氧化铱薄膜的制备及其导电机理研究

采用脉冲激光沉积技术在Si(100)衬底上制备了高导电的IrO2薄膜,重点研究了退火前后其电学性能和微观结构的变化规律。采用X射线衍射(XRD)、原子力显微镜(AFM)、光电子能谱(XPS)和四探针法对退火前后IrO2薄膜的结构和电性能进行了表征,并利用霍尔效应研究了IrO2薄膜的导电机理。结果表明:IrO2薄膜在空气中退火后,导电性能得到提高,其中在750℃退火的电阻率达到最小值37μΩ.cm。在25～500℃范围内,IrO2薄膜的高温电阻率随着温度的升高呈线性关系逐渐增大,呈现出类似金属的导电特征。在250～400℃沉积的IrO2薄膜载流子的类型为p型;沉积温度较高(500℃)或在更高温度退火处理后,IrO2薄膜载流子的类型为n型,其导电机理以电子导电为主。     

Preparation and properties of SiCN diffusion barrier layer for Cu interconnect in ULSI

SiCN thin films and Cu/SiCN/Si structures were fabricated by magnetron sputtering. And some samples underwent the rapid thermal annealing(RTA) processing. The thin-film surface morphology, crystal structure and electronic properties were characterized by atomic force microscopy(AFM), X-ray diffractometry(XRD), Fourier transform infrared transmission(FTIR) and four-point probe(FPP) analyses. The results reveal the formation of complex networks among the three elements, Si, C and N, and the existence of different chemical bonds in the SiCN films, such as Si-C, Si-N, C-N and C=N. The as-deposited SiCN thin films are amorphous in the Cu/SiCN/Si structures and have good thermal stability, and the SiCN thin films are still able to prevent the diffusion reaction between Cu and Si interface after RTA processing at 600 ℃ for 5 min.     

紫外光辐照Bi_(4-x)Nd_xTi_3O_(12)薄膜制备工艺

以Pt(111)/Ti/SiO_2/Si为基片,采用溶胶凝胶法,通过紫外光辐照钕掺杂钛酸铋(Bi_(4-x)Nd_xTi_3O_(12), x=0.25, 0.75)胶体,分别采用电泳沉积和甩胶沉积制备薄膜,并对比了制备的薄膜质量.通过差热-热重分析(DSC-TG)、X射线衍射(XRD)、原子力显微镜(AFM)等技术手段对Sol-Gel法制备的BNT薄膜进行了表征.研究结果表明,经紫外光辐照和电泳沉积制备的Bi_(4-x)Nd_xTi_3O_(12) (x=0.25, 0.75) 薄膜于300 ℃煅烧有机物,500 ℃随炉热处理,可得到均匀致密且(117)择优取向的钙钛矿相BNT薄膜.     

MAGNETOSTRICTIVE BEHAVIOUR OF R（Fe_（1－x）Al_x）_y ALLOYS（R＝Dy_（0．65）Tb_（0．25）Pr_（0．1））

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IN SITU TEM OBSERVATION OF AMORPHOUS Nd_xFe_(1-x)THIN FILMS AND THEIR CRYSTALLIZATION

The room temperature stability and crystallization of amorphous Nd_xFe_(1-x)thin filmswith x=0.06—0.90,prepared by flash evaporation at 77 K,were investigated by X-raydiffraction and TEM observation.The amorphous Nd_xFe_(1-x)films are stable at roomtemperature when 0.19相似文献   

Supercapacitor behavior of CuO-PAA hybrid films: Effect of PAA concentration

The Cu-poly(acrylic) acid (PAA) thin films were deposited at room temperature by a simple and cost effective polymer assisted deposition (PAD) method. The solution containing Cu salt and PAA was spin coated to yield the thin films with desired properties. The Cu-PAA films were annealed at 400 °C in ambient air for 4 h to obtain CuO-PAA phase. The effect of PAA concentration on the film properties is studied and characterized by employing various techniques. The structural and surface morphological studies are carried out using X-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. Fourier transform infrared spectroscopy (FT-IR) and FT-Raman spectroscopy are employed to investigate the hybrid film formation. Wetting behavior is studied by measuring the contact angle of water on the film surface. Cyclic voltammetry (CV) studies were carried out to investigate the specific capacitance of CuO-PAA films in aqueous 1 M H₂SO₄ electrolyte. Hybrid films deposited with 2 mM PAA exhibits highest specific capacitance of 65 F g⁻¹.     

