A 10–35 GHz Low Power Bulk-DrivenMixer Using 0.13 $mu$m CMOS Process

10-35 GHz doubly balanced mixer using a 0.13-mum CMOS foundry process is presented in this letter. Using the bulk-driven topology, the number of transistors of the doubly balanced mixer is reduced; thus the mixer can achieve a low supply voltage and low power consumption. This bulk-driven mixer exhibits a measured conversion gain of -1 plusmn 2 dB from 10 to 35 GHz of radio frequency (RF) with a fixed intermediate frequency (IF) of 100 MHz. The measured local oscillation (LO) to IF and RF-IF isolations are better than 30 dB. The chip area of the mixer is 0.6 times 0.4 mm². The total power consumption included output buffer is only 6 mW.     

High-Performance Continuous-Wave Operation of $lambda sim {hbox {4.6}}~mu{hbox {m}}$ Quantum-Cascade Lasers Above Room Temperature

We report the high-performance continuous-wave (CW) operation of 10-mum-wide quantum-cascade lasers (QCLs) emitting at lambda ~ 4.6mum, based on the GaInAs-AlInAs material without regrowth, in epilayer-up and -down bonding configurations. The operational characteristics of QCLs such as the maximum average power, peak output power, CW output power, and maximum CW operating temperature are investigated, depending on cavity length. Also, important device parameters, i.e., the waveguide loss, the transparency current density, the modal gain, and the internal quantum efficiency, are calculated from length-dependent results. For a high-reflectivity (HR) coated 4-mm-long cavity with epilayer-up bonding, the highest maximum average output power of 633 mW is measured at 65% duty cycle, with 469 mW still observed at 100%. The laser exhibits the maximum wall-plug efficiencies of 8.6% and 3.1% at 298 K, in pulsed and CW operatons, respectively. From 298 to 393 K, the temperature dependent threshold current density in pulsed operation shows a high characteristic temperature of 200 K. The use of an epilayer-down bonding further improves the device performance. A CW output power of 685 mW at 288 K is achieved for the 4-mm-long cavity. At 298 K, the output power of 590 mW, threshold current density of 1.52 kA/cm², and maximum wall-plug efficiency of 3.73% are obtained under CW mode, operating up to 363 K (90degC). For HR coated 3-mm-long cavities, laser characteristics across the same processed wafer show a good uniformity across the area of 21 cm², giving similar output powers, threshold current densities, and emission wavelengths. The CW beam full-width at half-maximum of far-field patterns are 25deg and 46deg for the parallel and the perpendicular directions, respectively.     

Reliability Bounds for Multi-State $k$-out-of- $n$ Systems

Algorithms have been available for exact performance evaluation of multi-state k-out-of-n systems. However, especially for complex systems with a large number of components, and a large number of possible states, obtaining "reliability bounds" would be an interesting, significant issue. Reliability bounds will give us a range of the system reliability in a much shorter computation time, which allow us to make decisions more efficiently. The systems under consideration are multi-state k-out-of-n systems with i.i.d. components. We will focus on the probability of the system in states below a certain state d, denoted by Q_sd. Based on the recursive algorithm proposed by Zuo & Tian [14] for performance evaluation of multi-state k-out-of-n systems with i.i.d. components, a reliability bounding approach is developed in this paper. The upper, and lower bounds of Q_sd are calculated by reducing the length of the k vector when using the recursive algorithm. Using the bounding approach, we can obtain a good estimate of the exact Q_sd value while significantly reducing the computation time. This approach is attractive, especially to complex systems with a large number of components, and a large number of possible states. A numerical example is used to illustrate the significance of the proposed bounding approach.     

Analytical HFET $I$– $V$ Model in Presence of Current Collapse

A compact analytical model of short-channel AlGaN/GaN HEMTs in the presence of a current collapse is presented. The model is based on an experimentally established trapping mechanism at the gate edges and relies on significant differences between the characteristic carrier capture-escape times and typical RF signal periods. For the first time, we implement the theory describing electric field distributions in the HEMT gate-to-drain spacing region, with and without trapped charge distributions. By consequently accounting for velocity saturation effects in gated and trapped regions of the device, the presented model shows good agreement with the experimental data. The model uses a minimal number of fitting parameters, most of which are physical parameters describing velocity-field dependence of the carriers.     

