Ce掺杂Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9-0.4wt%Cr_2O_3高温无铅压电陶瓷的研究

采用固相法制备了Na0.25K0.25Bi2.5Nb2O9-0.4wt%Cr2O3-xwt%CeO2(x=0.00~1.00)高温无铅压电陶瓷,研究了Ce掺杂对该系列陶瓷微观结构及电性能的影响。结果表明所有样品均为单一的铋层状结构陶瓷,适量的Ce掺杂明显改善了陶瓷的压电与铁电性能,降低了陶瓷的电导率和介电损耗。当掺杂量x=0.50时,样品具有最佳性能:d33=27 pC/N,tanδ=0.09%,kp=7.97%,Qm=2637,Tc=656℃,Ec=46 kV/cm和Pr=4.4μC/cm2,表明该材料在高温领域内具有良好的应用前景。     

Co、Mn共掺杂铋层状Na_(0.5)Bi_(4.5)Ti_4O_(15)无铅压电陶瓷的显微结构及电性能

采用固相法制备Na0.5Bi4.5Ti4O15+x%Co2O3+y%MnCO3(NBT-CM-x)(y=0.1x)铋层状无铅压电陶瓷,研究了Co、Mn共掺杂对Na0.5Bi4.5Ti4O15陶瓷显微结构和电性能的影响。结果表明:所有样品均为铋层状结构;Co、Mn共掺杂能促进陶瓷晶粒生长;随Co、Mn共掺杂量的增加,Curie温度TC逐渐升高(均在635℃以上);Cole-Cole图出现2个圆弧,表明存在晶粒和晶界效应;适量Co、Mn共掺杂提高了Na0.5Bi4.5Ti4O15陶瓷的压电常数d33、剩余极化强度Pr、机械品质因数Qm和相对介电常数εr,降低了直流电导率σDC和介电损耗tanδ。当x=3.0时,NBT-CM-x陶瓷的综合性能最佳:d33=24pC/N,Pr=11.70μC/cm2,Qm=3 117,εr=198,tanδ=0.19%,kp=9.9%,kt=14.7%,表明该陶瓷材料具有良好的高温应用前景。     

Ce掺杂0.85Bi_4Ti_3O_(12)-0.15LiNbO_3铋层状铁电陶瓷的显微结构与性能(英文)

采用固相法制备CeO2掺杂改性0.85Bi4Ti3O12-0.15LiNbO3(BTO-LN)铋层状压电陶瓷。借助于X射线衍射和扫描电子显微镜研究了CeO2掺量与BTO-LN陶瓷晶体结构和电性能的关系。结果表明:所有陶瓷样品均为单一的正交相结构;随CeO2掺量的增加,陶瓷的晶粒尺寸变大,Curie温度TC由653℃下降到617℃;CeO2掺杂提高了样品的压电性能,压电常数d33随CeO2掺量的增加先增大后减小,相对介电常数εr表现出相反的变化趋势;当CeO2的掺入量为0.75%时,样品的电性能最佳,即d33=25pC/N,机械品质因数Qm=2 895,介电损耗tanδ=0.10%,TC=617℃。     

La^(3+)掺杂对CaBi_(2)Nb_(2)O_(9)压电陶瓷结构与电学性能的影响EI北大核心CSCD

采用传统固相法制备Ca1-xLaxBi_(2)Nb_(2)O_(9)(CBN-xLa,x=0.00,0.02,0.04,0.06,0.08,0.10)陶瓷,研究了La^(3+)掺杂对CaBi_(2)Nb_(2)O_(9)陶瓷的晶体结构、微观形貌、介电性能、压电及铁电性能以及高温导电机制的影响.结果表明,适量的La^(3+)取代Ca^(2+)优化了晶体结构,细化晶粒,通过施主掺杂降低了氧空位,有效地改善了CaBi_(2)Nb_(2)O_(9)陶瓷的电性能.其中Ca0.92La0.08Bi_(2)Nb_(2)O_(9)是最优组分,获得压电性能d33、Curie温度T_(C)和剩余极化强度2Pr分别为11.7 pC/N、905℃和9.51μC/cm^(2),并且在550℃条件下的tanδ为3.87%,退火处理后,所有组分样品在800℃条件下均保持较稳定压电性能.复阻抗谱表明阻抗是由晶粒晶界共同作用,导电机制与氧空位有密切关系,且La^(3+)能有效提高高温电阻率,使得其在高温传感器中具有应用潜力.     

