制备软X光多层膜的转速控厚法

本文提出了一种新的监控软X光多层膜膜厚的方法——转速控厚法,利用这种方法镀制的设计周期厚度分别为8.4和10nm,周期数达50对和30对的W/C多层膜,经小角X光衍射测试,结果表明周期厚度随机误差在0.1nm左右。     

小角衍射法精确测定Mo/Si软X射线多层膜的结构

通过对周期性Mo/Si多层膜Cu靶K_(?)线小角衍射曲线的分析,并进一步采用对局部曲线进行分步数值拟合的方法,确定了多层膜的结构参数及界面质量。估算了多层膜样品在λ=20nm附近的正入射反射率接近10％。     

多层膜周期厚度的精确计算

布拉格修正公式可以用于计算基底是平面的软X射线多层膜周期厚度,但对于基底是曲面的多层膜,小角X射线衍射峰角度常常发生漂移,用该公式计算的周期厚度就与实际周期厚度不一致。分析了衍射峰角度位置漂移现象,对以布拉格公式为基础的多层膜周期厚度计算公式进行了修正,实验结果显示,利用修正公式获得的多层膜周期厚度比较接近多层膜实际周期厚度。     

软X射线多层膜光栅

详细介绍了软X射线多层膜光栅的国内外发展概况和广阔的应用领域，全面分析了它的制作工艺，并指出制作多层膜光栅的关键技术及解决方案。     

磁控溅射Ge/Si多层膜X射线低角衍射界面结构分析

本文对磁控溅射不同结构的Ｇｅ／Ｓｉ多层膜样品进行了Ｘ射线衍射的测试和分析,并进一步采用有过渡层的光学多层膜衍射模型对衍射谱进行了拟合;获得了扩散层厚度和分层厚度等多层膜的结构参数,定性讨论了多层膜中互扩散与分层厚度铁关系。计算结果与实验结果符合较好。     

长波长软X射线多层膜的设计与制备

“长波长软X射线多层膜的设计与制备”这篇论文介绍了用离子束溅射法制备长波长软X射线多层膜的研究工作,并报道了一种新的材料组合C/Si用于28.4nm(43. 65eV)和30.4nm(40.78 eV)波段的多层膜反射镜,并且用离子束溅射装置制备了正入 射条件下的C/Si多层膜反射镜.同时,用软X射线反射计测量了样品的反射率,从实验结果看出,制备的多层膜样品在28.4nm和30.4nm波段附近的实测正入射反射率分别达到11.4%和14.3%,实验指标达到了国内领先水平,并接近了国际水平.     

X射线多层反射膜

评述X射线多层反射膜原理、现状和问题。讨论了投影X射线光刻和X射线毛细管放电重复率激光器所用的反射镜。     

90年代多层膜软X射线反射镜的发展状况与未来动向

1　引言　　多层膜软 X射线反射镜简单地说是从E.Spiller开始 ,由 T.W.Barbee,Jr,A.V.Vinogradov,J.H.Underwood等人建立的基础 ,后来又有众多研究人员加入到此多层膜软 X射线反射镜的研究和应用研究中 ,不仅实现了反射镜的高品质化 ,而且还将其应用于分光、聚光、X射线望远镜、X射线显微镜、X射线激光器、激光核聚变等离子体观察、X射线缩小曝光 (极紫外光刻 )等 ,还开发了用于 X射线光束分离器、多层膜衍射光栅、超级反射镜、软 X射线偏光子等的元件 ,并取得了一定成果 ,到了 2 0世纪 90年代 ,多层膜软 X射线反射镜的品质 ,尤其…     

常用材料软X射线多层膜的全波段设计

利用薄膜光学理论及材料在软X射线波段的原子散射因子,设计了大批量的软X射线多层膜的计算程序,对常用材料的膜系配对进行了优化设计,给出的结果对软X 射线整个波段内的多层膜膜系的选择有一定的指导意义。     

双晶x射线衍射法测量超薄层外延材料厚度

介绍了通过双晶ｘ射线衍射测量超薄外延层厚度的一种方法。利用回摆曲线中的干涉条纹测量了通过ＭＢＥ生长的Ｇａ０．７Ａｌ０．３Ａｓ／Ｇａ０．９Ａｌ０．１Ａｓ／Ｇａ０．７Ａｌ０．３Ａｓ结构的各层层厚。     

In Situ Observation of Strain Development and Porosity Evolution in Nanoporous Gold Foils

The formation of nanoporous gold by open circuit dealloying of 100 nm AgAu foils in nitric acid is investigated in situ and in real time by combining synchrotron small angle X‐ray scattering (SAXS) and X‐ray diffraction (XRD). The time dependence of the dealloying is followed as a function of acid concentration. For all concentrations, several characteristic dealloying stages are observed. Firstly, there is a fast initial dissolution stage with an increase in surface area due to pore and mound formation; this leads to strain in the nanoporous gold that results from an increase in capillary pressure. After dissolution is complete, there is rapid coarsening of the quasi‐periodic, pore–ligament morphology. During this later stage, we deduce strong strain anisotropies that can be explained by preferred crystallographic orientation of ligaments. This rapid coarsening stage is followed by a slow coarsening stage where the SAXS patterns, and hence the quasi‐periodic morphology, is self‐similar in time. There is a strong correlation between the morphology evolution and strain development, which can be explained by capillary forces.     

