一种新颖的蝴蝶结形缺陷接地结构微带线

提出一种新颖的蝴蝶结形缺陷接地结构(DGS)微带线,分析了该微带线的带阻特性和慢波特性,同时考虑微带线损耗,建立了该微带线的等效电路模型及其参数提取,并分析了蝴蝶结形DGS结构变化对阻带特性的影响,最后将该DGS结构应用于紧凑结构低通滤波器的设计,模拟结果与实验结果吻合较好,验证了所提结构的可靠性。     

周期性缺陷接地结构的微带线

基于单元缺陷接地结构(DGS)等效电路模型,研究了周期性缺陷接地结构微带线的色散关系,并给出其阻带的快速估算方法.为提高微波电路的集成度和灵活性,提出了基于周期性DGS结构弯折型微带线,分析其带阻特性、色散特性和阻抗特性.实验证明,该结构在4～7GHz之间具有良好的宽阻带特性.     

基于FDTD的DGS微带线特性分析

借助时域有限差分法（FDTD）并结合完全匹配层（PML）对多种类型的缺陷地结构（DGS）微带线进行了电磁仿真,分析了其带阻特性和慢波特性,并以哑铃型DGS微带线为例,分析了DGS结构参数改变对微带线带阻特性的影响。仿真结果与相关文献及HFSS软件仿真结果吻合良好,从而验证了该分析方法的有效性和计算的准确性。     

一种多极点开环交指缺陷地结构

在一根50Ω微带线的地平面上蚀刻开环槽,且在槽内部添加了交指状的慢波结构,构成了一种新型的开环交指缺陷地结构(DGS)。和传统的哑铃形DGS相比较,这种DGS具有更小的体积和更高的Q值,第三阻带Q值可达53,而且该结构具有多个衰减极点。将三个开环交指DGS级联设计制作了多阻带的带阻滤波器,测试结果与仿真特性基本一致。     

新型高Q值U形缺陷地结构带阻滤波器

提出了一种新型的U形缺陷地结构(DGS)单元,该单元可以用来设计高Q值带阻滤波器。减小U形DGS结构两臂的槽宽及槽之间的距离,或在U形槽内加上贴片,可以增大Q值。最后用三个级联的U型DGS结构设计了一个高Q值的带阻滤波器,实验结果表明所设计的滤波器的Q值为35.3。     

微带DGS低通滤波器的设计

研究了实现DGS(defected ground structure)低通滤波器的方法。DGS滤波器具有很好的慢波、带阻特性,可以有效地改善滤波器特性。利用电路分析法讨论了DGS微带线的等效LC电路及其参数提取。研究了加窗技术在微带缺陷地结构中的应用,仿真表明加窗技术可以有效地改善带内平坦度。制作了相应的实际电路,仿真结果和实验测试结果基本吻合。     

一种按照指数函数相对振幅分布的新型周期DGS微带线设计

设计了一种新型一维周期接地缺陷结构(DGS)微带线。与传统的周期均匀DGS单元微带线不同的是,这种改进的周期DGS平面电路是一种补偿的微带线,每个DGS单元尺寸是不同的,尺寸按照指数函数e1/n(n为正整数)的相对振幅变化。本文设计了一个均匀周期DGS平面电路和两个改进的周期DGS平面电路,测量结果显示改进的周期DGS平面电路能够更好地抑制波纹和增大带阻带宽。     

基于缺陷地面结构和补偿微带线的低通滤波器

提出了一种新型一维周期缺陷地面结构（DGS）单元。文中给出了3个不同尺寸单元的5参数变化曲线,并使用DGS单元进行级联,形成一种补偿微带线。设计了一个低通滤波器,计算和测试结果显示该结构单元的截止频率由结构单元的物理尺寸决定,单元级联形成的多级低通滤波器具有良好的带通、带阻和谐波抑制特性。     

一种新型SRR缺陷地面结构低通滤波器

该文提出一种新型开口谐振环(Split-Ring Resonator, SRR)缺陷地面结构(Defected Ground Structure, DGS)。这种结构与传统哑铃形DGS结构相比,具有陡峭的带隙和平坦的低通特性。文中详细分析了开口谐振环DGS单元的等效电路以及结构参数与电参数之间的关系。在此基础上提出一种加载开路枝节的SRR DGS单元模型以提高带外抑制,采用这种单元的级联周期结构设计并制作了一种紧凑的S波段低通滤波器。测试结果表明,该滤波器带内插损小于0.5dB,带外抑制度在30 dB以上。     

采用渐变尺寸的DGS结构的设计

在原有周期DGS(Defected Ground Structure)结构基础上,提出了一种周期渐变尺寸的DGS结构,比原有结构具有更好的阻带特性。并将其应用于毫米波微带通滤波器的设计,改善了阻带性能。对DGS结构的等效电路作了分析,与原有DGS结构仿真的比较,结果证明了优化的渐变尺寸DGS结构能有效地改善带阻特性,同时对通带内插入损耗的影响较小。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.