Localization effects in transition-metal doped Bi2Sr2CaCu2O8+y high-temperature superconductors

Doping Bi₂Sr₂Ca₁Cu₂O_8+y with Co causes a superconductor-insulator transition. We study correlations between changes in the electrical resistivity _ab(T) and the electronic bandstructure using identical single crystalline samples. For undoped samples the resistivity is linear in temperature and has a vanishing residual resistivity. In angle resolved photoemission these samples show dispersing band-like states. Co-doping decreases T_c and causes and increase in the residual resistivity. Above a threshold Co-concentration the resistivity is metallic (d_ab/dT>0) at room temperature, turns insulating below a characteristic temperature T_min and becomes superconducting at even lower temperature. These changes in the resistivity correlate with the disappearance of the dispersing band-like states in angle resolved photoemission. We show that Anderson localization caused by the impurity potential of the doped Co-atoms provides a consistent explanation of all experimental features. The coexistance of insulating (d_ab/dT <0) normal state behavior and superconductivity indicates that the superconducting ground state is formed out of spatially almost localized carriers.     

Thermal expansion of Bi2.2Sr1.8CaCu2Ox superconductor single crystals

Using a low-temperature stage X-ray diffractometer, we have investigated the temperature dependence of the lattice parameters of single crystal superconductors Bi₂Sr_1.8CaCu₂O_x. The experimental results show that (i) the lattice constants increase linearly with increasing temperature above about 100 K; (ii) thec-axis lattice parameter shows a kink in the superconducting transition region, while thea, b-axis parameters do not show any anomalous behavior in this region; (iii) botha, b, andc show negative thermal expansion coefficients below 40–50 K, which may be related to the characteristics of the Cu-O bond.     

Transport properties of textured Bi2Sr2CaCu2O8+y, thin films

Superconducting films of the high-T _c compound Bi₂Sr₂CaCu₂O_8+y , have been grown on (111)-oriented gadolinium gallium garnet substrates by a liquid-phase technique. The films show a very high degree of preferential orientation with thec-axis perpendicular to the substrates. The onset of the resistive transition was 85 K while zero resistance was obtained at 78 K. Results concerning the critical current properties of the films are described. Measurements of the paraconductivity effects on the electrical resistivity above the superconducting transition due to thermodynamic fluctuations are also reported.Supported by Ansaldo S.p.A Divisione Ansaldo Ricerche, Via Corso Perrone 25, I-16100 Genova, Italy.     

Temperature and spectral dependences of persistent photoconductivity in YBa2Cu3Ox thin films

Temperature and spectral dependences of photoinduced changes of resistance were measured in YBa₂Cu₃O _x thin films with oxygen content ranging as 6.35 <x < 6.75. The absolute value of efficiency of initiation of photoinduced changes decreases with increase in oxygen content, but the position of peaks in the spectral dependence does not change with a change ofx. Temperature dependences of efficiency have an anomaly atT220 K, which is present in all the samples studied, and correlates with anomalies observed by other experimental techniques. Qualitatively similar temperature and spectral dependences of efficiency for the samples in both the insulating and metallic phases may be considered as an indication that the persistent photoconductivity effect in YBCO on both sides of the metal-insulator transition has a common origin.     

Necking and seed growth of Bi2Sr2CaCu2Ox superconducting single crystals

Single crystals of Bi₂Sr₂CaCu₂O_x were grown using a travelling solvent floating zone technique in an infrared radiation furnace with seed crystals. The purpose of the process was to obtain large single crystals. The use of seed crystals was found to be quite effective for increasing the thickness of the crystal in the c-axis direction. Characterization of the single crystal was investigated using a polarized optical micrograph, EPMA, TEM, RBS and a high resolution X-ray diffractometer.     

