应力诱导碳纳米管电阻的变化

利用三点弯曲法研究了掺杂和末掺杂碳纳米管薄膜应力诱导电阻的变化.该研究中所用的碳纳米管是用热灯丝化学汽相沉积法合成的.实验结果表明,碳纳米管有显著的应力诱导电阻变化的效应.当应力从0.2GPa增加到1GPa时,膜的电阻相对变化从7%增加到11%,而非掺杂的薄膜电阻变化小于掺杂膜的情况.电阻随应力变化的原因也许是带隙变化(掺杂)和管之间接触电阻变化(非掺杂)所致.     

应力诱导碳纳米管电阻的变化

利用三点弯曲法研究了掺杂和末掺杂碳纳米管薄膜应力诱导电阻的变化。该研究中所用的碳纳米管是用热灯丝化学汽相沉积法合成的。实验结果表明，碳纳米管有显著的应力诱导电阻变化的效应。当应力从0．2GPa增加到1GPa时，膜的电阻相对变化从7％增加到11％，而非掺杂的薄膜电阻变化小于掺杂膜的情况。电阻随应力变化的原因也许是带隙变化(掺杂)和管之间接触电阻变化(非掺杂)所致。     

用碳纳米管膜测量转动速度

对多壁碳纳米管(MWCNTs)膜在高速转动下的压阻效应进行了研究，并讨论了利用这种效应来测量转动速度和制造这类传感器的可能性。实验所用的多壁碳纳米管是用热灯丝化学气相沉积法(CVD)合成。研究发现：在室温下，多壁碳纳米管膜的电阻随转子转速的增加而增加，在转子转速从1000r／min～3000r／min的变化过程中，多壁碳纳米管膜的电阻近似呈线性变化。并且碳纳米管膜在拉伸和压缩两种情况下电阻变化与转速之间的关系曲线近似对称．     

PECVD制备非晶硅薄膜的研究

实验采用等离子体增强化学气相沉积(PECVD)法在Si衬底上制备了非晶硅薄膜。研究了射频功率、PH3掺杂浓度等因素对薄膜电阻率以及应力的影响。实验结果表明,对于非掺杂非晶硅薄膜,当射频功率从15W增加到45W时,薄膜应力从张应力变化到压应力,在射频功率为35W时,应力几乎为零,应力绝对值先降低后增加,淀积速率随着射频功率的增加而增加;对于掺杂非晶硅薄膜,电阻率随着PH3掺杂浓度的增加而降低,当PH3流量从0cm3/min增加到12cm3/min时,薄膜掺杂效果明显,电阻率降低3个数量级,继续增加PH3流量,电阻率变化较小,而应力随着PH3掺杂浓度的增加而降低,当PH3流量超过12cm3/min时,应力有增加的趋势。     

网络状碳纳米管薄膜应变传感器的机理研究

计算并评估了应力对网络状碳纳米管薄膜力学和本征电阻各参数的影响,结合逾渗理论分析了碳纳米管薄膜的应变传导机理,建立了模型并推导了碳纳米管薄膜在应力下整体电阻变化率的计算公式,最后将理论计算结果与实验数据进行了比较验证,发现碳纳米管含量变化是引起薄膜电阻变化的关键因素。     

Cr应力缓释层对柔性Cu2ZnSn(S,Se)4薄膜太阳电池性能的影响

柔性Cu₂ZnSn(S,Se)₄(CZTSSe)薄膜太阳电池中的应力是阻碍其发展的一大瓶颈。采用磁控溅射法在柔性Ti衬底和Mo背电极之间引入不同厚度的Cr缓释层，研究其对CZTSSe薄膜应力的影响。结果表明，当Cr应力缓释层厚度为80 nm时，薄膜的结晶质量最好，电池具有最佳的光电性能，相比没有Cr应力缓释层存在的情况，薄膜的残余应力从-7.15 GPa降低至-3.61 GPa,电池的光电转换效率(PCE)从2.89%提高至4.65%,增加了60.9%。Cr应力缓释层的引入不会影响CZTSSe薄膜的晶体结构，相反可有效提高薄膜的结晶质量，降低薄膜的残余应力，最终提高电池的光电性能。     

