Preparation and electrical properties of 0.4Pb(Zn1/3Nb2/3)O3-0.6Pb(Zr0.4Ti0.6)O3 thin films by 2-step annealing method

Films of (1−x)Pb(Zn_1/3Nb_2/3)O₃-xPb(Zr_0.4Ti_0.6) O₃ (x = 0.6, 40PZN-60PZT) were deposited on Pt/TiO₂/ SiO₂/Si substrate through spin coating. Using a combination of homogeneous precursor solution preparation and two-step pyrolysis process, we were able to obtain the 40PZN-60PZT thin films of perovskite phase virtually without pyrochlore phase precipitation after annealing above 650^∘C. But since annealing done at the high temperatures for extended time can cause diffusion of Pt, TiO₂ and Si, and precipitation of nonstoichiometric PbO, we adopted 2-step annealing method to circumvent these problems. The 2-step annealed films show dense microstructure than the 1-step films annealed at higher temperature. Furthermore, the root-mean-square surface roughness of 220 nm thick films which are annealed at 720^∘C for 1 min and then annealed at 650^∘C for 5 min was found to be 3.9 nm by atomic force microscopy as compared to the 12 nm surface roughness of the film annealed only at 720^∘C for 5 min. The electrical properties of 2-step annealed films are virtually same and those of the 1-step annealed films annealed at high temperature. The film 2-step annealed at 720^∘C for brief 1 min and with subsequent annealing at 650^∘C for 5 min showed a saturated hysteresis loop at an applied voltage of 5 V with remanent polarization (P _r) and coercive voltage (V _c) of 25.3 μC/cm² and 0.66 V respectively. The leakage current density was lower than 10⁻⁵A/cm² at an applied voltage of 5 V.     

Calculation of the intrinsic dead layers thicknesses from Au/Ba0.5Sr0.5TiO3/Pt thin film capacitors

Ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films were prepared on Pt/Ti/SiO₂/Si substrates by the sol-gel process. The films were spin-coated at 2000 rpm for 30 secs and then pyrolysed for 5 mins at the temperature of 350^∘C. This coating procedure was repeated for 3, 4, 5 and 6 times to obtain BST films with different thicknesses. After coating the films with the desired repetition times, the films were finally annealed in a conventional furnace at temperatures ranging from 600^∘C to 800^∘C with a 50^∘C interval in between. The films obtained with an annealing procedure of 750^∘C were polycrystalline with the presence of an impurity BaCO₃ phase. The capacitance and leakage current were measured and used to extract information on the metal-BST interface. With the series capacitance model and modified Schottky emission equation, the thickness of the dead layers for Au/BST and Pt/BST interfaces were calculated to be less than 6 nm and 5 nm, respectively.     

Study of nanocrystal TiO2 thin films by thermal annealing

The amorphous films were annealed in a wide temperature range (250–1000^∘C) and film properties of TiO₂ thin films were studied. Nano-sized anatase polycrystallites had been induced by thermal annealing for the films annealed at and above 300^∘C as confirmed by X-ray diffraction. Strong LO-phonon Raman modes, especially B_1g (395 cm⁻¹) and E _g (636 cm⁻¹) in Raman spectra and the absorption peak at 436 cm⁻¹ in absorbance spectra by Fourier transform infrared spectroscopy also indicated the existence of anatase phase in crystalline thin films. In addition, with the increase of the annealing temperature, the wettability of the film surface was enhanced as shown by the decrease of water contact angle from over 90^∘ to less than 40^∘. Moreover, upon UV laser irradiation on film surface, the water contact angle saturated at 10^∘ indicative of a highly hydrophilic surface for all the films, which arose from the dissociative adsorption of water molecules on the defect sits of the surface generated by the photocatalysis reactions of TiO₂. This behavior makes the film a good potential candidate for self-clean coatings.     

