N and/or Ti-N-O linkages have formed in the lattice of TiO₂. A red shift of 0.34 eV in the absorption edge is obtained for N-doped anatase TiO₂ after annealing at 600 °C for 6 h. The absorbance increases in the ultraviolet and visible waveband.     

Synthesis and characterization of SnO2 nanoparticles embedded in silica by ion implantation

Tin dioxide nanoparticles embedded in silica matrix were fabricated by ion implantation combined with thermal oxidation. Silica substrate was implanted with a 150 keV Sn⁺ ions beam with a fluence of 1.0 × 10¹⁷ ions/cm². The sample was annealed for 1 h in a conventional furnace at a temperature of 800 °C under flowing O₂ gas. According to the structural characterization performed by X-ray diffraction and transmission electron microscopy techniques, metallic tetragonal tin nanoparticles with a volume average size of 12.8 nm were formed in the as-implanted sample. The annealing in oxidizing atmosphere promotes the total oxidation of the tin nanoparticles into tin dioxide nanoparticles with a preferential migration toward the surface of the matrix, where large and coalesced nanoparticles were observed, and a small diffusion toward the bulk, where smaller nanoparticles were found.     

Room temperature ferromagnetism of Co doped TiO2 using ion implantation and defect engineering

Ferromagnetic (FM) semiconductors obtained by doping ferromagnetic elements into a nonmagnetic semiconductor matrix are essential for the second generation of spintronics devices. In this study, we investigate Co doping behavior and subsequent magnetic properties in Co implanted and thermally annealed TiO₂. In TiO₂ single crystals, a decrease in the oxygen partial pressure during thermal annealing is found to enhance the Co substitutional fraction by increasing the concentration of oxygen vacancies. Magnetic properties determined from superconducting quantum interference device magnetometer (SQUID) measurements show that TiO₂ crystals with a large fraction of substitutional Co are ferromagnetic at room temperature. In addition to single crystals, the feasibility of Co doping via ion implantation is studied in sol–gel synthesized TiO₂ thin films. Results from grazing incidence X-ray diffraction (GIXRD) show that the implantation can produce Co doped TiO₂ thin films and that the Co incorporation into Ti lattice site accompanies the transition from rutile to anatase phase. These results show that ion beam synthesis is a useful tool for producing ferromagnetic TiO₂ with a high Curie temperature (T_C).     

Optical behaviour of Er doped rutile by ion implantation

Rutile single crystals were implanted at room temperature with fluences of 5 × 10¹⁵ Er⁺/cm² ions with 150 keV energy. Rutherford backscattering/channeling along the 0 0 1 axis reveals complete amorphization of the implanted region. Photoluminescence reveals the presence of an optical centre close to the intra-ionic emission of Er³⁺ in the as-implanted samples. After annealing at 800 °C in air no changes were observed in the aligned RBS spectrum. On the contrary, annealing in reducing atmosphere (vacuum) induces the epitaxy of the damage layer. These results are unexpected, since for implantations of other ions under the same conditions, epitaxial recrystallization of the damage region occurs at this temperature. On the other hand, photoluminescence studies show the presence of new Er-related optical centres with high thermal stability in the samples annealed under oxidizing conditions. Annealing at 1000 °C in vacuum leads to the complete recrystallization of the damaged region. At this temperature a large fraction of Er segregates to the surface.     

Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

Si/SiC multilayer systems for XUV reflection optics with a periodicity of 10-20 nm were produced by sequential deposition of Si and implantation of 1 keV ions. Only about 3% of the implanted carbon was transferred into the SiC, with a thin, 0.5-1 nm, buried SiC layer being formed. We investigated the effect of thermal annealing on further completion of the carbide layer. For the annealing we used a vacuum furnace, a rapid thermal annealing system in argon atmosphere, and a scanning e-beam, for different temperatures, heating rates, and annealing durations. Annealing to a temperature as low as 600 °C resulted in the formation of a 4.5 nm smooth, amorphous carbide layer in the carbon-implanted region. However, annealing at a higher temperature, 1000 °C, lead to the formation of a rough poly-crystalline carbide layer. The multilayers were characterized by grazing incidence X-ray reflectometry and cross section TEM.     