Sm掺杂对Ba_4La_(19.33)Ti_(18)O_(54)陶瓷结构和介电性能的影响分析

主要研究了不同Sm掺杂浓度对Ba4La19.33Ti18O54陶瓷的微波介电性能和微观结构的影响。首先利用常规固相反应技术制备了Sm含量y分别为0.0,0.1,0.3,0.5和0.7的五种Ba4(La1-ySmy)9.33Ti18O54陶瓷样品;室温下在0.3～3.0GHz频率范围内,利用网格分析仪测量了这些样品的介电常数和介电损耗因子;结果表明随着Sm掺杂含量的增大,样品介电损耗明显减小,而介电常数只有微小减少。当Sm掺杂含量y=0.5时,样品的介电性能最好。此外,还利用X射线衍射仪和扫描电子显微镜研究了样品的微观结构及随微波介电性能的变化。     

Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9-xCaTiO_3铋层状陶瓷的结构与性能

采用传统固相法制备Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9-x mol%CaTiO_3(NKBN-CT,x=0,0.7,1.0,2.0,3.0,4.0)铋层状无铅压电陶瓷材料。本文系统研究了CaTiO_3掺杂对Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9基陶瓷物相结构、微观结构以及电性能的影响。结果表明:所有陶瓷材料样品均为单一的铋层状结构。随着CaTiO_3掺量的增加,Curie温度T_c呈增高趋势(653~665°C),压电常数d_(33)先增大后减小;当x=1.0时,样品的电性能达到最佳值,即d_(33)=25pC/N,介电损耗tanδ=0.42%,机械品质因数Q_m=2845,T_c=659℃。退极化研究表明NKBN-CT陶瓷样品的压电性能具有良好的热稳定性,说明CaTiO_3掺杂改性Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9基系列陶瓷具有高温领域应用的潜力。     

无铅压电陶瓷的研究与展望

综述了无铅压电陶瓷研究开发的相关进展,着重介绍了BaTiO3基无铅压电陶瓷、Bi1/2Na1/2TiO3(BNT)基无铅压电陶瓷、NaNbO3基无铅压电陶瓷、铋层状结构无铅压电陶瓷及钨青铜结构无铅压电陶瓷等不同陶瓷种类的相关体系、制备方法及压电铁电性能,并对其应用及发展前景进行了展望。     

铋掺杂对铌酸钾钠无铅压电陶瓷结构和性能的影响

用常压烧结法制备铋掺杂铌酸钾钠无铅压电陶瓷(K0.5Na0.5)1-3xBixNbO3(KNBN)。研究不同铋掺杂量对KNN陶瓷结构、形貌、致密度及电学性能的影响。结果表明:在1 120℃烧结的含铋量为1%(摩尔分数)的陶瓷表现出最好的铁电和压电性能及较好的介电性能,即压电常数最大121pC/N,P-E回线形状达到饱和,且剩余极化为12.67μC/cm2,矫顽场Ec为13.58kV/cm,介电常数为575,损耗为5.82%(频率为1kHz)。陶瓷样品在131℃从正交结构转变到四方结构,Curie温度为400℃。     

锰掺杂无铅压电陶瓷(Bi0.5Na0.5)0.9Ba0.07Sr0.03TiO3的结构和电学性能

采用传统陶瓷工艺制备掺MnO2的(Bi0.5Na0.5)0.9Ba0.07Sr0.03TiO3(BNBST)无铅压电陶瓷。锰掺杂(MnO2摩尔掺量x=0～1.25%)可以提高陶瓷的烧结性能,在1150℃烧结,可以得到致密陶瓷和纯的钙钛矿相。X射线衍射显示:室温、0.20x0.75时,形成四方相与三方相共存的准同型相界(morphotropic phase boundary,MPB),且x=0.25时,锰掺杂的BNBST陶瓷表现出优良的性能,其中压电常数d33=157pC/N,平面机电耦合系数kp=33%,机械品质因数Qm=364,相对介电常数εr=843,介电损耗tanδ=2%。这些结果确认了MPB组成与x之间的相互关系,并为设计新型压电材料提供方法。     

