Mo^6＋ Modified （K0.5Na0.5）NbO3 Lead Free Ceramics： Structural,Electrical and Optical Properties

Lead free polycrystalline ceramics （K0.5Na0.5）Nb（1-x）MoxO3 （x = 0, 0.02, 0.04, 0.06 and 0.08） have been synthesized via solid state reaction method. The formation of single phase perovskite structure up to 6 mol% of Mo^6＋ has been confirmed by X-ray diffraction pattern. Impedance spectroscopy reveals that bulk resistance decreases with increasing temperature, which indicates negative temperature coefficient of resistance （NTCR） behaviour of the compounds. The diffuse reflectance spectroscopy results indicate a red shift of the band gap energy of K0.5Na0.5NbO3 （KNN, from 4.28 to 3.61 eV） with increasing Mo^6＋ concentration due to structural modification. The photoluminescence spectra of doped samples are composed of two emission bands at room temperature. One emission band is near band edge ultraviolet （UV） emission （354 nm） and other is visible emission band （-397 nm） which may explore the possibility of these ceramics to be used in optical device applications.     

The Effect of the Flux B203 and the Role of Ion RE3＊ in CaAI204： Eu2＋, Nd3＋, RE3＋ Phosphor （RE： Dy, Gd, Tb）

The long afterglow phosphors CaA1204： Eu2＋, Nd3＋, RE3＋ （RE： Dy, Gd, Tb） were prepared by the combustion method at 580℃ for 5 min. In this method, the B203 oxide was used as flux. The influences of the flux B203 quantity and the role of ion RE3＋ （RE： Dy, Gd, Tb） in the phosphor CaAI204： Eu2＋, Nd3＋ were studied systemically. The X-ray diffraction pattern, scanning electron microscopy graphic, the photoluminescence spectra and decay time were presented. The emission spectra of phosphors had a broad band with maximum at 444 nm due to electron transition from the 4f65dI to the 4f7 of ion Eu2＋. It is showed that Nd3＋ and RE3＋ ions generated traps that resulted in the long persistent phosphorescence. Simultaneously, when the concentration of RE3＋ ion was high, they generated also emission centers in the phosphor.     

Temperature-Dependent Luminescence Characteristic of SrSi2O2N2：Eu2＋ Phosphor and Its Thermal Quenching Behavior

The yellow SrSi2O2N2：Eu2＋ phosphor has been synthesized by using a simple solid-state reaction method with Sr2SiO4：Eu2＋ as the precursor. It shows a broad excitation band extending from 250 to 520 nm and an asymmetric emission band with a main peak at about 550 nm. The emission intensity of the SrSi202N2：Eu2＋ is about 1.2 times higher than the commercial yellow phosphor YAG：Ce3＋ （P46-Y3）. The temperature- dependent luminescence characteristic of SrSi202N2：Eu2＋ has been investigated in this paper. With increasing temperature, the emission band of SrSi202N2：Eu2＋ shows anomalous blue-shift along with decreasing emission intensity and the broadening full width at half maximum （FWHM）. Particularly, compared with YAG：Ce3＋ （P46-Y3）, the yellow SrSi202N2：Eu2＋ phosphors exhibit higher thermal stability due to their weaker electron-phonon coupling strength （1.1）, lower stokes shift （0.0576 eV） and larger activation energy （0.288 eV）. All these results indicate that SrSi202N2：Eu2＋ yellow phosphors have potential application for white light-emitting diodes （LEDs）, What＇s more, an energy level scheme is constructed to explain the anomalous blue-shift phenomenon.     