Transport and Magnetic Properties of Bi1.7Pb0.4Sr1.5Ca2.5Cu3.6Ox/(LiCl)y Superconductors

We investigated the superconducting critical temperature, the intra- and intergranular critical current density, and the thermopower properties of Bi_1.7Pb_0.4Sr_1.5Ca_2.5Cu_3.6O _x /(LiCl) _y samples. All these properties have been compared with those of Bi_1.7Pb_0.4Sr_1.5Ca_2.5Cu_3.6O _x /(LiF) _y specimens. It was found that the critical temperature determined from resistive and AC complex susceptibility measurements show a maximum and the transition width shows a minimum for the intermediate values of y. Powder X-ray diffraction studies and the AC complex susceptibility measurements reveal that in our samples the amount of Bi₂Sr₂Ca₂Cu₃O_{10 +} high-temperature superconducting phase is maximum for y 0.02. The amount of LiCl in Bi_1.7Pb_0.4Sr_1.5Ca_2.5Cu_3.6O _x /(LiCl) _y changes the superconducting properties of the grains as well as of the intergrain matrix. The splitting of the peak in the temperature dependence of the imaginary part of the complex susceptibility, corresponding to the dissipation inside the grains, was also observed.     

Superconductivity of barium-doped Bi2Sr2CaCu2Oy

Sintered ceramic samples of Bi₂Sr_2–x Ba _x CaCu₂O_y with nominal barium fraction 0x0.3 have been prepared by the solid-state reaction method. WDS studies verified that barium enters the superconducting phase. For slowly cooled samples, the midpointT _c of the superconducting transition is significantly increased by barium doping, whereas for quenched samplesT _c is little affected. The increase ofT _c with increasing barium fraction is consistent with a decrease in the hole concentration in the superconducting layers.     

Preparation and properties of Tl2Ba2CaCu2O8 thin films

Anex situ process has been developed to produce thin superconducting Tl₂Ba₂CaCu₂O₈ films. The properties of films grown on different substrates using different annealing regimes were studied. Critical temperatures of 103–107 K were measured on films prepared in a broad range of annealing temperatures on SrTiO₃, LaAlO₃, and Y-ZrO₂ substrates. A critical current density,J _c, of 2×10⁶ A/cm² at 77 K was measured on LaAlO₃. Film morphology was studied by SEM, AFM, and STM.     

Point contact investigation on Bi2Sr2CaCu2O8+y thin films

We have measured point contacts with a gold tip on Bi₂Sr₂CaCu₂O_8+y thin films and Bi₂Sr₂CaCu₂O_8+y/SrTiO₃ double layers. The results show tunneling or direct conductivity behaviour depending on the junction parameters and can be fitted by corresponding theoretical models. From fitting procedure of differential characteristics by modified Blonder-Tinkham-Klapwijk (BTK) theory the Fermi velocity v_F=5×10⁵ m/s, ratio 2(4.2K)/kT_c=7.9 and coherence length _ab=3.5 nm were obtained. The changing of the interface transmission by additional layers of different thickness corresponding to metallic or insulating behaviour is shown. In the frame of the inelastic scattering of quasiparticles the linear background of differential conductance is discussed.This work was supported by German BMFT under Contract No.l3N5924A and Slovak Grant Agency for Sciences (Grants Nos. 2/990125/93 and 2/999185/92).     

Superconducting properties of iron chalcogenide thin films

Abstract

Iron chalcogenides, binary FeSe, FeTe and ternary FeTe_xSe_1?x, FeTe_xS_1?x and FeTe:O_x, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i) easy fabrication and epitaxial growth on common single-crystal substrates; (ii) strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe_0.5Se_0.5, zero-resistance transition temperature T_c0^bulk = 13.5 K, but T_c0^film = 19 K on LaAlO₃ substrate); (iii) high critical current density (J_c ～ 0.5 ×10⁶ A cm² at 4.2 K and 0 T for FeTe_0.5Se_0.5 film deposited on CaF₂, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition) with a weak dependence on magnetic field; (iv) high upper critical field (～50 T for FeTe_0.5Se_0.5, B_c2(0), with a low anisotropy, γ ～ 2). These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T) and low temperatures (2–10 K).     