Nd^(3+)掺Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9压电陶瓷的结构与性能EI北大核心CSCD

采用固相法制备Na_(0.25)K_(0.25)Bi_(2.5–x)Nd_xNb_2O_9(NKBN–xNd^(3+),0≤x≤0.40,x为摩尔分数)铋层状无铅压电陶瓷,研究了不同Nd^(3+)掺杂量对NKBN–x Nd陶瓷显微结构、电学性能的影响及NKBN–0.20Nd^(3+)陶瓷高温下的电导行为。结果表明:所有样品均为单一的铋层状结构;当Nd^(3+)的掺杂量x为0.02时,样品的晶粒尺寸减小并趋于均匀,致密度提高;适量的Nd^(3+)掺杂能降低样品的介电损耗,提高NKBN陶瓷的压电常数d33。NKBN–0.20Nd^(3+)陶瓷样品的电学性能最佳:压电常数d_(33)=24 p C/N,机械品质因数Q_m=2 449,tanδ=0.40%,2P_r=1.11μC/cm^2。NKBN–0.20Nd^(3+)样品的阻抗谱表明:在高温区域陶瓷的晶粒对电传导起主要作用,当温度高于600℃时,样品主要表现为本征电导,NKBN–0.20Nd^(3+)和NKBN的电导活化能分别为1.85和1.64 e V。     

Nb5+掺杂改性CaBi4Ti4O15压电陶瓷的研究

采用传统固相烧结法,制备了CaBi4Ti(1-x)NbxO1(5x=0.00-0.05,CBT-N)系铋层状结构无铅压电陶瓷。研究了Nb5+掺杂对CBT压电陶瓷压电与介电性能的影响。研究结果表明:添加Nb5+离子,改善了CBT陶瓷的烧结特性,提高了瓷体的致密度。Nb2O5的引入降低了CBT系列陶瓷的介质损耗,改善了陶瓷的压电与介电性能。当掺入量x=0.04(CaBi4Ti0.96Nb0.04O15)时制备的CBT基铋层状压电陶瓷具有优异的压电性能:d33=14pC/N,Qm=3086,εr=212,tanδ=0.0041,kt/kp=1.681。     

Ti不足对Na_（0.5）Bi_（4.5）Ti_（4-x）O_（15）陶瓷性能的影响

用传统固相烧结工艺制备致密Na0.5Bi4.5Ti4-xO15（x=0,0.02,0.04,0.06,0.08）系列铋层结构压电陶瓷,研究该系列陶瓷的微观结构、介电性质和压电性质。结果表明：少量Ti不足可以促进Na0.5Bi4.5Ti4O15陶瓷晶粒长大并使陶瓷的压电性能获得较大提高;随着x增大,陶瓷的压电常数和机电耦...     

BNBMT无铅压电陶瓷的制备及性能研究

本文采用新型溶胶-凝胶制粉技术和传统陶瓷生产工艺制备了0.93Bi0.5Na0.5TiO3-0.07Ba1-xMgxTiO3（简称BNBMT100x）体系无铅压电陶瓷,并对BNBMT陶瓷的晶相特征及其介电和压电性能进行了讨论。XRD分析表明,陶瓷样品均形成了单一的钙钛矿结构固溶体;Mg的加入对陶瓷的介电、压电性能有显著影响;陶瓷的铁电-顺电相变峰显著降低、展宽;介电损耗在室温至200℃范围内较平缓。当x=0.04时,机电耦合系数kp和kt最大,分别为16%和19%,压电常数d33值为111pC/N。     

