一种新颖三元件补偿的微带线定向耦合器研究

提出了一种在传统的微带线定向耦合器两端和中间分别加入补偿电容(简称三元件补偿)的具有高定向性、低插入损耗、低反射损耗和较宽带宽的微带线定向耦合器结构,给出了物理模型,对该结构进行了理论分析,并设计制作和测量了该种耦合器。测量结果表明,该定向耦合器的耦合度为20dB,工作频带为2.5～3.5GHz,隔离度超过-40dB,反射损耗低于-24dB,插入损耗优于-0.25dB,性能指标明显优于传统结构的微带线定向耦合器。     

0.1 dB/cm waveguide losses in single-mode SOI rib waveguides

Waveguide losses as low as 0.1 dB/cm at a wavelength of /spl lambda/=1.3 /spl mu/m have been achieved in SOI rib waveguides fabricated by wet chemical etching. The single-mode waveguides have a large cross section yielding field mismatch losses to a standard single-mode fiber of only 0.17 dB/facet (both polarizations). Polarization independent fiber-chip-fiber insertion losses of 0.9 dB (best 0.5 dB) at a chip length of 60 mm have been measured.     

Fabrication of submillimeter-radius optical waveguide bends withanisotropic and isotropic wet chemical etchants

Wet chemical etchants suitable for making GaAs/AlGaAs single-mode optical waveguide bends with radii as low as 300 μm for excess bend losses of 1 dB/90° and propagation losses as low as 1 dB/cm at λ=1.5 μm are described. Additional bend losses due to modal mismatch resulting from etchant anisotropy are investigated, and it is shown that in many cases such anisotropy does not limit bend performance     

Low-loss phased-array based 4-channel wavelength demultiplexerintegrated with photodetectors

A 4-channel phased-array wavelength division demultiplexer with 1.8 nm channel spacing at 1.54 μm has been monolithically integrated with photodetectors in InP/InGaAsP. On chip losses are 3.5 to 4.5 dB. These are the lowest losses reported so far for demultiplexers monolithically integrated with photodetectors. Nearest neighbor crosstalk ranges from -12 to -21 dB     

一种新型双层微带定向耦合器

提出了一种新型双层微带结构的3 dB定向耦合器.此耦合器由两层带有耦合缝隙和寄生单元的介质板背对背放置.通过增加耦合面积和引入寄生单元补偿电容起到了均衡奇、偶模相速提高了耦合度,实现了宽频的3 dB紧耦合.通过优化设计,在频带范围内,此双层微带定向耦合器的定向性优于普通的耦合微带线定向耦合器.设计结果在450～860 ...     

High Tc superconducting three-pole parallel-coupled bandpass filters made from laser ablated YBa2Cu3O7 − δ thin films

We have investigated three-pole parallel-coupled bandpass filters with fractional bandwidths of about 6% and 3% at a center frequency of 10.5 GHz utilizing high T_c superconducting YBa₂Cu₃O_{7 − δ} thin films. The films were deposited on LaAlO₃ substrates by pulsed laser ablation. Microwave responses of the filters were measured as a function of temperature and input power. The performance of the 3% bandwidth filter exhibits low insertion losses of about 0.48 dB and 0.79 dB at 20 K and 77 K, respectively. The insertion loss in the 6% bandwidth filter was 0.96 dB at 77 K. Both filters showed return losses better than 15 dB. High T_c superconducting bandpass filters showed good reproducibility. They were also compared with equivalent gold filters which showed insertion losses of more than 8 dB at 77 K.     

单层平面基片集成波导双通带滤波器的仿真研究

提出了一种基于单层基片集成波导谐振腔的双通带滤波器。滤波器由传统折叠排列的6个谐振腔组成。通过在通带内设置一对传输零点,将传统滤波器的通带一分为二,实现了双通带。仿真结果表明滤波器的两个通带分别工作于9.85 GHz和10.08 GHz,在相对带宽分别为1.29%和1.76%的通带内,插入损耗小于1.68 dB和1.3 dB,回波损耗大于24 dB和14 dB,通带之间的隔离大于17 dB。该滤波器在无线通讯系统中具有良好的应用前景。     

Millimetre-wave wideband reflection-type CPW MMIC phase shifter

A reflection-type coplanar waveguide (CPW) phase shifter fabricated using a standard monolithic microwave integrated circuit (MMIC) process is presented. Air-gap overlay CPW couplers were employed for wideband 3 dB coupling and low loss at millimetre wave. The two-stage cascaded analogue phase shifter showed insertion losses of 6.9 ± 1.6 dB, return losses > 10 dB, and maximum rms phase error of +5.5° for the relative phase shift from -20° to 135°, over a wideband 27 to 47 GHz     

Attenuation mechanisms of aluminum millimeter-wave coplanar waveguides on silicon

The loss mechanisms of silicon coplanar waveguides (CPW) with aluminum metallization are investigated up to 40 GHz. Three main parts contribute to the attenuation of coplanar waveguides (CPWs): the frequency-dependent conductor losses of the metallization, frequency-independent substrate losses, and the specifically investigated bias-dependent interface losses caused by free charges at the Si-SiO/sub 2/ interface. The minimum losses found in 50-/spl Omega/ CPWs with 45-/spl mu/m signal line width were 0.19 db/mm at 10 GHz and 0.33 dB/mm at 40 GHz. High-purity silicon from a float zone (FZ) process was used as substrate. Substrates with lower purity from a Czochralski (CZ) process (resistivity 50-100 /spl Omega/cm) resulted in somewhat higher (0.2-0.3 dB/mm) losses for the same CPW geometry.     

