含氧量对NiOx薄膜光电特性的影响

采用直流溅射方法制备了厚度小于０．１μｍ的ＮｉＯｘ薄膜，研究薄膜的加热氧化及其光电特性，测量了它们的透射光谱和电阻率随薄膜中的氧一及热处理温度的变化。     

介质薄膜的透射光谱测量及其光学参数的分析

介绍介质薄膜透射光谱的测量以及基于分析薄膜透射光谱的计算薄膜光学参数的方法。对制备在玻璃基板上的二氧化钛，二氧化硅和氧化锌薄膜进行了可见光谱区的透射比测量，并用包络线方法和最优化方法对这些透明薄膜的光学参数进行了计算和分析。     

用PECVD技术淀积PbTiO3薄膜

采用ＰＥＣＶＤ技术，以Ｐｂ（Ｃ２Ｈ５）、ＨｉＣｌ４和Ｏ２为反应源，在１７０℃温度下沉积了ＰｂＴｉＯ３功能薄膜，分别对薄膜进行了Ｘ射线荧光光谱、Ｘ光电子能谱、Ｘ射线衍射光谱和扫描电镜的化学组成及形貌等分析。     

稀土铈掺杂的非晶碳薄膜的微结构及其抗凝血性能的影响

采用射频磁控溅射方法制备了稀土元素铈掺杂的非晶碳薄膜．通过改变稀土铈的掺杂量，利用拉曼光谱，紫外可见光谱等方法，研究了稀土元素铈掺杂的非晶碳薄膜的微结构、成分、形貌及亲水性的影响。结果表明：在非晶碳薄膜中掺入稀土元素铈后，薄膜中sp^3／sp^2的比率显著发生变化，薄膜的疏水性明显提高。血小板粘附实验表明掺杂稀土铈有利于改变非晶碳薄膜的抗凝血性能，适当的掺杂量能使薄膜的血液相容性得到优化。分析了稀土元素铈对材料的血容性能的影响机制．     

WO3/Si纳米晶薄膜的脉冲准分子激光沉积及结构分析

采用脉冲准分子激光大面积扫描沉积技术，在Si(111)单晶衬底上沉积了WOx薄膜，采用X射线衍射（XRD）、喇曼光谱（RS），付里叶红外光谱（FT－IR）及透射电镜扫描附件（STEM）对不同条件下沉积的样品进行了结构分析，结果表明，氧分压和沉积温度是决定薄膜结构和成份的主要参数，在沉积温度300℃以上及20Pa氧压下得到了三斜相纳米晶WO3薄膜。     

类金刚石薄膜的紫外辐照研究

对射频等离子体方法制备的类金刚石（以下简称DLC）薄膜样品进行了紫外辐照，采用电阻率，Raman光谱及红外光谱研究了紫外光（以下简称UV）辐照对DLC薄膜结构与特征的影响，Raman光谱表明：紫外光对DLC薄膜中SP^3C-H键的破坏作用非常明显，红外（IR）光谱结果进一步验证了这一结果，经UV辐照后，DLC薄膜的电阻率呈变小趋势，这说明薄膜被强烈氧化，最后呈现石墨化趋势。     

用于HIT太阳能电池的本征非晶硅薄膜

带本征薄层的异质结（HIT）太阳能电池要求本征非晶硅薄膜具有生长速率低，暗电导大，光学带隙宽的特点。采用等离子增强化学气相沉积（PECVD）制备符合HIT太阳能电池要求的本征非晶硅薄膜，并通过分析薄膜的透射光谱，采用Tauc法计算了薄膜的光学带隙，为约1．87eV，衬底温度为180℃，放电功率为80W时获得的薄膜性能最佳。     

TiOSO4水性溶胶制备TiO2薄膜及其亲水性研究

采用TiOSO4水性溶胶制备了TiO2薄膜，通过X射线衍射(XRD)、原子力显微镜(AFM)、紫外可见光谱(UV—Vis)和薄膜表面接触角对TiO2薄膜进行了表征并进行了亲水性研究．结果表明采用TiOSO4水性溶胶制备的TiO2薄膜具有优异的光照亲水性；在100-500℃之间热处理，温度的升高有利于亲水性的改善．     

