Effect of TiO2 nanoparticles aggregation in silicate thin coating films on photocatalytic behavior for antifouling materials

Two types of disperser namely, a high speed agitation bead mill and a colloidal mill, were used for the dispersion behavior control of TiO₂ nanoparticles (20 nm in average primary diameter) in an aqueous suspension. A composite thin film raging in thickness from 90 to 400 nm was prepared from the coating suspension following the addition of a commercial ethyl silicate oligomer binder into the prepared suspension by means of a spray coating method. The mean aggregate size of TiO₂ nanoparticles in the aqueous suspension was found to be 80 nm and 290 nm in diameter, respectively, when using the agitated bead and colloidal milling methods. Large aggregates on the order of several hundred nanometers were found to remain in the suspension after colloidal milling. Further, a fine dispersion of TiO₂ nanoparticles in the thin film produced using the agitation bead milling process promoted the photocatalytic activity and enhanced transparency of the film for visible light. The aggregate structure of TiO₂ nanoparticles in an aqueous suspension was well maintained in the film prepared by a spray coating process.     

Structural and pyroelectric properties of sol–gel derived multiferroic BFO thin films

Multiferroic BFO/PZT multilayer films were fabricated by spin-coating method on the (1 1 1)Pt/Ti/SiO₂/Si substrate alternately using PZT(30/70), PZT(70/30) and BFO alkoxide solutions. The structural and ferroelectric properties were investigated for uncooled infrared detector applications. The coating and heating procedure was repeated six times to form BFO/PZT multilayer films. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as Bi₂Fe₄O₃. The thickness of BFO/PZT multilayer film was about 200–220 nm. The ferroelectric properties such as dielectric constant, remnant polarization and pyroelectric coefficient were superior to those of single composition BFO film, and those values for BFO/PZT(70/30) multilayer film were 288, 15.7 μC/cm² and 9.1 × 10^?9 C/cm² K at room temperature, respectively. Leakage current density of the BFO/PZT(30/70) multilayer film was 3.3 × 10^?9 A/cm² at 150 kV/cm. The figures of merit, F_V for the voltage responsivity and F_D for the specific detectivity, of the BFO/PZT(70/30) multilayer film were 6.17 × 10^?11 Ccm/J and 6.45 × 10^?9 Ccm/J, respectively.     

Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate

Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayer films were deposited on polyethersulfone (PES) substrate at room temperature. The multilayer films consisted of intermediate Ag metal layers, top and bottom Ga–Al doped ZnO layer. The multilayer with PES substrate had advantages such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, sheet resistances of multilayer showed 9 Ω/sq with 12 nm of Ag metal layer thickness. Average optical transmittance of multilayer film showed 84% in visible range (380–770 nm) with 12 nm of Ag metal layer thickness. Moreover the multilayers showed stable mechanical properties than single-layered Ga–Al doped ZnO sample during the bending test due to the existence of ductile Ag metal layer.     

Microstructure and magnetic properties of (0 0 1)-oriented L10 FePt films: Role of Ag underlayer and Fe/Pt ratio

FePt multilayer films were deposited on Si(1 0 0) substrate with thermally grown SiO₂ film and sputtered Ag underlayer at room temperature by dc magnetron sputtering and subsequently annealing in vacuum. Experimental results suggest that proper thickness of Ag underlayer and slightly rich of Fe content can effectively induce the (0 0 1) texture of FePt films. A Fe_57.4Pt_42.6 thin film on the 8 nm Ag underlayer exhibits a large perpendicular coercivity of 7.6 kOe with magnetic remanence close to 1.     

Growth,optical and microstructural properties of PbB4O7 plate crystals

Centimeter-sized optical quality plate-like PbB₄O₇ crystals have been grown by Czochralski method. The fundamental absorption edge has been found at 237 nm (corresponding bandgap 5.75 eV) with the distinct sideband protruding up to 300 nm. The crystals are well faceted with the (1 0 0), (0 1 0) and (1 0 1) planes, (1 0 0) surfaces being mostly developed. The etching in diluted nitric acid (5 wt.%) at the temperature of 90 °C have been used to reveal the defect structure and remove melt residuals. The (1 0 0) surface shows the presence of etching pits and twin boundaries. The Kikuchi line pattern and developed microrelief with the roughness of ∼8 nm have been observed by RHEED and AFM, respectively.     