钨离子掺杂对Ca0.7La0.3Bi4(Ti1-xWx)4O15陶瓷性能的影响

用固相法研究了钨离子(W6 )掺杂对铋层状钛酸铋钙镧[Ca0.7La0.3Bi4(Ti1-xWx)4O15,CLBTWx]陶瓷的铁电性能、介电性能和压电性能的影响,得到了W6 掺量与铋层状CLBTWx陶瓷性能的关系.用X射线衍射和扫描电镜研究了W6 掺量对铋层状CLBTWx陶瓷微观结构和物相的影响,探讨了W6 掺杂改性的机理.结果表明:随着W6 掺量的增加,CLBTWx陶瓷的介电常数(ε)先增大后减小;介质损耗(tanδ)先减小后增大;压电应变常数(d33)先增大后减小;剩余极化强度(Pr)先增大后减小然后再增大再减小;矫顽场(Ec)变化规律与Pr的相同.当W6 掺量为0.025mol时,可得到综合性能好的无铅铋层状CLBTWx陶瓷,其烧结温度为1 120～1 140℃时,CLBTWx陶瓷的ε=183.15;tanδ=0.00446;d33=14×10-12C/N;2Pr=26.7μC/cm2;2Ec=220kV/cm.该类材料适合于制备铁电随机存取存储器和高温高频压电器件.W6 掺杂从生成钙空位或铋空位、形成焦绿石相、促进陶瓷致密化、偏析晶界影响陶瓷晶粒的均匀生长等方面来影响铋层状CLBTWx陶瓷性能和结构.     

ABO3型化合物掺杂KNN基无铅压电陶瓷的研究进展

KNN基无铅压电陶瓷以其较高的居里温度、低的介电常数和高的机电耦合系数等特点,近年来备受研究人员的关注。本文结合近几年来相关文献的报道,综合分析了在KNN基无铅压电陶瓷中添加ABO₃型合物对其电学性能的影响,展望了KNN基无铅压电陶瓷将来的发展趋势。     

Enhanced piezoelectric properties of Mn-modified Bi5Ti3FeO15 for high-temperature applications

Bi₅Ti₃FeO₁₅ (BTF) has recently attracted considerable interest as a typical multiferroic oxide, wherein ferroelectric and magnetic orders coexist. The ferroelectric order of BTF implies its piezoelectricity, because a ferroelectric must be a piezoelectric. However, no extensive studies have been carried out on the piezoelectric properties of BTF. Considering its high ferroelectric-paraelectric phase transition temperature (T_c ~ 761°C), it is necessary to analyze the piezoelectricity and thermal stabilities of BTF, a promising high-temperature piezoelectric material. In this study, lightly manganese-modified BTF polycrystalline oxides are fabricated by substituting manganese ions into Fe³⁺ sites via the conventional solid-state reaction method. X-ray diffraction and Raman spectroscopy analyses reveal that the resultant manganese-modified BTF has an Aurivillius-type structure with m = 4, and that the substitutions of Fe by Mn lead to a distortion of BO₆. The temperature-dependent dielectric properties and direct-current (DC) resistivity measurements indicate that the Mn ions can significantly reduce the dielectric loss tanδ and increase the DC resistivity. The piezoelectricity of BTF is confirmed by piezoelectric constant d₃₃ measurements; it exhibits a piezoelectric constant d₃₃ of 7 pC/N. Remarkably, BTF with 4 mol% of Mn (BTF-4Mn) exhibits a large d₃₃ of 23 pC/N, three times that of unmodified BTF, whereas the Curie temperature T_c is almost unchanged, ~765°C. The increased piezoelectric performance can be attributed to the crystal lattice distortion, decreased dielectric loss tanδ, and increased DC resistivity. Additionally, BTF-4Mn exhibits good thermal stabilities of the electromechanical coupling characteristics, which demonstrates that manganese-modified BTF oxides are promising materials for the use in high-temperature piezoelectric sensors.     