低电阻率高透过率TAZO透明导电膜的制备及性能

利用直流磁控溅射工艺,在水冷玻璃衬底上制备了透过率高、电阻率相对较低的钛铝共掺杂ZnO(TAZO)透明导电膜。用XRD和SEM等研究其结构、应力和光电性能与靶基距之间的关系。结果表明:TAZO薄膜为六方纤锌矿结构的多晶薄膜,且具有c轴择优取向。当靶基距为42mm时,薄膜样品晶格畸变最小,具有最小压应力(绝对值)0.270GPa,同时具有最小方块电阻4.21?/□;靶基距为48mm时,薄膜样品具有最小电阻率3.09×10–4?·cm。所有薄膜样品的可见光区平均透过率都超过了91%。     

掺Pt对Si(100)上形成的NiSi薄膜应力的影响

利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响.通过改变NiSi薄膜中Pt含量以及控制热处理的升温、降温速率实时测量了薄膜应力,发现在Si(100)衬底上生长的纯NiSi薄膜和纯PtSi薄膜的室温应力主要是热应力,且分别为775MPa和1.31GPa,而对于Ni1-xPtxSi合金硅化物薄膜,室温应力则随着Pt含量的增加而逐渐增大.应力随温度变化曲线的分析表明,Ni1-xPtxSi合金硅化物薄膜的应力驰豫温度随Pt含量的增加,从440℃(纯NiSi薄膜)升高到620℃(纯PtSi薄膜).应力驰豫温度的变化影响了最终室温时的应力值.     

掺Pt对Si(100)上形成的NiSi薄膜应力的影响

利用在线应力测试技术表征了掺入Pt后对镍硅化物薄膜应力性质的影响.通过改变NiSi薄膜中Pt含量以及控制热处理的升温、降温速率实时测量了薄膜应力,发现在Si(100)衬底上生长的纯NiSi薄膜和纯PtSi薄膜的室温应力主要是热应力,且分别为775MPa和1.31GPa,而对于Ni1-xPtxSi合金硅化物薄膜,室温应力则随着Pt含量的增加而逐渐增大.应力随温度变化曲线的分析表明,Ni1-xPtxSi合金硅化物薄膜的应力驰豫温度随Pt含量的增加,从440℃(纯NiSi薄膜)升高到620℃(纯PtSi薄膜).应力驰豫温度的变化影响了最终室温时的应力值.     

超声雾化喷涂工艺及优质二氧化锡透明导电薄膜的研究

报道了采用超声雾化喷涂工艺沉积优质掺杂二氧化锡透明导电半导体薄膜的实验成果 ,选用氟作为掺杂元素 ,通过改变掺杂量和工艺参数 ,可控制薄膜的方块电阻在 1 0 Ω/□以上的范围内变化 (40 0 nm膜厚 ) ,掺氟离子二氧化锡为 n型导电半导体 ,高浓度掺杂的二氧化锡薄膜光学透过率为 87%～ 90 % (采用 550 nm单色光源测透过率 )。用 X射线衍射及扫描电子显微镜分析 ,可获得该薄膜材料的微结构、表面形貌以及薄膜组成、掺杂百分含量。该成果为大规模生产优质二氧化锡透明导电薄膜 ,提供了有效、简单的方法和装置。     

Piezoresistive Sensors Based on Carbon Nanotube Films

Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes have a striking piezoresistive effect. The relative resistance was changed from 0 to 10.5 X 10-2 and 3.25 X 10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35 ℃. The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.     

Properties of nanostructured Al doped ZnO thin films grown by spray pyrolysis technique

Aluminium doped zinc oxide thin films were deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at % Al doping, further increase in the doping concentration to 5 at % changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the visible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at % respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at % Al doped films.     

化学处理增强碳纳米管的湿敏效应

研究了多壁碳纳米管的湿敏效应。研究中所用碳纳米管是用热灯丝化学汽相沉积法生长的。实验结果表明 ,经由化学修饰后碳纳米管的湿敏效应有了极大的增强。化学修饰后碳纳米管在水蒸汽中电阻相对变化达到了 30 0 % ,而未修饰只有 3.2 5 %。本文对其结果进行了分析和讨论     

In和Te掺杂PbSe薄膜制备及其对薄膜光电性能的影响机制

采用中频磁控溅射技术制备了PbSeIn和PbSeTe两种掺杂PbSe薄膜, 并采用理论模拟与实际实验相结合的方法研究了In和Te两种元素的掺杂机制及其对薄膜性 能的影响。结果表明,In原子主要通过置换Pb原子的形式进行掺杂,而Te原子则主要置换 Se原子;与未掺杂PbSe薄膜相比,PbSeIn和PbSeTe两种薄膜的光电敏感性均有一定提高, 其中In掺杂PbSe薄膜的平均电阻变化率最高。这是由于In元素在PbSe薄膜禁带内形成深杂 质能级,提高非平衡载流子寿命所导致的。而PbSeTe薄膜的光电敏感性则与未掺杂PbSe薄 膜相近。     