Study on optical weak absorption of borate crystals

Borate crystal is an important type of nonlinear optical crystals used in frequency conversion in all-solid-state lasers. Especially, LiB₃O₅ (LBO), CsB₃O₅ (CBO) and CsLiB₆O₁₀ (CLBO) are the most advanced. Although these borate crystals are all constructed by the same anionic group-(B₃O₇)⁵⁻, they show different nonlinear optical properties. In this study, bulk weak absorption values of three borate crystals have been studied at 1064 nm by a photothermal common-path interferometer. The bulk weak absorption values of them along [1 0 0], [0 1 0] and [0 0 1] directions were obtained, respectively, to be approximately 17.5 ppm cm⁻¹, 15 ppm cm⁻¹ and 20 ppm cm⁻¹ (LBO); 80 ppm cm⁻¹, 100 ppm cm⁻¹ and 40 ppm cm⁻¹ (CBO); 600 ppm cm⁻¹, 600 ppm cm⁻¹ and 150 ppm cm⁻¹ (CLBO) at 1064 nm. The results showed an obvious discrepancy of the values of these crystals along three axis directions. A correlation between the bulk weak absorption property and crystal intrinsic structure was then discussed. It is found that the bulk weak absorption values strongly depend on the interstitial area surrounded by the B–O frames. The interstitial area is larger, the bulk weak absorption value is higher.     

Combined theoretical studies of the optical characteristics of II-IV-V2 semiconductor thin films

The optical absorbance of four ternary thin films, i.e. MgSiP₂, MgGeP₂, MgSiAs₂, MgGeAs₂ have been theoretically examined over a wide range of wavelength from 300 nm to 800 nm. The combination of first-principle electronic structure calculations and the optical matrix approach for modeling the multilayer assembly have been employed for theoretical studies. The analysis of the calculated absorbance spectra at room temperature with unpolarized light and normal incidence, revealed that MgGeAs₂ with a direct energy band gap of 1.6 eV exhibit a considerable high optical absorption, where a thickness of 3.2 μm of this thin film is sufficient to absorb 90% of the incident light and generates a maximum photocurrent of ∼23 mA/cm².     

A simple perturbative tool to calculate plasmonic photonic bandstructures

We use first order perturbation theory to study the effect of surface plasmon polaritons on the photonic band structure of plasmonic photonic crystals. Our results are based on a simple numerical tool that we have developed to extend the standard frequency domain methods to compute the photonic band structure of plasmonic photonic crystals. For a two-dimensional honeycomb photonic crystal with a lattice constant of 500 nm placed on an aluminium substrate, we show that the band gap for TM modes is enhanced by 13%. Thus a slight variation in the effective dielectric function results in a plasmonic band structure that is not scale-invariant, which is reminiscent of the inherent non-linear properties of the effective dielectric constant.     

Optical characterization of vacuum evaporated CdZnTe thin films deposited by a multilayer method

CdZnTe thin films of thickness 450–1400 nm have been evaporated under vacuum onto unheated glass substrates, using a multilayer method. During film deposition, the two evaporation sources, separated by two glass cylinders, were maintained at temperatures of 720 K for Zn and at 925–1200 K for CdTe, respectively. After deposition, the samples were annealed in air up to 775 K. The structural and optical properties of both as-deposited and heat-treated samples were investigated. Depending on the preparation conditions and the annealing temperature, the value of the optical band gap, E_g, of respective films varied between 1.16 and 1.63 eV. The obtained results are discussed in correlation with the structure of the films and the role of Zn atoms in CdTe films.     