Superconducting properties of iron chalcogenide thin films

Iron chalcogenides, binary FeSe, FeTe and ternary FeTe_xSe_1−x, FeTe_xS_1−x and FeTe:O_x, are the simplest compounds amongst the recently discovered iron-based superconductors. Thin films of iron chalcogenides present many attractive features that are covered in this review, such as: (i) easy fabrication and epitaxial growth on common single-crystal substrates; (ii) strong enhancement of superconducting transition temperature with respect to the bulk parent compounds (in FeTe_0.5Se_0.5, zero-resistance transition temperature T_c0^bulk = 13.5 K, but T_c0^film = 19 K on LaAlO₃ substrate); (iii) high critical current density (J_c ∼ 0.5 ×10⁶ A cm² at 4.2 K and 0 T for FeTe_0.5Se_0.5 film deposited on CaF₂, and similar values on flexible metallic substrates (Hastelloy tapes buffered by ion-beam assisted deposition) with a weak dependence on magnetic field; (iv) high upper critical field (∼50 T for FeTe_0.5Se_0.5, B_c2(0), with a low anisotropy, γ ∼ 2). These highlights explain why thin films of iron chalcogenides have been widely studied in recent years and are considered as promising materials for applications requiring high magnetic fields (20–50 T) and low temperatures (2–10 K).     

Intrinsic critical current of Ag-clad (Bi,Pb)2Sr2Ca2Cu3Oz tapes

True zero-field critical current densityJ _c of a well-characterized BPSCCO/Ag tape has been determined by means of high-resolution ac susceptibility in the temperature range 77–110 K. The resultant values (30,000 A/cm² at 77 K) agree well with the transportJ _c of the same tape. Because of a very thin BPSCCO, the coreJ _c determined from the imaginary part of the ac susceptibility is nearly the same as the zero field one. AllJ _c 's follow the same (1-T/T _c )ⁿ withn=1.45 dependence.J _c shows an approximateH ^–0.5 field dependence over the explored temperature range. Accordingly, the variations ofJ _c withT andH seem to be determined by the flux creep.     

La-substitution Bi2Ti2O7 thin films grown by chemical solution deposition

(La_0.05Bi_0.95)₂Ti₂O₇ (LBTO) thin films had been successfully prepared on P-type Si substrate by chemical solution deposition method. The structural properties of the films were studied by X-ray diffraction. The phase of (La_0.05Bi_0.95)₂Ti₂O₇ is more stable than the phase of Bi₂Ti₂O₇ without La substitution. The films exhibited good insulating properties with room temperature resistivities in the range of 10¹²-10¹³ Ω cm. The dielectric constant of the film annealed at 550 °C at 100 kHz was 157 and the dissipation factor was 0.076. The LBTO thin films can be used as storage capacitors in DRAM.     

Ferroelectric properties of Bi3.4Dy0.6Ti3O12 thin films crystallized in N2

Bi_3.4Dy_0.6Ti₃O₁₂ (BDT) ferroelectric thin films were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD) and annealed in an N₂ environment after pre-annealing in air at 400 °C. The effect of crystallization temperature on the structural and electrical properties of the BDT films was studied. The BDT films annealed in N₂ in the temperature range of 600 °C to 750 °C were crystallized well and the average grain size increased with increasing crystallization temperature, while the remanent polarization of the films is not a monotonic function of the crystallization temperature. The BDT films crystallized at 650 °C have the largest remanent polarization value of 2P_r = 39.4 μC/cm², and a fatigue-free characteristic.     

Flux pinning in high-Tc superconductive films

Magnetization measurements have been performed onc-axis oriented Y- and Gd-based superconductive films in a wide range of the temperaturesT (4.2–85 K) and magnetic fieldsH (0–8 T) withH c-axis. The influence of flux creep on both the temperature dependence of critical current densityJ _cm and the scaling behavior of flux pinning forceF _p has been discussed in detail. The experimental results show that Y and Gd films have different pinning mechanism. Flux pinning-force peaks in high fields are observed in Gd film at high temperatures and can be considered as evidence for collective pinning.     

Crystal structure and anisotropy of iodine-intercalated Bi2Sr2Can?1CunOx

The electronic state and structural configuration of the intercalated iodine species in stage-1, I-Bi₂Sr₂Ca _n–1Cu _n O _x (n = l, 2), have been studied through polarization-resolved Raman and¹²⁹I Mössbauer spectroscopy. The polarization dependence of the Raman spectra and the Mössbauer measurement confirmed the dominant species to be triiodide ions, I ₃ ^– , with alignment of these linear molecules either along thea- orb-axis in the host crystals. Transport measurements such as thermoelectric power and Hall coefficient clearly indicated that hole carriers are doped into the CuO₂ planes upon intercalation, by whichT _c of the host superconductor is changed. Furthermore, based on resistivity measurements in a magnetic field, we suggest that the iodine intercalation leads to a decrease of the anisotropy both in normal and superconducting states, suppressing the extremely two-dimensional character of the Bi₂Sr₂Ca _n–1Cu _n O _x systems.     