离子束混合形成氮化钛膜的摩擦和光学性能

用载能氮离子束轰击纯铁镀钛膜样品，成功地形成了金黄色氮化钛薄膜。结果表明：注入剂量为０．５×１０＾１７ Ｎ＾＋／ｃｍ＾２的混合样品表面颜色与纯金类似；氮离子束混合样品表面显微硬度及耐磨性都远优于纯铁基体，且随离子剂量的增加，混合样品的表面硬度和耐磨性也提高。     

离子注入α－Al_2O_3陶瓷材料的表面改性研究

研究了α－Ａｌ２Ｏ３单晶注入Ｎ＋后的力学性能变化。结果表明，注入剂量为１×１０１７Ｎ＋／ｃｍ２时，Ａｌ２Ｏ３的显微硬度提高了９２％；注入剂量为３×１０１７Ｎ＋／ｃｍ２时，在Ａｌ２Ｏ３表面形成非晶层，导致表面软化，显微硬度只是基体的５０％左右．离子注入在样品表面产生了高达￣１１５０ＭＰａ的压应力，材料的断裂韧性的改善与此有关，实验亦发现Ｎ＋离子注入后Ａｌ２Ｏ３的断裂韧性提高了９５％左右．ＳＥＭ分析同样证明Ｎ＋注入ａ－Ａｌ２Ｏ３后，其表面力学性能确实有所改善。     

Large third-order optical nonlinearity of silver colloids in silica glasses synthesized by ion implantation

Silver ion implantations in fused silica glasses have been made to synthesize silver nanocluster-glass composites and a combination of ‘Anti-Resonant Interferometric Nonlinear Spectroscopy (ARINS)’ and ‘Z-scan’ techniques has been employed for the measurement of the third-order optical susceptibility of these nanocomposites. The ARINS technique utilizes the dressing of two unequal-intensity counter-propagating pulsed optical beams with differential nonlinear phases, which occurs upon traversing the sample. This difference in phase manifests itself in the intensity-dependent transmission, measurement of which enables us to extract the values of nonlinear refractive index (η₂) and nonlinear absorption coefficient (β), finally yielding the real and imaginary parts of the third-order dielectric susceptibility (χ⁽³⁾). The real and imaginary parts of χ⁽³⁾ are obtained in the orders of 10⁻¹⁰ e.s.u for silver nanocluster-glass composites. The present value of χ⁽³⁾, to our knowledge, is extremely accurate and much more reliable compared to the values previously obtained by other workers for similar silver-glass nanocomposites using only Z-scan technique. Optical nonlinearity has been explained to be due to two-photon absorption in the present nanocomposite glasses and is essentially of electronic origin.     

N+和Ti+离子注入井冈霉素生产菌诱变筛选高产菌株的研究

利用N 和Ti 离子注入对井冈霉素生产菌株进行诱变选育,比较了出发菌株经过两种离子源注入后的诱变效应.初步探索使用金属离子和气体离子交替注入诱变方法,得到了较高的正突变率和突变增幅.用该方法诱变得到一株高产菌株B1-3,其产井冈霉素A组分的效价为21514,比出发菌株提高54.4%.经多次传代实验表明该菌株的遗传稳定性较好.     

Optical absorption of metallic Zn nanoparticles in Zn ion implanted sapphire

Zn⁺ ion implantation (48 keV) was performed at room temperature up to a fluence of 5 × 10¹⁷ cm⁻² in -Al₂O₃ single crystals. X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy were utilized to characterize the optical properties, chemical charge states and the microstructure of embedded metallic Zn nanoparticles, respectively. XPS analysis indicated that implanted Zn ions are in the charge state of metallic Zn⁰. TEM analysis revealed the metallic Zn nanoparticles of 3–10 nm in the as-implanted sample at a fluence of 1 × 10¹⁷ cm⁻². A selected area electron diffraction (SAD) pattern indicates the random orientation of the Zn nanoparticles. A clear absorption peak appeared gradually in the optical absorption spectra of the as-implanted crystals, due to surface plasma resonance (SPR) of Zn nanoparticles. The wavelength of the absorption peak shifted from 260 nm to 285 nm with the increasing ion fluence, ascribed to the growth of Zn nanoparticles.