紫外光激发Ce3+掺YVO4蓝光发射性能研究

利用提拉法生长了YVO₄和掺2.0at% CeO₂(或Ce₂(CO₃)₃)的YVO₄: Ce³⁺晶体。样品的XRD测试表明Ce³⁺代替Y³⁺进入晶格, Ce³⁺的加入并没有影响YVO₄的晶格结构。XPS测试显示YVO₄: Ce³⁺晶体中Ce离子3d分裂为882.0、885.8、902.9、908.0和915.9 eV等5个峰, 峰位表明样品中铈离子是以Ce³⁺和Ce⁴⁺两种价态形式存在。YVO₄和YVO₄: Ce³⁺激发谱都呈现出260~360 nm宽带激发, 此激发带源于基质中VO₄^3-离子团的配体O到V的电荷迁移吸收。使用325 nm的紫外线激发时, 两种样品均可发出以440 nm 为中心的宽带蓝光,其中YVO₄发射峰应归属于VO₄^3-离子团中³T₂→¹A₁和³T₁→¹A₁跃迁; 而YVO₄: Ce³⁺的蓝光发射则来源于Ce³⁺的5d→4f 的跃迁。分析可知YVO₄: Ce³⁺中VO₄^3-的π轨道和Ce³⁺的电子波函数能有效地重叠, 使得VO₄^3-和Ce³⁺可通过交换作用有效地向Ce³⁺传递能量, 可大幅提高Ce³⁺的蓝光发射强度。实验结果显示YVO₄: Ce³⁺可作为UV-LED管芯激发的白光发光二极管用高亮度蓝色发光材料。     

Yb3+-Tm3+共掺BiOBr纳米晶的近红外上转换发光特性研究

采用水热法合成了Yb³⁺-Tm³⁺共掺BiOBr纳米晶, 研究了其上转换发光性能。在980 nm光激发下, 样品中Tm³⁺离子实现了³H₄→³H₆、¹G₄→³F₄和¹G₄→³H₆跃迁, 进而发出强烈的近红外光(801 nm)和较弱的红光(655 nm)与蓝光(485 nm)。探讨了样品的上转换发光机理, 上转换发光强度与激发功率的关系表明在980 nm激发下Tm³⁺的蓝光和红光发射为三光子过程, 而近红外发光为双光子过程。随着Yb³⁺浓度增加, 近红外发光显著增强, 近红外光与蓝光(I_{801 nm}/I_{485 nm})的发光强度比高达71.4。研究结果表明, Yb³⁺-Tm³⁺共掺BiOBr纳米晶在生物荧光标记领域具有潜在的应用前景。     

Yb3+,Tb3+共掺杂Sr2B2O5荧光粉的制备及其下转换发光性能的研究

采用高温固相法合成了Tb³⁺, Yb³⁺共掺杂的Sr₂B₂O₅荧光粉。通过X射线衍射(XRD)和荧光光谱(PL)对样品的物相结构和发光性质进行了表征。XRD结果表明, 合成样品为单斜结构的Sr₂B₂O₅相。分别使用543 nm和980 nm的监测波长, 得到的激发光谱均在354 nm、374 nm处有较强的激发峰, 其中374 nm处最强, 说明Sr₂B₂O₅荧光材料在近紫外光区对太阳光有很强的吸收; 在374 nm( Tb³⁺:⁷F₆→⁵D₃) 紫外光激发下, 观察到Tb³⁺: ⁵D₄→⁷F_J ( J = 6, 5, 4, 3) 可见光区发射光, 并检测到Yb³⁺: ²F_5/2→²F_7/2的近红外发射光。通过研究激发光谱和发射光谱与Yb³⁺掺杂浓度的关系, 发现在单斜晶体Sr₂B₂O₅中, Yb³⁺具有很高的猝灭浓度。     

