Optoelectronic properties of β-Fe2O3 hollow nanoparticles

The effect of hollow structure on the optoelectronic properties of β-Fe₂O₃ hollow nanoparticles (HNPs) was determined. Spectrophotometry showed that the optical transmittance of the β-Fe₂O₃ HNPs was less than 40% in the visible-light region. This opaqueness was suggested to be an optical characteristic, commonly found in the authors' previous studies of TiO₂ and δ-Al₂O₃ HNPs. In addition, β-Fe₂O₃ HNPs had a band gap (1.86 eV) between amorphous (1.73 eV) and polycrystalline (1.97 eV) β-Fe₂O₃ thin films, which was a 5–7 nm thick shell that embraced an intermediate volume of the crystal phase, in-between the two thin films.     

Hydrothermal synthesis and characterization of monodisperse α-Fe2O3 nanoparticles

Monodisperse α-Fe₂O₃ nanoparticles have been successfully prepared by hydrothermal synthetic route using FeCl₃, CH₃COONa as reagents and reacted at 200 °C for 12 h. The morphology and structure of products were characterized by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The results showed that the α-Fe₂O₃ nanoparticles were single-crystalline hexagonal structure and average diameters were about 80 nm. Magnetic properties have been detected by a vibrating sample magnetometer at room temperature. The nanoparticles exhibited a ferromagnetic behavior with the coercive force (Hc), saturation magnetization (Ms) and remanent magnetization (Mr) was 185.28 Oe and 0.494 emu/g, 0.077 emu/g.     

Epitaxial growth and relaxation of γ-Al2O3 on silicon

0.5-10 nm-thick single crystal γ-Al₂O₃ films was epitaxially grown, at high temperature, on Si(001) and Si(111) substrates using electron-beam evaporation techniques. Reflection High Energy Electron Diffraction studies showed that the Al₂O₃ films grow pseudomorphically on Si (100) up to thickness of 2 nm. For higher thicknesses, a cubic to hexagonal surface phase transition occurs. Epitaxial growth and relaxation were also observed for Si(111). The film surfaces are smooth and the oxide-Si interfaces are atomically abrupt without interfacial layers.     

Atomic and electronic structures of Cu/α-Al2O3 interfaces prepared by pulsed-laser deposition

Interfacial atomic structures of Cu/Al₂O₃(0001) and Cu/Al₂O₃(11 0) systems prepared by a pulsed-laser deposition technique have been characterized by using high-resolution transmission electron microscopy (HRTEM). It was found that Cu metals were epitaxially oriented to the surface of Al₂O₃ substrates, and the following orientation relationships (ORs) were found to be formed: (111)_Cu//(0001)Al₂O₃, _Cu//[1 00]Al₂O₃ in the Cu/Al₂O₃(0001) interface and (001)_Cu//(11 0)Al₂O₃, [1 0]_Cu//[0001]Al₂O₃ in the Cu/Al₂O₃(11 0) interface. Geometrical coherency of the Cu/Al₂O₃ system has been evaluated by the coincidence of reciprocal lattice points method, and the result showed that the most coherent ORs were (111)_Cu//(0001)Al₂O₃, [11 ]_Cu//[1 00]Al₂O₃ and (1 0)_Cu//(11 0)Al₂O₃, [111]_Cu//[0001]Al₂O₃, which are equivalent to each other. These ORs were not consistent with the experimentally observed ORs, and it was possible that crucial factors to determine the ORs between Cu and Al₂O₃ were not only geometrical coherency, but also other factors such as chemical bonding states. Therefore, to understand the nature of the interface atomic structures, the electronic structures of the Cu/Al₂O₃ interfaces have been investigated by electron energy-loss spectroscopy. It was found that the pre-edge at the lower energy part of the main peak appeared in the O-K edge spectra at the interface region in both the Cu/Al₂O₃(0001) and Cu/Al₂O₃(11 0) systems. This indicates the existence of Cu–O interactions at the interface. In fact, HRTEM simulation images based on O-terminated interface models agreed well with the experimental images, indicating that O-terminated interfaces were formed in both systems. Since the overlapped Cu atomic density in the experimental ORs were larger than that in the most coherent OR, it is considered that the on-top Cu–O bonds stabilize the O-terminated Cu/Al₂O₃ interfaces.     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Microwave dielectric properties and sintering behavior of nano-scaled (α + θ)-Al2O3 ceramics

