共查询到16条相似文献,搜索用时 177 毫秒
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采用物理气相传输法(PVT法)在4英寸(1英寸=25.4 mm)偏<11¯20>方向4°的4H-SiC籽晶的C面生长4H-SiC晶体。用熔融氢氧化钾腐蚀4H-SiC晶体, 并利用光学显微镜研究了晶体中的堆垛层错缺陷的形貌特征和生长过程中氮掺杂对4H-SiC晶体中堆垛层错缺陷的影响。结果显示, 4H-SiC晶片表面的基平面位错缺陷的连线对应于晶体中的堆垛层错, 并且该连线的方向平行于<1¯100>方向。相对于非故意氮掺杂生长的4H-SiC晶体, 氮掺杂生长的4H-SiC晶体中堆垛层错显著偏多。然而, 在氮掺杂生长的4H-SiC晶体的小面区域, 虽然氮浓度高于其他非小面区域, 但是该小面区域并没有堆垛层错缺陷存在, 推测这主要是由于4H-SiC晶体小面区域特有的晶体生长习性导致的。 相似文献
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设计并制备了4%W/无Ru、6%W/无Ru以及6%W/2%Ru三种镍基单晶高温合金,通过蠕变性能测试、组织形貌观察、元素分布测定以及XRD谱线测定,研究Ru对一种高W镍基单晶合金蠕变性能的影响。结果表明,提高W含量会促进拓扑密堆相(TCP)析出,从而影响蠕变寿命,6%W/无Ru合金在1070℃/137 MPa条件下的蠕变寿命仅为58 h。元素Ru可改善元素W在γ/γ两相的浓度分布,高温蠕变期间元素Ru可抑制元素W由γ相向γ相扩散。6%W/2%Ru合金经高温蠕变无TCP相析出,其在1070℃/137 MPa条件下的蠕变寿命高达383 h。三种合金在高温蠕变期间,γ相均可形成垂直于应力轴方向的筏状结构,TCP相可破坏筏状结构的连续性,导致γ/γ两相扭折程度加剧,是6%W/无Ru合金蠕变寿命较低的主要原因。 相似文献
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利用激光拉曼光谱仪测量了SiC单晶中不同多型的显微Raman光谱.在Raman光谱中,最大强度的FTA模和FTO模应出现在其简约波矢x等于该多型的六角度h处,据此对4H-SiC单晶中的多型进行了鉴定.同时采用高分辨X射线衍射测量了该晶片不同区域的摇摆曲线,将不同多型体的计算衍射角与实验值加以比较,对SiC晶片中的多型进行了标注,所得结论与激光Raman光谱测定结果相一致,说明Raman光谱是一种简单、快速地鉴定多型结构的强有力的工具.实验结果表明,在升华法生长4H-SiC单晶过程中,容易出现寄生6H、15R多型同4H多型的竞争生长,简单分析了寄生多型产生的原因. 相似文献
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采用物理气相传输法(PVT)制备了2英寸Ge掺杂和非掺SiC晶体, 并使用二次离子质谱仪(SIMS)、显微拉曼光谱(Raman spectra)仪、体式显微镜、激光共聚焦显微镜(LEXT)和高分辨X射线衍射(HRXRD)仪等测试手段对其进行了表征。结果表明, Ge元素可以有效地掺入SiC晶体材料中, 且掺杂浓度达到2.52×1018/cm3, 伴随生长过程中Ge组份的消耗和泄漏, 掺杂浓度逐渐降低; 生长初期高浓度Ge掺杂会促使6H-SiC向15R-SiC晶型转化, 并随着生长过程中Ge浓度的降低快速地转回6H-SiC稳定生长。用LEXT显微镜观察发现, 生长初期过高的Ge掺杂导致空洞明显增多, 位错密度增加, 掺杂晶体中位错密度较非掺晶体增大一倍。HRXRD分析表明掺Ge能增大SiC晶格常数, 这将有利于提高与外延III族氮化物材料适配度, 并改善器件的性能。 相似文献
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《Materials Science and Engineering: B》1999,57(2):147-149
Hexagonal silicon carbide (6H-SiC) single crystals made by a modified Lely method contain a ‘micropipe’ which is one kind of serious defects degrading device performance. The micropipe accompanies strong internal stress around itself. We determined the photoelastic constant in the plane of (00·1) 6H-SiC and then estimated the magnitude of the internal stress around the micropipes. The photoelastic constant was 2.73 brewster at λ=546 nm. The internal stress around the micropipe was estimated to be 113∼166 MPa. 相似文献
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Jun Lin Liu Ji Qiang Gao Ji Kuan Cheng Jian Feng Yang Guan Jun Qiao 《Journal of Materials Science》2007,42(15):6148-6152
Micropipes are very harmful for SiC devices. Even one micropipe in the active area can destroy a high-voltage SiC device.
