Microstrip PIN diode microwave switch

A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.     

用来驱动PIN开关二极管的高压混合集成电路的设计及应用

该文介绍了用于驱动PIN开关二极管的一种高压(+100V)驱动器的设计,论述了其设计原理,并结合工程实际,对其主要应用给予举例。     

基于PIN管的多路大功率宽带高线性射频开关的研制

设计制作了一款工作于100~400MHz的大功率宽带高线性单刀多掷PIN管收发开关。该开关采用1分6再分6的串联型结构,通过对PIN管的选取和微带线布局来实现对开关插损、隔离度和驻波比的要求。由于采用串联结构而非串并结构,该开关驱动部分大为简化。测试结果表明,该开关插损小于0.3 dB,隔离度大于50 dB,驻波比小于1.2,功率容量为100 W,二次谐波抑制大于70 dBc。     

Wide-band PIN diode SPST switch in unilateral asymmetric finline

This paper reports the design and modelling of a wide-band, low insertion loss finline SPST switch using beam lead PIN diodes at the Ka-band. A unilateral asymmetric finline with an offset slot has been used to realize a transmission line with lower impedance to best match the impedance of the diode. Finline tapered transitions have been designed with exponential profiles for minimum reflection coefficient over the band. Wide-band operation, covering the full Ka-band, has been achieved with reactive tuning by varying the diode spacing. Four PIN diodes have been shunt mounted across the unilateral asymmetric finline slot. An insertion loss of 0.9 dB minimum and 1.65 dB maximum over the entire Ka-band and isolation of >25 dB from 26.5 to 35GHz and >20 dB over the complete Kaband has been achieved.     

一种紧凑型结构的PIN二极管单刀九掷开关

提出了一种紧凑型的PIN二极管微波开关电路设计。在并联型PIN二极管单刀双掷开关电路设计的基础上,提出了单刀九掷开关电路结构。工作频带宽度为800 MHz。该开关电路可承受连续功率为45 d Bm,电路实测结果为所有通路的插入损耗绝对值不大于1.6 d B,关断时的隔离度绝对值不小于53 d B,通路输入输出驻波比小于1.55,开关时间为450 ns。     

L-band high power silicon p-i-n diode switch

An extremely high power silicon p-i-n diode switch was developed for operation over the 1255- to 1385-MHz frequency range. It was successfully tested at 4-MW peak power with 100-µs pulsewidth. and 2.5-MW peak and 100-kW average power with 200-µs pulsewidth in a balanced duplexer configuration.     

A high performance switch for OC-12 SONET self-healing ringnetworks

The progress of ITU-T and ANSI standards on SDH/SONET is accelerating the evolution of transmission systems all over the world. The advanced operation administration and maintenance (OAM) functions it provides makes it possible to create a self healing ring network which protects against failure. This self-healing ring consists of add/drop multiplexers (ADM's). The switch in the ADM plays an important role in achieving self-healing operation. In this paper, self-healing ring architecture and operations are analyzed in order to determine the requirements for the ADM switch. On the basis of this result, new space division switching methods, which significantly reduce the amount of hardware needed, are proposed. A parallel processing architecture which makes it possible to develop a low-cost large-scale switch is also devised. Finally, a developed switch LSI chip is presented. Combining two identical chips with the proposed parallel processing architecture, a 32×32 STS-3 switch (5 Gb/s throughput) with an STS-1 time slot interchange (TSI) function is realized     

A high performance RDS-detector for low voltage applications

The design and realisation of the analog part for an RDS-receiver, the RDS-detector, is discussed in this paper. The RDS-receiver is developed towards low voltage applications (1.8 V) with low power consumption requirements. A new topology for RDS-receivers is introduced resulting in an important quality improvement, mainly being a higher phase-linearity and a lower power consumption. The performance of the chip is compared to existing RDS-receivers. These receivers use an analog integrated bandpass filter. In the presented topology direct conversion followed by lowpass filtering is used. The chip is realised in a fully differential switched-capacitor technique with correlated double sampling. The latter is used to obtain a very low equivalent input DC-offset. The chip is implemented in a 2µm BiCMOS technology.     

A high breakdown-voltage SiCN/Si heterojunction diode forhigh-temperature applications

Cubic crystalline p-SiCN films are deposited on n-Si(100) substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200°C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2×10^-4 A/cm². Even at 200°C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47×10^-4 A/cm². These properties are better than the β-SiC on Si HJDs for high temperature applications     

A SiGe MMIC 6-bit PIN diode phase shifter

A 6-bit PIN diode phase shifter has been successfully demonstrated at microwave frequencies in a SiGe bipolar technology. A post-silicon polymer dielectric interconnect technology is implemented to achieve low loss microstrip structures on the silicon substrate. The monolithic microwave integrated circuit exhibits flat phase shift, low VSWR, and low insertion loss variation, over the 7- to 11-GHz band. This phase shifter demonstrates the feasibility of integrating SiGe technology into microwave systems.     