Enhanced piezoelectric properties of Aurivillius-type sodium lanthanum bismuth titanate (Na0.5La0.5Bi4Ti4O15) by B-site manganese modification

The Aurivillius-type bismuth layer-structured ferroelectrics (BLSFs) sodium lanthanum bismuth titanate (Na_0.5La_0.5Bi₄Ti₄O₁₅, NLBT) polycrystalline ceramics with 0.0–0.4 wt% MnO₂ were synthesized using conventional solid-state processing. Phase analyses were performed by X-ray powder diffraction (XRPD), and the microstructural morphology was assessed by scanning electron microscopy (SEM). The dielectric and piezoelectric properties of the manganese-modified NLBT ceramics were investigated in detail. The results show that manganese is very effective in promoting the piezoelectric activities of NLBT ceramics, and the reasons for piezoelectric activities enhancement by manganese modification are explained. The NLBT ceramics modified with 0.2 wt% MnO₂ (NLBT-Mn2) possess good piezoelectric properties, with a piezoelectric coefficient d₃₃ of 28 pC/N. This value is the highest value among the modified NLBT-based piezoelectric ceramics examined. The temperature-dependent dielectric spectra show that the Curie temperature T_c of the manganese-modified NLBT ceramics is slightly higher than that of the pure NLBT ceramics. Thermal annealing analysis revealed that the manganese-modified NLBT ceramics possess good thermal stabilities up to 500 °C. These results demonstrate that the manganese-modified NLBT ceramics are promising materials for high temperature piezoelectric applications.     

Natural-superlattice structured CaBi2Nb2O9-Bi4Ti3O12 ferroelectric thin films

Natural-superlattice-structured/intergrowth CaBi₂Nb₂O₉-Bi₄Ti₃O₁₂ (CBNO-BIT) ferroelectric thin films were successfully prepared via a magnetron sputtering process. XRD and TEM analysis revealed the [Bi₂O₂-(CaNb₂O₇)-Bi₂O₂-(Bi₂Ti₃O₁₀)]_n intergrowth structure of the film, as well as a (200)/(020) texture. XPS and EDS results confirmed that the film composition is close to the chemical stoichiometry. With its microstructure being successfully tailored at the nanoscale, the CBNO-BIT film exhibits good electrical properties, including a large dielectric constant (ε_r ∼390), a high piezoelectric coefficient (d₃₃ ∼90 pm/V) as well as a high energy storage density (W_E ∼76 J/cm³). Finally, the intergrowth nature of the film was verified by the measured temperature-dependent dielectric response (C-T).     

(1-x)(Bi1/2Na1/2)0.900Ba0.088Sr0.012TiO3-x(Bi1/2K1/2)TiO3无铅压电陶瓷的电学和力学性能

利用常规烧结方法制备出了多种A位离子掺杂的钛酸铋纳[(Bi1/2Na1/2)TiO3,BNT]无铅压电陶瓷.对BNT基陶瓷的电学性能和力学性能进行了研究.在(1-x)(Bi1/2Na1/2)0.900Ba0.088Sr0.012TiO3-x(Bi1/2K1/2)TiO3(x=0-0.14)陶瓷体系中,当x=0.10时,可获得最大压电常数(168pC/N).在1 kHz,这种陶瓷的介电常数、介电损耗和平面机电耦合系数分别为1 221,0.0361和0.2281.Curie温度随x的增加先增加,当x=0.12时,达到最高值(300℃),随后,当x值进一步增加,Curie温度降低.该种无铅压电陶瓷的Vickers硬度和断裂韧性分别为5.0GPa和2.0MP·m1/2,均高于Pb(Zr,Ti)O3陶瓷.     

（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3压电陶瓷的制备及性能研究

采用传统固相法制备了新型（1－x）Bi0．5（Na0．8K0．2）0．5TiO3－xKSbO3无铅压电陶瓷,利用XRD、 SEM等测试技术表征了该陶瓷的晶体结构、表面形貌、压电和介电性能。研究结果表明,在所研究的组成范围内陶瓷材料均能形成纯的钙钛矿固溶体。在室温下,当KSbO3的掺杂量为1％时,该体系表现出较好的介电性能：εr和tanδ分别为2231和0．055。