TiB2超硬薄膜的合成及性能

采用离子束溅射方法制备了ＴｉＢ２硬质薄膜，ＡＦＭ观察表明薄膜表面非常光谱，ＡＥＳ、ＸＲＤ和ＸＰＳ分析证明薄膜中主要是Ｂ、Ｔｉ比为１．８，六方结构的ＴｉＢ２多晶体、且呈现强烈的（１０１）择优取向，由超显微压痕测量系统测得的加载、卸载曲线计算得到的薄膜的显微硬度比高达４８ＧＰａ     

具有可见光活性的TiO2薄膜的制备及光催化性能

运用磁控溅射技术在浸渍－提拉法制得的TiO2薄膜上溅射三氧化钨层得到光催化薄膜。采用SEM、XRD、AES、UV－vis漫反射光谱等方法表征催化剂薄膜的厚度、晶相结构、化学元素组成及光吸收性能。以甲基橙的光催化降解为反应模型，高压汞灯为光源，溅射有三氧化钨薄膜的光催化活性低于纯TiO2薄膜；滤过紫外光后，溅射有三化钨的薄膜光催化活性明显高于纯TiO2薄膜。本实验提供了一种制备高可见光活性的TiO2薄膜的方法。     

Deposition and optical studies of silicon carbide nitride thin films

Thin films of silicon carbide nitride (SiCN) have been prepared by reactive radioactive frequency (r.f.) sputtering using SiC target and nitrogen as the reactant gas. Deposition rates are studied as a function of deposition pressures and argon-nitrogen flow ratios. The optical absorption studies indicated the band edge shifting of the films when the nitrogen ratios are increased during deposition. Fourier transform infrared spectroscopy (FTIR) analysis on the films indicated several stretching modes corresponding to SiC, SiN and CN compositions.     

磁控溅射参数对CNx薄膜成分,化学结合状态和硬度的影响

应用直流非平衡磁控溅射系统在不同实验条件下制备了ＣＮｘ薄膜材料，其最大氮原子百分含量为３７％，通过傅里叶变换红外光变。Ｘ光光电子能谱以及显微压痕法的测量和分析，对得到的ＣＮｘ薄膜材料中的原子化学结合状态，硬度等性质进行了表征。     

Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates

Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.     

Carbon nitride films on diamond layers and their thermal behavior

A CN/diamond composite structure on silicon substrate was obtained by a two-step technique in preparing polycrystalline diamond layers by microwave plasma assisted chemical vapor deposition and then CN films by reactive rf magnetron sputtering. The samples were annealed at different temperatures in the range of 200 to 800 °C, respectively. All the as-grown and annealed CN films, which fully covered the diamond underlayer with the formation of a rather adhesive interface, exhibited amorphous nature uniquely. X-ray photoelectron spectroscopy and energy-dispersive x-ray studies both revealed that the nitrogen concentration of the films decreases after annealed at high temperature. Infrared spectra also suggested the thermal modifications on the content and structure of the CN films. The electric resistivity varies in a large range as the annealing temperature increasing, and confirmed the bonding configuration in favor of a graphite-like structure at high temperature.     

Study of adhesion of carbon nitride thin films on medical alloy substrates

The adhesion improvement of biocompatible thin films on medical metal alloy substrates commonly used for joint replacement implants is studied. Diamond-like carbon (DLC) and carbon nitride (CN) thin films are, because of their unique properties such as high hardness, wear resistance and low friction coefficient, candidates for coating of medical implants. However, poor adhesion on substrates with high thermal expansion coefficient limits their application. We deposited CN films by pulsed DC discharge vacuum sputtering of graphite target on CoCrMo and Ti6Al4V substrates. Surface nitridation of the substrate, changing the deposition parameters and use of interlayer led to improved adhesion properties of the films. Argon and nitrogen gas flow, thickness of the film and frequency of the deposition pulses had significant influence on the adhesion to the substrate. Properties of deposited films were analyzed using Scanning Electron Microscopy, Raman spectroscopy and tribology tests.     

