Relaxor Behavior and Dielectric Properties of MgTiO3-Doped BaZr0.35Ti0.65O3 Composite Ceramics for Tunable Applications

MgTiO₃-doped BaZr_0.35Ti_0.65O₃ (BZT) composite ceramics have been prepared by the conventional solid-state route. The dielectric nonlinear characteristics and relaxor behavior of these composite ceramics have been investigated. The secondary-phase BaMg₆Ti₆O₁₉ is formed among BZT composite ceramics with the increase of MgTiO₃. BZT composite ceramics show typical diffuse phase transition characteristic and ferroelectric relaxor behavior. The dielectric constant of BZT composite ceramics can be tailored from thousands to hundreds by manipulating the addition of MgTiO₃. The dielectric loss still keeps around 0.001 and the tunability is above 20% at a dc-applied electric field of 25 kV/cm. Suitable dielectric constant, low dielectric loss, and high tunability of this kind of composite ceramics can be useful for potential microwave tunable applications.     

Electrical Properties of ZnO-Bi2O3 Ceramics

The nonlinear volt-ampere characteristics and small-signal ac capacitance and resistance of sintered ZnO containing 0.5 mol% Bi₂O₃ were measured. Many of the electrical properties are related directly to the microstructure, which consists of conductive ZnO grains separated by a continuous amorphous Bl₂O₃, phase. The origin of the nonlinear conduction in the intergranular phase was confirmed by experiments with evaporated thin films. The proposed conduction mechanism in varistors containing ZnO and Bi₂O₃ is a combination of hopping and tunneling in the amorphous phase.     

Influence of Processing Conditions on the Electrical Properties of CaCu3Ti4O12 Ceramics

The electrical properties of a series of CaCu₃Ti₄O₁₂ ceramics prepared by the mixed oxide route and sintered at 1115°C in air for 1–24 h to produce different ceramic microstructures have been studied by Impedance Spectroscopy. As-fired ceramics are electrically heterogeneous, consisting of semiconducting grains and insulating grain boundaries, and can be modelled to a first approximation on an equivalent circuit based on two parallel RC elements connected in series. The grain boundary resistance and capacitance values vary as a function of sintering time and correlate with the ceramic microstructure based on the brickwork layer model for electroceramics. The large range of apparent high permittivity values for CaCu₃Ti₄O₁₂ ceramics is therefore attributed to variations in ceramic microstructure. The grain-boundary resistance decreases by three to four orders of magnitude after heat treatment in N₂ at 800°–1000°C but can be recovered to the original value by heat treatment in O₂ at 1000°C. The bulk resistivity decreases from ∼80 to 30 Ω·cm with increasing sintering time but is independent of heat treatment in N₂ or O₂ at 800°–1000°C. The origin of the bulk semiconductivity is discussed and appears to be related to partial decomposition of CaCu₃Ti₄O₁₂ at the high sintering temperatures required to form dense ceramics, and not to oxygen loss.     

Electric and Dielectric Properties of Nb-Doped CaCu3Ti4O12 Ceramics

Pure and Nb-substituted CaCu₃Ti_{4− x} Nb _x O_{12+ x /2} (CCTO, x =0, 0.02, 0.1, 0.2, 0.4) ceramics were prepared by a conventional solid-state sintering, and their electric and dielectric properties were investigated using an impedance analyzer. A single-phase CCTO was obtained up to x =0.2 Nb substitution and the lattice parameter increased with Nb substitution concentration. While the grain size decreased with Nb substitution, the resistivity of the grain boundary decreased. The dielectric constant increased with Nb substitution, and the highest value of ∼420 000 was observed in the x =0.2 Nb-substituted specimen at 10 kHz. The obtained electric and dielectric properties in Nb-substituted CCTO were discussed in terms of the internal barrier layer capacitor model, particularly focusing on a ratio of thickness of the grain boundary region to grain size.     

La2Ti2O7 Ceramics

La₂Ti₂O₇ powders were prepared using three different techniques. Single-phase material was obtained at 1150°C by calcination of mixed oxides, at 1000°C by molten salt synthesis, and at 850°C by evaporative decomposition of solutions. Particle sizes and morphologies of the powders differed substantially, as did the sintered microstructures and dielectric properties. Very dense (99%), translucent, grain-oriented lanthanum titanate was fabricated by hot-forging at 1300°C under a 200-kg load. Anisotropy was demonstrated by X-ray diffraction, scanning electron microscopy, thermal expansion, and dielectric measurements.     

Electrical Properties of Superlattice-Structured Bi4Ti3O12–PbBi4Ti4O15 Single Crystals

Single crystals of superlattice-structured ferroelectrics composed of Bi₄Ti₃O₁₂ and PbBi₄Ti₄O₁₅ were grown and the properties of polarization hysteresis and leakage current along the a -axis were investigated. Oxidation treatment led to a marked increase in leakage current at room temperature, showing that electron hole acts as a detrimental carrier for electrical conduction. A well-developed polarization hysteresis with a remanent polarization of 41 μC/cm² was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi₂O₂ layers.     