钛酸铜钙/钛酸钙复合陶瓷的制备和介电性能

以CaCO_3、TiO_2、CuO为原料,采用两种工艺途径制备了(1-x)CCTO-xCTO(0≤x≤1)复合陶瓷材料.采用X射线衍射仪、扫描电子显微镜、阻抗分析仪对(1-x)CCTO-xCTO复相陶瓷的相组成、显微结构特征和介电性能进行了研究,发现不同工艺途径制备的(1-x)CCTO-xCTO复合陶瓷的显微结构略有差异,但介电性能基本相同,表明两种工艺途径制备的陶瓷中CCTO和CTO具有相似的连接情况.此外,还发现2/8CCTO-6/8CTO复合陶瓷在室温和1 kHz频率时,材料的介电常数ε接近1500,且介电损耗tgδ小于0.08.     

Foitite电气石的热处理及显微结构特征

将Foitite电气石在400～1000℃×2 h进行焙烧处理。采用XRD、FTIR、RAMAN光谱等研究热处理对电气石粉体物相结构、表面结构的影响。结果表明:随着热处理温度升高,电气石晶胞体积逐渐减小,在700℃具有最小值;热处理温度对电气石的表面电性有较大影响,随温度升高,电气石的Zeta电位呈增大趋势,当温度达到500℃时,Zeta电位值最大为-47.5 mV;经过热处理后,电气石物相发生明显变化,由镁电气石转化为布格电气石,当温度高于900℃,出现烧结现象,电气石开始分解,分解产物为Fe2O3和Al4B2O9;热处理不仅可使电气石中的Fe2+氧化成Fe3+,还可改变不同价态铁离子在结构中的占位(Y、Z位置)。     

Microstructure and Electrochemical Behavior of La0.8Sr0.2MnO3 Deposited by Solution Precursor Plasma Spraying

采用液料等离子喷涂方法(SPPS)制备固体氧化物燃料电池多孔La0.8Sr0.2MnO3(LSM)阴极。用SEM观察LSM的微结构,用XRD研究其相结构。考察了喷涂距离和热处理温度对LSM微结构的影响规律。结果表明,SPPSLSM在1050℃热处理2h后形成连续的具有微纳介孔结构的涂层,且LSM具有单一的钙钛矿结构。利用电化学交流阻抗谱方法研究了LSM极化行为。微结构对极化性能有显著影响,1000℃时,LSM在喷涂距离为60mm时具有最佳的电化学性能,阴极极化电阻约为0.3Ω·cm2。通过工艺的控制,SPPS可以实现SOFC阴极相和微结构的优化。     

Elaboration and characterization of nanocrystalline TiO2 thin films prepared by sol–gel dip-coating

Nanocrystalline TiO₂ thin films were deposited on a ITO coated glass substrate by sol–gel dip coating technique, the layers undergo a heat treatment at temperatures varying from 300 to 450 °C. The structural, morphological and optical characterizations of the as deposited and annealed films were carried out using X-ray diffraction (XRD), Raman spectroscopy, Atomic Force Microscopy (AFM), visible, (Fourier-Transform) infrared and ultraviolet spectroscopy, Fluorescence and spectroscopic ellipsometry. The results indicate that an anatase phase structure TiO₂ thin film with nanocrystallite size of about 15 nm can be obtained at the heat treatment temperature of 350 °C or above, that is to say, at the heat treatment temperature below 300 °C, the thin films grow in amorphous phase; while the heat treatment temperature is increased up to 400 °C or above, the thin film develops a crystalline phase corresponding to the titanium oxide anatase phase. We have accurately determined the layer thickness, refractive index and extinction coefficient of the TiO₂ thin films by the ellipsometric analysis. The optical gap decreases from 3.9 to 3.5 eV when the annealing temperature increases. Photocatalytic activity of the TiO₂ films was studied by monitoring the degradation of aqueous methylene blue under UV light irradiation and was observed that films annealed above 350 °C had good photocatalytic activity which is explained as due to the structural and morphological properties of the films.     