Eu3+掺杂Y2O3单分散红色荧光球形颗粒的尺寸可控合成与荧光性能

结合籽晶法和添加矿化剂硝酸铵, 通过均相沉淀合成和后续煅烧实现了(Y, Eu)₂O₃单分散球形颗粒(直径范围110~550 nm)的可控合成。通过XRD、FE-SEM、TEM和PLE/PL分析等手段对产物进行了系统表征。发现采用籽晶法和添加矿化剂硝酸铵可以促进球形颗粒长大。碱式碳酸盐前驱体经600℃煅烧分解为立方晶(Y, Eu)₂O₃, 且经1000℃煅烧后(Y, Eu)₂O₃依然继承球形形貌特征。所得多晶(Y, Eu)₂O₃球形荧光颗粒在242 nm激发下于615 nm处呈现最强红色荧光发射(Eu³⁺的⁵D₀→⁷F₂跃迁)。荧光粉的荧光性能呈现明显的尺寸依存性。增大球形颗粒尺寸减小了荧光寿命(1.15~1.57 ms)和荧光不对称因子[I(⁵D₀→⁷F₂)/I(⁵D₀→⁷F₁)], 但增强了荧光发射强度。     

Eu2+/Tb3+掺杂的Sr2Si5N8基荧光粉的制备与发光性能

采用碳热还原氮化法合成了Eu²⁺/Tb³⁺掺杂的Sr₂Si₅N₈基荧光粉, 并重点研究了Tb³⁺-Eu²⁺共掺时Sr₂Si₅N₈基荧光粉的发光性能。研究结果表明: 由于Tb³⁺的f → d间的跃迁是自旋允许的, Sr₂Si₅N₈:Tb³⁺在330 nm激发光下, 在490、543、585和623 nm四处各有一发射峰, 它们分别来源于Tb³⁺的⁵D₄ → ⁷F_j (j = 6、5、4、3)能级跃迁; 掺入Tb³⁺对Sr_1.96Si₅N₈:0.04Eu²⁺的激发谱和发射谱的形状及峰位无明显影响, 当共掺离子Tb³⁺浓度为x = 0.01时, 样品发射强度比未共掺的Sr_1.96Si₅N₈:0.04Eu²⁺提高了约20%, Tb³⁺主要通过电多极能量传递的方式转向Eu²⁺。     

Ni2+掺杂尖晶石相透明微晶玻璃制备及光学性能

实验制备了Ni²⁺掺杂的ZnO-MgO-Al₂O₃-SiO₂(ZMAS)体系的透明微晶玻璃, 研究了微晶玻璃的超宽带发光现象。热分析结果表明样品的玻璃化转变温度(T_g)和析晶峰温度(T_c)分别为754℃和948℃。采用X射线粉末衍射分析了两种热处理制度对玻璃的晶体形核、晶体生长及物相变化的影响, 结果表明: 采用阶梯温度热处理制度可以得到Ni²⁺掺杂的尖晶石相透明微晶玻璃。紫外-可见吸收光谱和荧光光谱测试表明制备的Ni²⁺掺杂ZMAS微晶玻璃中Ni²⁺以四配位和六配位共同存在于尖晶石相中, 红外荧光中心位于1324 nm的样品荧光半高宽达490 nm。样品的超宽带荧光主要是由于微晶玻璃中六配位Ni²⁺在ZnAl₂O₄和MgAl₂O₄形成的尖晶石相固溶体晶体场中的³T_2g(³F)→³A_2g(³F) 能级跃迁。实验结果表明, 制备的微晶玻璃在超宽带光纤放大器等光子器件中具有潜在的应用前景。     

Mn4+激活氧氟化物红光荧光粉的研究进展

稳定可靠的高光子能量发光(620~650 nm)红光荧光粉, 对于构建低色温、高显指荧光粉转换型白光发光二极管(WLED)至关重要。Mn ⁴⁺激活红光荧光粉是当前WLED用荧光粉研究热点之一。本文介绍了Mn ⁴⁺离子的能级跃迁与光致发光特性, 详细叙述了目前所报道的七种Mn ⁴⁺激活含d ⁰/d ¹⁰/s ⁰离子氧氟化物系列红色荧光粉(如Na₂WO₂F₄:Mn ⁴⁺等)的制备方法、晶体结构及其发光特性。目前Mn ⁴⁺在氧氟化物结构中得到强R线发光的情况少, 微观配位体仍是[MnF₆]或[MnO₆], 其化学稳定性和量子效率研究也很缺乏。最后对Mn ⁴⁺激活氧氟化物红光荧光粉的研究进行了展望。     