Factors Affecting the Electrical Conductivity of Donor-Doped Bi4Ti3O12 Piezoelectric Ceramics

High-temperature piezoelectric ceramics based on W⁶⁺-doped Bi₄Ti₃O₁₂ (W-BIT) were prepared by both the conventional mixing oxides and the chemical coprecipitation methods. Sintering was carried out between 800° and 1150°C in air. A rapid densification, >99% of the theoretical density (rho_th) at 900°C/2 h, took place in the chemically prepared W⁶⁺-doped Bi₄Ti₃O₁₂ ceramics, whereas conventionally prepared BIT-based materials achieved a lower maximum density, ∼94% of rho_th, at higher temperature (1050°C). The microstructure study revealed a platelike morphology in both materials. Platelike grains were larger in the conventionally prepared W-BIT-based materials. The sintering behavior could be related both to the agglomeration state of the calcined powders and to the enlargement of the platelets at high temperature. The W⁶⁺-doped BIT materials showed an electrical conductivity value 2-3 orders of magnitude lower than undoped samples. The electrical conductivity increased exponentially with the aspect ratio of the platelike grains. The addition of excess TiO₂ produced a further decrease of the electrical conductivity.     

Decomposition Reactions in CaCu3Ti4O12 Ceramics

CaCu₃Ti₄O₁₂ (CCTO) ceramics sintered in air at 1115°C for 3 and 24 h have been heat treated in N₂ at 1000°C. Surface layers develop on the outer regions of the ceramics, and a combination of X-ray diffraction and analytical electron microscopy has been used to establish the phase content of the layers. A model to explain the formation of the surface layers is proposed based on decomposition of CCTO into a mixture of CaTiO₃, TiO₂, and Cu₂O. The role of limited decomposition in the development of electrically inhomogeneous CCTO ceramics prepared at elevated temperatures in air is discussed.     

Synthesis and Structural, Ferroelectric, and Piezoelectric Properties of SrBi4Ti4O15 Ceramics

SrBi₄Ti₄O₁₅ ceramics were prepared via ordinary firing (OF) and hot forging (HF). Characterization using scanning electron microscopy and X-ray diffractometry shows platelike grains that were highly oriented ( F = 0.95) after hot forging. Ferroelectric, dielectric, and piezoelectric characterizations revealed that polarization reorientation was restricted to the ab plane of the orthorhombic structure, parallel to the (Bi₂O₂)²⁺ layers. The thickness coupling factor for OF samples was only half that for HF samples oriented parallel to the HF direction (in the ab-plane), as a consequence of poling restrictions in randomly oriented grains.     

Electrical Conduction Properties of LaP3O9 Glass and Glass–Ceramics

Electrical conduction properties of undoped and 1 mol% Sr-doped LaP₃O₉ glasses and glass–ceramics were investigated over the temperature range of 673–1123 K. Both the materials showed relatively low conductivities in the glassy state. However, the conductivity of the Sr-doped LaP₃O₉ glass significantly increased with a heat treatment above the crystallization temperature, while the conductivity of the undoped LaP₃O₉ glass did not improve even after the heat treatment. It was concluded that crystallization of the Sr-doped LaP₃O₉ glass induced protonic conduction and thus enhanced the conductivity. Electrical conduction properties of the Sr-doped LaP₃O₉ glass–ceramic fundamentally resembled those of the sintered crystalline Sr-doped LaP₃O₉.     

Effects of Ba6Ti17O40 on the Dielectric Properties of Nb-Doped BaTiO3 Ceramics

The dielectric properties, including the DC breakdown strength, of 1 mol% Nb⁵⁺-doped BaTiO₃ ceramics with different quantities of excess TiO₂ have been investigated. The breakdown strength was found to decrease with increasing TiO₂ content, but could not be readily explained by relative density and grain size effects. The decrease in the breakdown strength from a stoichiometric BaTiO₃ composition to samples with excess TiO₂ is believed to be due to the field enhancement effect (up to a factor of 1.40) at the BaTiO₃ matrix because of the presence of a Ba₆Ti₁₇O₄₀ second phase. The thermal expansion coefficient mismatch between the BaTiO₃ matrix phase and the Ba₆Ti₁₇O₄₀ phase may also result in a low breakdown strength. The dielectric properties of the pure Ba₆Ti₁₇O₄₀ phase were also investigated and are reported herein.     

Fabrication, Mechanical Properties, and Electrical Conductivity of Co3O4 Ceramics

Well-densified Co₃O₄ ceramics (98.3% of theoretical) have been fabricated by the combined use of hot pressing (800°C/I h/30 MPa) and hot isostatic pressing (880°C/2 h/196 MPa). Their Vickers hardness and fracture toughness are 10.3 GPa and 4.2 MPa·m^1/2, respectively. They exhibit a high electrical conductivity of 3.35 × 10' S·cm⁻¹ at 800°C.     