Optical Spectra and Gain Properties of Ho3＋/Pr3＋ Co-doped LiYF4 Crystal

The LiYF4 single crystals singly doped Ho3＋ and co-doped Ho3＋, Pr3＋ ions were grown by a modified Bridgman method. The Judd-Ofelt strength parameters （Ω2, Ω4, Ω6） of No3＋ were calculated according to the absorption spectra and the Judd-Ofelt theory, by which the radiative transition probabilities （A）, fluorescence branching ratios （β） and radiative lifetime （τ rad） were obtained. The radiative lifetimes of 5/6 and 5/7 levels in Ho3＋ （1 mol%）：LiYF4 are 10.89 and 20.19 ms, respectively, while 9.77 and 18.50 ms in Ho3＋/pr3＋ doped crystals. Hence, the τ rad of 5/7 level decreases significantly by introduction of Pr3＋ into Ho3＋：LiYF4 crystal which is beneficial to the emission of 2.9 μm. The maximum emission cross section of Ho3＋：LiYF4 crystal located at 2.05 μm calculated by McCumber theory is 0.51 ×10-20 cm2 which is compared with other crystals. The maximum emission cross section at 2948 nm in Ho3＋/pr3＋ co-doped LiYF4 crystal obtained by Fuchtbauer- Ladenburg theory is 0.68 × 10-20 cm2, and is larger than the value of 0.53 × 10-20 cm2 in Ho3＋ singly doped LiYF4 crystal. Based on the absorption and emission cross section spectra, the gain cross section spectra were calculated. In the Ho3- ions singly doped LiYF4 crystal, the gain cross sections for 2.05 μm infrared emission becomes positive once the population inversion level reaches 30%. It means that the pump threshold for obtaining 2.05 μm laser is probably lower which is an advantage for Ho3＋-doped LiYF4 2.05 μm infrared lasers. The calculated gain cross section for 2.9 μm mid-infrared emission does not become positive until the population inversion level reaches 40% in Ho3＋/pr3＋：LiYF4 crystal, but 50% in Ho3＋ singly doped LiYF4 crystal, indicating that a low pumping threshold is achieved for the H03＋：5/6 → 5/7 laser operation with the introduction of Pr3＋ ions. It was also demonstrated that Pr3＋ ion can deplete rapidly the lower laser Ho3＋：5/7 level and has influence on t     

Co-Doped ZnO Nanoparticles:Structural,Morphological,Optical,Magnetic and Antibacterial Studies

Un-doped and Co-doped ZnO nanoparticles （NPs） with different weight ratios （0.5, 1.0, 1.5, and 2.0 wt% of Co） were synthesized by a facile and rapid microwave-assisted combustion method using urea as a fuel. The prepared NPs were characterized by X-ray diffraction （XRD）, high resolution scanning electron microscopy （HR-SEM）, energy dispersive X-ray analysis （EDX）, diffuse reflectance spectroscopy （DRS）, photoluminescence （PL） spectroscopy and vibrating sample magnetometry （VSM）. XRD patterns refined by the Rietveld method indicated that Co-doped ZnO had a single pure phase with wurtzite structure suggesting that Co^2＋ ions would occupy Zn^2＋ ionic sites within the ZnO crystal lattice. Interestingly, the morphology was found to convert substantially from grains to nanoparticles with close-packed periodic array of hexagonal-like shape and then into randomly distributed spherical NPs with the variation of Co-content. The optical band gap estimated using DRS was found to be red-shifted from 3.22 eV for the un-doped ZnO NPs then decrease up to 2.88 eV with increasing Co-content. PL spectra showed a strong green emission band thus confirming the formation of pure single ZnO phase. Magnetic studies showed that Co-doped ZnO NPs exhibited room temperature ferromagnetism （RTFM） and that the saturation magnetization attained a maximum value of 2.203 × 10^-3 emu/g for the highest Co-content. The antibacterial studies performed against a set of bacterial strains showed that the 2.0 wt% Co-doped ZnO NPs possessed a greater antibacterial effect.     

Emission Properties of Yb3+/Er3+ Doped TeO2-WO3-ZnO Glasses for Broadband Optical Amplifiers

The YbS /Er3 doped TeO2-WO3-ZnO glasses were prepared. The absorption spectra, emission spectra and fluorescence lifetime of Era at 1.5μm, excited by 970 nm were measured. The influence of Er2Oa, Yb2Oa and Ohcontents on emission properties of Era at 1.5 μm was investigated. The optimum doping concentrations for Era and Yba is around 3.34× 1020 ions/cma and 6.63×1020 ions/cma, respectively. The peak emission cross section is 0.83～0.87 pm2. With the increasing concentration of Yba , the FWHM of Era emission at 1.5 μm in the glass increases from 77 nm to 83 nm. The results show that Yba /Era doped meO2-Woa-ZnO glasses are promising candidate for Era -doped broadband optical amplifier.     

Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique

Hexagonally well-faceted microcrystals of ZnO have been grown by thermal evaporation of Zn powder in oxygen ambient at 700 C under atmospheric pressure. It has been observed that the properties (size and quality) of ZnO microcrystals have a strong dependence on the reactor temperature at which the oxygen gas is admitted into the growth zone. The microcrystals grown with oxygen admittance at 450 C have a length of 1 μm and a diameter of 0.75 μm while that grown with oxygen admittance at 600 C have a length of 1.5-2 μm and a diameter of 1 μm. Room temperature photoluminescence spectra show a ultraviolet (UV) emission peak at 385 nm with a green band emission at around 500 nm. The UV-to-green band emission ratio for the microcrystals grown with oxygen admittance at 450 C is observed to be 1.25 and the ratio decreases to 0.45 for the sample grown with oxygen admittance at 600 C.     

CaMoO4:Dy3+,K+ near White Light Emitting Phosphor:Structural,Optical and Dielectric Properties

Undoped,Dy³⁺ doped and Dy³⁺,K⁺ codoped calcium molybdate phosphors have been synthesized by solid-state reaction method.X-ray diffraction studies reveal the tetragonal structure of the prepared phosphors having crystallite size 15-50 nm.Scanning electron microscopy（SEM） studies reveal the morphology and crystallite size of the prepared phosphors.Photoluminescence studies indicate that there are blue and yellow emissions at 489 and 576 nm,respectively corresponding to Dy³⁺ ion.The introduction of K⁺ ion significantly influences the blue and yellow emissions which causes the near white light emission from this codoped phosphor.The intense absorption peak of the codoped phosphor at 210 nm is attributed to the band gap and a shoulder at 240 nm appears due to charge transfer from oxygen ions to neighbouring molybdenum ions. The band gap of the codoped phosphor is calculated as 5.5 eV from the absorption studies.The dielectric properties such as permittivity and dielectric loss are studied as a function of frequency.     

Structural, Morphological and Optical Properties of ZnO Thin Films Grown on γ-LiAlO2 Substrate by Pulsed Laser Deposition

ZnO thin films were deposited on the substrates of (100) γ-LiAlO2 at 400, 550 and 700℃ using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400℃, the grain size of the film is less than 1 μm observed by Leitz microscope and measured by X-ray diffraction (XRD). As the substrate temperature increases to 550℃, highly-preferred c-orientation and high-quality ZnO film can be attained.While the substrate temperature rises to 700℃, more defects appears on the surface of film and the ZnO films become polycrystalline again possibly because more Li of the substrate diffused into the ZnO film at high substrate temperature. The photoluminescence (PL) spectra of ZnO films at room temperature show the blue emission peaks centered at 430 nm. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. Meanwhile, the films grown on γ-LiAlO2 (LAO) exhibit green emission centered at 540 nm, which seemed to be ascribed to excess zinc and/or oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.     

Structural, Morphological and Optical Properties of ZnO Thin Films Grown on γ-LiA1O_2 Substrate by Pulsed Laser Deposition

ZnO thin films were deposited on the substrates of (100) γ-LiAIO2 at 400, 550 and 700℃using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400℃, the grain size of the film is less than 1μm observed by Leitz microscope and measured by X-ray diffraction (XRD). As the substrate temperature increases to 550℃, highly-preferred c-orientation and high-quality ZnO film can be attained. While the substrate temperature rises to 700℃, more defects appears on the surface of film and the ZnO films become polycrystalline again possibly because more Li of the substrate diffused into the ZnO film at high substrate temperature. The photoluminescence (PL) spectra of ZnO films at room temperature show the blue emission peaks centered at 430 nm. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. Meanwhile, the films grown on 7-LiAIO2 (LAO) exhibit green emission centered at 540 nm, which seemed to be ascribed to excess zinc and/or oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.     