Correlation between the OES plasma composition and the diamond film properties during microwave PA-CVD with nitrogen addition

The mechanisms of nitrogen incorporation in diamond are still an unsolved riddle. This is mainly due to the complexity of the processes involved as they not only depend on empirical parameters (e.g. vessel pressure, substrate temperature, the gas phase composition, type and concentration of the nitrogen containing compound used), but also on the plasma chemistry and the surface chemical reactions. In this study, small quantities (ppm range) of diatomic nitrogen are added to a conventional hydrogen-methane feed gas mixture in order to investigate the effect of nitrogen incorporation in diamond films prepared by microwave plasma assisted chemical vapour deposition (CVD). Optical emission spectroscopy (OES) is used to survey the plasma composition during deposition. The intensities of the CN, CH and C₂ emitting radicals and the Balmer atomic hydrogen emission lines are correlated to the Raman film quality and to the nitrogen content in the film measured by secondary ion mass spectrometry (SIMS).     

Transparent conducting ZnO : Al films on different organic substrates deposited by r.f. sputtering

1. IntroductionThansparellt conducting zinc oxide films have beenextensively studied in recede years, because of theirlow material cost, relatively low deposition temperature and stability in hydrogen plasma compared withITO and SnOZ films[1]. These adVatages are of considerable interest for electrrvoptical conversion device.Compared with undoped ZnO, Al-doped ZnO filmshave lobed resistivity and better stability. nansparellt conducting films deposited on organic substrateshave many lments…     

Deposition of amorphous CN(x) materials in BrCN plasmas: exploring adhesion behavior as an indicator of film properties

Adhesion and delamination behavior of amorphous carbon nitride (a-CN(x)) is critical to development of wear resistant materials and protective coatings. Here, the composition and delamination behavior of a-CN(x) films was explored utilizing BrCN, CH?CN, and CH? as film precursors, either alone or in combination with one another. Film delamination depends on film thickness and plasma composition as well as post deposition treatment conditions. Delamination is not observed with films deposited from 100% CH?CN discharges, whereas films of similar thickness deposited from 100% BrCN plasmas delaminate almost immediately upon exposure to atmosphere. Exploration of these differences in delamination behavior is discussed relative to contributions of humidity, hydrocarbon species, and ion bombardment during deposition in conjunction with compositional studies using X-ray photoelectron spectroscopy (XPS).     

溅射工艺对SiCN薄膜沉积及光性能的影响

本文利用射频磁控溅射工艺制备了ＳｉＣＮ薄膜,研究了基本工艺参数如溅射功率、Ｎ分压对薄膜沉积和光学性能的影响．研究结果表明：溅射制备的薄膜中形成了复杂的网络结构,膜中三元素Ｓｉ、Ｃ和Ｎ两两之间形成了共价键．Ｎ分压的提高降低了薄膜的沉积速率．Ｎ流量的提高使光学带隙增大．溅射功率的提高使薄膜的沉积速率提高,但使得光学带隙减小．     

Atomic layer deposition of SiO2 thin films using tetrakis(ethylamino)silane and ozone

We examined the atomic layer deposition (ALD) of silicon dioxide thin films on a silicon wafer by alternating exposures to tetrakis(ethylamino)silane [Si(NHC2H5)4] and O3. The growth kinetics of silicon oxide films was examined at substrate temperatures ranging from 325 to 514 degrees C. The deposition was governed by a self-limiting surface reaction, and the growth rate at 478 degrees C was saturated at 0.17 nm/cycle for Si(NHC2H5)4 exposures of 2 x 10(6) L (1 L = 10(-6) Torr x s). The films deposited at 365-404 degrees C exhibited a higher deposition rate of 0.20-0.21 nm/cycle. However, they contained impurities, such as carbon and nitrogen, and showed poor film qualities. The concentration of impurities decreased with increasing substrate temperature. It was found that the films deposited in the high-temperature regime (478-514 degrees C) showed excellent physical and electrical properties equivalent to those of LPCVD films.