Room temperature solid-state plasma nonreciprocal microwave devices

Nonreciprocal microwave propagation at room temperature in a waveguide which contains of a thin slab n-InSb has been demonstrated by the construction of an isolator, a three-port circulator, and a variable power divider, all operating at K-band frequencies. A forward loss and an isolation of 3 and 15 dB, respectively, was observed for the isolator; the forward and backward losses between adjacent ports of the circulator were 3 and 20 dB, respectively, and the power ratio of the divider could be varied from 1 to 10 for a given direction of the magnetic field. Transmission losses of about 3 dB were present in the forward direction and in each case, all but 1 dB of these were shown to be due to reflections resulting from impedance mismatch.     

Fabrication of long lengths of low-loss IR transmitting As40S(60-x)Sex glass fibers

Teflon clad and As₄₀S₆₀ glass clad As₄₀ S₅₅Se₅ fibers transmitting in the 1-6 μm wavelength region have been fabricated in lengths of about 50 m and with minimum losses of 0.098 and 0.65 dB/m, respectively. Short lengths of the Teflon clad fiber possessed a minimum loss of 0.047 dB/m. While current fiber losses are dominated by extrinsic scattering and absorption, the calculated theoretical minimum loss is estimated to be 3.6 dB/km at 5.3 μm and is limited by the contribution from the weak absorption tail. Improvements in the purification and processing of the glasses into the optical fibers are required to reduce the losses further     

A 3-d broadband dual-layer multiaperture microstrip directionalcoupler

A three-dimensional (3-D) broadband dual-layer multiaperature microstrip directional coupler is presented in this paper. The dual-layer, multiaperature directional coupler consists of two-layer back-to-back substrates with 15 small coupling apertures on the center ground plane. A novel rectangular multiaperature coupling structure with very small width is used to greatly extend the bandwidth and operating frequency of the coupler. The ±2.4 dB coupling variation bandwidth of the couplers is more than 1.5 octaves from 9.79 to 29.55 GHz. The insertion losses, return losses at all ports and directivities, are better than 1.7 dB, 10.26 dB, and 10.3 dB over the bandwidth, respectively. The measurements agree well with the simulations     

Tapered distributed analogue tunable phase shifter with low insertion and return loss

Some improvements for distributed Schottky diode tunable phase shifters are carried out. First, near- and far-end sections are tapered to improve return loss. Then, to reduce device length, and the number of varactors, inductances are added in series with the varactors, leading to an improved C/sub max//C/sub min/ ratio. For a 360/spl deg/ tunable phase shifter working at 1 GHz, insertion losses are limited to 2.4 dB maximum. Return loss is better than 20 dB. The tapered sections allow a wide working frequency range, typically from 800 to 1200 MHz with the same characteristics: around 2.4 dB insertion losses, 20 dB return loss.     

A Ku‐Band 5‐Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation

This paper describes the performance of a Ku‐band 5‐bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5‐bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than 7.5° root‐mean‐square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5‐bit phase shifter, the insertion losses were 8.2 ± 1.4 dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5‐bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm × 1.65 mm. The packaged phase shifter demonstrated a phase error of less than 11.3° RMS, measured insertion losses of 12.2 ± 2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm × 6.20 mm.     

Design and performance of tuned fiber coil isolators

Optical isolators using coiled single-mode fibers with controlled birefringence have been thoroughly analyzed and tested experimentally. Isolation ratios as high as 44.5 dB with insertion losses (excluding coupling and polarizer losses) of 0.3 to 0.4 dB have been obtained at 633 nm. Analysis indicates that these devices will have >20-dB isolation over a spectral range of 2.5 nm or a temperature range of 36°C.     

Polarisation-independent optical circulator coupled with multimode fibres

An experiment on a polarisation-independent optical circulator coupled with graded-index fibres was performed. Insertion losses of 2.5?2.9 dB and isolation ratios of 15?34 dB among nonreciprocal ports were measured, at 1.27 ?m wavelength.     

A simplified HF field strength prediction procedure for India

Field strength measurements of several HF broadcast transmissions were made at New Delhi during 1987-1990 with a view to evolving a simple procedure for estimation of the skywave field strength in the HF bands (3-30 MHz). An attempt has been made using the measured field strength values to arrive at a single combined loss factor which can account for all the losses in excess of basic free space and ionospheric absorption losses. The present study has shown that a provision of 4 dB for transmission losses other than free space and ionospheric absorption losses can bring the predicted values closer to measured field strength values for single-hop circuits in India for about 50% of the cases, and 10 dB increases it to 90%. Transmission losses in general were found to be much higher during equinoctial months in India, particularly around the peak region of equatorial anomaly     

A significant reduction of propagation losses in InGaAsP-InPburied-stripe waveguides by hydrogenation

We show here that the high propagation losses often measured at ~1.56 μm in InGaAsP-InP buried-ridge stripe waveguides can be significantly brought down by implementing hydrogenation (exposure to deuterium plasma) as the last step to device termination. For example, losses as high as ~30 dB/cm measured in conventional as-processed structures have dropped down after hydrogenation to typically 4-5 dB/cm. This improved loss value is totally compatible for the realization of passive sections in photonic circuits. We further present preliminary data describing the good thermal stability of these propagation losses in post-hydrogenated structures     

Lattice-Matched GaN–InAlN Waveguides at λ = 1.55 μm Grown by Metal–Organic Vapor Phase Epitaxy

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-mum-wide WGs the propagation losses in the 1.5- to 1.58-mum spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process.