一种基于DSP和FPGA的雷达信号处理机设计

研究了基于多片DSP和FPGA、CPLD等可编程器件的雷达信号处理机的设计方法，在对雷达信号处理算法与体系结构的映射进行讨论的基础上，以ADSP21161和V2 FPGA以及XC9500系列CPLD为实例，介绍了信号处理机的具体设计与实现，该结构实时信号处理能力强，具有较强的通用性。     

一种基于TMS320C6416和FPGA的实时雷达信号模拟器设计

提出一种基于高速数字信号处理器(TMS320C6416)和FPGA(EP1C6)的实时雷达信号模拟器的设计方案。该方案采用计算机产生雷达回波数据,通过CompactPCI总线或者USB总线以DMA方式将数据传输到DSP中,通过DSP对数据进行再处理,形成更为丰富的雷达回波信号数据,经过数模转换成雷达视频回波信号,供雷达信号处理机调试使用。     

风廓线雷达信号处理机设计与实现

建立一种雷达信号处理机双DSP＋FPGA系统架构，对风廓线雷达信号处理机的功能和软硬件设计作了详细讨论。通过对系统的研制实践表明：基于一体化设计思想，采用模块化的硬件系统设计和功能化的应用软件设计是快速开发现代信息处理设备的有效方法。     

一种二维有源相控阵雷达信号处理机的设计

为了满足二维有源相控阵雷达信号处理机快速和实时性的需求,本文设计和实现了一种基于DSP和FPGA的二维有源相扫雷达信号处理机.本信号处理机采用多核DSP搭配FPGA的设计架构,实现了高性能实时信号处理平台,可满足雷达系统算法需求,具有较高的实用性.     

基于FPGA和DSP的被动雷达信号分选处理器的设计

介绍了基于DSP和FPGA的末制导雷达信号处理机分选软硬件的设计及实现,该系统以一片DSP为主处理器,配合FPGA及其他外围电路用于实现雷达信号的分选跟踪。由于采用DSP＋FPGA,不仅很好地实现了实时性,而且系统集成度高,可靠性好,易于修改,使用灵活,因此具有较强的实用价值和参考价值。     

新一代通用机载雷达信号处理机的实现

为提升机栽雷达信号处理机多通道、并行、大运算量的实时处理能力,基于DSP+FPGA结构采用模块化设计构建的新一代雷达信号处理机,符合"通用化、系列化、标准化"的要求,并且根据软件雷达的思想,通过改变算法和软件,使其适应不同的工作环境和任务需要.高性能DSP TS201和大容量FPGA为核心实现的新型通用机载雷达信号处理机的通用平台,主要实现数字脉压、FFT,CFAR,SAR/ISAR等算法.     

基于TMS6678和XC6VLX240的通用雷达信号处理板设计

研究一种基于DSP(TMS6678)和FPGA(XC6VLX240)的通用雷达信号处理板的设计。利用FPGA(XC6VLX240)支持并行处理和IP核的特点,可快速实现多通道雷达信号的下变频(DDC)和数字脉冲压缩(DPC)等前期算法处理;利用8核DSP(TMS6678)支持浮点处理和多种高速接口类型的优势,可快速实现多目标检测(MTD)等后期算法处理及高速数据传输。最终利用SRIO交换机(TSI578)实现通用雷达信号处理板之间的高速数据通讯。     

新一代通用机载雷达信号处理机的实现

为提升机载雷达信号处理机多通道、并行、大运算量的实时处理能力,基于DSP＋FPGA结构采用模块化设计构建的新一代雷达信号处理机,符合“通用化、系列化、标准化”的要求,并且根据软件雷达的思想,通过改变算法和软件．使其适应不同的工作环境和任务需要。高性能DSPTS201和大容量FPGA为核心实现的新型通用机栽雷达信号处理机的通用平台。主要实现数字脉压、FFT,CFAR,SAR／ISAR等算法。     

基于CPCI总线的通用FPGA信号处理板的设计

雷达信号处理的庞大数据量和高实时性要求,决定了雷达信号处理系统的复杂性及设计难度.由于通用信号处理板只需对软件进行升级,从而大大降低了系统设计的时间和成本,因此成为雷达信号处理系统设计的发展趋势.FPGA在实时处理上相对DSP更具优势,更适用于雷达信号处理中.文中采用Altera高端FGPA产品Stratix Ⅲ设计了基于CPCI总线的通用FPGA信号处理板,并实际应用于某雷达系统中.     

基于FPGA的多路光纤数据同步技术

针对当前相控阵雷达数字TR组件的设计,提出了一种基于光纤信号的同步方法,使得数据传输和雷达主触发同步集成在同一根光纤中,从而省去了传统采用专用触发进行同步控制的大量触发线,简化了相控阵系统有源面阵设计。经在实验板FPGA验证,该光纤同步技术能有效实现多板多片FPGA间的信号同步控制及处理,为后续的数字相控阵有源面阵的同步设计提供了更多的选择空间。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.