The dielectric properties at microwave frequencies and the microstructures of nano (α + θ)-Al₂O₃ ceramics were investigated. Using the high-purity nano (α + θ)-Al₂O₃ powders can effectively increase the value of the quality factor and lower the sintering temperature of the ceramic samples. Grain growth can be limited with θ-phase Al₂O₃ addition and high-density alumina ceramics can be obtained with smaller grain size comparing to pure α-Al₂O₃. Relative density of sintered samples can be as high as 99.49% at 1400 °C for 8 h. The unloaded quality factors Q × f are strongly dependent on the sintering time. Further improvement of the Q × f value can be achieved by extending the sintering time to 8 h. A dielectric constant (_r) of 10, a high Q × f value of 634,000 GHz (measured at 14 GHz) and a temperature coefficient of resonant frequency (τ_f) of −39.88 ppm/°C were obtained for specimen sintered at 1400 °C for 8 h. Sintered ceramic samples were also characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

The influence of the molar ratio of Al2O3 to Y2O3 on sintering behavior and the mechanical properties of a SiC–Al2O3–Y2O3 ceramic composite

The influence of the molar ratio of Al₂O₃ to Y₂O₃ (i.e. M_Al2O3/M_Y2O3) on sintering densification, microstructure and the mechanical properties of a SiC–Al₂O₃–Y₂O₃ ceramic composite were studied. It was shown that the optimal value of M_Al2O3/M_Y2O3 was 3/2, not 5/3, which is customarily considered the optimal molar ratio for the formation of YAG (Y₃Al₅O₁₂) phase. When M_Al2O3/M_Y2O3 is 5/3, materials existed in two phases of YAG and very little YAM phases. The sintering mechanism of the solid phase occurred at 1850 °C. When M_Al2O3/M_Y2O3 was 3/2, materials existed in the two phases YAG (Y₃Al₅O₁₂) and YAM (Y₄Al₂O₉). The formation of the low melting point eutectic liquid phase (YAG + YAM) increased sintering densification. Flexure strength, hardness and relative density were all higher.     

Preparation and characterization of Nb2O5-Al2O3 composite oxide formed by cathodic electroplating and anodizing

Al foil was coated with niobium oxide by cathodic electroplating and anodized in a neutral boric acid solution to achieve high capacitance in a thin film capacitor. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) revealed the niobium oxide layer on Al to be a hydroxide-rich amorphous phase. The film was crystalline and had stoichiometric stability after annealing at temperatures up to 600 °C followed by anodizing at 500 V, and the specific capacitance of the Nb₂O₅-Al₂O₃ composite oxide was approximately 27% higher than that of Al₂O₃ without a Nb₂O₅ layer. The capacitance was quite stable to the resonance frequency. Overall, the Nb₂O₅-Al₂O₃ composite oxide film is a suitable material for thin film capacitors.     

