程控开关稳压电源的设计

引言开关电源是利用现代电力电子技术,控制开关管开通和关断的时间比率,维持稳定输出电压的一种电源。由于拥有较高的效率和较高的功率密度,开关电源在现代电子系统中的使用越来越普及。开关电源高频化、模块化和智能化是其发展方向。其中,步进可调、实时显示是开关电源智能化研究方向之一。本文设计了一种开关电源方案,其技术指标为:输出电压30V至36V可调,最大输出电流2A,有过流保护功能,能对输出电压进行键盘设定和步进调整、步进值1V,并能实时显示输出电压和电流的开关稳压电源。方案论证与比较主控CPU的选择方案一:采用AT89S51单片机进行控制。51单片机外接A/D和D/A比较简单,但是由于51单片机功能简单,对于这种复杂的系统来说做起来比较复杂。     

无变压器大功率稳流连续固体激光电源

该电源采用一种新型可控硅三相交流调压及其反馈控制的稳流方案;输出电流5～50A连续可调,电流稳定度可达0.5%,输出电压0～500V连续可调;该电源具有运转稳定和容易调整等特点.     

一种高精度的开关稳压电源设计

本文利用PWM芯片TL494,来控制开关电源管IRFP460的导通和截止,利用单片机为控制核心的开关稳压电源,可以输出可调电压在30V-36V之间,最大输出电流为2A;通过键盘能对输出电压进行键盘设定和一伏的步进调整,并通过液晶显示器件显示电流和电压值,同时开关稳压电源具有过流与过压保护功能.     

直流数控可调稳压电源的设计

采用AT89C51单片机作为数控模块核心,以通过按键调节可输出0-18V连续可调电压．电压调节分粗调与细调,粗调步进电压为1V,细调步进电压为0．05V,液晶屏显示输出电压。稳压输出电路舍过流检测电路．通过中断实现软件过流保护和报警。测试结果表明,该电源满足设计要求,可用于实验教学和工程应用中。     

直流数控可调稳压电源的设计

采用AT89C51单片机作为数控模块核心,以通过按键调节可输出0～18 V连续可调电压,电压调节分粗调与细调,粗调步进电压为1V,细调步进电压为0.05 V,液晶屏显示输出电压.稳压输出电路含过流检测电路,通过中断实现软件过流保护和报警.测试结果表明,该电源满足设计要求,可用于实验教学和工程应用中.     

数显直流稳压电源的研究与设计

本文所介绍的电源是由步进式电压输出构成的稳压电源。步进式电压输出以AT89S52单片机为核心控制器件,采用D／A转换器DAC0832将单片机输出的数字量转换成模拟量,然后通过I／U转换以电压形式输出。过流保护电路采用ADC0809将取样的模拟量转换成数字量送入单片机处理;以LCD1602作为主要器件实现输出电压显示之用。输出终端用2N3055进行电流放大。此电源不仅拥有完善的过流保护功能、直观的电压显示、良好的稳定性和较大的输出电流,而且能以0．1V步进递增或递减电压,足以满足众多实验场合的需求。     

带延迟复位功能的低压差稳压器IC

<正> 单片机在运行中对电源有严格要求。本文介绍的带延迟复位功能的低压差稳压器TPS73xx可满足各种单片机对电源的要求。 TPP73xx是微功耗低压差稳压器IC系列,具有延迟微处理器复位功能。该系列具有3.3V、4.85V和5V固定输出以及可调输出等几种稳压器IC。内部有精密基准电压及比较器电路,使电源的稳定度高。采用MOSFET作调整管,输出压降小。当输出电流I_0为100mA时,其最大压降为35mV。最大输出电流为500mA。输出电流在100mA至500mA区间,压降几乎不变。静态电流小,典型值为340μA,在关闭状态下,静态电流仅为0.5μA。工作温度范围为0～125℃。     