软X射线多层膜元件研究进展

对各国进行的软Ｘ射线多层膜研究所取得的最新成果给出了比较系统全面的评述，首次给出了文献报道的软Ｘ射线全波段的各种膜系实测正入射反射率的统计结果。     

Influence of Transited Layer of Multilayer on X-ray Diffraction Intensity and Calculation of the Thickness

This paper integrates the roughness with the diffuse layer as a transited layer factor for study of influence of the practical interface on the X-ray diffraction intensity of multilayer. By the study of a simple model of transited layer presented in this paper, it is given a formula to describe the quantitative relation of the transited layer with the X-ray diffraction intensity. The calculated thickness of transited layer of Mo/Si multilayer is given, which is consisted with the values measured with the high resolution microscopy.     

X射线衍射、X射线光电子能谱对PtSi薄膜形成机理的研究

促使物相尽可能地向Pt2Si和PtSi 转化,是PtSi薄膜工艺研究中的重要工作。文中通过用X射线衍射（ XRD）、X射线光电子能谱（XPS）微观分析手段对PtSi薄膜形成物相分步观察,研究了长时间变温退火、真空退火以及真空和保护气体（N2和H2）退火等工艺条件对溅射PtSi薄膜物相形成的影响。结果表明,氢气气氛退火能提高薄膜质量;真空退火可以减少氧元素对成膜的影响。     

有源层厚度对CuPc-OTFT器件性能的影响

研究了不同厚度有源层的顶电极CuPc-OTFT器件的电学特性。发现器件的性能与有源层厚度有依赖关系，其中，有源层厚度为20nm的器件性能最好。在有源层厚度大于20nm时，有源层厚度的增大不但分去一部分栅电压而且还增大了源、漏电极的接触电阻，从而不利于器件性能的提高。但当有源层厚度小于20nm以后器件的性能开始降低。我们认为当有源层厚度降低到一定程度时，有源层上表面的表面态会使有机材料的隙态浓度增加从而对沟道载流子迁移率产生不良影响以及使器件的阈值电压增大。     

小径管道射线探伤技术中源侧缺陷的放大

目的研究射线探伤中投影成象对缺陷的放大作用;方法根据管道的射线成象原理,分析投影成象对管道中缺陷的放大;结果由于射线源侧缺陷与胶片侧(转换屏)缺陷距胶片(转换屏)的距离不同,造成射线源侧缺陷在底片上所成的象比实际缺陷尺寸有一定的放大;结论在小直径(〈76mm)管道射线底片评级时,应考虑缺陷在管道中所处的大致位置及对应的放大系数.     

Effects of TiN Buffer Layer Thickness on GaN Growth

Smooth GaN layers were successfully grown on metallic TiN buffer layers by metalorganic chemical vapor deposition (MOCVD). One important factor in controlling GaN layer smoothness was the TiN layer thickness. We investigated systematically the effects of this thickness, and found an optimal thickness of 5 nm, at which the smallest average grain size (20 nm) and smoothest surface were obtained. The TiN layers increased surface coverage with GaN hexagons at an early stage of GaN growth, indicating that enhancing the GaN nucleation is essential for smooth GaN layer growth, and small grain size and smooth surface are needed to enhance GaN nucleation. Further reduction in TiN layer thickness to 2 nm decreased the surface coverage with GaN hexagons, and a high density of grooves and holes were observed in the surface of the 2-μm-thick GaN layers. Defect structures in the GaN layers grown on the TiN layers were remarkably changed on reduction of TiN layer thickness from 5 nm to 2 nm. GaN growth was found to be sensitive to the TiN layer thickness between 2 nm and 5 nm.     

Role of Side‐Chain Branching on Thin‐Film Structure and Electronic Properties of Polythiophenes

Side‐chain engineering is increasingly being utilized as a technique to impact the structural order and enhance the electronic properties of semiconducting polymers. However, the correlations drawn between structural changes and the resulting charge transport properties are typically indirect and qualitative in nature. In the present work, a combination of grazing incidence X‐ray diffraction and crystallographic refinement calculations is used to determine the precise molecular packing structure of two thiophene‐based semiconducting polymers to study the impact of side‐chain modifications. The optimized structures provide high‐quality fits to the experimental data and demonstrate that in addition to a large difference in interchain spacing between the two materials, there exists a significant disparity in backbone orientation as well. The calculated structures are utilized in density functional theory calculations to determine the band structure of the two materials and are shown to exhibit a dramatic disparity in interchain dispersion which accounts for the large observed difference in charge carrier mobility. The techniques presented here are meant to be general and are therefore applicable to many other highly diffracting semicrystalline polymers.