Giant Temperature Coefficient of Resistance in Carbon Nanotube/Phase‐Change Polymer Nanocomposites

The temperature coefficient of resistance of a carbon nanotube nanocomposite with the non‐conductive phase‐change hydrogel Poly(N‐isopropylacrylamide) is studied. This nanocomposite is found to achieve the largest reported temperature coefficient of resistance, ≈?10%/°C, observed in carbon nanotube‐polymer nanocomposites to date. The giant temperature coefficients of resistance results from a volume‐phase‐transition that is induced by the humidity present in the surrounding atmosphere and that enhances the temperature dependence of the resistivity via direct changes in the tunneling resistance that electrons experience in moving between nearby carbon nanotubes. The bolometric photoresponses of this new material are also studied. The nanocomposite's enhanced responses to temperature and humidity give it great potential for sensor applications and uncooled infrared detection.     

Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications

CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films.     

Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions

This paper presents the results from a comparative study of Young’s modulus, residual stress, and membrane burst pressure of undoped LPCVD polysilicon films exposed to various concentrations of hydrofluoric acid (HF). Load deflection measurements on square membranes of polysilicon with residual tensile stress were used to obtain estimates of Young’s modulus, residual stress and burst pressure. The polysilicon membranes were exposed to four different solutions of the 49% by weight reagent HF including 10:1 DI water and HF, 1:1 DI water the HF, commercial 10:1 buffered oxide etchant, or pure HF (i.e. 49% by weight reagent). Two control groups were studied composed of membranes with no treatment and membranes exposed to DI water. Young’s modulus changed from an average of 190 GPa for the control groups to an average of 240 GPa for films exposed to pure HF. Residual stress values exhibited a less pronounced and opposite change, with an average of 42 MPa for the control groups and an average of 27 MPa for films exposed to pure HF. Similarly, burst pressure was seen to decrease with increasing HF concentration, ranging in value from an average of 96.5 kPa (14 psi) for the control groups to an average of 34.5 kPa (5 psi) for films exposed to pure HF. It was found that the change in the investigated mechanical properties of polysilicon was approximately equal for HF:DI solutions of HF concentration above 10%. Furthermore, for solutions of equal HF concentration, the addition of the buffering agent decreases the effect on membrane burst pressures significantly.     

Effect of doping on the temperature coefficient of resistance of polysilicon films

For doped polysilicon films, an experimental investigation is presented into the variation of temperature coefficient of resistance (TCR) with formation conditions, the dopants being rare-earth elements (Eu, Gd, and Yb), oxygen, germanium, and implanted boron or phosphorus. The sign and magnitude of the TCR are shown to be governed by the dopant concentrations and the conditions of postimplantation annealing. Common and specific features are identified in the behavior of TCR for undoped films and for doped ones differing in dopant and doping technique. A negative TCR is observed in undoped films and in ones doped with a rare-earth element or germanium. B or P ion implantation into films predoped with Ge is shown to give a positive TCR if the implant concentration exceeds 10¹⁸ atoms/cm³. With any of the dopants employed, raising the dopant concentration makes possible the transition from a negative to a positive TCR.     

Does Electronic Type Matter when Single‐Walled Carbon Nanotubes are Used for Electrode Applications?

Single‐walled carbon nanotube (SWNT) electrodes that are chemically and mechanically robust are fabricated using a simple drop cast method with thermal annealing and acid treatment. An electronic‐type selective decrease in sheet resistance of SWNT electrodes with HNO₃ treatment is shown. Semiconducting SWNTs show a significantly higher affinity toward hole doping in comparison to metallic SWNTs; a ≈12‐fold and a ≈fivefold drop in sheet resistance, respectively. The results suggest the insignificance of the electronic type of the SWNTs for the film conductivity after hole doping. The SWNT films have been employed as transparent hole extracting electrodes in bulk heterojunction (BHJ) organic photovoltaics. Performances of the devices enlighten the fact that the electrode film morphology dominates over the electronic type of the doped SWNTs with similar sheet resistance and optical transmission. The power conversion efficiency (PCE) of 4.4% for the best performing device is the best carbon nanotube transparent electrode incorporated large area BHJ solar cell reported to date. This PCE is 90% in terms of PCEs achieved using indium tin oxide (ITO) based reference devices with identical film fabrication parameters indicating the potential of the SWNT electrodes as an ITO replacement toward realization of all carbon solar cells.