共查询到20条相似文献,搜索用时 62 毫秒
1.
用扫描电镜观测了 Ga As/ Ga Al As 透射式光电阴极的表面形貌,计算了阴极表面形貌对阴极发射电子的平均横向能量的贡献,测量了阴极激活过程中阴极发射电子的平均横向能量随激活时间的变化。结果表明, Ga As/ Ga Al As 阴极表层的 Cs/ O 激活层对电子的散射是导致阴极发射电子的平均横向能量值增高的根本原因。最后提出减少阴极发射电子的平均横向能量的技术途径。 相似文献
2.
InGaAsP/InP异质结光电三极管的制备 总被引:2,自引:0,他引:2
介绍了n-InP/p-InGaAsP/0-InP结构的异质结光电三极管制作过程,并获得了对1.3μm的入射光,光增益达220,用带尾纤的GaAs/GaAlAs发光管测量,光学增益达1470。 相似文献
3.
InGaAs光电阴极像增强器研究 总被引:3,自引:2,他引:1
InGaAs 光电阴极像增强器的光谱为1-0 ~1-3μm 和1-0 ~1-1μm 。对用于像增强器中的InGaAs 光电阴极进行了研究。研究的方法有:光致发光法、微型瑞曼法、扫描俄歇俄法。将InGaAs 像增强器的光谱和标准的第二代和第三代像增强器进行比较。文中还报导了负电子亲和势InGaAs 光电阴极摄像管的性能参数:光谱灵敏度、白光光响应、等效背景照度、信噪比、调制传递函数以及像增强器的性能。对InGaAs 负电子亲和势光电阴极和标准第二代像增强器阴级直接进行比较。最后评价了近红外InGaAs 光电阴极像增强器的先进性。 相似文献
4.
分析了GaAs/GaAsAl阴极粘结工艺中应力产生的根源和晶体中应力对X射线双晶衍射峰的宽度和强度的影响,用X射线双晶衍射仪测量阴极和玻璃热粘结工艺过程中的阴极材料外延层和衬底的双晶回摆曲线,实验结果表明,GaAs/GaAsAl阴极粘结工艺没有带来明显的附加应力,外延层衍射角的展宽是由于GaAs阴极组件窗玻璃的非晶态性所致。 相似文献
5.
6.
硅基GaAs/GaAlAs平面光波导的研究 总被引:1,自引:0,他引:1
分析了金属有机化合物化学气相淀积(MOCVD)GaAs/GaAsAl/GaAs/Si材料结构的性能,用MOCVD法地硅衬底上生长了GaAs/GaAsAl/GaAs材料,并用这种材料制备了平面光波导样品,测定了1.3μm,单模激光的传输损耗小于0.65dB/cm。 相似文献
7.
制备了透射式GaAs阴极组件,测量了GaAs阴极激活过程中阴极光 敏度和发射电子平均横向能量随激活时间的变化,用扫描电镜观察GaAs(Cs,O)阴极表面形貌,结果表明:GaAs(Cs,O)阴极发射电子横向能量取决于GaAs晶格温度、阴极表面形貌和电子在能带弯曲区的多次散射,与(Cs,O)激活层无关。 相似文献
8.
报道了一种大功率无衬底N-GaAlAs/P-GaAs:Si单异质结红光二极管的制造工艺和主要光电特性。该器在50mA工作电流下,输出功率典型值7.5mW,最大功率11mW。 相似文献
9.
10.
报道了一种大功率无衬底N-GaAlAs/P-GaAs:Si单异质结红外发光二极管的制造工艺和主要光电特性。该器件在50mA工作电流下,输出功率典型值7.5mW,最大功率11mW。 相似文献
11.
Michael Reilly 《半导体技术》2004,29(12)
DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system. 相似文献
12.
Thomas M.Trexler 《半导体技术》2004,29(5)
From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test. 相似文献
13.
The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high. 相似文献
14.
The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation. 相似文献
15.
Today, micro-system technology and the development of new MEMS (Micro-Electro-Mechanical Systems) are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible. 相似文献
16.
Qi-jiang Ran Pei-de Han Yu-jun Quan Li-peng Gao Fan-ping Zeng Chun-hua Zhao 《光电子快报》2008,4(4):239-242
This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel's. 相似文献
17.
Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers
A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it. 相似文献
18.
It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output(MIMO) communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory. 相似文献
19.
A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working. 相似文献
20.
《中国通信》2014,(7)
正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks 相似文献