Single crystal growth,structure and properties of TlHgBr3

High-quality inclusion-free single crystals of ternary thallium mercury bromide, TlHgBr₃, were successfully grown by Bridgman–Stockbarger method. For the pristine surface of the TlHgBr₃ single crystal, X-ray photoelectron core-level and valence-band spectra were measured. The comparison on a common energy scale of the X-ray photoelectron valence-band spectrum of TlHgBr₃ and the X-ray emission Br Kβ₂ band, representing peculiarities of the energy distribution of the Br 4p states revealed that the main contribution of the valence Br p states, occurred in the upper portion of the valence band, with also their significant contributions in other valence band regions. It has been determined that TlHgBr₃ is a semiconductor with the bandgap energy value of E_g = 2.51 eV at 100 K. The E_g value decreased up to 2.44 eV when temperature increased to 300 K.     

Ultra-bandwidth polarization splitter based on soft glass dual-core photonic crystal fiber

A novel ultra-bandwidth polarization splitter based on soft glass dual-core photonic crystal fiber (DC-PCF) is designed in this paper, which is analyzed through the finite element method (FEM). The coupling characteristics of the designed DC-PCF can be enhanced by a high refractive index As₂S₃ core. Numerical results show the ultra-bandwidths of the x- and y-polarization modes can reach to 86 nm and 60 nm as the extinction ratios better than −20 dB and −30 dB at the vicinity of the wavelength of 1.31 μm. The length of the designed soft glass DC-PCF is 52.29 mm and the extinction ratios of the x- and y-polarization modes are −85.57 dB and −56.81 dB at the wavelength of 1.31 μm, respectively. In addition, the designed splitter has a tolerance of ±10 nm in its all structure parameters, which make the design not sensitive to the perturbation during the fabrication process.     

A study of manufacturing tubes with nano/ultrafine grain structure by stagger spinning

A new method of manufacturing tubes with nano/ultrafine grain structure by stagger spinning and recrystallization annealing is proposed in this study. Two methods of the stagger spinning process are developed, the corresponding macroforming quality, microstructural evolution and mechanical properties of the spun tubes made of ASTM 1020 steel are analysed. The results reveal that a good surface smoothness and an improved spin-formability of spun parts can be obtained by the process combining of 3-pass spinning followed by a 580 °C × 0.5 h static recrystallization and 2-pass spinning with a 580 °C × 1 h static recrystallization annealing under the severe thinning ratio of wall thickness reduction. The ferritic grains with an average initial size of 50 μm are refined to 500 nm after stagger spinning under the 87% thinning ratio of wall thickness reduction. The equiaxial ferritic grains with an average size of 600 nm are generated through re-nucleation and grain growth by subsequent recrystallization annealing at 580 °C for 1 h heat preservation. The tensile strength of spun tubes has been founded to be proportional to the reciprocal of layer spacing of pearlite (LSP), and the elongation is inversely proportional to the reciprocal of LSP. This study shows that the developed method of stagger power spinning has the potential to be used to manufacture bulk metal components with nano/ultrafine grain structure.     

Luminescence properties of Sn2P2Se6 crystals

A large family of Sn_2yPb_2(1−y)P₂S_6xSe_6(1−x) semiconductor-ferroelectric crystals were obtained by the Bridgman technique. The photoluminescence properties of the Sn_2yPb_2(1−y)P₂S_6xSe_6(1−x) family crystals strongly depend on their chemical composition, excitation energy and temperature. The influence of the Pb → Sn and S → Se isovalent substitutions on the luminescence properties of a crystal with the Sn₂P₂Se₆ basic composition was investigated. A broad emission band observed in the Sn₂P₂Se₆ crystal with a maximum roughly at 600 nm (at T = 8.6 K) was assigned to a band-to-band electron-hole recombination, whereas broad emission bands, peaked near 785 nm (at T = 8.6 K) and 1025 nm (at T = 44 K) were assigned to an electron-hole recombination from defect levels localised within the bandgap. Possible types of recombination defect centres and specific mechanisms of luminescence in the Sn₂P₂Se₆ semiconductor-ferroelectric crystals were considered and discussed on the basis of the obtained results and the referenced data.     