Si3N4掺杂氮化对Sr3SiO5:Eu2+荧光粉发光性能的影响

采用高温固相法制备Si₃N₄掺杂氮化Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺荧光粉。采用XRD、EDS和SEM测试结果表明: N^3-进入Sr₃SiO₅基质晶格中取代部分O^2-离子, 形成了单一相Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺固溶体。PL&PLE荧光光谱测试结果显示, Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺荧光粉在344nm紫外光的激发下发射出红橙光, 属于Eu²⁺离子典型的 4f⁶5d¹→4f⁷电子跃迁。随着N浓度的增加, Sr_2.99SiO_5-6xN_4x:0.01Eu²⁺荧光粉发射光谱和激发光谱的强度明显增强。热稳定性测试结果表明, Si₃N₄掺杂氮化能够显著提高Sr₃SiO₅:Eu²⁺荧光粉的热稳定性。通过Arrhennius模型拟合结果表明横向穿越过程(crossover)引起的Sr₃SiO₅:Eu²⁺荧光粉氮化前后的温度猝灭。     

脉冲激光沉积ZnSe:Cox纳米晶薄膜的微结构及光学性质研究

采用脉冲激光沉积技术在基片温度为800℃条件下制备了不同Co含量的ZnSe:Co_x(x=0.1,0.3,0.5)微晶薄膜。通过X射线衍射、原子力显微镜、X射线光电子能谱、红外透射光谱及光致发光光谱分析了薄膜的微结构及光学特性。结果表明：所制备的纳米晶薄膜结晶质量优秀,具有(111)择优取向,薄膜结晶质量、光谱透射率和光学带隙均随Co含量的增加而减小;薄膜在波长约700～850 nm处存在一吸收带,这源于Co²⁺在周围Se^2-构成的四面体晶场中⁴A₂(4F)→⁴T₁(4P)能级之间的跃迁;当Co掺入量x=0.5时,薄膜达到过掺杂状态,α-Co杂质相出现,薄膜红外光致发光谱大幅降低。     

镨掺杂钛酸钙/云母钛荧光效果珠光颜料的制备及其性能研究

采用液相沉积法在云母基材表面双层包覆二氧化钛和镨掺杂氢氧化钙, 经高温煅烧在两层之间生成镨掺杂钛酸钙(CaTiO₃:Pr³⁺)荧光层。通过荧光分光光度计、全自动色差计、X射线粉末衍射仪和冷场扫描电子显微镜测试样品的性能。结果表明, 当氧化钙理论包覆率为5.3%、镨浓度相对硝酸钙为0.2mol%、煅烧温度为900℃时, 样品表面均匀、致密, 具有较好的珠光性能和荧光强度, 样品的激发光谱由264、304和380 nm三个激发峰组成, 最大发射波长主峰位于613 nm, 呈红光发射, 对应于Pr³⁺的¹D₂→³H₄跃迁。     

Enhancement of red emission assigned to inversion defects in ZnAl2O4:Cr3+ hollow spheres

ZnAl₂O₄:Cr³⁺ hollow spheres composed of secondary nanoparticles with single spinel phase were fabricated using carbon templets. Monitoring the emission of 687 nm, two wide excitation bands attributed to the electrons of Cr³⁺ transiting from ⁴A_2g (⁴F) → ⁴T_1g (⁴F) and ⁴A_2g (⁴F) → ⁴T_2g (⁴F) were observed. The broad excitation band at about 397 nm was asymmetric and consisted of two peaks, indicating that there was a trigonal distortion existing in the lattices. The intensity of all emitting peaks revealed sharp increasing trend with the sintering temperature increase, and the intensity of emission at 698 nm assigned to inversion defects was more intense than that of emission at 687 nm assigned to octahedral Cr³⁺ ions in the undistorted spinel lattice. The samples with higher synthesized temperature revealed longer decay time, and the relative weightage of shorter decay time component decreased with the increase of sintering temperature, indicating that the surface defects decreased.     

The luminescent quantum efficiency of Cr ions in Cs2NaAlF6 single crystals

The luminescent quantum efficiency of Cr³⁺ ions in single fluoride crystal Cs₂NaAlF₆ was determined by using the simultaneous multiple-wavelength photoacoustic and luminescent experiments method, based on the generation of photoacoustic and luminescence signals after pulsed laser excitation. The luminescent quantum yield for the most important transition between the ⁴T₂→⁴A₂ vibronic levels was found to be 68±3%. This value agrees with that obtained from the ratio of the lifetimes of the corresponding transition at different temperatures.     