高精度线性直流稳压电源1502D

本文介绍高精度线性直流稳压电源1502D,它为 220V交流输入, 0~15.0V/2.00A直流稳压输出,配以粗调、细调两只电位器精细调整,并采用截止式保护电路,保护电流从0.6~2.0A连续可调,具有防止瞬间大电流保护功能。该电源还专为手机及无线电维修设计了五种固定电压输出挡位,即1.5、3.6     

单相正弦波逆变电源

本系统实现输入直流电压15V,输出交流电压有效值10V,额定功率10W,交流电压频率在20至100Hz可步进调整。以MSP430单片机为控制核心,产生SPWM波控制全桥电路,然后经过LC滤波电路得到失真度小于0.5%的正弦波。采用PID算法反馈控制使输出交流电压负载调整率低于1%,采用开关电源作为辅助电源、合理选用MOSFET等使系统效率达到90%,采用输入电流前馈法来估计输出电流以实现过流保护以及自恢复功能。     

低压差线性稳压器MCP1727

低压差线性稳压器单片集成电路MCP1727的输入电压范围为2．3～6V，可调输出电压范围为0．8～5V，标准固定输出电压有0．8、1．2、1．8、2．5、3、3．3V和5V几种，输出电流容量为1．5A，输入与输出电压之差典型值是0．33V．静态电源电流仅约120μA。MCP1727主要应用于高速驱动器芯片组电源、网络底板卡、笔记本电脑、网络接口卡和掌上计算机中。     

Low-voltage temperature sensor for micro-power harvesters in silicon-on-sapphire CMOS

A low-voltage temperature sensor designed for MEMS power harvesting systems is fabricated. The core of the sensor is a bandgap voltage reference circuit operating with a supply voltage in the range 1-1.5 V. The prototype was fabricated on a conventional 0.5 /spl mu/m silicon-on-sapphire (SOS) process. The sensor design consumes 15 /spl mu/A of current at 1 V. The internal reference voltage is 550 mV. The temperature sensor has a digital square wave output the frequency of which is proportional to temperature. A linear model of the dependency of output frequency with temperature has a conversion factor of 1.6 kHz//spl deg/C. The output is also independent of supply voltage in the range 1-1.5 V. Measured results and targeted applications for the proposed circuit are reported.     

一种无运放低压低功耗CMOS带隙基准电压源的设计

采用无运放电路结构,通过改进反馈环路和调整电阻的方法,设计了一种低电压低功耗的带隙基准电压源.相比传统有运放结构,电路芯片面积更小和具有更低的电流损耗,并且大部分电流损耗都用于产生输出电压.基于CSMC 0.5 μmCMOS工艺对所研制带隙基准电压源进行流片,测试结果表明,当电源电压大于0.85 V时,能够产生稳定的输...     

Low‐Voltage Current‐Sensing CMOS Interface Circuit for Piezo‐Resistive Pressure Sensor

A new low‐voltage CMOS interface circuit with digital output for piezo‐resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo‐resistance due to applied pressure and to allow low‐voltage circuit operation. A simple 1‐bit first‐order delta‐sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 µm CMOS technology and draws less than 200 µA from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non‐linearity error.     

一种反激式LED恒流驱动电路的设计与实现

设计了一种输出功率达120W的反激式变换LED恒流驱动电路,其输出电压范围为33～37V,可为120只功率为1W的LED管采用10串12并混联方式组成的LED阵列提供驱动电流。对其功率因数校正电路、反激式变换电路、恒流控制电路进行了设计和试制,性能测试表明,其输出恒流效果较好,电流稳定度约2.7%,输出电压纹波低,可用于恒流驱动混联方式组成的多只LED阵列。     

A switching power amplifier with feedback for improving total harmonic distortion

A high efficiency and low distortion and switching power amplifier is proposed. We use feedback to reduce the total harmonic distortion (THD) and the DC output bias current. The experimental results show that the proposed circuit has 0.24% total harmonic distortion and 91% power efficiency while the DC output bias current is 12 μA at 1.5 V supply voltage.     