Therefore, it is necessary to reduce the density of micropipes in SiC single crystals. In the present paper, we proposed methods
for reducing micropipes. Restriction of screw dislocations and decrease of inclusions are the key factors to reduce the number
of micropipes. (0 0 0 1) Si-face,
and crystal faces acted as growth surface in different experiments. Active carbon was appended to act as carbon source. The crucible
and active carbon were subjected to X-ray diffraction investigation before and after growth. The experimental results indicate
that the activity of the graphite crucible was low, and it decreased with the progressing crystal growth, which increased
the probability of micropipe formation. Appending active carbon can act as ample carbon source for crystal growth. The reduction
of micropipes was achieved by the restrained formation of Si liquid phase. Using and crystal faces as the growth surfaces the generation of micropipes was restricted, as no new micropipe generated on the and crystal faces. At the same time, the density of edge dislocations is reduced considerably. 相似文献
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ZnSe单晶CVT法生长与系统优化 总被引:1,自引:0,他引:1
采用热力学数值计算的方法, 分析了ZnSe-I2、H2、HCl和NH4Cl化学气相输运系统的特性. 对比计算结果表明, ZnSe-NH4Cl系统具有压力高、输运反应焓变适中的特点. NH3分解产生的H2起着调节输运组分H2Se分压的作用. 以ZnSe-I2输运系统中实际输运组分分压值为参考, 确定了ZnSe-NH4Cl系统中单晶生长工艺参数范围: 温度在1000℃左右, NH4Cl的浓度范围在0.5~1.0mg/mL之内. 采用该工艺生长了尺寸约为8mm×6mm×4mm的ZnSe单晶, 生长态(111)面摇摆曲线半峰宽为60.48’’, 蚀坑密度(EPD)为(4.5~5.0)×104/cm2. 相似文献
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St. G. Mü ller R. C. Glass H. M. Hobgood V. F. Tsvetkov M. Brady D. Henshall D. Malta R. Singh J. Palmour C. H. Carter Jr 《Materials Science and Engineering: B》2001,80(1-3):327-331
The production of large diameter, high quality SiC substrates is essential to realize the full potential of this important semiconductor material. The current status of SiC bulk sublimation growth for the production of these substrates is reviewed from an industrial point of view. Specific efforts towards larger diameter high quality substrates have led to the production of 50 and 75 mm diameter 4H and 6H wafers and the demonstration of high quality 100-mm wafers. We present thermal conductivity data for material of different doping levels, relevant for device applications. In SiC, micropipes are the most harmful defects for SiC device production. By continuous optimization of the growth process we were able to steadily decrease the micropipe density over the past several years, down to densities as low as 1.1 cm−2 for an entire 50-mm wafer, indicating that micropipes may be totally eliminated in the next few years. In order to achieve this goal for SiC substrates of increasing diameter, a thorough understanding of the growth process is essential. We will summarize results of modeling the growth process and its experimental verification. The effect of micropipe densities and their characteristic lateral distribution in SiC wafers on achievable device yields will be discussed, using large area Schottky diodes as an example. 相似文献
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采用物理气相传输法(Physical Vapor Transport, PVT)沿[0001]方向生长了一个直径为2英寸的氮掺杂6H-SiC晶体. 采用拉曼面扫描方法对晶体中多型的分布进行了细致表征, 研究了SiC晶体生长过程中多型的产生和演化. 在6H-SiC晶体中观察到了15R-SiC和4H-SiC两种多型. 在拉曼面扫描得到的晶体多型分布图上观察到了两类次多型结构区域, 一类是继承其生长界面上对应的次多型结构形成的次多型结构区; 另一类是由温度、压力等生长条件波动导致在6H-SiC主多型中出现的15R-SiC多型结构区. 第一类次多型结构区中掺入的氮元素较多, 载流子浓度较高, 并且随着晶体生长不断扩大; 第二类次多型结构区对晶体结晶质量的影响较小, 且提高生长温度可以抑制15R-SiC多型结构. 相似文献
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β-Ga2O3晶体是一种新型宽禁带氧化物半导体材料, 本征导电性差。为了在调控导电性能的同时兼顾高的透过率和结晶性能, 离子掺杂是一种有效的途径。采用光学浮区法生长出ϕ8 mm×50 mm蓝色透明In:Ga2O3晶体, 晶体具有较高的结晶完整性。In3+离子掺杂后, β-Ga2O3晶体在红外波段出现明显的自由载流子吸收, 热导率稍有减小。室温下, In:Ga2O3晶体的电导率和载流子浓度分别为4.94×10-4 S/cm和1.005×1016 cm-3, 其值高于β-Ga2O3晶体约1个数量级。In:Ga2O3晶体电学性能对热处理敏感, 1200℃空气气氛和氩气气氛退火后电导率降低。结果表明, In3+离子掺杂能够调控β-Ga2O3晶体的导电性能。 相似文献