Optical Properties of LiTaO3 Thin films crystallized by RTA processes

High-performance pyroelectric infrared detectors have been fabricated using Lithium tantalite (LiTaO₃) thin films deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by diol-based sol-gel method and rapid thermal annealing (RTA) technique. The dielectric and pyroelectric properties of IR detectors of LiTaO₃ thin films crystallized by conventional and RTA processes are investigated. Experimental results reveal that the heating rate will influence strongly on dielectricity and pyroelectricity of LiTaO₃ thin films. The voltage responsivities (Rv) measured at 80 Hz increase from 5496 to 8455 V/W and the specific detecivities (D^∗) measured at 300 Hz increase from 1.94 × 10⁸ to 2.38 × 10⁸ cmHz^1/2/W with an increase of heating rate from 600 to 1800^∘C/min. However, the voltage responsivity and the specific detecivity decrease with heating rate in excess of 1800^∘C/min. The results show that the LiTaO₃ thin film detector with a heating rate of 1800^∘C/min exists both the maximums of voltage responsivity and specific detecivity.     

Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)

Ga₂O₃ and Ga₂O₃-TiO₂ (GTO) nano-mixed thin films were prepared by plasma enhanced atomic layer deposition with an alternating supply of reactant sources, [(CH₃)₂GaNH₂]₃, Ti(N(CH₃)₂)₄ and oxygen plasma. The uniform and smooth Ga₂O₃ and GTO thin films were successfully deposited. Excellent step coverage of these films was obtained by chemisorbed chemical reactions with oxygen plasma on the surface. The dielectric constant of GTO thin film definitely increased compared to Ga₂O₃ film, and the leakage currents of GTO films were comparable to Ga₂O₃ films. The leakage current density of a 40-nm-GTO film annealed at 600^∘C was approximately 1×10⁻⁷ A/cm² up to about 600 kV/cm.     

Structure and dielectric properties of BaTi4O9 thin films for RF-MIM capacitor applications

BaTi₄O₉ thin films were grown on a Pt/Ti/SiO₂/Si substrate using RF magnetron sputtering. A homogeneous BaTi₄O₉ crystalline phase developed in the films deposited at 550^∘C and annealed above 850^∘C. When the thickness of the film was reduced, the capacitance density and leakage current density increased. Furthermore, the dielectric constant was observed to decrease with decreasing film thickness. The BaTi₄O₉ film with a thickness of 62 nm exhibited excellent dielectric and electrical properties, with a capacitance density of 4.612 fF/μm² and a dissipation factor of 0.26% at 100 kHz. Similar results were also obtained in the RF frequency range (1–6 GHz). A low leakage current density of 1.0 × 10⁻⁹ A/cm² was achieved at ± 2 V, as well as small voltage and temperature coefficients of capacitance of 40.05 ppm/V² and –92.157 ppm/^∘C, respectively, at 100 kHz.     

ZnGa2O4 thin films fabricated by Sol-gel spinning coating process

ZnGa₂O₄ thin film phosphors have been synthesized on ITO coated glass and soda-lime glass at a firing temperature of 500^∘C and an annealing temperature of 500^∘C and 600^∘C via a chemical solution method using Zinc acetate dihydrate, Gallium nitrate hydrate and 2-methoxiethanol as a solution. XRD patterns of the film phosphors synthesized showed the peaks of ZnGa₂O₄ crystalline phases. AFM surface morphologies of the ZnGa₂O₄ thin film phosphors revealed marked differences according to an annealing temperature of 500^∘C and 600^∘C under an annealing atmosphere (3% H₂/Ar). On the other hand, the sheet resistance of ZnGa₂O₄ thin film phosphors, which were measured by four-point probe instrument, was approximately 5.76 Ω /square and 7.86 Ω /square with annealing temperature, respectively. The ZnGa₂O₄ thin film phosphors exhibited blue emission spectra with peak wavelength of 434 nm and 436 nm by ultra-violet excitation around 230 nm.     

Thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds fabricated by spark plasma sintering

P-type thermoelectric Bi_0.5Sb_1.5Te₃ compounds were prepared by the spark plasma sintering method with temperature ranges of 300–420^∘C and powder sizes of ∼75 μm, 76–150 μm, 151–250 μm. As the sintering temperature increased, the electrical resistivity and thermal conductivity of the compound were greatly changed due to an increase in the relative density. The Seebeck coefficient and electrical resistivity were varied largely with decreasing the powder size. Subsequently, the compound sintered at 380^∘C with the powders of ∼75 μm showed the maximum figure-of-merit of 2.65 × 10⁻³K⁻¹ and the bending strength of 73 MPa.     

Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures

Ultrathin HfO₂ gate dielectrics have been deposited on strained Si_0.69Ge_0.3C_0.01 layers by rf magnetron sputtering. The polycrystalline HfO₂ film with a physical thickness of ∼6.5 nm and an amorphous interfacial layer with a physical thickness of ∼2.5 nm have been observed by high resolution transmission electron microscopy (HRTEM). The electrical properties have been studied using metal-oxide-semiconductor (MOS) structures. The fabricated MOS capacitors on Si_0.69 Ge_0.3C_0.01 show an equivalent oxide thickness (EOT) of 2.9 nm, with a low leakage current density of ∼4.5 × 10 ^{− 7} A/cm² at a gate voltage of –1.0 V. The fixed oxide charge and interface state densities are calculated to be 1.9 × 10¹² cm^{− 2} and 3.3 × 10 ¹¹ cm^{− 2}eV⁻¹, respectively. The temperature dependent gate leakage characteristics has been studied to establish the current transport mechanism in high-k HfO₂ gate dielectric to be Poole–Frenkel one. An improvement in electrical properties of HfO₂ gate dielectrics has been observed after post deposition annealing in O₂ and N₂ environments.     

Improvement of the thermal and chemical stability of Al doped ZnO films

To improve the stability of sputter-deposited ZnO:Al (AZO) films at high temperature above 300^∘C, an amorphous Zn-Sn-O (ZTO) film was deposited on the top of AZO films as an protective layer by co-sputtering of pure ZnO and SnO₂ targets. Amorphous ZTO films had resistivity in the range from 10⁻² to 10⁻³ Ωcm and were stable up to temperature of 400^∘C. Heat treatments of bare AZO films in the atmosphere at 400^∘C resulted in a dramatic increase in the resistivity accompanied by substantial decrease in carrier concentration and Hall mobility. The AZO films covered with the ZTO film showed remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 200 to 400^∘C in the atmosphere as well as chemical stability in weak acidic solution. X-ray photoelectron spectroscopy analysis showed that the improvement was attained by ZTO layer acting as diffusion barrier of oxygens and/or water vapors.     

Characteristics of Bi4Ti3O12 thin films on ITO/glass and Pt/Si substrates prepared by R.F. sputtering and rapid thermal annealing

Bi₄Ti₃O₁₂ thin films are deposited on ITO/glass and Pt/Ti/Si(100) substrates by R.F. magnetron sputtering at room temperature. The films are then heated by a rapid thermal annealing (RTA) process conducted in oxygen atmosphere at temperatures ranging from 550–700^∘C. X-ray diffraction examination reveals that the crystalinity of the films grown on Pt/Ti/Si is better than that of the films grown on ITO/glass under the same fabrication conditions. SEM observation shows that the films grown on Pt/Ti/Si are denser than those grown on ITO/glass substrates. Interactive diffusion between the Bi₄Ti₃O₁₂ film and the ITO film increases with the increase of annealing temperature. The optical transmittance of the thin film annealed at 650^∘C is found to be almost 100% when the effect of the ITO film is excluded. The relative dielectric constants, leakage currents and polarization characteristics of the two films are compared and discussed.     

Synthesis and properties of ferroelectric Si-doped (Bi, Nd)4Ti3O12 thin films by chemical solution deposition

Ferroelectric Si-doped (Bi,Nd)₄Ti₃O₁₂ thin films have been prepared on Pt/TiO_x/SiO₂/Si substrates through metal-organic compounds by the chemical solution deposition. The Bi_3.25Nd_0.75Ti_2.9Si_0.1O₁₂ (BNTS) precursor films were found to crystallize into the Bi-layered perovskite Bi₄Ti₃O₁₂ single-phase above 600^∘C. The synthesized BNTS films revealed a random orientation having a strong 117 reflection. The BNTS thin films prepared between 600^∘C and 700^∘C showed well-saturated P-E hysteresis loops with P _r of 13–14 μ C/cm² and E _c of 100–110 kV/cm at an applied voltage of 5 V. The surface roughness of the BNTS thin films was improved by Si doping compared with that of undoped Bi_3.35Nd_0.75Ti₃O₁₂ films.     