荧光粉Sr3-x-yAl2O6∶xCe3+,yEu2+的制备及其发光特性

采用高温固相反应法制备了Sr3-x-yAl2O6:xCe3+,yEu2+(x=0,y=0;x=0.04,y=0;x=0.04,y=0.02;x=0.04,y=0.04;x=0.04,y=0.06;x=0.04,y=0.08;x=0,y=0.04)荧光粉,研究其相组成与荧光特性,结果表明,样品具有单相Sr3Al2O6晶体结构。在360nm波长的紫外光激发下,Ce3+离子辐射出峰值在434nm附近的宽谱蓝光。通过能量传递作用,Eu2+离子辐射峰值为517nm左右的宽谱绿光。Ce3+和Eu2+的荧光组合获得了色坐标为(0.2611,0.3313)的近白光发射。样品的激发光谱分布在250～400nm的波长范围,这种荧光粉有望在紫外或近紫外激发的白光LED中获得应用。     

Influence of Mg doping on the microstructure and PL emission of wurtzite ZnO synthesized by microwave processing

In this paper, we report the synthesis of nano-structured Zinc Oxide (ZnO) and Magnesium doped Zinc Oxide (ZnO:Mg) using air stable and inexpensive chemicals, by microwave assisted processing. The as-synthesized ZnO and ZnO:Mg nanopowders were annealed at 800 °C for 1 h. The samples were further characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy (SEM) and room temperature photoluminescence (PL) spectra. The crystallite size of ZnO decreased from 24 to 16 nm, and the intensity of most prominent vibration band of ZnO becomes weak when Mg dopant is added. SEM images of Mg doped ZnO showed clearly distinct hexagonal shaped nanoparticles with good crystalline quality and size contrast to ZnO. The PL result indicate that the ZnO exhibit strong and sharp UV emission peak at 380 nm. Our result showed that, by doping magnesium into ZnO, the UV emission peak shift towards the lower wavelength at ~370 nm with increasing intensity, which may be attributed to the size confinement. From this study, the microwave processing method has been proved to be successful for preparing other metal oxide nanopowders with good crystal quality.     

Thermal annealing induced structural and optical properties of Ca doped ZnO nanoparticles

In this letter, the effects of annealing on structural and optical properties of Ca doped ZnO nanoparticles have been investigated. X-ray diffraction analysis reveals that the prepared particles are in hexagonal wurtzite structure and formation of secondary phase related to the Calcite was found after thermal annealing. UV–Vis measurements show free exciton absorption band appeared at 372 nm and increase of band gap with annealing of samples. Room temperature photoluminescence (PL) spectrum of the prepared Ca doped ZnO nanoparticles shows bands which belong to the near band edge emission at 377 nm and green emission at 556 nm. Annealed samples exhibit enhancement in the blue emission band. Raman spectra show the increment in the electron–phonon coupling value with annealing.     

Growth of Zn(1_x)Mg(x)O and Zn(1_x)Cd(x)O nanowires and the application in light emitting devices

Magnesium and Cadmium doped ZnO nanowires were successfully grown by Chemical Vapor deposition method in a tube furnance. Photoluminescence spectra show that the band gap of ZnO nanowire has been tuned from 4.00 eV to 2.08 eV by Magnesium and Cadmium doping. Transmission Electron Microscopy and X-ray diffraction characterization analysis indicate that most of the formed nanowires are single crystalline with good quality. Zn(1-x)Cd(x)O nanowire sample was used for heterojunctional light emitting diode fabrication. Electroluminescence measurement yields a strong emission peak at 553 nm from the Zn(1-x)Cd(x)O nanowire.     