Study of optical properties of GeO2 nanocrystals as synthesized by hydrothermal technique

The GeO₂ nanocrystals (α-quartz type structure) with β-phase are synthesized at relatively lower temperature by hydrothermal route using autoclave. All samples are characterized by XRD, FESEM, EDS, TEM, photoluminescence (PL) and UV–vis absorption spectroscopy techniques. Synthesized nanocrystals have uniform shape and uniform size distribution for a particular synthesis condition, which is about 30–300 nm depending on synthesis conditions. The XRD results indicate that grown GeO₂ crystals only shows peak related to α-quartz structure with lattice parameters a = 4.985 Å and c = 5.648 Å. UV–vis absorption spectroscopy measurements reveal the bandgap energies corresponding to the GeO₂ α-quartz structure. Synthesized nanocrystals are capable to emit strong blue light around 425–435 nm under excitation of 300 nm and 325 nm and consequently the as synthesized material can be used in integrated optical devices.     

Interfacial fracture of dentin adhesively bonded to quartz-fiber reinforced composite

The paper presents the results of an experimental study of interfacial failure in a multilayered structure consisting of a dentin/resin cement/quartz-fiber reinforced composite (FRC). Slices of dentin close to the pulp chamber were sandwiched by two half-circle discs made of a quartz-fiber reinforced composite, bonded with bonding agent (All-bond 2, BISCO, Schaumburg) and resin cement (Duo-link, BISCO, Schaumburg) to make Brazil-nut sandwich specimens for interfacial toughness testing. Interfacial fracture toughness (strain energy release rate, G) was measured as a function of mode mixity by changing loading angles from 0° to 15°. The interfacial fracture surfaces were then examined using Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDX) to determine the failure modes when loading angles changed. A computational model was also developed to calculate the driving forces, stress intensity factors and mode mixities. Interfacial toughness increased from ≈ 1.5 to 3.2 J/m² when the loading angle increases from ≈ 0 to 15°. The hybridized dentin/cement interface appeared to be tougher than the resin cement/quartz-fiber reinforced epoxy. The Brazil-nut sandwich specimen was a suitable method to investigate the mechanical integrity of dentin/cement/FRC interfaces.     

Optical investigations on Tb3+ doped l-Histidine hydrochloride mono hydrate single crystals grown by low temperature solution techniques

The potential nonlinear optical material of Terbium (Tb³⁺) ion doped l-Histidine hydrochloride monohydrate (LHHC) single crystals were successfully grown. Tb³⁺:LHHC crystals of 7 mm × 5 mm × 3 mm and 59 mm length and 15 mm diameter have been grown by the slow solvent evaporation and Sankaranarayanan-Ramasamy (SR) techniques respectively. The grown crystals were characterized by single crystal X-ray diffraction analysis to confirm the crystalline structure and morphology. High resolution X-ray diffraction (HRXRD) studies revealed that the SR grown sample shows relatively good crystalline nature with 9″ full-width at half-maximum (FWHM) for the diffraction curve. Functional groups were identified by Fourier transform infra-red spectroscopy (FTIR). The optical transparency and band gaps of grown crystals were measured by UV–Vis spectroscopy. Thermogravimetric and differential thermal analysis (TG/DTA) studies reveal that the crystal was thermally stable up to 155 °C in SR grown crystal. Surface morphology of the growth plane was observed using scanning electron microscopy (SEM). The incorporation of Tb ion was estimated by EDAX. The frequency-dependent dielectric properties of the crystals were carried out for different temperatures. Vickers hardness study carried out on (1 0 0) face at room temperature shows increased hardness of the SR method grown crystal. Second harmonic generation efficiency of SEST and SR grown crystals are 3.2 and 3.5 times greater than that of pure KDP. The Photoluminescence (PL) studies of Tb³⁺ ions result from the radiative intra-configurational f-f transitions that occur from the ⁵D₄ excited state to the ⁷F_j (j = 6, 5, 4, 3) ground states. The decay curve of the ⁵D₄ level of emission was observed with a long life time of 319.2041 μs for the SR grown Tb³⁺:LHHC crystal.     

