Silicon oxynitride planar waveguiding structures for application inoptical communication

The refractive index of silicon oxynitride (SiON), a widely used material for integrated optics devices, can be chosen in a wide range between 1.45-2.0. We describe how the consequent large design freedom can be exploited on the one hand for a “standard” polarization independent optical channel waveguide having a favorable tradeoff between efficient fiberchip coupling and small bend radii (compact devices) and on the other hand for special-purpose and hybrid components where the refractive index should be finely adjusted for obtaining the desired functionality. We illustrate the applicability of SiON by describing a few devices for optical filtering in a new architecture for wavelength multiplexing, modulation, polarization splitting and second-harmonic generation     

Asymmetrical single-mode silica waveguide deposited by PECVD

Silicon oxynitride (SiON) layer and SiO₂ buffer layer were deposited on silicon wafers by PECVD technique using SiH₄, N₂O and N₂. The refractive index of SiON films measured at a wavelength of 1552 nm using a prism coupler, could be continuously varied from 1.4480 to 1.4508. Optical planar waveguides with a thickness of 6 μm and a refractive index contrast (Δn) of 0.36% have been obtained. In addition, etching experiments were performed using ICP dry etching equipment on thick SiON films grown on Si substrates covered with a thick SiO₂ buffer layer. In order to measure optical properties, a polarization maintaining single-mode fiber was used for the input and a microscope objective for the output at 1.55 μ m. A low-loss and low propagation SiON-based waveguide was fabricated with easily adjustable refractive index of core layer.     

Scaling the modulation bandwidth and phase efficiency of a silicon optical modulator

We present an optimized design and detailed simulation of an all-silicon optical modulator based on a silicon waveguide phase shifter containing a metal-oxide-semiconductor (MOS) capacitor. Based on a fully vectorial Maxwell mode solver, we analyze the modal characteristics of the silicon waveguide. We show that shrinking the waveguide size and reducing gate oxide thickness significantly enhances the phase modulation efficiency because of the optical field enhancement in the voltage induced charge layers of the MOS capacitor, which, in turn, induce refractive index modulation in silicon due to free carrier dispersion effects. We also analyze the device speed by transient semiconductor device modeling. As both optical absorption and modulation bandwidth increase with increasing doping concentration, we show that, with a nonuniform doping profile in the waveguide, balance between the device operation speed and optical loss can be realized. Our simulation suggests that a TE-polarized optical phase modulator with a bandwidth of 10 GHz and an on-chip optical loss less than 2 dB is achievable in silicon.     

Preparation of Textured Growth Pb(Zr,Ti)O3 Thin Films on Si Substrate Using SrTiO3 as Buffer Layers

PZT thin films are deposited on SiO₂/Si substrate by metallo-organic decomposition (MOD) process, using SrTiO₃ (STO) as buffer layer for textured growth. The STO layers deposited on SiO₂/Si substrate by pulsed laser deposition process show (100)/(200) preferred orientation, whereas the STO buffer layer deposited on silica substrate using spin-coating technique show random orientation behavior. The use of STO as buffer layers enhanced the crystallization and the preferred orientations of the PZT films. The PZT on STO buffered SiO₂/Si substrates thus obtained possess high refractive index, (n)_PZT/STO = 2.1159, and are of good enough quality for optical waveguide applications.     

Electrostatic deposition of CVD particles for fabrication ofultrafine ceramic filter

A novel method for forming a ceramic membrane was devised. Ultrafine particles of silicon nitride synthesized by thermally activated chemical vapor deposition (CVD) were deposited on an outer wall surface of a porous ceramic tube (substrate) by electrostatic force and sintered in an inert gas atmosphere. The ceramic-made electrode assembly using surface discharge was used for charging ultrafine particles at an elevated temperature. Special ceramic membranes with a three-dimensional network for use as a fiber filter were obtained by this method. The effective pore size was around 0.2-1.0 μm in diameter, and its porosity was extremely large. This structure has the advantage of allowing microfiltration with a very low pressure drop     

Polymer microring resonators for biochemical sensing applications

Polymer microring resonators were demonstrated for sensing biomolecules without using fluorescent labels. The microring devices, fabricated by a direct imprinting technique, possess high Q factors of /spl sim/20000. This feature provides high sensitivity and a low detection limit for biochemical sensing applications. With these properties, the devices were used to detect and quantify the biomolecules present either in a homogeneous solution that surrounds the microring waveguide (homogeneous sensing) or specifically bound on the waveguide surface (surface sensing). In the former sensing mechanism, the current devices can detect an effective index change of 10/sup -7/ refractive index units (RIU); in the latter, they can reach a detection limit of /spl sim/250 pg/mm/sup 2/ of biomolecular coverage on the microring surface. In addition, the experiments show that the devices can detect both small and large biomolecules.     