Photoluminescence of ZnO in metal ion exchanged zeolite Y

The photoluminescence of nano-sized ZnO in metal-ion-exchanged zeolite Y (ZnO/M-FAU, M = Na, Ca, Er) was investigated. ZnO/M-FAU was prepared by exposing Er(3+)- or Ca(2+)-exchanged Na-FAU to Zn vapor and to air at 723 K. The ZnO formation in the M-FAU showed a change in intensity in the (220), (311) and (331) lines, but no indication of ZnO peaks. In the EDXS and ICPAES analyses, it was found that the molar ratio of Zn/Si was linearly related to the exchanged amount of metal ions, and that the slope of the Zn/Si to the metal/Si was in the order of ZnO/Na-FAU < ZnO/CaNa-FAU < ZnO/ErNa-FAU. In the photoluminescence spectra of all the ZnO/M-FAU samples, peaks were observed at around 380 nm (3.2 eV) and 530 nm (2.5 eV) of ZnO. In ZnO/ErNa-FAU sample, the reabsorption of Er3+ at 520 nm and its emission at 650 nm were observed at the 530 nm peak of ZnO, which can be explained in terms of the interaction of ZnO with Er3+ in the FAU. In the case of ZnO/CaNa-FAU, the peak at around 380 nm was broaden to a longer wavelength, which is supposed to have been caused by emission peak of (CaO)x(ZnO)y. In addition, there were some indications of interaction between Na+ ZnO in ZnO/Na-FAU and the ZnO that was doped with Na+. From the result, it is suggested that ZnO particles were formed in the cavities that interacted with the ions in the zeolites.     

Defect induced room temperature ferromagnetism in well-aligned ZnO nanorods grown on Si (100) substrate

In this work, we report the fabrication of high quality single-crystalline ZnO nanorod arrays which were grown on the silicon (Si) substrate using a microwave assisted solution method. The as grown nanorods were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photo-luminescence (PL) and magnetization measurements. The XRD results indicated that the ZnO nanorods are well oriented with the c-axis perpendicular to the substrate and have single phase nature with the wurtzite structure. FE-SEM results showed that the length and diameter of the well aligned rods is about ~ 1 μm and ~ 100 nm respectively, having aspect ratio of 20-30. Room-temperature PL spectrum of the as-grown ZnO nanorods reveals a near-band-edge (NBE) emission peak and defect induced green light emission. The green light emission band at ~ 583 nm might be attributed to surface oxygen vacancies or defects. Magnetization measurements show that the ZnO nanorods exhibit room temperature ferromagnetism which may result due to the presence of defects in the ZnO nanorods.     

Strong room temperature ferromagnetism in chemically precipitated ZnO:Co2+:Bi3+ nanocrystals for DMS applications

Well crystalline Co-Bi co-doped ZnO nanostructures with various concentration of Bi were synthesized by simple chemical precipitation technique using metal nitrate precursors. The structural and magnetic properties of the samples calcined at 300 °C for 6 h has been studied comprehensively. X-ray diffraction patterns of the pure and Co-with Bi doped samples have shown the well crystalline diffraction peaks corresponds to the characteristic wurtzite ZnO crystal structure. Aggregated nano particles have emerged with flower like morphology and it can be seen from the scanning electron microscopy and transmission electron microscopy. The average particle diameter was estimated and found to be 25–35 nm. Tunable optical band gap related to an additional electron state created by dopant was observed from the UV–Visible spectra. Typical PL emission in the UV, visible and continuous deep level emission further demonstrates that the potential application of the material in optoelectronics. Excellent ferromagnetic features of the material at room temperature reveal the additional carrier induced exchange interaction could enhance the ferromagnetism in co-doped ZnO nanostructure. The addition of Bi at 3⁺ states can act as donor within the semiconductor which provides the additional electron charge carrier that could involve directly to the exchange interaction effectively at certain limit and enhances the ferromagnetism. At higher doping concentration the formation of diamagnetic Bi₂O₃ secondary phase have contributed to change the ferromagnetic behaviour of the sample. From this study it is suggested that this kind of combined ferromagnetism and excellent optical tunability of the Bi co-doped ZnO:Co system will be the potential material for future magneto-opto-electronic devices.     