Influence of calcination temperature on luminescent properties of Sr3Al2O6:Eu, Dy phosphors prepared by sol–gel-combustion processing

The detailed preparation process of Eu²⁺ and Dy³⁺ ion co-doped Sr₃Al₂O₆ phosphor powders with red long afterglow by sol–gel-combustion method in the reducing atmosphere is reported. X-ray diffraction, scanning electron microscopy and photoluminescence spectroscopy are used to investigate the effects of synthesis temperature on the crystal characteristics, morphology and luminescent properties of the as-synthesized Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors. The results reveal that Sr₃Al₂O₆ crystallizes completely when the combustion ash is sintered at 1200 °C. The excitation and the emission spectra indicate that the excitation broad-band lies chiefly in visible range and the phosphor powders emit strong light at 618 nm under the excitation of 472 nm. The light intensity and the light-lasting time of Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors are increased when increasing the calcination temperatures from 1050 to 1200 °C. The afterglow of Sr₃Al₂O₆:Eu²⁺, Dy³⁺ phosphors sintered at 1200 °C lasts for over 600 s when the excited source is cut off. The red emission mechanism is discussed according to the effect of nephelauxetic and crystal field on the 4f⁶5d¹ → 4f⁷ transition of the Eu²⁺ ions.     

Combined spectroscopic ellipsometry and attenuated total reflection analyses of Al2O3/HfO2 nanolaminates

The microstructure of thin HfO₂-Al₂O₃ nanolaminate high κ dielectric stacks grown by atomic vapor deposition has been studied by attenuated total reflection spectroscopy (ATR) and 8 eV spectroscopic ellipsometry (SE). The presence of Al₂O₃ below HfO₂ prevents the crystallisation of HfO₂ if an appropriate thickness is used, which depends on the HfO₂ thickness. A thicker Al₂O₃ is required for thicker HfO₂ layers. If crystallisation does occur, we show that the HfO₂ signature in both ATR and 8 eV SE spectra allows the detection of monoclinic crystallites embedded in an amorphous phase.     

Preparation of TeO2 based thin films by nonhydrolytic sol–gel process

To solve the problem of the extremely high hydrolytic reactivity of tellurium alkoxides in hydrolytic sol–gel method, the nonhydrolytic sol–gel process has been applied as a novel route for producing TeO₂ based thin films. The transition of nonhydrolytic sol–gel was monitored by means of ¹H NMR, FT-IR and Raman techniques. These results show that the formation of Te–O–Te bonds in gel networks mainly resulted from the nonhydrolytic cross-condensation reaction between different Te–OR groups. The decomposition process and structure evolution of the nonhydrolytic gel products were investigated and managed. Results from DTA and XRD analyses show that metallic tellurium, β-TeO₂ and α-TeO₂ phase appeared in the film during heat-treatment process at around 300, 350 and 400 °C, respectively. The formation of metallic tellurium can be alleviated through preheating the gel films under O₂ atmosphere or by additions of the second component. Crystallization of α-TeO₂ could be retarded by additions of TiO₂ or Al₂O₃, and the transparent, homogeneous amorphous TeO₂ based thin films were obtained by the methods above. The nonhydrolytic sol–gel process developed in this study offers a simple and practical method for fabricating TeO₂ based thin film devices.     

Ferrimagnetic and semiconducting CaCu3Fe2Sb2O12 by first principles

CaCu₃Fe₂Sb₂O₁₂ is mechanically stable, thermodynamically stable at pressures above 18 GPa. Both GGA and GGA + U methods predict that it is a ferrimagnetic semiconductor with Fe³⁺ in high spin state (S = 5/2). The coupling of Fe–Cu is antiferromagnetic, while that of Cu–Cu is ferromagnetic. The calculated total spin moment is 6.17 μ_B.     

Microstructure and electrical properties of Al2O3-ZrO2 composite films for gate dielectric applications

Al₂O₃-ZrO₂ composite films were fabricated on Si by ultrahigh vacuum electron-beam coevaporation. The crystallization temperature, surface morphology, structural characteristics and electrical properties of the annealed films are investigated. Our results indicate that the amorphous and mixed structure is maintained up to an annealing temperature of 900 °C, which is much higher than that of pure ZrO₂ film, and the interfacial oxide layer thickness does not increase after annealing at 900 °C. However, a portion of the Al₂O₃-ZrO₂ film becomes polycrystalline after 1000 °C annealing and interfacial broadening is observed. Possible explanations are given to explain our observations. A dielectric constant of 20.1 is calculated from the 900 °C-annealed ZrO₂-Al₂O₃ film based on high-frequency capacitance-voltage measurements. This dielectric characteristic shows an equivalent oxide thickness (EOT) as low as 1.94 nm. An extremely low leakage current density of ∼2×10⁻⁷ A/cm² at a gate voltage of 1 V and low interface state density are also observed in the dielectric film.     