Two-Way Handshaking Circular Sequential $k$-Out-of- $n$ Congestion System

Many communication systems require a two-way, or three-way handshaking process to improve their dependability & authenticity in order to achieve a more successful operation. In this paper, we present a new two-way handshaking reliability model based upon threshold-based cryptography systems. Such systems require a two-way handshaking process to i) establish a group of participated servers in the first handshaking process, and ii) calculate a cipher with successfully connected servers collaboratively in the second handshaking process. When the servers are attempted, each server has three known connection probabilities in the following three states: i) successful, ii) breakdown, and iii) congested. These connection probabilities are unchanged in both handshaking processes. During the first handshaking process, we establish connections that more than servers are willing to participate. For the second handshaking process, the system becomes successful as soon as we can connect these servers successfully again. Because we need to connect servers successfully in the second handshaking process, we would rather connect additional servers besides the servers required to be connected successfully in the first handshaking process. This preference will minimize the chance that the system breaks down when fewer than servers can be reconnected successfully in the second handshaking process. We refer to this system as a Two-Way Handshaking Circular Sequential-out-of-Congestion (TWHCSknC) system. In this paper, we derived analytical formulas for the system's successful probability & average stop length, and we showed that the TWHCSknC system is a communication system with an efficient two-way handshaking process.     

Subthreshold Parallel FM-to-Digital $Delta$– $Sigma$ Converter With Output-Bit-Stream Addition by Interleaving

Single and parallel subthreshold frequency-modulation-to-digital $Delta$–$Sigma$ modulators (FDSMs) have been implemented in a standard 90-nm CMOS technology. Theoretical and measured results are presented for both topologies. The 512-stage parallel FDSM adopts a tunable delay line and achieves bit-stream addition by interleaving at the output stage. This architecture, with respect to the conventional parallel FDSM, reduces power, area, and complexity at the cost of using clocks with higher speed in its output stage. In addition, compared to the single FDSM, the parallel converter shows an improvement in signal-to-quantization-noise ratio of more than 25 dB at supply voltages as low as 300 mV.      

Modal Gain of 2.4- $mu$m InGaAsSb–AlGaAsSb Complex-Coupled Distributed-Feedback Lasers

High-resolution spectroscopy was used to examine gain characteristics of Cr-grating complex-coupled distributed-feedback (DFB) lasers near 2.4 $mu$m. The single-mode lasers contain InGaAsSb–AlGaAsSb active regions grown by molecular beam epitaxy on GaSb. Modal gain was extracted from the measured amplified spontaneous emission spectra and compared with reference Fabry–PÉrot lasers. The material gain is similar in both cases, having a value near 1300 cm$^{-1}$, while the internal losses are quite different. The DFBs have an additional loss, approximately equal to the lateral Cr grating coupling coefficient. This indicates a fundamental performance limitation for complex-coupled DFBs.      

High Bandwidth Operation of Directly Modulated Laser Based on Quantum-Dash InAs–InP Material at 1.55 $mu$m

The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping have already been demonstrated to increase the modulation bandwidth above 10 GHz, but with complex tunnel injection design and p-doping induced high internal losses. We show in this letter that the use of optimized QDashes and waveguide structure is sufficient to reach such high bandwidth at 1.55 mum. The device is validated by a large signal modulation demonstration at 10 Gb/s.     

Design of Miniaturized Metamaterial Patch Antennas With $mu$-Negative Loading

Recent theoretical studies have shown that circular patch antennas loaded by an inhomogeneous substrate partially filled with a mu-negative (MNG) metamaterial may in principle support a resonant radiating mode, even if the total size of the radiator is significantly smaller than the wavelength of operation. In those theoretical analyses, MNG metamaterials have been assumed as continuous, isotropic and readily available materials, characterized by a proper dispersion in frequency and by inherent ohmic losses. The fabrication of such compact antennas, however, would require the major effort of designing proper subwavelength inclusions that realize the MNG behavior of the substrate, and consequently a careful design of their geometry, location and orientation. The fabrication of a fully isotropic MNG sample to reside underneath the sub-wavelength patch, moreover, may be challenging with the current technological limitations. In this paper, we first show that the proposed sub-wavelength radiator may operate even when the fabricated MNG sample is not isotropic, due to the specific polarization of the magnetic field in the MNG region. Then, we propose a complete design of the magnetic inclusions, presenting full-wave numerical simulations of the structure, which effectively supports the expected resonant mode, despite the small size of the antenna. The comparisons among analytical results of the patch loaded by: (a) the ideal MNG sample applying a simple cavity model; (b) full-wave numerical simulations of the same antenna considering the presence of the feed; and (c) full-wave numerical simulations of the antenna loaded by the proposed magnetic inclusions, show how our design effectively simulate the presence of an MNG sample, allowing the realistic design of a sub-wavelength metamaterial patch antenna with satisfactory matching and radiating features. This may open up new venues in the realization of efficient metamaterial radiating components for practical purposes.     