Fabrication of TiSi<Subscript>2</Subscript> using microwave hydrogen plasma annealing

A new method, microwave hydrogen plasma annealing of sputter-deposited titanium films on an Si (111) substrate, was used to fabricate TiSi₂ films. The films were characterized by x-ray diffraction, Auger electron spectroscopy, sputter depth profiling, and four-point probe resistivity measurements. Polycrystalline TiSi₂, dominated by components with (040) orientation, was grown at the annealing temperature of 800 °C. The microwave hydrogen plasma was considered not only to provide the heat for the solid-phase reaction, but also to promote the solid-phase reaction by enhancing atom mobility and diffusion.     

工艺参数对20MnSi热轧棒材力学性能的影响

通过研究规格为φ14mm的20MnSi热轧棒材工艺参数,指出在终轧温度为850℃左右时,以0．5～2．0℃／s的速度冷却至650℃,得到的20MnSi热轧成品棒材组织晶粒更细小,力学性能更高。与常规轧制相比,对20MnSi热轧棒材参数进行控制,抗拉强度提高60MPa,晶粒直径平均缩小2．2μm。     

无模板剂的溶胶-水热法合成具有可见光响应的氮掺杂混晶 TiO2(锐钛矿/金红石/板钛矿)纳米棒束

采用无模板剂的溶胶-水热法制备了具有可见光响应的N掺杂锐钛矿/金红石/板钛矿型TiO_2(N-TiO_2)纳米棒束,并利用X射线衍射(XRD)、透射电镜(TEM)、紫外-可见光漫反射光谱(UV-Vis DRS)、傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)等手段对获得的样品进行了表征。以甲基橙为模型反应物,评价了N-TiO_2纳米棒束的光催化活性。表征结果结合光催化活性评价结果显示,与P25-TiO_2相比,N掺杂、混晶及纳米棒束之间的协同作用是所制备的混晶N-TiO_2纳米棒束具有良好光催化活性的主要原因,并对混晶N-TiO_2纳米棒束光催化降解甲基橙的机理进行了探讨。     

Effects of Annealing Temperature on the Structural,Optical,and Electrical Properties of ZnO Thin Films Grown on n-Si<100>Substrates by the Sol–Gel Spin Coating Method

The effects of annealing temperature on the sol–gel-derived ZnO thin films deposited on n-Sh100 i substrates by sol–gel spin coating method have been studied in this paper.The structural,optical,and electrical properties of ZnO thin films annealed at 450,550,and 650 °C in the Ar gas atmosphere have been investigated in a systematic way.The XRD analysis shows a polycrystalline nature of the films at all three annealing temperatures.Further,the crystallite size is observed to be increased with the annealing temperature,whereas the positions of various peaks in the XRD spectra are found to be red-shifted with the temperature.The surface morphology studied through the scanning electron microscopy measurements shows a uniform distribution of ZnO nanoparticles over the entire Si substrates of enhanced grain sizes with the annealing temperature.Optical properties investigated by photoluminescence spectroscopy shows an optical band gap varying in the range of 3.28–3.15 eV as annealing temperature is increased from 450 to 650 °C,respectively.The fourpoint probe measurement shows a decrease in resistivity from 2:1 10 2to 8:1 10 4X cm with the increased temperature from 450 to 650 °C.The study could be useful for studying the sol–gel-derived ZnO thin film-based devices for various electronic,optoelectronic,and gas sensing applications.     

掺钼对二氧化钒薄膜热致变色特性的影响

通过溶胶-凝胶和真空热处理工艺在石英基底上制备出不同掺Mo量的二氧化钒薄膜。对薄膜进行了X射线衍射及热分析,并测试了其电阻及7.5~14μm波段红外热图随温度的变化,研究了Mo掺杂对二氧化钒薄膜热致变色性能的影响。结果表明,Mo进入VO2晶格,替换了部分V的位置;随着掺Mo量的不断增加,相变温度不断降低,但电阻突变量级比未掺杂时有所减小;掺Mo量(MoO3:V2O5,下同)为5%时,相变温度可降至45℃左右;红外热图分析表明,Mo掺杂VO2薄膜的7.5~14μm波段发射率可在较低温度下突变降低,薄膜在温度增加时可在较低温度水平上主动控制自身辐射强度、降低其辐射温度。     