纳米多孔硅可控制备研究

采用了自制双槽和电化学腐蚀法在不同电阻率的硅片上制备出表面平整度很好的纳米多孔硅层,利用场发射扫描电子显微镜对多孔硅的微观形貌进行了分析表征。实验表明多孔硅的孔径、孔隙率和厚度随电化学腐蚀的电流密度和腐蚀时间增加而增加,且电解液中HF(40%)和无水乙醇(99.7%)的配比很趋近时,多孔硅的孔洞分布均匀性越好。在电阻率为0.01~0.02Ω·cm的P型硅片上制备的纳米多孔硅其效果相比其他电阻率的要好。     

常压氢空自增湿燃料电池用复合质子交换膜

以多孔聚四氟乙烯(PTFE)与Nafion树脂复合制备基底层,在基底层两侧喷涂含有纳米级担载型Pt-SiO2催化剂和Nafion树脂的浆料以形成功能层,所得复合膜(20μm)具有三层复合结构.在常压干态氢气、空气操作条件下,具有三层结构的复合膜(Pt-SiO2/NP)和不含有催化剂的Nation/PTFE(NP)膜的自增湿燃料电池的峰值比功率分别达0.6、0.3 W/cm2,开路电压分别为0.96、0.92 V.采用透射电子显微镜法(TEM)、扫描电子显微镜法(SEM)对膜结构以及利用热重分析(TGA)对膜含水量分别进行表征,同时对膜机械性能以及氧气渗透率进行了测试.     

Three dimensional arrays of hollow gadolinia-doped ceria microspheres prepared by r.f. magnetron sputtering employing PMMA microsphere templates

Preparation of macroporous gadolinia-doped ceria (CGO) films was attempted by r.f. magnetron sputtering. A polymethylmethacrylate (PMMA) microsphere film was fabricated as a template on a Pt-coated silicon substrate by dripping a PMMA microsphere aqueous dispersion onto the substrate. CGO was deposited onto the PMMA microspheres by sputtering; the PMMA microspheres were found to shrink during the sputtering, and thus the CGO also coated the surface of PMMA microspheres beneath the top layer of the film. Films (ca. 1.5 μm thick) consisting of three dimensional arrays of hollow CGO microspheres (ca. 700 nm in diameter) with large porosity were obtained after annealing the CGO/PMMA microsphere composite film.     

Wavelength demultiplexer using GaInAs-InP MQW-based variable refractive-index arrayed waveguides fabricated by selective MOVPE

A GaInAs-InP multiple quantum well (MQW)-based wavelength demultiplexer composed of an arrayed waveguide in which the refractive index varies across the array was fabricated. Since optical path length differences between waveguides in the array are achieved through refractive-index differences that are controlled by SiO/sub 2/ mask design in selective metal-organic vapor phase epitaxy (MOVPE), straight waveguide gratings having reduced optical propagation losses can be achieved. Furthermore, by employing MQW waveguides, variations in the refractive index may be induced through an applied electric field, allowing the device to manipulate wavelengths dynamically. A straight arrayed waveguide device having a 1.4% difference in refractive index was fabricated using an asymmetric side mask via a single selective MOVPE growth. The achievement of a diffraction angle difference of 4.40/spl deg/ between wavelengths of 1520 and 1580 nm was confirmed experimentally. In addition, a preliminary wavelength demultiplexer with a wavelength separation of approximately 25 nm and a free spectral range (FSR) of approximately 100 nm was also fabricated.     

Preparation of Functionally Graded PZT Ceramics Using Tape Casting

Functionally graded ferroelectric ceramics (FGM) have been fabricated for pyroelectric applications by an aqueous tape casting technology. The FGM produced in this study consisted of a porous Lead Zirconate Titanate (PZT) tape-cast ceramic, which was made by starch inclusions; sandwiched between two dense PZT layers by stacking and lamination. This paper investigates the effect of porosity on the microstructure and electrical properties of the PZT FGM samples produced. The microstructure of the porous and laminated sintered structures was studied using Scanning Electron Microscopy (SEM). The grain size of the porous layer tended to decrease with increasing corn-starch content. The dielectric constant and pyroelectric coefficient of the FGM both showed decreasing behaviour with increasing porosity.     

Integrated Optical Polarizer for Silicon-on-Insulator Waveguides Using Evanescent Wave Coupling to Gap Plasmon–Polaritons

Resonant coupling to a gap plasmon–polariton supported by a metal–dielectric nanoscale multilayer on top of a silicon guiding core is proposed for polarization control in silicon-on-insulator waveguides. The device functionality relies on the unusual dispersion properties of the gap plasmon–polaritons, whose modal index can be significantly higher than the refractive index of the gap layer.      

Influence of Different Substrates on the Detectivity of Pyroelectric Sensors

Nanosized lead titanate doped with calcium and lanthanum (PCLT) powder obtained by the sol-gel method was homogeneously mixed with vinylidene fluoride-trifluoroethylene [P(VDF-TrFE)] to form nanocomposites. Several pyroelectric sensors were prepared on porous silicon dioxide, on poly(ethylene terephthalate) (PET) film and on bulk silicon substrates, respectively. The nanocomposite PCLT/P(VDF-TrFE) sensing film was deposited by spin-coating and Ni-Cr film was deposited as the top electrode and absorption layer. Experimental results showed that the substrate of the pyroelectric sensor could significantly affect the specific detectivity. The porous silicon dioxide and PET plastic film substrates could effectively decrease the thermal conductivity and the thermal fluctuation noise of the pyroelectric element, increase the voltage responsivity and the specific detectivity. The results indicated that the specific detectivity of PCLT/P(VDF-TrFE) pyroelectric sensors based on porous silicon dioxide and PET plastic film substrates reached 4.2E6 and 3.4E7 cmHz 1/2 W m 1 respectively, which is about 1-2 orders of magnitude higher than that of the sensors formed under the same condition on the bulk silicon substrate.     