Nano-crystalline LaFeO3 powders synthesized by the citrate–gel method

A novel sol–gel process was developed for preparing nano-sized, perovskite-type LaFeO₃ powder by the thermal decomposition of the gel-complex of LaFe–(C₆H₈O₇·H₂O). The structural evolution has been systematically investigated by X-ray diffraction (XRD), differential thermal analysis (DTA) and thermogravimetric analysis (TGA). Perovskite powder of  25 nm size could be obtained at a temperature of  600 °C without formation of any secondary phases of La₂O₃ and Fe₂O₃ single oxides and no requirements of high temperature/vacuum/pH control etc. Analysis of the X-ray powder diffraction data showed a decrease in the value of lattice strains with increasing decomposition temperature, whereas the particle size increases with increasing decomposition temperature.     

Observation of broadband infrared luminescence in a novel Bi-doped P2O5-B2O3-Al2O3 glass

A novel Bi-doped P₂O₅-B₂O₃-Al₂O₃ glass was investigated, and strong broadband NIR (near infrared) luminescence was observed when the sample was excited by 445 nm, 532 nm, 808 nm and 980 nm lasers, respectively. The max FWHM with 312 nm, the lifetime with 580 μs and the σ_emτ product with 5.3 × 10^− 24 cm² s were obtained which indicates that this glass is a promising material for broadband optical amplifier and tunable laser. The effect of the introduction of B₂O₃ on the glass structure and Bi-ions illuminant mechanism were discussed and analyzed. It is suggested that the introduction of B₂O₃ makes the glass structure closer, and the broadband NIR emission derives from Bi⁰:²D_3/2 → ⁴S_3/2 and Bi⁺:³P₁ → ³P₀ transitions.     

Preparation of double-doped BaCeO3 and its application in the synthesis of ammonia at atmospheric pressure

Perovskite-type oxides BaCe_0.90Sm_0.10O_3−δ (BCS) and BaCe_0.80Gd_0.10Sm_0.10O_3−δ (BCGS) were synthesized by the sol–gel method and characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Using the sintered samples as solid electrolytes and silver–palladium alloy as electrodes, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in a solid-state proton-conducting cell reactor. The maximum rate of production of ammonia was 5.82×10⁻⁹ mol s⁻¹ cm⁻².     

Lightweight geopolymer made of highly porous siliceous materials with various Na2O/Al2O3 and SiO2/Al2O3 ratios

The syntheses of lightweight geopolymeric materials from highly porous siliceous materials viz. diatomaceous earth (DE) and rice husk ash (RHA) with high starting SiO₂/Al₂O₃ ratios of 13.0-33.5 and Na₂O/Al₂O₃ ratios of 0.66-3.0 were studied. The effects of fineness and calcination temperature of DE, concentrations of NaOH and KOH, DE to RHA ratio; curing temperature and time on the mechanical properties and microstructures of the geopolymer pastes were investigated. The results indicated that the optimum calcination temperature of DE was 800 °C. Increasing fineness of DE and starting Na₂O/Al₂O₃ ratio resulted in an increase in compressive strength of geopolymer paste. Geopolymer pastes activated with NaOH gave higher compressive strengths than those with KOH. The optimum curing temperature and time were 75 °C and 5 days. The lightweight geopolymer material with mean bulk density of 0.88 g/cm³ and compressive strength of 15 kg/cm² was obtained. Incorporation of 40% RHA to increase starting SiO₂/Al₂O₃ and Na₂O/Al₂O₃ ratios to 22.5 and 1.7 and enhanced the compressive strength of geopolymer paste to 24 kg/cm² with only a marginal increase of bulk density to 1.01 g/cm³. However, the geopolymer materials with high Na₂O/Al₂O₃ (>1.5) were not stable in water submersion.     

