硅锥场发阴极电热状态的数值模拟

用有限差分法求解相互耦合的电流连续方程导热方程，对硅锥阴极的电热状态进行了数值模拟。模拟中采用了与温度、电场相关电导率模型。模拟的表明，锥体顶端的电位变化比较突出，在较小的电流下其内部电场即可以达到临界场强，使载流子漂移速度开始饱和，并表现出饱和的发射特性。在尖锥顶端内部电场达到监界场强直至发生碰撞电离时，温升不显。     

悬浮单根纳米碳管端部场分布的计算

本文以建立的悬浮纳米碳管头部模型替代整根纳米碳管,来研究影响阴阳极板间单根纳米碳管顶端的场强变化的不同参数.运用模拟电荷和镜像电荷导出单根纳米碳管尖端场增强因子关于长径比的简单线性公式,其结果明显优于悬浮球模型.利用此模型同时可得到相应的顶端电场分布,结果表明其分布并不明显依赖纳米碳管的长径比,而且纳米碳管柱面的场发射电流微弱,与顶端的场发射电流相比可以忽略.     

新型PB-PSOI器件表面电场和温度分布模型研究

根据泊松方程和热扩散方程提出了新型PB—PSOI器件漂移区的二维表面电场分布模型和温度分布模型,模型计算结果与Medici模拟结果相一致。根据所提出的模型,重点研究了埋氧化层厚度及长度对漂移区表面电场分布和温度分布的影响,最后给出了PB-PSOI器件的埋氧化层厚度和长度的优化设计方法。     

3D基底上碳纳米管场发射I-V特性建模与计算

利用有限元分析软件ANSYS分析了在平面上引入立体墙结构的阴极电场分布,给出了立体墙结构阴极表面的场强分布曲线,结合F-N方程计算了在立体结构上生长碳纳米管和平面型冷阴极上直接生长碳纳米管的电流密度,通过数值计算计算了总的场发射电流,结果表明,场发射电流随场强的变化非常大,立体墙结构型冷阴极场发射电流与平面型冷阴极发射电流相比,场发射能力得到极大的增强。     

铁电薄膜极化反转电流的电场和温度特性研究

应用铁电薄膜极化反转的KA模型,讨论了极化反转电流随电场和温度的变化关系.结果表明,极化反转电流随电场的增加而增加,极化反转时间在低电场时成指数关系下降,高电场时幂律关系下降;在居里温度附近,极化反转电流随温度增加而减小,温度远低于居里温度时,随温度增加而增加.     

低浓度悬浮液电场膜过滤临界场强的研究

探讨了操作压差、主体流速、料浆浓度等因素对电场膜过滤中临界场强的影响．实验结果表明：操作压差对临界场强的影响较大,而主体流速和料浆浓度的影响较小．从理论上推导出临界场强的计算式,并得到了较好的实验验证,从而解决了电膜滤过程中的一个难题．     

液膜乳状液电破乳的研究

本文讨论了乳状液内相小水滴在电场中的聚沉破乳机理,并在此基础上提出了电破乳中临界场强的概念。在自制的电破乳器中,对电破乳中各种影响因素进行了实验研究,本文提出的临界场强概念可以很好地解释实验中的某些现象。     

液膜乳状液电破乳的研究

本文讨论了乳状液内相小水滴在电场中的聚沉破乳机理,并在此基础上提出了电破乳中临界场强的概念。在自制的电破乳器中,对电破乳中各种影响因素进行了实验研究,本文提出的临界场强概念可以很好地解释实验中的某些现象。     

沥青再生剂扩散系数模型及其影响因素

为满足道路养护对高效沥青再生剂的需求,研究基于对自由体积理论的分析建立再生剂扩散系数预测模型,结合基团贡献法、参数拟合法计算模型参数,通过模拟方法验证模型有效性。模拟及预测扩散系数对比表明,扩散系数模型能够有效预测再生剂在老化沥青中的扩散系数。同时,研究基于模型对扩散行为的影响因素进行分析,探究了分子间相互作用、温度与再生剂扩散行为之间的关系。结果显示：芳香分再生剂与沥青分子间的相互作用比饱和分再生剂高,扩散速度较快;随温度的升高,饱和分再生剂的分子加速扩散,温度达到400 K后,饱和分再生剂的扩散系数大于芳香分再生剂。以上结果说明,在选用再生剂时,需同时关注温度及内部分子的化学结构对再生效率的影响。     