Synthesis and sintering properties of (La0.8Ca0.2−x Sr x )CrO3 perovskite materials for SOFC interconnect

Synthesis and sintering properties of the (La_0.8Ca_0.2−x Sr _x )CrO₃ samples doped by two alkaline earth metals in comparison to the doped only by one alkaline earth metal were evaluated by phase analysis, sintering properties, thermal expansion behaviors, and electrical conductivity. The sintered (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0, 0.05, and 0.1) and (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0.2) were found to have orthorhombic and rhombohedral symmetries, respectively. Relative density of the (La_0.8Sr_0.2)CrO₃ sample sintered at 1500^∘C for 5 h was lower than that of the (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0, 0.05, and 0.1) sample. TECs of the (La_0.8Ca_0.2−x Sr _x )CrO₃ (x = 0, 0.05, 0.1, and 0.2) in air were 11 × 10⁻⁶/^∘C, 11.2 × 10⁻⁶/^∘C, 11.2 × 10⁻⁶/^∘C, and 11.3 × 10⁻⁶/^∘C, respectively. The electric conductivity of the (La_0.8Ca_0.2−x Sr _x )CrO₃ sample was determined.     

Phase transformation and microwave dielectric properties of BiPO4 ceramics

Monazite-type compounds, BiPO₄ polymorphs were prepared by the solid-state reaction method. The phase transformation and microwave dielectric properties of sintered ceramics were investigated using the X-ray powder diffraction (XRD) and a network analyzer, respectively. The low-temperature phase of BiPO₄ has monoclinic structure, and was transformed into the high-temperature phase with a slight distortion of monoclinic when it is heated above 600^∘C. The effect of the transformation on the microwave dielectric properties was examined. It was found that the dielectric properties of each phase were significantly different. In particular, the high-temperature phase sintered at 950^∘C has good microwave dielectric properties; the relative dielectric constant (ε _r ) = 22, the quality factor (Q× f) = 32,500 GHz and the temperature coefficient of resonant frequency (τ _f ) = − 79 ppm/ ^∘C.     

Ferroelectric properties of heterolayered lead zirconate titanate thin films

Heterolayered Pb(Zr_{1 − x} Ti _x )O₃ thin films consisting of alternating PbZr_0.7Ti_0.3O₃ and PbZr_0.3Ti_0.7O₃ layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600–700^∘C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650^∘C, which exhibits a remanent polarization of 47.7 μC/cm² and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement.     

Hydrogenation induced transformation of paramagnetism to room-temperature ferromagnetism in co-doped TiO2 ceramics

Effects of Co _x Ti _1−x O _2−δ on the sinterability and the ferromagnetism properties of Co ₂sO ₃/TiO ₂ (0.0 < x < 0.06) ceramics are investigated in this paper. It is found that the Co-doped Ti O ₂ ceramics transform from paramagnetism to room-temperature ferromagnetism (RTFM) after hydrogenation. With annealing temperatures at 600^∘ C and 1000^∘ C, these as-prepared samples present anatase and rutile structures respectively, which are analyzed with X-ray diffraction (XRD). After hydrogenation, the relation between temperature variations and the magnetic susceptibility for the hydrogenated samples were measured under zero-field-cooled and field-cooled conditions by using SQUID magnetometer. And the hysteresis loops are observed. These ferromagnetism resonance data suggest that the observed RTFM is at least partly due to the Cobalt nano-particles in our hydrogenated samples.     

Low frequency and microwave performances of Ba0.6Sr0.4TiO3 films on atomic layer deposited TiO2/high resistivity Si substrates

We report on high tunablity of Ba_0.6Sr_0.4TiO₃ (BST) thin films realized through the use of atomic layer deposited TiO₂ films as a microwave buffer layer between BST and a high resistivity (HR) Si substrate. Coplanar waveguide (CPW) meander-line phase shifters using BST/TiO₂/HR-Si and BST/MgO structures exhibited a differential phase shift of 95^∘ and 24.4^∘, respectively, at 15 GHz under an electric field of 10 kV/cm. The figure of merit of the phase shifters at 15 GHz was 30.6^∘/dB for BST film grown on a TiO₂/HR-Si substrate and 12.2^∘/dB for BST film grown on a MgO single crystal substrate. These results constitute significant progress in integrating BST films with conventional silicon technology.     

