1,4-双(氯甲基)-2-甲氧基-5-辛氧基苯及聚合物的合成

由对甲氧基苯酚（ＭＯＰｈ）合成出一种可溶性电致发光共轭聚合物聚（２－甲氧基－５－辛氧基）亚苯基亚乙烯（ＰＭＯＯＯＰＶ）大致过程为：由ＭＯＰｈ与１－溴辛烷合成１－甲氧基－４－辛氧基苯（ＭＯＯＯＢ）继而合成了１,４－双（氯甲基）－２－甲氧基－５－辛氧基苯（ＢＣＭＭＯＯＯＢ）碱性聚合得可溶性ＰＭＯＯＯＰＶ。并做了ＢＣＭＭＯＯＯＢ与其它单体的共聚,对中间体及聚合物用＾１ＨＮＭＲ进行了表征。     

共轭聚合物的合成研究

合成了聚（２－甲氧基－５－丙氧基－１,４－亚苯基亚乙烯）（ＰＭＯＰＯＰＶ）、聚（２－甲氧基－５－丁氧基－１,４－亚苯基亚乙烯）（ＰＭＯＢＯＰＶ）、聚（２－甲氧基－５－庚氧基－１,４－亚苯基亚乙烯）（ＰＭＯＨＯＰＶ）３种共轭聚合物并对其合成全过程进行了研究。结果表明,聚合时间为３０ｈ,反应温度为室温,ＰＨ值为１４,ＰＭＯＰＯＰＶ不溶于ＣＨＣｌ３,地产物进行了表征并讨论了反应历程。     

碳纤维表面涂碳及涂碳后纤维强度测定

用４－甲氧基苯酚经醚化、氯甲基化、消除反应合成出不熔但可溶的聚（２－甲氧基－５－辛氧基）对亚苯基亚乙烯（ＰＭＯＯＯＰＶ）。用ＰＭＯＯＯＰＶ的ＣＨＣｌ３溶液浸涂碳纤维（ＣＦ）,然后在７７３Ｋ碳化,得到亮黑色且分散性很好的涂碳ＣＦ。单纤维平均拉伸强度（σ）测定结果表明,与未涂碳的ＣＦ（σ＝２９７７．８ＭＰａ）相比较,用０．１％ＰＭＯＯＯＰＶ浸涂的ＣＦσ＝３９０８．２ＭＰａ,用０．２％ＰＭＯＯＯＰＶ浸涂的ＣＦσ＝５０３１．２ＭＰａ,并浸涂后强度离散系数、平均矢径等有规律地变小。     

以N—乙基—4—乙酰胺基—1,8—萘亚胺为发光层的电致发光二极管

合成了Ｎ乙基４乙酰胺基１，８萘亚胺（ＮＡ）。结果表明，以ＮＡ为发光层，聚乙烯咔唑（ＰＶＫ）为空穴传输层的多层薄膜发光器件Ａｌ／ＮＡ／ＰＶＫ／ＩＴＯ，在正相驱动电压为２７５Ｖ时，可获得１５０ｃｄ／ｍ２的Ｎ乙基４乙酰胺基１，８萘亚胺（ＮＡ）的黄绿光。     

接枝交联明胶的研究（I）甲基丙烯酸与明胶的接枝共聚反应

首次以ＫＰＳ－ＮａＨＳＯ３为引发体系，Ｎ，Ｎ＇－甲叉双丙烯酰胺为交联剂，甲基丙烯酸（ＭＡＡ）为接枝单体，研究了接枝共聚反应规律，制得了接枝交联明胶（Ｇｅｌｘ－ｇ－ＰＭＡＡ）。     

主链柔顺性对侧链液晶聚合物液晶性能的影响

由对羟基苯甲酸与对羟基甲醚反应得到了４－甲氧基－４’－羟基苯甲酸苯酯（ＭＰＨＢ）,ＭＰＢＨ再分别与环氧氯丙烷和甲基丙烯酰氯反应生成４－甲氧基－４’－（２,３－环氧丙基氧）苯甲酸苯酯（ＭＰＥＢ）和４－甲氧基－４’－甲基丙烯酰氧苯甲酸苯酯（ＭＰＭＡＢ）。用阳离子和自由基聚合法聚合得到了具有相同液晶元而主链结构和间隔基不同的聚合物ＰＭＰＥＢ和ＰＭＰＭＡＢ。用ＤＳＣ、热台偏光显微镜和Ｘ射线衍射仪对合成的聚     

