基于矩形微透镜阵列的红外焦平面集成技术研究

微小型化是红外焦平面探测器发展的必然趋势,微小型化将使目前焦平面阵列存在的占空比小、光能利用率低的问题体现的更加明显,针对这一状况,提出一种利用分子间引力的光胶技术将矩形孔径球面微透镜阵列集成于红外焦平面之中。采用几何光学理论分析了微透镜阵列的聚能效应,设计并制作“栅线”和“方孔”双对准标记,采用衍射光栅同轴对准方法使两种器件的对准精度达到0.1?m。对集成前后红外焦平面阵列性能进行测试,发现响应率提高了近40%,探测率提高了约20%,红外焦平面的噪声从758.89?V下降到668.23?V。最终得到结论：光胶法用于两种器件的集成具有耐温性好、变形小、强度高等优点,集成后红外焦平面的探测性能显著提高,有利于探测器微小型化发展。     

用于改善PtSi红外焦平面阵列器件响应特性的长焦距GaAs微透镜阵列器件的制作研究

提出了一种新的曲率补偿法用于长焦距微透镜阵列的制作.扫描电子显微镜(SEM)显示微透镜阵列为表面极为平缓的方底拱形阵列,表面探针测试结果显示用曲率补偿法制作的微透镜的焦距可达到3861.70μm,而常规光刻热熔法很难制作出焦距超过200μm的相同尺寸的微透镜阵列.微透镜阵列器件与红外焦平面阵列器件在红外显微镜下对准胶合,显著改善了红外焦平面阵列器件的响应特性.     

用于改善PtSi红外焦平面阵列器件响应特性的长焦距GaAs微透镜阵列器件的制作研究

提出了一种新的曲率补偿法用于长焦距微透镜阵列的制作。扫描电子显微镜 ( SEM)显示微透镜阵列为表面极为平缓的方底拱形阵列 ,表面探针测试结果显示用曲率补偿法制作的微透镜的焦距可达到 3 861.70 μm,而常规光刻热熔法很难制作出焦距超过 2 0 0μm的相同尺寸的微透镜阵列。微透镜阵列器件与红外焦平面阵列器件在红外显微镜下对准胶合 ,显著改善了红外焦平面阵列器件的响应特性     

固体浸没式红外超表面透镜设计

红外焦平面阵列在各类红外成像系统中发挥着巨大的作用。为提升红外焦平面的工作温度、量子效率和灵敏度,通常使用微透镜阵列作为红外焦平面的聚光器。当前微透镜阵列的制作材料通常与红外探测器材料不同,因此在集成装配时需要额外的工艺手段,工艺难度较大且效率较低。利用微纳光学超表面技术体系,可以在红外探测器衬底材料上直接制作平面式的固体浸没型微透镜阵列,实现前置微透镜与红外焦平面的单片集成。文中以红外探测领域最有潜力的锑化物Ⅱ类超晶格红外探测器为应用目标,设计了一种基于GaSb衬底的固体浸没式红外超表面透镜。设计的超表面透镜在中波红外波段工作,能适用于所有入射偏振。器件设计焦距为100 μm,理论上在目标波长下的最高聚焦效率达到70.7%,数值孔径(NA)达到1.15。该设计可以推动微透镜阵列向扁平、超薄、轻量的方向发展,简化微透镜阵列与红外焦平面阵列的集成工艺,有望提升红外焦平面的探测效率,并降低制造成本。     

用于改善PtSi红外焦平面阵列器件响应特性的长焦距GaAs微透镜阵列器件的制作研究

提出了一种新的曲率补偿法用于长焦距微透镜阵列的制作。扫描电子显微镜（SEM）显示微透镜阵列为表面极为平缓的方底拱形阵列,表面探针测试结果显示用曲率补偿法制作的微透镜的焦距可达到3861．70um,而常规光刻热熔法很难制作出焦距超过200um的相同尺寸的微透镜阵列。微透镜阵列器件与红外焦平面阵列器件在红外显微镜下对准胶合,显著改善了红外焦平面阵列器件的响应特性。     

256×256 Si微透镜阵列与红外焦平面阵列单片集成研究

基于标量衍射理论设计了8位相菲涅尔衍射微透镜阵列.利用多次曝光和离子束刻蚀技术在大规模面阵(256×256)PtSi红外焦平面阵列的背面制作了单片集成微透镜阵列样品(单元面积为30μm×40μm).测试结果表明,单片集成微透镜的红外焦平面阵列样品的信噪比提高了2.0倍.     

256×256Si微透镜阵列与红外焦平面阵列单片集成研究

基于标量衍射理论设计了8位相菲涅尔衍射微透镜阵列.利用多次曝光和离子束刻蚀技术在大规模面阵(256×256)PtSi红外焦平面阵列的背面制作了单片集成微透镜阵列样品(单元面积为30μm×40μm).测试结果表明,单片集成微透镜的红外焦平面阵列样品的信噪比提高了2.0倍.     

长波碲镉汞探测器的原位集成微透镜技术研究

采取原位集成的方式在红外焦平面探测器芯片的入光侧制备微透镜阵列以达到增强信号以及减小串音的作用,通过光学分析获得了匹配不同中心距器件的微透镜结构设计,在长波碲镉汞320×256,50 μm和30 μm中心距的探测器上验证了原位集成的微透镜阵列能够有效地通过汇聚光线,使信号增强分别达到28 %和61 %。对于超高灵敏度红外探测以及SWaP和超大规模红外探测器研究具有重大意义。     

256×256 Si微透镜阵列与红外焦平面阵列单片集成研究

基于标量衍射理论设计了 8位相菲涅尔衍射微透镜阵列 .利用多次曝光和离子束刻蚀技术在大规模面阵( 2 5 6× 2 5 6) Pt Si红外焦平面阵列的背面制作了单片集成微透镜阵列样品 (单元面积为 3 0μm× 4 0μm ) .测试结果表明 ,单片集成微透镜的红外焦平面阵列样品的信噪比提高了 2 .0倍 .     

基于液晶微透镜的自适应红外焦平面探测器

液晶微透镜是一种新型光学器件.通过改变驱动电压,可以灵活快捷地改变其通光孔径、焦距和波前等.设计并得到了一种面阵液晶微透镜器件,讨论了通过将此面阵液晶微透镜与红外焦平面探测器的混合集成,得到具有自适应功能的红外焦平面探测结构.分析了该混合探测结构的性能特点及应用方向.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.