Influence of ion beam bombardment on characteristic of InGaN/GaN single quantum well grown by metal–organic chemical vapor deposition

The influence of ion beam bombardment on sapphire substrate was investigated on the electrical and optical characteristics of Indium–Gallium–Nitride/Gallium–Nitride (InGaN/GaN) single quantum well (SQW) structure. Ion bombardment of N⁺, He⁺, H⁺ ions were made on single crystal substrate of sapphire with dose of 1?×?10^14–17 ions/cm². The InGaN/GaN SQW was fabricated on the ion beam bombarded sapphire substrate in two-flow Metal Organic Chemical Vapor Deposition (MOCVD) equipment. The thickness of InGaN/GaN SQW was about 20 nm and the composition of InGaN/GaN SQW was found to be In_0.1Ga_0.9N. In PL spectra, it is found that InGaN/GaN SQW was emitted from 441.1 to 446.6 nm (2.8–2.7 eV). The highest mobility value of 118 cm²/V–S and the lowest carrier concentration of 3.41?×?10¹⁷/cm² was found for N of 10¹⁶ ions/cm² ion beam bombarded sample. The optimal condition for InGaN/GaN SQW on sapphire substrate of ion beam bombardment was deduced to be N⁺ ion dose of 10¹⁶ ions/cm².     

Microwave dielectric properties of Ca[(Li1/3Nb2/3)1−x Tix]O3−δ ceramics with glass

The effect of the addition of glass on the densification, low temperature sintering, and microwave dielectric properties of the Ca[(Li_1/3Nb_2/3)_1−x Ti_x]O_3−δ(CLNT) was investigated. Addition of glass (B₂O₃-ZnO-SiO₂-PbO system) improved the densification and reduced the sintering temperature from 1150^∘C to 900^∘C of Ca[(Li_1/3Nb_2/3)_1−x -Ti_x]O_3−δ microwave dielectric ceramics. As increasing glass contents from 10 wt% to 15 wt%, the dielectric constants (ε_r) and bulk density were increased. The quality factor (Q⋅f₀), however, was decreased slightly. The temperature coefficients of the resonant frequency (τ_f) shifted positive value as increasing glass contents over Ti content is 0.2 mol. The dielectric properties of Ca[(Li_1/3Nb_2/3)_0.75Ti_0.25]O_3−δ with 10 wt% glass sintered at 900^∘C for 3 h were ε_r = 40 Q·f₀ = 11500 GHz, τ_f = 8, ppm/°C. The relationship between the microstructure and dielectric properties of ceramics was studied by X-ray diffraction (XRD), and scanning electron microscope (SEM).     

Effects of ZnO on the piezoelectric properties of Pb (Mn1/3 Sb 2/3 )O 3 -Pb(Zr,Ti)O 3 Ceramics

Perovskite-types 0.05Pb(Mn_1/3Sb_2/3)O₂-0.95Pb- (Zr_0.5Ti_0.5)O₃ (PMS-PZT) was synthesized by conventional bulk ceramic processing technique. ZnO as a dopant up to 0.5 mol% was incorporated into the PMS-PZT system, and the effects on piezoelectric properties were investigated. Pyrochlore phase was not detected to form during the synthesis of the PMS-PZT system with 0–0.5 mol% ZnO addition. The highest density of 7.92 g/cm³ was obtained when sintered at 1200^∘C for 2 h. Piezoelectric properties as a function of ZnO content were evaluated using a gain phase analyzer. Piezoelectric charge constant (d ₃₁) and piezoelectric voltage output coefficient (g ₃₁) increased up to −130 pC/N and −24.9 × 10³Vm/N, respectively, with increasing ZnO content. Mechanical quality factor (Q _m) was shown to reduce considerably with increasing ZnO content. When 0.3 mol% of ZnO was added into the system, electromechanical coupling factor (k _p) and relative dielectric constant (ε₃₃ ^T /ε_o) reached to the maximum of 56% and 1727, respectively.