Energy transfer and radiationless relaxation processes in Nd and Cr doped mixed garnet crystals

Four-wave mixing and flourescence dynamics measurements have been used to investigate the energy transfer processes in (Gd,Ca)₃(Ga,Mg,Zr)₂Ga₃O₁₂ crystals doped with Nd³⁺ or codoped with Cr³⁺ and Nd³⁺ ions. The results show that strong, short range energy transfer takes place between Cr³⁺ and Nd³⁺ ions and this is enhanced by long range energy migration among the Cr³⁺ ions. Energy migration was also found to occur among the Nd³⁺ ions. The energy migration properties are affected by the active ion concentration, the distribution of active ions, ion-ion iteraction rates, and temperature. In addition, the pump band to metastable state radiationless relaxation process in the Cr³⁺ ions was characterized by determining the values of the dephasing time from the properties of the four-wave mixing signal. The effects of anharmonic coupling are needed to explain the variation of the T₂-dephasing time as a function of the crystal field splitting between the ²E and ⁴T₂ levels for a series of Cr³⁺-doped materials.     

A photoluminescence study of vanadium-related defects in n-type, semi-insulating and p-type Cd(Zn)Te

A photoluminescence (PL) study of vanadium-related defects in semi-insulating and co-doped p-type and n-type CdTe:V crystals gives evidence of the presence of the V²⁺–Zn complex. In addition to the ³T₂(F)→³A₂(F) emission of V³⁺ near 0.5 eV and the ⁴T₂(F)→⁴T₁(F) transition of V²⁺ near 0.45 eV, two further luminescence bands are detected at higher energies. The first emission band (I), peaking around 0.8 eV, is correlated to the V²⁺–Zn complex and the second one (II), peaking around 0.6 eV, is attributed to the acceptor level introduced by the cadmium vacancies. Varying the zinc concentration in CdTe, we analyse the behaviour of the vanadium impurity charge state. We show that the V²⁺ internal transition decreases with zinc alloying due to the formation of the V²⁺–Zn complex. The emission bands related to isolated V_Cd are present with high intensity only in the p-type crystals, in which all the vanadium content is in the V³⁺ oxidation state, whereas, in the semi-insulating and n-type crystals, the PL spectrum is dominated by Emission I related to the V²⁺–Zn complex. The presence of this complex in the semi-insulating crystals used in photorefractive (PR) applications and the dominance of this complex over the optical properties of Cd(Zn)Te:V imply the contribution of this complex to the PR processes.     

Cr~（3＋）离子掺杂对Al_2O_3粉末结构及发光性能影响

采用球磨法制备了不同浓度Cr_2O_3掺杂的Al_2O_3粉体,并在700℃、1200℃空气中退火2 h。1200℃退火后样品,除掺杂浓度为1.6%的样品中出现少量γ-Al_2O_3相外,其余样品相均为纯α-Al_2O_3。样品晶格常数随着Cr~（3＋）离子浓度的增加而增加。采用波长为579 nm的激发光源对佯品进行荧...     

Sol–gel deposition and characterization of Mn-doped silicate phosphor films

Mn²⁺-doped Zn₂SiO₄ and Mg₂Gd₈(SiO₄)₆O₂ phosphor films were deposited on silicon and quartz glass substrates by sol–gel process (dip-coating). The variations of sol viscosity with time and film thickness with the number of layers were investigated in Zn₂SiO₄: Mn system. The results of XRD and IR showed that the Zn₂SiO₄: Mn films remained amorphous below 700°C and crystallized completely around 1000°C. From AFM studies, it was observed that the grains with 0.5–0.8 μm size packed closely in Zn₂SiO₄: Mn films, which were uniform and crack free. The luminescence properties of Zn₂SiO₄: Mn films were characterized by absorption, excitation and emission spectra as well as luminescence decay. These properties were discussed in detail by a comparison with those of Mn²⁺ (and Pb²⁺)-doped Mg₂Gd₈(SiO₄)₆O₂ phosphor films.     

Precision interferometric frequency measurement of the 674 nm2S1/2-2D5/2 transition in asingle cold Sr+ ion

The narrow linewidth 674 nm ²S_1/2-² D_5/2 transition in a cold Sr⁺ ion confined within an RF Paul trap has been probed using an optically narrowed 674 nm diode laser offset-locked to a second diode laser stabilized to a high-finesse ultra-low-expansion reference cavity. The transition frequency has been measured by means of interferometric comparison with an iodine-stabilized 633 nm He-Ne reference standard. A preliminary value for the ²S_1/2-²D_5/2 transition line center is 444 779 045 (9) MHz, limited by residual micromotion and low magnetic field Zeeman splitting