PtSi肖脱基势垒红外焦平面光腔结构的研究

重点介绍PtSi肖脱基势垒红外焦平面光腔的介质生长技术及介质的折射率和介质层厚度对PtSi肖脱基势垒探测器性能的影响,发现适当的合金条件和减薄PtSi层厚度有利于提高探测器的量子效率,背面增加抗反射层能减少红外辐射在入射界面的能量损失.     

离子注入降低PtSi肖特基二极管的势垒高度

PtSi肖特基二极管的势垒高度制约PtSi红外探测器的截止波长和量子效率.在PtSi/Si界面注入In+、B+,采用高浓度、浅层注入避免隧穿效应,用Ar气保护热处理消除注入损伤,附加掩膜层控制离子注入深度,成功地将PtSi肖特基二极管的势垒高度降低到0.15eV.     

高性能PtSi肖特基势垒红外焦平面列阵

本文介绍了PtSi肖特基势垒红外焦平面列阵(PtSi-SBIRFPA)的工作原理,阐述了肖特基势垒探测器的优化结构,分析了器件的优异性能,并给出了量子效率、灵敏度、暗电流、噪声等效温差和转移效率的典型曲线,评述了国内外PtSi-SBIRFPA的发展。     

新型的最佳IR—SBD光腔结构

文中分析提高2～6μm光谱区工作的PtSi肖特基势垒红外探测器(IR-SBD)背照光子吸收率及量子效率等参数的改进途径。选择适当的PtSi厚度、AR膜,并采用离子注入和计算机技术,可进一步使已发展成熟的IR-SBD结构最佳。背照的反射可低达15～19%,ψ_(ms)可降至0.18eV,有效工作波长可延伸到6.0μm,量子效率达5.0～6.5%,暗电流特性也得到改善。     

高性能肖特基势垒IR-CCD摄像传感器(特邀)

研制了32×63和64×128像素高性能PtSi和Pd_2Si肖特基势垒IR-CCD摄像传感器。80K下工作的PtSi肖特基势垒探测器(SBD_S)在3～5μm光谱区内具有百分之几的量子效率,截止波长6.0μm。工作在120～140K之间的Pd_2Si SBD_s在1.0～2.5μm光谱区的量子效率为1.0～8.0%,截止波长3.6μm。用64×128像素PtSi肖特基势垒IR-CCD摄像器件在60帧/秒的与IR兼容的TV摄像机中已经摄出了高质量的热像。用Pd_2Si肖特基势垒IR-CCD摄像传感器还得到了质量良好的SWIR反射红外摄像。     

碲镉汞红外探测器量子效率计算研究

首先分析了量子效率计算的相关方法,然后分析红外碲镉汞探测器测试过程。对器件进行电学性能测试及光谱响应测试基础上,利用测试方法和测试数据计算出探测器产生的电子数。再将实际电子数与理论分析的光子数相比,计算出探测器对不同红外波段量子效率,最高可达66 %,达到了国外同类型器件响应的量子效率指标。本文的研究为评价碲镉汞探测器的光电转换性能提供了一种有效的方法。     

铱硅(IrSi)肖特基势垒红外探测器

除Pd_2Si、PtSi肖特基势垒红外探测器外,最近几年又发展了一种新型的IrSi肖特基势垒红外探测器。据1982年《Trans.IEDM》报导:IrSi肖特基势垒红外探测器,势垒高度小于0.16eV(P—Si),工作温度45～65K。其有用波长已超出了早期Pd_2Si、PtSi肖特基势垒红外探测器达到的1～5μm极限,IrSi探测器由于     

PtSi红外探测器截止波长延长研究

讨论了将PtSi红外探测器截止波长延长的理论基础,并介绍了采用在衬底掺入T1^ 和Ir^ ,MBE生长P^ 层以及低能离子入注B^ ,In^ 未延长PtSi红外探测器截止波长的三种方法。     

多孔硅上生长Ge量子点的光学特性

采用量子尺寸的多孔硅作为衬底,利用区域优先成核在多孔硅表面上成功地生长了Ge量子点.由于量子限制效应锗的PL谱发生了明显的蓝移,计算表明在傅里叶红外光谱中观察到的中红外(5-6μm)吸收峰是源于量子点中的亚能带跃迁(两个重空穴能级之间的跃迁),这为Ge量子点红外光探测器的应用提供了理论基础.     

长波量子阱红外光电探测器金属光栅耦合的研究——基于金属表面等离子效应

采用时域有限差分法研究了二维金属光栅量子阱红外探测器的电磁场分布,研究表明充分利用金属表面等离子效应可显著提高量子阱红外探测器光耦合效率.研究还表明,对于8μm长波量子阱红外探测器,金属光栅结构选取圆孔直径与光栅周期比为0.8 ～0.9是最有益的,此时可获得最大的光耦合效率.     