Self-Aligned Single-Mode Polymer Waveguide Interconnections for Efficient Chip-to-Chip Optical Coupling

Single-mode (SM) ultrashort optical interconnections between the fibers and waveguides using self-forming polymeric waveguides with low optical losses at 1300 and 1550 nm were demonstrated. The localized refractive index in the SM regime is estimated by measuring the surface topography induced by monomer diffusion during the waveguide formation. A loss less than$-1$dB can be obtained from self-aligning SM-to-multimode (MM) fibers and SM-to-SM fibers interconnections, respectively. A self-formed waveguide-to-fiber interconnection is fabricated and measured with loss less than 0.2 dB at 1550 nm. The polymer waveguide relaxes the positioning requirements for single-mode chip-to-chip optical interconnections, showing great potential to improve the short-term yield and long-term reliability.     

单束飞秒激光诱导ZnO晶体表面纳米周期结构的形成

介绍了不同波长的飞秒激光脉冲诱导ZnO晶体表面纳米周期结构,分析了纳米结构的周期Λ与激光波长λ的关系。结果表明:纳米结构的周期与材料折射率n有关,其与激光波长成线性,且符合Λ=λ/2n的关系。提出了样品分层的模型,解释了飞秒激光诱导纳米周期结构的形成机理。     

基于跑道型微环谐振腔的 Fano 共振器件设计及 传感特性研究

与传统洛伦兹线形相比,具有不对称线形的Fano共振光谱有更高的光谱分辨率,尤其适合传感应用。通过在硅基总线波导与跑道微环谐振腔耦合区域引入两个空气孔使得连续光谱产生突变相移,并与跑道微环谐振腔耦合形成Fano共振,且在较宽谱段范围内的每个共振峰都表现为非对称线形。通过仿真优化耦合间距以及空气孔与耦合区域中心的偏移量,获得最大光谱分辨率为312.05 dB/nm,消光比为53.09 dB的硅基Fano共振器件。在模仿被液体的折射率变化范围为1.33～1.332的条件下,仿真得到折射率传感灵敏度为125 nm/RIU。仿真结果表明本论文提出的器件结构简单,尺寸紧凑且制造误差小,为硅光子器件应用到高灵度敏度的集成生化传感提供新思路。     

PECVD低功率沉积氮化硅薄膜研究

为了减少太阳能电池氮化硅薄膜生产工艺中的缺陷、提高太阳能电池的转换效率,采用等离子增强化学气相沉积法在射频功率较低的条件下,对N型单晶硅片表面进行氮化硅沉积,获得与高射频功率沉积时相同膜厚和折射率的氮化硅膜,通过试验分析了低功率沉积工艺对电池电参数、对膜厚均匀性的影响。结果表明,在低功率沉积工艺条件下,有助于改善膜厚均匀性,使膜厚不均匀度由12%下降到6%,太阳能电池转换效率提高了0.05个百分点。     

Grating overgrowth and defect structures indistributed-feedback-buried heterostructure laser diodes

Distributed-feedback (DFB)-buried heterostructure lasers incorporating a substrate grating require epitaxy of waveguide layers over the corrugated grating surfaces. Unlike epitaxy on planar (100) substrate, the corrugated substrate surface contains undesirable crystal facets which lead to an uncontrollable variation in local composition during epitaxy, and thereby results in strong localized misfit stresses. These localized misfit stresses further affect the subsequent growth of high quality layers which constitute the active device structures. To address the general issue of epitaxy on a corrugated surface, a thermodynamic analysis is performed for surface mass transport on a grating surface at normal growth temperature to show that grating wash-out is a thermodynamically favorable process. However, growth on a perfectly preserved grating is undesirable due to the composition shift on groove facets. A systematic study of substrate orientation dependent composition variation of quaternary layers indicates a composition shift generally toward In and P rich directions for orientations from (100)-(111). Conditions for a strain free waveguide layer growth are demonstrated. The commonly observed imperfections associated with a grating overgrowth are summarized, and their effects on device reliability are discussed     

Buffer layer dependence of memory effects for SrBi2Ta2O9 on Si

Abstract

The ability to form a high-quality buffer layer between the ferroelectric layer and the underlying silicon substrate is of critical importance. A suitable buffer layer must provide an acceptable electronic interface with the silicon substrate, and also must be able to prevent intermixing between the ferroelectric material and the underlying silicon, as well as prevent oxidation of the latter during device processing. This paper reports the properties of jet-vapor deposited silicon nitride and thermally grown silicon oxide as the buffer. Results from TEM, EDS, XRD and AFM micrographs will be presented, along with some electrical data taken from corresponding memory capacitor structures.