A novel LDMOS structure using P-trench for high performance applications

In this paper, we propose a new structure of silicon on insulator (SOI) lateral diffused metal oxide semiconductor (LDMOS) field effect transistors to improve the device performance. In the proposed structure, a trench is created in the buried oxide under the drift and drain regions and filled with p-type Si. We called the proposed structure as P-trench SOI-LDMOS (PT-LDMOS). Our simulations with two dimensional ATLAS simulator shows the unique features exhibited by the proposed structure in comparison with a conventional SOI-LDMOS (C-LDMOS). In the PT-LDMOS, the electric field is modified by producing a new additional peak at the electric field distribution, reducing the magnitude of electric field peak near the gate edge, removing of electric field crowding near the drift and drain junction at the bottom surface of the silicon layer, and making the surface electric field distribution more smooth. We optimize the doping concentration and the dimensions of the P-trench in the PT-LDMOS structure. Hence, the results illustrate the benefits of high performance PT-LDMOS over conventional one and expand the application of SOI-LDMOSs to high voltage.     

A code-division switch architecture for satellite applications

This paper introduces a code-division methodology into switching applications. The proposed method is applied in satellite-switched code-division multiple-access (SS/CDMA) systems for routing CDMA traffic channels on board the multibeam satellites. We present code-division switch (CDS) architectures, analyze the CDS performance, and assess its complexity. The CDS has been shown to route CDMA user channels without introducing interference. The proposed CDS architecture is nonblocking, and its hardware complexity and speed are proportional to the size of the switch. We also examine the amplitude distribution of the combined signal in the CDS bus and the interference evaluation of the end-to-end link in the proposed applications. Then we consider the problem of switch control under an optimum or a random algorithm and compare its complexity with the equivalent problem in time-multiplexed switching methods     

A brain-controlled switch for asynchronous control applications

Asynchronous control applications are an important class of application that has not received much attention from the brain-computer interface (BCI) community. This work provides a design for an asynchronous BCI switch and performs the first extensive evaluation of an asynchronous device in attentive, spontaneous electroencephalographic (EEG). The switch design [named the low-frequency asynchronous switch design (LF-ASD)] is based on a new feature set related to imaginary movements in the 1-4 Hz frequency range. This new feature set was identified from a unique analysis of EEG using a bi-scale wavelet. Offline evaluations of a prototype switch demonstrated hit (true positive) rates in the range of 38%-81% with corresponding false positive rates in the range of 0.3%-11.6%. The performance of the LF-ASD was contrasted with two other ASDs: one based on mu-power features and another based on the outlier processing method (OPM) algorithm. The minimum mean error rates for the LF-ASD were shown to be significantly lower than either of these other two switch designs.     

A novel planar diode mixer for submillimeter-wave applications

A mixer employing a planar GaAs Schottky diode has been designed and tested over a 300-365 GHz bandwidth. Using a planar diode eliminates the disadvantages of mechanical instability and labor-intensive assembly associated with conventional whisker-contacted diodes. The mixer design process uses scale model impedance measurements for both the design of individual components and the measurement of impedances presented to the diode terminals by the mixer mount at fundamental and harmonic frequencies. Results from these impedance measurements are used in linear and nonlinear numerical mixer analyses to predict the mixer performance     

A novel silicon Schottky diode for NLTL applications

The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator (SSOI) substrate for minimized series resistance. Ion implantation technology was used as a low-cost alternative to molecular beam epitaxy to approximate the delta (/spl delta/) doping profile, which results in strong nonlinear CV characteristics. The equivalent circuit model of the Schottky diode under reverse bias conditions was extracted from the S-parameter measurement performed on the diode. The measured CV characteristics show strong nonlinearity, the junction capacitance varies from 182 to 47.5 fF as the reverse bias voltage is varied from 0 to -5 V. A parasitic inductance of 40 pH was measured for the silicon Schottky diode, which is much smaller than a comparable sized GaAs Schottky diode. This small inductance is an advantage for the silicon Schottky diode offering improvement in the silicon NLTL performance.     

Laser-activated p-i-n diode switch for RF application

Results obtained utilizing an optically activated RF switch in the 2-30-MHz range demonstrate the advantages in optically controlled high-power switches from HF to millimeter wave. Testing of a 0.25-mm-thick p-i-n device activated with 116-W peak optical power from a two-dimensional laser array in a 50-Ω system shows isolation between 20.8 and 49 dB, and an average insertion loss of 0.38 dB when measured between 2.5 and 30 MHz     

Isolation spectra for laser diode optical switch

Isolation spectra for a GaAlAs laser diode optical switch were measured directly by using a tunable light source. Isolation was higher than 60 dB in the 200 ? wavelength region. Theoretical isolation spectra, calculated by the GHLB-SME model, were coincident with the measured isolation spectra.     

A multifunctional high-speed switch element for ATM applications

Describes a one-chip 16*8 switch element SE16/8 based upon the shared buffered concept. The device's data inputs/outputs work at a data rate of 175.8 Mb/s, and its central clock inputs at a frequency of 351.6 MHz. To achieve the high system flexibility demanded, the circuit is equipped with many powerful functions: bit-phase alignment, a priority handling feature, a logic circuit, and a RAM self-test option. The SE16/8 was designed in a state-of-the-art 1- mu m CMOS technology comprising 770000 transistors on a chip area of 216 mm/sup 2/. It was packed in a frequency-matched ceramic multilayer quad flat package to cope with the high power (3 W) and speed requirements. The first switching modules built up with the SE 16/8 have already shown the functional superiority of the device presented.<>