PtSi薄膜超薄化及连续性研究

减薄膜厚有利于提高ＰｔＳｉ红外探测器的量子效率。本文研究了膜厚减薄工艺对薄膜连续性的影响。用ＸＲＤ观察物相,ＳＥＭ、ＴＥＭ研究薄膜连续性,并给出理论解释,实验表明用混合生长（Ｓ－Ｋ）模式能形成超薄连续薄膜。     

PtSi／p－Si肖特基势垒红外探测器的研制

介绍了ＰｔＳｉ／ｐ－Ｓｉ肖特基势垒红外探测器（简称ＩＲ－ＳＢＤ）的优化结构及探测机理，给出了探测器的光增益模型，并对器件进行了制作及性能测试。器件在７７Ｋ下，反偏４Ｖ时的反向漏电流为５×１０（－６）μＡ，对１．５２μｍ红外光的灵敏度为２．６９×１０（－２）Ａ／Ｗ，量子效率为２．４％。     

A wide spectral band photodetector with PtSi/p-Si Schottky-barrier

The photoresponse of a front-illuminated PtSi Schottky-barrier detector is measured in the wavelength range between 0.4 and 5.2μm. In the wavelength range longer than 1.1μm, the detection mechanism is the internal photoemission. On the other hand, the intrinsic mechanism becomes dominant in the wavelength range shorter than 1.1μm. The measured data are in good agreement with values calculated from these two detection mechanisms. The photoresponse depends on the PtSi thickness in both wavelength ranges. For getting a high responsivity, it is important to make a thin uniform metal film. The visible and the thermal image with a PtSi Schottky-barrier wide spectral band imager are also demonstrated.     

离子注入降低PtSi肖特基二极管的势垒高度

Pt Si肖特基二极管的势垒高度制约 Pt Si红外探测器的截止波长和量子效率 .在 Pt Si/Si界面注入 In+ 、B+ ,采用高浓度、浅层注入避免隧穿效应 ,用 Ar气保护热处理消除注入损伤 ,附加掩膜层控制离子注入深度 ,成功地将 Pt Si肖特基二极管的势垒高度降低到 0 .1 5e V.     

Diffractive Microlens Array Monolithic Integration with PtSi Focal Plane array

Diffractive microlens arrays can completely collect the light at the focal plane and concentrate it into a smaller spot size on the detector plane, the photodetector area can be substantially reduced. Increased gamma radiation hardening and noise reduction result from the decrease in photodetector sensitive area. The diffractive microlens arrays have been designed by considering the correlative optical and processing parameters for PtSi focal plane array. They have been fabricated on the backside of PtSi focal plane array chip by successive photolithography and Ar⁺ ion-beam-etching technique. The alignment of microlens array with PtSi focal plane array was completed by a backside aligner with IR light source. The practical processes and fabrication method are discussed. The performance parameters of PtSi FPA with diffractive microlens array are presented.     

硅化铂红外焦平面探测器的特点与应用潜力分析

硅化铂红外焦平面探测器具有规模大、均匀性好、响应光谱宽、制造成本低、性能稳定等优点,但也存在着光电转换量子效率低、探测元填充因子小等不足.根据这些特点与红外成像仪的应用需求,分析了硅化铂红外焦平面探测器的特点与应用方向--大面积红外成像侦察与监视、多光谱/宽光谱成像、低成本红外成像制导、强光探测、科学和工业红外测试仪器等.     

A silicon homojunction infrared detector having an active metalfilm on an n++ layer

A silicon n⁺⁺pn homojunction infrared detector, in which a degenerate n⁺⁺ layer is backed by a metal film forming an ohmic contact, has been proposed and studied. The metal film is a photoelectric conversion region along with the n⁺⁺ layer. Although, for an n⁺⁺pn detector without the metal film, very poor rectifying properties are observed when the n⁺⁺ layer thickness is extremely reduced, the new detector, employing a thin PtSi film as the metal film, shows normal diode I-V characteristics, since the PtSi film provides increased surface conductivity. The new detector has achieved an increase in operatable temperature, or an extension of cutoff wavelength, and operated with cutoff wavelengths of 11.9 μm, 18.7 μm and about 30 μm at 70 K, 50 K, and 30 K, respectively, because the saturation current density for the new detector has been reduced to about one tenth that for the previously reported n⁺⁺pn detector. The responsivity for the new detector has increased to 1.1-3.8 times as large as that for the previously reported n⁺⁺pn detector, when both detectors have the same cutoff wavelength     

128×128 element PtSi infrared CCD image sensor

A new 128×128 element PtSi Schottky barrier infrared image sensor with ITCCD readout structure and PtSi thin film optical cavity detector structure has been fabricated,which has 50μm×50 μm pixels,a fill factor of 40 percent,the nonuniformity of 5% or less and the dynamic range of over or equal to 50 dB.The noise equivalent temperature difference is 0.2 K with f/1.0 optics at 300 K background. In this paper,the principle of operation,design consideration and fabrication technology for the device are described.     

硅基红外焦平面阵列技术的新进展(Ⅰ)

主要介绍以硅为衬底的非本征硅、金属硅化物（Ｐｄ２Ｓｉ，ＰｔＳｉ和ＩｒＳｉ）肖特基势垒红外探测器、ＧｅｘＳｉ１－ｘ／Ｓｉ异质结内光电发射红外探测器、硅基红外图象传感器、硅微测辐射热计等红外探测器焦平面阵列的新进展     

PtSi探测器的长波红外工作

通过使用分子束外延生长技术在ＰｔＳｉ／Ｓｉ界面上加进一足够薄的高掺杂浓度峰，可使ＰｔＳｉ肖特基红外探测器的截止波长延伸至长波红外范围。