Magnetic properties of NiFe2O4 thin films grown on La0.7Sr0.3MnO3-buffered Si substrate

Nickel ferrite NiFe₂O₄ (NFO) thin films have been prepared on a Si substrate (NFO/Si) and La_0.7Sr_0.3MnO₃ (LSMO)-coated Si (100) substrate (NFO/LSMO/Si) by RF magnetron sputtering. The microstructures and magnetic properties of the two films were systematically investigated. X-ray diffraction (XRD) and atomic force microscopy (AFM) revealed that highly (331)-oriented NFO films with a smooth surface were grown on the LSMO/Si substrate. The magnetization of the films was measured at room temperature. It showed a clear hysteresis loop in both samples, with the magnetic field applied in the plane. However, no hysteresis loop is seen with the magnetic field applied perpendicular to the film plane. This indicates the presence of an anisotropy favoring the orientation of the magnetization in the direction parallel to the film plane. A study of magnetization hysteresis loop measurements indicates that the LSMO buffer layer may improve the magnetic properties of NFO thin films, and that the saturation magnetization increases from 4.15 × 10⁴ to 3.5 × 10⁵ A/m.     

The flux-line lattice in high-Tc superconductors

The flux-line lattice in type-II superconductors has unusual nonlocal elastic properties which make it soft for short wavelengths of distortion. This softening is particularly pronounced in the highly anisotropic high-T _c superconductors (HTSC) where it leads to large thermal fluctuations and to thermally activated depinning of the Abrikosov vortices. Numerous transitions are predicted for these layered HTSC when the temperatureT, magnetic inductionB, or current densityJ are changed. In particular, the flux lines are now chains of two-dimensional (2D) pancake vortices which may evaporate by thermal fluctuations or may depin individually. At sufficiently highT, ohmic resistivity(T, B) is observed down toJ 0. This indicates that the flux lines are in a liquid state with no shear stiffness and with small depinning energy or that the 2D vortices can move independently. At lowerT, (T, B, J) is nonlinear since the pinning energy of an elastic vortex lattice or vortex glass increases with decreasingJ as predicted by theories of collective pinning and by vortex glass scaling.     

Microstructure and electrical properties of RuO2-CeO2 composite thin films

RuO₂-CeO₂ composite thin films are deposited on various Si substrates by a radiofrequency magnetron sputtering technique. Compacted polycrystalline pellets of the nanostructured CeO₂-RuO₂ composite system are used as standard samples for comparative electrical analyses. All films and composite samples are analyzed by X-ray diffraction and transmission electron microscopy. Electrical measurements of radiofrequency sputtering of thin films are performed as a function of the RuO₂ fraction and of the temperature (between 25 and 400 °C). A nonlinear variation in the electrical conductivity of the RuO₂-CeO₂ composite thin films as a function of the RuO₂ volume fraction (Φ) is observed and discussed. It is interpreted in terms of a power law (in (Φ − Φc)^m ), where m and Φc are parameters characteristic of the distribution of the conducting phase in a composite medium.     

HREM surface profile images of Bi2Sr2CaCu2O8

Surface profile images of Bi₂Sr₂CaCu₂O₈ have been obtained using high-resolution electron microscopy. The cleaved (001) surface of the crystals terminates with a single Bi-O atomic layer. The modulated structure developed in this surface atomic layer was observed directly. The (hk0) surfaces were found to decompose in air into an amorphous coating layer. This coating layer was unlikely recrystallized into the original structure under electron beam irradiation. The amorphous layer on the (hk0) surface formed in pure Ar atmosphere was relatively thin and could be recrystallized into some secondary phases in which a Bi loss was observed. The original (001) surface might also be covered by an amorphous-like layer. This disordered layer could be recrystallized under electron beam irradiation into BiSr₂Ca₂Cu₃O₉, BiSr₂CuO₅, etc. which intergrow with the parent crystal perfectly on the (001) planes.The author thanks the EPSRC for financial support.