Sol-Gel法制备TiO2/PVP纳米复合材料薄膜及性能研究

以钛酸丁酯和聚乙烯吡咯烷酮（ＰＶＰ）为原料,采用ｓｏｌ－ｇｅｌ法制备了ＴｉＯ２／ＰＶＰ纳米复合材料,以原子力显微镜（ＡＦＭ）和红外光谱告示测试方法分别研究了薄膜的表面形貌和材料的结构。结果表明,薄膜表面非常光滑,高度差公为２～５ｎｍ左右,在波数１０９５ｃｍ＾－１处在吸收谱带是Ｔｉ－Ｏ的非对称伸缩振动所产生;同时研究了ＴｉＯ２／ＰＶＰ的介电常数和光致变色性能。     

高韧性PMR聚酰亚胺复合材料树脂基体的研究

本工作以ＯＤＰＡ取代ＰＭＲ－１５中的ＢＴＤＥ即以ＯＤＰＡ，ＭＤＡ，ＮＥ作为复合材料对脂基体，对纤维存在下的该树脂基体的的反应性及复合材料的制备和性能测试进行了研究。实验结果表明，同ＰＭＲ－１５相比，该树脂基体具有更优的反应性，该树脂基体复合材料具有更优的层间断裂韧性。     

以陶瓷厚膜为绝缘层的电致发光器件研究

研制了以四元系组分ＰＭＮ－ＰＴ－ＰＦＮ－ＰＣＷ陶瓷厚膜为绝缘层的电致发光器件，对陶瓷厚膜的制备条件和制得的厚膜与器件的发光性能的关系进行主详细的研究。特别对基片要求和印刷烧制等工艺进行了探讨。     

溶胶—凝胶法制备可溶性聚酰亚胺／二氧化硅纳米复合材料的研究：I.溶胶— …

选取可溶性聚酰亚胺（ＰＩ）作为有机高聚物基体,通过正硅酸四乙酯（ＴＥＯＳ）在聚酰胺酸（ＰＡＡ的Ｎ－甲基－２－吡咯烷酮（ＮＭＰ）溶液中进行溶胶－凝胶反应,制备出新型的聚酰亚胺／二氧化硅（ＰＩ／ＳｉＯ２）纳米复合材料。并用ＵＶ－Ｖｉｓ、ＸＰＳ、ＩＲ和ＳＥＭ等方法对其溶液－凝胶转变过程和水解＝缩合反应机理进行了研究。结果表明,在水解－缩合反应过程中,ＴＥＯＳ与聚酰胺酸发生反应,生成较为稳定的中间产物;在     

A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers

The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.     

Structural effects of a light emitting copolymer having perylene moieties in the side chain on the electroluminescent characteristics

We have synthesized a novel side chain light emitting copolymer. The side chain light emitting copolymer has a perylene moiety as an emitting unit and methylmethacrylate (MMA) as a spacer to decrease the concentration quenching of light emitting site in the polymer intrachain. These polymers are very soluble in most organic solvents such as monochlorobenzene, tetrahydrofuran, chloroform and benzene. The single-layered electroluminescent (EL) device consisting of ITO/carrier transporting copolymer and light emitting copolymer/Al was manufactured. The carrier transporting copolymer has triphenylamine moiety as a hole transporting unit and triazine moiety as an electron transporting unit in the polymer side chain. This device exhibits maximum external quantum efficiency when the MMA contents of light emitting copolymer is 30 wt.%. In particular, the device emits more blue light as MMA contents increase.     

Introduction of Red‐Green‐Blue Fluorescent Dyes into a Metal–Organic Framework for Tunable White Light Emission

The unique features of the metal–organic frameworks (MOFs), including ultrahigh porosities and surface areas, tunable pores, endow the MOFs with special utilizations as host matrices. In this work, various neutral and ionic guest dye molecules, such as fluorescent brighteners, coumarin derivatives, 4‐(dicyanomethylene)‐2‐methyl‐6‐(p‐dimethylaminostyryl)‐4H‐pyran (DCM), and 4‐(p‐dimethylaminostyryl)‐1‐methylpyridinium (DSM), are encapsulated in a neutral MOF, yielding novel blue‐, green‐, and red‐phosphors, respectively. Furthermore, this study introduces the red‐, green‐, and blue‐emitting dyes into a MOF together for the first time, producing white‐light materials with nearly ideal Commission International ed'Eclairage (CIE) coordinates, high color‐rendering index values (up to 92%) and quantum yields (up to 26%), and moderate correlated color temperature values. The white light is tunable by changing the content or type of the three dye guests, or the excitation wavelength. Significantly, the introduction of blue‐emitting guests in the methodology makes the available MOF host more extensive, and the final white‐light output more tunable and high‐quality. Such strategy can be widely adopted to design and prepare white‐light‐emitting materials.     