新型结构热电元件的多物理场耦合研究

为了改善热电元件的工作性能,提出了两种新型结构的热电元件,分别是半倾斜型和双倾斜型,倾斜角度57.99°。参考传统的垂直型热电元件,采用数值模拟的方法,通过控制电流、热端温度和冷热端温差等参量,对三种结构的热电元件进行了温度场、电场耦合分析。结果显示:双倾斜型电热元件能够实现最低的冷端温度,且随着电流的增大,不同结构冷端温度的差值先增大后减小;在小功率条件下,双倾斜型电热元件制冷量最大;双倾斜结构能够达到最高的制冷系数,但在大功率条件下制冷系数却最低;倾角为钝角处存在场强突变现象;最大电流密度均出现在不与半导体接触的铜片区域中;双倾斜结构更适用于微小型低功耗热电设备。     

尖锐端头碳纳米管的制备与场发射特性

采用氢电弧法制备了尖锐端头的碳纳米管,获得了具有三种特殊形貌的尖端,即锥形、颈缩形和铅笔状尖端.该特殊彤貌的彤成可归因于在原料中加入硅粉进而形成的结构缺陷.研究了所得碳纳米管的场发射特性,发现其阈值电场较低,仅为3.75V/mm;场发射电流密度可高达～1.6×105A/cm2;且场发射稳定性好.以上优异的场发射性能归结于该碳纳米管具有良好的结构完整性和独特的尖端结构特征.

Abstract：

Carbon nanotubes (CNTs)with sharp tips were synthesized by a hydrogen arc discharge method. Three unusual morphologies,i.e. ,a cone-shaped tip,a suddenly-shrinking tip,and a pencil point-like tip were observed. These novel tip structures are considered to be related to the addition of a small amount of silicon powder in the raw material,which may introduce structural defects in the CNTs. The field emission properly of the sharp-tip CNTs was investigated,and a low threshold electric field of 3.75 V/m,a high field emission current density of ～1.6× 105 A/cm2,and a good emission stability were demonstrated. The superior field emission performance of the CNTs can be attributed to their good crystallinity and unique tip structures.     

On the effectiveness of variation in the physical variables on the steady MHD flow between parallel plates with heat transfer

The influence of variation in physical variables on the steady Hartmann flow with heat transfer is studied. An external uniform magnetic field is applied perpendicular to the parallel plates and the fluid is acted upon by a constant pressure gradient. The viscosity and the thermal and electric conductivities are assumed to be temperature dependent. The two plates are kept at two constant but different temperatures and the viscous and Joule dissipations are considered in the energy equation. A numerical solution for the governing non‐linear coupled equations of motion and the energy equation is obtained. The effect of magnetic field, the temperature dependent viscosity, thermal conductivity, and electric conductivity on both the velocity and temperature distributions is examined. Copyright © 2005 John Wiley & Sons, Ltd.     

Near-field thermal transport in a nanotip under laser irradiation

We report on a systematic study of highly enhanced optical field and its induced thermal transport in nanotips under laser irradiation. The effects on electric field distribution caused by curvature radius, tip aspect ratio, and polarization angle of the incident laser are studied. Our Poynting vectors' study clearly shows that when a laser interacts with a metal tip, it is bent around the tip and concentrated under the apex, where extremely high field enhancement appears. This phenomenon is more like a liquid flow being forced/squeezed to go through a narrow channel. As the tip-substrate distance increases, the peak field enhancement decreases exponentially. A shift of field peak position away from the tip axis is observed. For the incident light, only its component along the tip axis direction has a contribution to the electric field enhancement under the tip apex. The optimum tip apex radius for field enhancement is about 9 nm when the half taper angle is 10°. For a tip with a fixed radius of 30 nm, field enhancement increases with the half taper angle when it is less than 25°. The thermal transport inside the nanoscale tungsten tips due to absorption of incident laser light is explored using the finite element method. A small fraction of light penetrates into the tip. As the polarization angle or apex radius increases, the peak apex temperature decreases. The peak apex temperature goes down as the half taper angle increases, even though the mean laser intensity inside the tip increases, revealing a very strong effect of the taper angle on thermal transport.     