过渡金属(Mn2+、Ni2+、Fe3+、Cu2+)掺杂ZnO基稀磁半导体的制备及性质

利用溶液腐蚀法制备了Mn2+、Ni2+、Fe3+、Cu2+离子掺杂的ZnO基稀磁半导体。XRD表明掺杂后的ZnO仍然保持单一的纤锌矿结构,没有任何杂质相产生。由紫外-可见光反射谱可知掺杂后吸收边发生了红移。掺杂前ZnO的带隙为3.20eV,对样品分别掺入Mn、Ni、Fe和Cu后的带隙分别为3.19eV、3.15eV、3.08eV和3.17eV。掺杂后样品的室温PL谱除了紫外发射峰外,对于Mn掺杂的样品还在蓝光区域出现了2个分别位于424nm和443nm的发射峰,Fe掺杂的样品出现了一个位于468nm的微弱发射峰,Cu掺杂的样品出现了位于469nm及535nm的很宽的发射峰。室温磁滞回线显示掺杂后样品有明显的铁磁性,掺入Mn、Ni、Fe和Cu样品的剩余磁化强度(Ms)分别为0.3902×10-3emu/cm3、0.454emu/cm3、0.372emu/cm3和0.962×10-3emu/cm3,矫顽力分别为47Oe、115.92Oe、99.33Oe和23Oe。经分析室温铁磁性来源于缺陷调制的Mn2+-Mn2+长程铁磁交换相互作用。     

A study of ZnGa2O4 phosphor prepared by the solid method

In this study, the mixtures of ZnO and Ga2O3 powder with addition of LiCl flux were fired, the raw material mixing ratio, doping with Mn2+ and firing atmosphere effects on phosphor characteristics were investigated. When fired at 1200 °C, its phosphor powder emits a broad-band spectrum range between 375 nm to 700 nm, with a peak at 470 nm. The optimal composition of phosphors is about ZnO/Ga2O5=47/53. Manganese-doped ZnGa2O4, fired in air, exhibits two new emission bands with peaks at 506 nm (Mn2+ emission centre) and 666 nm (Mn4+ emission centre). However, if fired under vacuum, the emission spectrum presents only the 506 nm peak with increased intensity. The 666 nm emission peak derived from a little Mn2 oxidized to Mn4+ which substituted Ga3+ to occupy the B sites of the spinel structure. The emission intensity of the 506 nm peak of Zn1-xMnxGa2O4 is strongest when [Mn2+] x=0.006 and decreases markedly as the concentration of Mn2+ exceeds x=0.01. Most of the substitutional Mn2+ doping species in spinel ZnGa2O4 occupy the zinc sites. The luminescent band was associated to the spin-forbidden transition, 4T1(4G)6A1 (6S). © 1998 Kluwer Academic Publishers     

Dopant induced bandgap narrowing in Y-doped zinc oxide nanostructures

In this report, hydrothermal synthesis and the absorption properties of the cubic shaped zinc oxide nanostructures doped with different amount of yttrium (Y) metal cation (0 to 15 at.%) are demonstrated. The structural and optical properties of chemically synthesized pure and Y doped ZnO powders are investigated by using powder X-ray diffraction (XRD), field emission scanning electron spectroscopy (FESEM) and transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) absorbance, photoluminescence (PL), and Fourier transform infra-red spectroscopy (FT-IR). It is found that the dopant ions stabilize in wurtzite hexagonal phase of ZnO upto the concentration of less than 6 at.%, which is mainly due to the fact that the ZnO lattice expands and the optical bandgap energy decreases at this level. Increasing the dopant concentration to greater than 6 at.% leads to a contraction of the lattice, which in turn produces a significant structural disorder evidenced by shift in the XRD peaks due to additional interstitial incorporation of Y. The vibrational modes of the metal oxide groups have been identified from the IR transmission spectra. The optical absorption results show that the optical bandgap energy of Y:ZnO nanocrystals is much less as compared to that of the pure bulk ZnO particles. Doping ZnO with trivalent Y produces excess number of electrons in the conduction band and thus, shifts the absorption edge and narrows down to 80 meV approximately. PL spectra are used to study the dependence of doping on the deep-level emission, which show an enhanced blue emission after Y doping. The existence of near band edge (NBE) emission and blue emission, related to zinc interstitials are observed in the luminescence spectra of Zn(1-x)Y(x)O nanostructures.