Tensile strength and microstructure of Al2O3-ZrO2 hypo-eutectic fibers

Al₂O₃-ZrO₂(Y₂O₃) eutectic materials possess good fracture strengths and creep resistance. Increased Al₂O₃ content is one means to further improve creep resistance. The objective of this study is to examine fracture strength of Al₂O₃-rich (hypoeutectic) compositions at varying Y₂O₃ contents. Fibers 160-220 μm in diameter with 68 m/o Al₂O₃ and 1.1-7.6 m/o Y₂O₃ (30.5 to 16 m/o ZrO₂) were directionally solidified at 0.11 mm/s using the laser-heated float-zone process. Defect populations increased in size and severity with higher Y₂O₃ contents. However, fibers maintained 1 GPa fracture strength in the presence of numerous pores and shrinkage cavities, which extend with crack-like morphology along the fiber axis.     

Doping-induced microstructural, textural and optical properties of In2Ti1−xVxO5+δ semiconductors and their role in the photocatalytic splitting of water

The physicochemical properties of V-doped indium titanates (In₂Ti_1−xV_xO_5+δ, 0.0 ≤ x ≤ 0.2) were investigated by using XPS, powder XRD, UV–vis, SEM and luminescence spectroscopy techniques. The Rietveld refinement of XRD data revealed that even though the V-containing samples were isostructural with In₂TiO₅ (orthorhombic space group Pnma), a systematic x-dependent variation was noticeable in the Ti–O bond lengths in [TiO₆] octahedral units, cell parameters and in the value of δ. XPS results confirmed the coexistence of V⁵⁺ and V⁴⁺ states, leading thereby to an enhancement in oxygen non-stoichiometry in the doped samples. A loading-dependent progressive shift from 400 to 750 nm was also observed in the onset of the absorption edge, indicating a significant narrowing of the band gap. Furthermore, the samples with higher V-content were comprised of the grain clusters having larger size and an irregular shape. The UV–vis, photoluminescence and thermoluminescence studies indicate that the doping-induced lattice defects may give rise to certain closely spaced acceptor/donor energy levels in between the band gap of host matrix. The indium titanates are found to serve as stable photocatalysts for water splitting under visible light, where oxygen was the major reaction product. The role of microstructural and morphological properties in the photocatalytic activity is discussed.     

CuO-TiO_2复合助剂低温烧结氧化铝陶瓷的机理(Ⅱ)

固定CuO(0.4%)和TiO₂(4%)的添加量、改变TiO₂(0--32%)和CuO(0--3.2%)的添加量(质量分数, 下同), 研究了CuO--TiO₂复合助剂对氧化铝陶瓷烧结性能、微观结构、物相组成以及烧结激活能的影响, 以揭示复合助剂的低温烧结机理。结果表明, 在1150--1200℃TiO₂固溶入Al₂O₃生成Al₂Ti₇O₁₅相, 并生成大量正离子空位提高了扩散系数, 从而以固相反应烧结的作用机理促进了氧化铝陶瓷的致密化; TiO₂在Al₂O₃中的极限固溶度为2%--4%, 超过固溶极限的TiO₂对陶瓷烧结没有促进作用; 添加适量的CuO(0.4%)可将TiO₂在Al₂O₃中的固溶温度降低到1100℃以下, 并以液相润湿作用促进氧化铝陶瓷的致密烧结。陶瓷烧结激活能的计算结果定量地印证了上述烧结机理; 当在Al₂O₃中添加4%的TiO₂和2.4%的CuO, 可将烧结激活能降低到54.15 kJ ? mol-1。