共查询到16条相似文献,搜索用时 109 毫秒
1.
2.
随着锗太阳能光伏产业的发展,锗抛光片得到了广泛的应用。机械强度对锗衬底抛光片的质量和成品率有着重要的影响,采用化学腐蚀工艺,通过酸碱腐蚀实验的开展以及腐蚀温度、腐蚀液配比的控制,确立了提高锗单晶片机械强度的化学腐蚀工艺,腐蚀后晶片表面均匀,磨削纹路清晰可见,TTV小于3μm,机械强度为31-40N,完全满足应用要求。 相似文献
3.
超薄硅双面抛光片抛光工艺技术 总被引:2,自引:0,他引:2
MEMS器件、保护电路、空间太阳电池等的制作需要使用硅双面抛光片,并且要求抛光片的厚度很薄,传统的硅抛光片加工工艺已经不能满足这一要求.介绍了一种用于超薄硅单晶双面抛光片加工的抛光工艺方法.通过对硅片抛光机理[1],抛光方式、抛光工艺的研究和对抛光工艺试验结果的分析,解决了超薄硅单晶双面抛光片在加工过程中碎片率高、抛光... 相似文献
4.
5.
因磨削工艺不同导致Ge单晶片表面粗糙度出现很大差异,并最终影响抛光速率、抛光片的表面质量及抛光片时间依赖性雾的形成。粗糙度大的磨削片,初始抛光速率快,但抛光片达到镜面所需时间却延长。在抛光后的去蜡工序中,粗糙度大的Ge片其表面更容易粘附蜡液而导致表面质量下降。检验合格的抛光片在存储过程中表面出现时间依赖性雾,分析了时间依赖性雾的形成原因是由于粗糙的背表面更容易存储水份和有机溶剂。要提高抛光片的质量必须控制磨削片的粗糙度。 相似文献
6.
7.
8.
9.
10.
11.
研究了不同的抛光方法(机械抛光、化学腐蚀及化学机械抛光)对硅基板上沉积的Pb_(1-x)Ge_xTe薄膜性能的影响.研究表明,经化学机械抛光(SiO_2胶体或Cr~+)的硅基板上所沉积的Pb_(1-x)Ge_xTe薄膜具有致密的结构及平直的界面,其沉积速率也比在化学腐蚀抛光表面的沉积速率大7%或18%(分别对应<111>和<100>晶向);薄膜具有明显高于化学腐蚀抛光基板沉积薄膜的折射率,且折射率随温度的降低而增加,而低温下折射率随波长的增加而增加;化学腐蚀抛光基板沉积薄膜的折射率的增加量明显大于化学机械抛光基板沉积薄膜的增加量;薄膜层经机械抛光后,其膜层结构、组分及其深度分布均未改变,但透射率增加,消光系数有所改善,折射率有所降低. 相似文献
12.
Chen S. Tsai C.Z. Wu E. Shih I.G. Chen Y.N. 《Advanced Packaging, IEEE Transactions on》2006,29(1):149-157
Die cracking is an annoying problem in the packaging industry. In this paper, we identified the weak regions, in terms of mechanical strength, in chips in a semiconductor wafer using the three-point bending test. The weak regions were observed in two sectors approximately 45/spl deg/ wide, axisymmetric to the wafer center. The strength of the chips within these weak regions was about 30%-35% lower than the average chip strength of the whole wafer. The existence of these weak regions was related to spiral grinding marks, which, in turn, were formed by backside mechanical grinding. The probability distributions of the chip strength and the chip fragmentary pattern confirmed this relationship. When wafers were mechanically ground until they were 50-/spl mu/m thick, chip warpage was found to be oriented to the direction of the grinding marks. Meanwhile, by slowing the mechanical grinding speed by 50%, we were able to increase the average chip strength by 56%. Either plasma etching or polishing after mechanical grinding eliminated the weak regions, and the optimal amount of mechanical grinding and the polishing depths were observed, beyond which the chip strength would not increase. On the other hand, a preprocess for blunting a new saw blade for chip dicing was found to be essential as the chip strength increased five-fold, whereas increasing the dicing speed or using dual saw instead of a single saw had only small effects on the chip strength degradation. 相似文献
13.
熔石英抛光表面结构的蚀刻和热处理表征 总被引:3,自引:2,他引:1
利用HF蚀刻和热处理,结合原子力显微(AFM)分析,对传统抛光和磁流变抛光的表面结构进行了表征。为了分析热处理凸起的形成源,抛光表面在热处理前分别采用超声清洗、化学沥滤和HF蚀刻三种不同的表面处理技术进行处理,去除了不同表面材料。蚀刻形貌和热处理形貌及其关联性表明,传统抛光表面存在着大量纳米级缺陷,这些缺陷由易于诱导激光损伤的纳米级微裂纹和颗粒状分布的抛光杂质组成。结合抛光机制的分析,建立了传统抛光表面的微裂纹-颗粒杂质结构模型。 相似文献
14.
锗外延片表面的雾、水印及点状缺陷等会影响太阳电池的性能和成品率,其中点状缺陷出现的比例最高。研究了锗抛光片清洗工艺对外延片表面点状缺陷的影响,获得了无点状缺陷、低粗糙度及高表面质量的锗单晶片。采用厚度为175μm p型<100>锗单面抛光片进行清洗试验,研究了SC-1溶液的不同清洗时间、清洗温度和去离子水冲洗温度对锗抛光片外延后点状缺陷的影响,分析了表面SiO_2残留和锗片表面粗糙度对外延片表面点状缺陷的影响。结果表明点状缺陷主要是由于锗单晶抛光片表面沾污没有彻底清洗干净以及清洗过程中产生新的缺陷造成的。采用氢氟酸溶液浸泡、SC-1溶液低温短时间清洗结合低温去离子水冲洗后的锗抛光片进行外延,用其制备的太阳电池光电转换效率由原来的25%提高到31%。 相似文献
15.
碲镉汞(HgCdTe)红外探测器制备中的化学-机械抛光工艺会在碲镉汞材料表面形成一定深度的损伤层。用溴-甲醇化学机械抛光取代溴腐蚀工艺,有效地降低了抛光过程所产生的表面损伤。在溴-甲醇抛光工艺中,可变参数有溶液的浓度比、抛光时间、转盘转速等,不同的参数组合对于抛光效果有不同的影响,经过正交试验可以以较少的试验次数高效经济地得到最佳的溴-甲醇抛光工艺参数组合。以该优化参数进行抛光所得到的碲镉汞材料通过XRD测试以及Ar+刻蚀后表面形貌的测试表明,HgCdTe晶片表面剩余损伤大大减小。 相似文献
16.
ZHANG Bao-sen CHEN Yang 《半导体光子学与技术》2006,12(2):81-84,94
The conception of the soft layer during chemical mechanical polishing(CMP) was proposed for the first time. The soft layer was a reaction layer formed on the silicon surface; it was softer than the silicon substrate and its thickness was about several nanometers. The existence of the soft layer could increase the material volume removed by one particle and increase the material removal rate during CMP. At the same time, the soft layer could decrease the cutting depth of the abrasive particle so as to realize ductile grinding, and it is useful to decrease the roughness of the polished surface and to improve the polishing quality. 相似文献