SiCl4/H2为气源低温沉积多晶硅薄膜低温电学特性的研究

对用SiCl4/H2为源气体、采用等离子体增强化学气相沉积(PECVD)技术制备的多晶硅薄膜进行了低温电学特性的研究.实验结果表明,多晶硅薄膜的暗电导强烈依赖于温度,在300～90K的温度范围内呈现不同的导电特性.对多晶硅薄膜,其导电特性还与晶化率有关,晶化率越大电导率越大.测量数据表明,低晶化率薄膜电输运主要由电子热发射跃过势垒所贡献,但对于高晶化率的薄膜要同时考虑电子隧穿对电导的影响.     

Transport properties of thin metal films

The electrical conductivity, thermal conductivity and thermoelectric power of a metal film subjected to the simultaneous action of an electric field and a temperature gradient were calculated. Analytical equations for the electrical and thermal current densities in thin metal films were obtained.     

Electronic conduction in SiO2:N thin films grown by thermal oxidation of silicon in N2O

Silicon oxynitride [SiO₂:N] thin films have been grown by oxidizing silicon in N₂O at 900, 1000 and 1100 °C and at 760 and 1520 torr. It is shown that the dominant electrical conduction mechanism, for high electric fields, is the field assisted thermionic emission from the traps (Poole-Frenkel effect), and is not direct or Fowler-Nordheim tunneling, as typically occurs in thermal silicon oxide with similar thickness. Electrical conduction in these films occurs by field assisted electron emission from donor traps with energy levels varying in the range from 0.5 to 1 eV from the conduction band. The results shown here indicate that the best quality films are those grown at low temperature and pressure, since they give films with a higher critical electric field, a higher energy barrier depth at the traps and less donors compensated by acceptors than those grown at high temperatures and pressures.     

Limitations on the use of an electric current when determining the thermal conductivity of graphite under steady thermal conditions

It is shown experimentally that the thermal conductivity of DE-24 graphite under steady thermal conditions when using an electric current as the heat source cannot be determined at a temperature higher than 3300 K. It is established that this temperature limit is due to spontaneous breakdown of the steady thermal operating conditions, which is expressed as an increase with time of the internal surface temperature and the mean value of the electric power assigned to the high-temperature isothermal part of the hollow cylindrical sample.     

The transport properties of ethane. II. Thermal conductivity

A new representation of the thermal conductivity of ethane is presented. The representative equations are based upon a body of experimental data that have been critically assessed for internal consistency and for agreement with theory in the zero-density limit and in the critical region. The representation extends over the temperature range from 100 K to the critical temperature in the liquid phase and from 225 K to the critical temperature in the vapor phase. In the supercritical region the temperature range extends to 1000 K for pressures up to 1 MPa and to 625 K for pressures up to 70 MPa. The ascribed accuracy of the representation varies according to the thermodynamic state from ±2% for the thermal conductivity of the dilute gas near room temperature to ±5% for the thermal conductivity at high pressures and temperatures. Tables of the thermal conductivity, generated by the relevant equations, at selected temperatures and pressures and along the saturation line are also provided.     

液态金属离子源发射系统电场的模拟分析

发射系统是液态金属离子源的关键部件之一，它的性能的优劣直接影响到整个离子源的工作稳定性和可靠性。因而对其发射系统进行仿真分析，可以很好地指导液态金属离子源的设计制造。本文采用国际上重视的动态喷流柱模型，利用模拟电荷法对液态金属离子源的发射系统的电场进行了计算分析，画出了发射尖端电场强度随不同参数变化的曲线，得出发射尖端表面场强与球冠半径、发射体突出臂长度密切相关，而与引出电极的结构关系甚小的结论，因此液态金属离子源发射特性（如角电流强度）的改善，必须在发射尖的设计制作上下功夫。从而为液态金属离子源的设计提供了一个有效的辅助工具。     

Thermionic-field emission of electrons from conical metal points

The electric field in the neighborhood of the tip of conical point exhibits an integrable special feature. Therefore, for calculating the current of thermionic-field emission from a conical point, one has to find (or reasonably estimate) the emission current density, including that at high and, in the limit, infinite fields. It is suggested to solve this problem using, firstly, a numerical method of finding the electric field of a conical point which is capable of correctly describing the feature at the tip and, secondly, a common approach to considering the thermionic, field, and thermionic-field emission of electrons from metal in a wide range of variation of electric field on the surface. It is demonstrated that, at high electric fields, the density of thermionic-field emission current tends to some limiting value, i.e., the effect of saturation of emission current density is observed. The basic reason for this saturation is found. It is demonstrated that the total current of electron emission from a conical point remains finite at not too high values of intensity of external electric field, in spite of the infinite field increasing at the cone tip.