Grain-Oriented Bi4Ti3O12 Ferroelectric Ceramics Prepared by Magnetic Alignment

Grain-oriented ferroelectric ceramics are desirable for many applications, but developing a mass-production method for such kinds of ceramics remains a significant challenge. In the current study, we report a convenient approach combining magnetic alignment and gelcasting to prepare grain-oriented ceramics without applied pressure and templates. This method was found to be effective to prepare highly a–b plane-oriented Bi₄Ti₃O₁₂ ferroelectric ceramics and subsequently enhance the dielectric properties. We used the conventional ceramic process, i.e., solid-state synthesis, gelcasting forming technique, and pressureless sintering except for the application of a 10 T magnetic field. Indeed, such an approach should facilitate the mass production of large and dense grain-oriented ceramic materials.     

Bi2O3 Vaporization in Microwave-Sintered ZnO Varistors

Vaporization of Bi₂O₃ in microwave-sintered ZnO varistors is discussed in this study. The Bi₂O₃ vaporization of ZnO varistors sintered by a conventional electric furnace is also studied for comparison. The results show that the Bi₂O₃ vaporization in microwave-sintered ZnO varistors is more homogenous from the surface to the inside of the sample, which results from the special thermal gradient inside the microwave-sintered samples, and we also find out that the Bi₂O₃ vaporization directly affects the electrical properties of ZnO varistors. Microwave-sintered samples exhibit more excellent electrical properties than the conventional ones because the homogenous Bi₂O₃ vaporization leads to more uniform microstructures.     

Extended Defects in ZnO Ceramics Containing Bi4Ti3O12 Additive

Extended defects in ZnO ceramics containing, 6 wt% Bi₄Ti₃O₁₂ were studied by analytical electron microscopy. Apart from basal plane condensation stacking faults, which are also present in as-received ZnO, extended defects related to the presence of Bi₄Ti₃O₁₂ were observed. In samples sintered at 900°C they lie in the basal or in the prismatic     planes and they quite often form closed loops, whereas they form serpentine-shaped boundaries in samples sintered at 1200°C. Evidence is given that they are inversion boundaries. Their TEM image characteristics, as well as the unambiguous presence of Ti at the boundaries, suggest that they are formed due to the presence of 2-D coherent precipitates of Ti-rich (possibly Zn₂TiO₄-type spinel) phase.     

Effects of Sm2O3 and Gd2O3+ Nd2O3 on Electromechanical Properties of PbTiO3 Ceramics

The electromechanical properties of PbTiO₃ ceramics, modified by substitution of Sm or Gd + Nd (same average atomic radius as Sm) for Pb, were studied in the range of 6% to 14% substitution. The modified PbTiO₃ ceramics were stable, and the Curie temperature decreased linearly over this composition range. The 10% Sm composition had a large anisotropy in the coupling factor ratio, k _t / k _p , and a similar, but weaker, effect developed for 12% (1/2 Gd + 1/2 Nd). This indicates that other than average ion size may influence the electromechanical coupling factor ratio.     

Control of Functional Microstructure in WO3-Doped Bi4Ti3O12 Ceramics

Bi₄Ti₃O₁₂ (BIT) coprecipitated powders sinter in the presence of a transitory liquid phase, which strongly enhances the diffusion of matter and also the anisotropic growth of BIT grains. However, by coating the surface of BIT particles with WO₃ the aspect ratio of the platelets can be controlled. This, in addition to the donor effect of tungsten, finally leads to a decrease of the electrical conductivity of these ferroelectric ceramics.     

Grain Growth-Controlled Giant Permittivity in Soft Chemistry CaCu3Ti4O12 Ceramics

We report a dielectric constant of up to 5.4 × 10⁵ at room temperature and 1 kHz for CaCu₃Ti₄O₁₂ (CCTO) ceramics, derived from multiphase powders (coprecipitation products), made by a "chimie douce" (coprecipitation) method, and then sintered in air. The sintered products are pure-phase CCTO ceramics. The high dielectric constant is achieved by tuning the size of grains and the thickness of grain boundaries. The grain growth is controlled by varying the concentration of excess CuO in the initial powder (calcined coprecipitation products) between 1 and 3.1 wt%. The dielectric constant of pure CCTO ceramics increases with the initial CuO concentration, reaching its maximum at 2.4 wt% of CuO. A further increase of excess CuO in powders results in a permittivity decrease, accompanied by the formation of CuO as a separate phase in the sintered products. The unusual grain growth behavior is attributed to a eutectic reaction between CuO and TiO₂ present in the initial powder.     

Microstructure and Electrical Properties of Chemically Prepared Nb2O5-Doped SrTiO3 Ceramics

Chemically homogeneous SrTiO₃ powders of submicrometer size were obtained by alcohol dehydration and subsequent calcination of citrate/format solutions. Nb₂O₅-doped SrTiO₃ was prepared with various Sr:Ti ratios resulting in an anomalous increase in the dielectric constant ( K 'up to ∼8000) for donor-doped SrO-excess SrTiO₃. No semiconducting behavior was observed for donor-doped TiO₂-excess SrTiO₃ when fired in air. Therefore, a "brick-wall" type of microstructure was formed as a result of the excess SrO, giving rise to anomalously high dielectric constants.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.