沉积温度和退火处理对BCN薄膜结构的影响

采用脉冲激光沉积技术,在Si(100)基片上制备了BCN薄膜,研究了沉积温度和退火处理对BCN薄膜组分和结构的影响。利用傅里叶变换红外光谱(FTIR)和X射线光电子能谱(XPS)对制备的BCN薄膜进行了表征。结果表明:沉积温度升高时,BCN薄膜的组分无明显改变。所制备的BCN薄膜包含B—N,C—B和C—N化学键,是由杂化的B—C—N键构成的化合物。真空退火温度为700℃时,BCN薄膜结构稳定;大气退火温度达到600℃时,BCN薄膜表面发生氧化分解,同时有C≡N键形成,表明C≡N键具有较好的高温热稳定性。     

Al2O3-TiO2复相陶瓷涂层在动态LBE中的耐腐蚀行为

目的分析研究Al_2O_3-TiO_2复相陶瓷涂层在高温流动铅铋合金中的耐腐蚀行为。方法以纯Ti粉末、Fe Al粉末、CrFe粉末为原料制得复合粉末,在CLAM钢基材表面上采用热喷涂-激光原位合成复合工艺制备了Al_2O_3-TiO_2复相陶瓷涂层。试样在500℃,流速为0.3 m/s的液态铅铋合金中进行了时长1000 h的动态腐蚀实验,分别采用X射线衍射仪(XRD)、扫描电镜(SEM)、能谱仪(EDS)等分析测试手段对涂层试样在动态LBE中的耐腐蚀行为进行了研究表征。结果在CLAM钢基材表面制备的Al_2O_3-TiO_2复相陶瓷涂层表面形貌整体较腐蚀前仍保持完好,涂层物相成分保持稳定,截面分析显示铅铋合金在腐蚀过程在涂层中未见渗透;而没有涂层保护的CLAM钢基材在腐蚀后表面发生明显的氧化腐蚀现象,生成结构疏松的Fe3O4氧化层,铅铋合金在氧化层中有扩散分布。结论通过火焰热喷涂-激光原位合成复合工艺在CLAM钢表面制备得到的Al_2O_3-TiO_2复相陶瓷涂层在高温流动的铅铋合金腐蚀条件下组织结构稳定,具有良好的适用性,能有效地阻止高温流动铅铋合金对CLAM钢基体材料的腐蚀。     

Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition

Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray dif- fraction (XRD), atom force microscopy (AFM), and Fourier transform infrared spectrum (FTIR) were employed to measure the crystalline structure, surface morphology, and infrared opdcal transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO<,2>, with preferred orientation of (011). The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80℃. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same tempera- ture across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect.     

沉积温度对Ge2Sb2Te5溅射薄膜结构、电/光性质的影响

在衬底加热条件下利用磁控溅射法制备Ge2Sb2Te5薄膜,利用X射线衍射仪表征各种沉积温度下薄膜的结构,差示扫描量热法(DSC)确定的薄膜晶化温度为168℃(加热升温速率为5℃/min)。用四探针法测试薄膜的方块电阻,分光光度计测试薄膜的反射率谱,并根据反射率数据讨论在波长为405和650nm时薄膜的反射率对比度同沉积温度关系。结果表明:室温沉积的薄膜为非晶态;在衬底温度为140℃条件下薄膜已完全转变为晶态Ge2Sb2Te5,在300℃时出现少量的六方相;低于140℃时易形成非Ge2Sb2Te5组分的其它晶相,它们对薄膜的电/光性质有很大的影响,可能是导致此类相变光存储薄膜使用过程中反射率对比度下降的原因。     

ISOTHERMAL SECTION OF Mg-Zn-La SYSTEM IN Mg RICH CORNER AT 350℃

Alloys of Mg-Zn-La system in Mg rich corner at 350℃ have been prepared in this study. Scanning electron microscopy （SEM）, electron probe microanalysis with energy dispersive X-ray spectroscopy （EPMA-EDS）, and X-ray diffraction （XRD） have been used to identify the phase equilibrium and the composition of each phase in the alloys. As a result, the isothermal section of Mg-Zn-La system in Mg rich corner at 350℃ has been determined. The result shows that, in addition to some binary phases, there exists a linear ternary compound called T-phase in Mg-Zn-La system at 350℃, in which the La content is about 8 at. pct ±0.4 at. pct and the Zn content is 8 at. pct- 48 at. pct. The T-phase has a C-centered orthorhombic crystal structure, and the lattice parameters are a=0.965-1.020 nm, b=1.121 1.142 nm, c=0.950-0.977 nm.