Synthesis of silver/poly (diallyldimethylammonium chloride) hybride nanocomposite

This paper presents a method for the preparation of silver nano-particles in poly (diallyldimethylammonium chloride) (PDDA) using N,N-dimethylformamide (DMF) as a medium has been performed successfully. A golden solution in its UV–vis absorption spectrum showed surface plasmon resonance absorption bands between 410 and 425 nm in solutions and at about 461 nm in a transparent film. The Ag/PDDA nano-composite was characterized by X-ray diffraction (XRD) measurement, transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier-transform-infrared spectroscopy (FT-IR) and thermo-gravimetric analysis (TGA). XRD showed the fcc crystal structure of the bulk Ag with particles of <22 nm in size similar to that is observed by TEM and PDDA is crucial to the formation of such silver nano-composite. SEM indicated uniform distribution of particles in the film. TGA confirmed enhanced thermal stability of the polymer.     

The theoretical strength of fcc crystals under multiaxial loading

Atomistic modeling of a special triaxial loading of six perfect fcc crystals is performed by means of pseudopotential density functional method. The triaxial stress state is simulated as a superposition of axial pressure and transverse biaxial stresses. The transverse stresses are treated as adjustable parameters and their influence on the theoretical compressive strength is evaluated for the 〈1 0 0〉 and the 〈1 1 1〉 crystallographic orientations of the loading axis. The obtained results revealed that the compressive strengths are increasing linear functions of the transverse compressive stresses. On the other hand, the tensile transverse stresses lower the compressive strength. This implies that the compressive strengths of individual crystals approach a zero value when some critical (characteristic) levels of tensile biaxial stresses are reached. These stresses are then considered to be the theoretical tensile biaxial strengths.     

Cathodoluminescence study of h- and c-GaN single crystals grown by a Na or K flux

Luminescence properties of hexagonal (h-) and cubic (c-) GaN freestanding single crystals were studied by means of cathodoluminescence spectroscopy. The h-GaN crystals of about 0.2–2 mm in dimension were synthesized at 750 °C by the reaction of Ga and N₂ in a Na flux, while c-GaN crystals of about 0.3 mm or less in a K flux. The h-GaN showed rather strong band edge emission at room temperature compared with the crystal grown by using NaN₃ as a nitrogen source. At 20 K, the band edge emission of h-GaN was split into four peaks. The main energy peak position was 3.478 eV, which was assigned as the A-free exciton emission. The energy position of the main peak of c-GaN was 3.268 eV. Assuming the binding energies of excitons in h- and c-GaN as 25 and 26 meV, respectively, the energy difference of bandgap between h- and c-GaN is estimated to be 209 meV. Since these crystals are free from strain from the substrates, the peak energies are reliable for the intrinsic GaN crystals. The full widths at half maximum of the emission of c-GaN were much broader than those of h-GaN, suggesting that the cubic phase is much defective compared with the hexagonal one.     

RBS,XRR and optical reflectivity measurements of Ti–TiO2 thin films deposited by magnetron sputtering

Single-, bi- and tri-layered films of Ti–TiO₂ system were deposited by d.c. pulsed magnetron sputtering from metallic Ti target in an inert Ar or reactive Ar + O₂ atmosphere. The nominal thickness of each layer was 50 nm. The chemical composition and its depth profile were determined by Rutherford backscattering spectroscopy (RBS). Crystallographic structure was analysed by means of X-ray diffraction (XRD) at glancing incidence. X-ray reflectometry (XRR) was used as a complementary method for the film thickness and density evaluation. Modelling of the optical reflectivity spectra of Ti–TiO₂ thin films deposited onto Si(1 1 1) substrates provided an independent estimate of the layer thickness. The combined analysis of RBS, XRR and reflectivity spectra indicated the real thickness of each layer less than 50 nm with TiO₂ film density slightly lower than the corresponding bulk value. Scanning Electron Microscopy (SEM) cross-sectional images revealed the columnar growth of TiO₂ layers. Thickness estimated directly from SEM studies was found to be in a good agreement with the results of RBS, XRR and reflectivity spectra.