一种二阶曲率补偿带隙基准电压源

利用CMOS工艺中Poly电阻和N-well电阻温度系数的不同,设计了一种输出可调的二阶曲率补偿带隙基准电压源.采用Chartered 0.35μm CMOS工艺模型,使用Cadence工具对电路进行了仿真,结果表明电路在电源电压为1.8V时可正常工作,当其在1.8～3V范围内变化时,基准电压变化仅有3.8mV;工作电压为2V时,输出基准电压在-40°C到80°C的温度范围内温度系数为1.6ppm/°C,工作电流为24μA,低频下的电源抑制比为-47dB.该带隙基准电压源的设计可以满足低温漂、高稳定性、低电源电压以及低功耗的要求.     

一种高温度性能的CMOS带隙基准源

提出了一种正负温度系数电流产生电路,使用分段线性温度补偿技术用于传统的电流模式基准电路中,改善CMOS带隙基准电路在宽温度范围内的温度漂移.采用0.18μm CMOS混合信号工艺,对该电路进行了设计.在1.8V的电源电压条件下,基准输出电压为0.801 V,温度系数在-40℃-125℃范围内可达到2.7ppm/℃,电源电压从1.5V变化到3.3V的情况下,带隙基准的输入电压调整率为1.2mV/V.     

一种面向单片DC/DC的低压高效片上电流检测技术

本文提出并实现了一种面向电流模式单片开关DC/DC转换器的低压高效片上电流采样电路.该电路利用功率管等效电阻电流检测技术和无需OP放大器的源极输入差分电压放大技术,使电路的应用范围可低达2.3V;-3dB带宽12MHz;在最大负载电流情况下的静态电流峰值仅19μA,比常规采用功率管镜像电流检测技术的静态电流峰值低1.5个量级左右.转换器基于0.5μm 2P3M Mixed Signal CMOS工艺设计制作.测试结果表明,电流检测电路的最大检测电流1.1A,转换器的输入最低电压2.3V,重负载转换效率高于93%.     

An experimental 1.5-V 64-Mb DRAM

Low-voltage circuit technologies for higher-density dynamic RAMs (DRAMs) and their application to an experimental 64-Mb DRAM with a 1.5-V internal operating voltage are presented. A complementary current sensing scheme is proposed to reduce data transmission delay. A speed improvement of 20 ns was achieved when utilizing a 1.5-V power supply. An accurate and speed-enhanced half-V_CC voltage generator with a current-mirror amplifier and tri-state buffer is proposed. With it, a response time reduction of about 1.5 decades was realized. A word-line driver with a charge-pump circuit was developed to achieve a high boost ratio. A ratio of about 1.8 was obtained from a power supply voltage as low as 1.0 V. A 1.28 μm² crown-shaped stacked-capacitor (CROWN) cell was also made to ensure a sufficient storage charge and to minimize data-line interference noise. An experimental 1.5 V 64 Mb DRAM was designed and fabricated with these technologies and 0.3 μm electron-beam lithography. A typical access time of 70 ns was obtained, and a further reduction of 50 ns is expected based on simulation results. Thus, a high-speed performance, comparable to that of 16-Mb DRAMs, can be achieved with a typical power dissipation of 44 mW, one tenth that of 16-Mb DRAMs. This indicates that a low-voltage battery operation is a promising target for future DRAMs     

A -80 dB THD, 4 Vpp switched capacitor filter for 1.5 Vbattery-operated systems

A fully differential fifth-order SC filter that can operate from power supplies as low as 1.5 V featuring a -80 dB THD up to 4 V_pp output voltage is presented. A measured p-weighted noise of 120 μV_rms leads to a dynamic range of 81.5 dB. This circuit is used as reconstruction filter for a low voltage 14-b DAC. The very low voltage operation has been possible by integrating a regulated voltage-multiplier on the same chip. The filter active area is 0.54 mm ² in a 0.8 μm CMOS technology. Typical power consumption is 0.8 mW at 1.5 V supply