Fabrication and characteristics of vertical type organic light emitting transistor using novel blue host material

Vertical type organic light emitting transistor can perform as electroluminescence device as well as driving transistor. As the light emitting transistor containing vertical deposited configuration can control its own luminescence intensity, the device circuit can be simplified. In the present work, we have fabricated vertical type organic light emitting transistors consisting of Al(source)/C60/Al(gate)/C60/Bphen/TAT:FIrpic/CuPc/ITO(drain)/glass(substrate). TAT(9,10-bis(3",5"-diphenylbiphenyl-4'-yl)anthracene) and FIrpic were used as blue host material and phosphorescent dopant material, respectively. Relatively high radiance and on-off ratio were observed in the device using LiAl metal as source and gate electrodes.     

Inorganic Nano Light‐Emitting Transistor: p‐Type Porous Silicon Nanowire/n‐Type ZnO Nanofilm

An inorganic nano light‐emitting transistor (INLET) consisting of p‐type porous Si nanowires (PoSiNWs) and an n‐type ZnO nanofilm was integrated on a heavily doped p‐type Si substrate with a thermally grown SiO₂ layer. To verify that modulation of the Fermi level of the PoSiNWs is key for switchable light emitting, I–V and electroluminescent characteristics of the INLET are investigated as a function of gate bias (V _g). As the V _g is changed from 0 V to ?20 V, the current level and light‐emission intensity in the orange–red range increase by three and two times, respectively, with a forward bias of 20 V in the p–n junction, compared to those at a V _g of 0 V. On the other hand, as the V _g approaches 10 V, the current level decreases and the emission intensity is reduced and then finally switched off. This result arises from the modulation of the Fermi level of the PoSiNWs and the built‐in potential at the p–n junction by the applied gate electric field.     

Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes

We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.     

Nanocrystalline silicon as the light emitting material of a field emission display device

A nanocrystalline Si-based paste was successfully tested as the light emitting material in a field emission display test device that employed a film of carbon nanofibers as the electron source. Stable emission in the 550-850?nm range was obtained at 16?V?μm(-1). This relatively low field required for intense cathodoluminescence (CL) from the PSi paste may lead to longer term reliability of both the electron emitting and the light emitting materials, and to lower power consumption. Here we describe the synthesis, characterization, and analyses of the light emitting nanostructured Si paste and the electron emitting C nanofibers used for building the device, including x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The corresponding spectra and field emission curves are also shown and discussed.     

通体发光光纤及其应用

通体发光光纤不仅具有导光性 ,而且具有通体发光特性。本文介绍了通体发光光纤的种类、制备方法及优越性能 ,并简单概述了通体发光光纤在照明、装饰装璜、广告及其它领域中的应用。     

Inside Front Cover: Efficient Top‐Gate,Ambipolar, Light‐Emitting Field‐Effect Transistors Based on a Green‐Light‐Emitting Polyfluorene (Adv. Mater. 20/2006)

The inside cover shows light emission from within the channel of an ambipolar field‐effect transistor based on the green‐light‐emitting conjugated polymer F8BT in a bottom contact/top gate structure, as reported by Sirringhaus and co‐workers on p. 2708. It visually demonstrates the formation of separate electron and hole accumulation layers in ambipolar transistors and radiative recombination of charge carriers where the two layers meet (schematic), which is controlled by the applied voltages.     

Inkjet Printed Bilayer Light‐Emitting Electrochemical Cells for Display and Lighting Applications

A new bilayer light‐emitting electrochemical cell (LEC) device, which allows well‐defined patterned light emission through an easily adjustable, mask‐free, and additive fabrication process, is reported. The bilayer stack comprises an inkjet‐printed lattice of micrometer‐sized electrolyte droplets, in a “filled” or “patterned” lattice configuration. On top of this, a thin layer of light‐emitting compound is deposited from solution. The light emission is demonstrated to originate from regions proximate to the interfaces between the inkjetted electrolyte, the light‐emitting compound, and one electrode, where bipolar electron/hole injection and electrochemical doping are facilitated by ion motion. By employing KCF₃SO₃ in poly(ethylene glycol) as the electrolyte, Super Yellow as the light‐emitting compound, and two air‐stabile electrodes, it is possible to realize filled lattice devices that feature uniform yellow–green light emission to the naked eye, and patterned lattice devices that deliver well‐defined and high‐contrast static messages with a pixel density of 170 PPI.