The Performance of Acoustic-Optical $Q$-switched Mode-Locking 1.34 $mu$m Nd:GdVO$_{4}$ Laser

A diode-end-pumped $Q$ -switched mode-locking $hbox{Nd:GdVO}_{4}$ laser operating at 1.34 $mu{hbox {m}}$ with an acousto-optical (AO) Q-switch in a compact V-type cavity was realized in our experiment for the first time. When the AO Q-switch repetition rate was 10 kHz, the maximum average output power of 750 mW and the pulse energy of 75 $muhbox{J}$ were obtained at the maximum incident pump power of 9 W. The mode-locking modulation depth of about 100% was obtained at certain pump power over the threshold. The mode-locked pulse inside in the $Q$-switched pulse had a repetition rate of 341 MHz, and its average pulsewidth was estimated to be about 350 ps. A developed rate equation model for the $Q$ -switched and mode-locked lasers with an AO Q-switch were proposed by using the hyperbolic secant functional methods. The results of numerical calculations of the rate equations were in good agreement with the experimental results.      

Distributed-Feedback Quantum-Cascade Lasers at 9 $mu$m Operating in Continuous Wave Up to 423 K

Single-mode lasers operating at $lambdaapprox 9 muhbox{m}$ in continuous wave up to 423 K (150 $^{circ}hbox{C}$) were achieved by the combination of strong distributed-feedback coupling, a narrow gain active region design, low intersubband, and free-carrier losses as well as a good thermal management. Tuning of 10 $hbox{cm}^{-1}$ or 0.9% of the center frequency was achieved by heating the device. The threshold current density varies from 1.1 $hbox{kA/cm}^{2}$ at 303 K to 2.4 $hbox{kA/cm}^{2}$ at 423 K. Other devices with low electrical power consumption of 1.6 and 3.8 W for an optical output power of 16 and 100 mW have been demonstrated at 263 K.      

General Error Locator Polynomials for Binary Cyclic Codes With $t le 2$ and $n < 63$

In this paper, we show that a recently proposed algorithm for decoding cyclic codes may be applied efficiently to all binary cyclic codes with tles2 and n<63. This is accomplished by providing structure theorems for the codes in this range and classifying the relevant cases     

Lifetime of Combined $k$-out-of-$n$ , and Consecutive $k_{c}$ -out-of-$n$ Systems

A combined k-out-of-n:F(G) & consecutive k_c -out-of-n :F(G) system fails (functions) iff at least k components fail (function), or at least fcc consecutive components fail (function). Explicit formulas are given for the lifetime distribution of these combined systems whenever the lifetimes of components are exchangeable, and have an absolutely continuous joint distribution. The lifetime distributions of the aforementioned systems are represented as a linear combination of distributions of order statistics by using the concept of Samaniego's signature. Formulas for the mean lifetimes are given. Some numerical results are also presented.     

An Accurate $C$– $V$ Measurement Method for Highly Leaky Devices—Part I

Accurate $C$–$V$ measurement becomes extremely difficult in advanced CMOS technology due to a high level of leakage across the gate dielectric. Recently, a new time-domain reflectometry (TDR)-based $C$–$V$ measurement method was introduced. This new method offers ease of use and high accuracy while being able to handle a very high level of leakage current. It also allows series resistance and overlap capacitance to be extracted simultaneously and accurately without the need for additional measurement. In this paper, the theoretical basis of the TDR $C$–$V$ method is described in detail, along with experimental results.      

High-Power Continuous-Wave Single-Longitudinal-Mode Operation of an Optically Pumped DFB Laser at $lambda sim 3.64~ mu$m

High-power continuous-wave (CW) single-longitudinal-mode emission at 3.64 mum is obtained from an optically pumped distributed-feedback (DFB) laser. The Bragg stopband and two degenerate DFB modes are observed at certain pump powers. The laser incorporates 14 InAs-InGaSb-InAs type-II quantum wells imbedded in an InGaAsSb waveguide. The index-coupled 1-D grating is fabricated in the top clad using interference lithography and plasma etching. A 110-mum-wide stripe from a 1.9-mum CW laser provides both optical pumping and gain guiding. Record high output power of more than 560 mW per side is obtained at 80 K. The wavelength is tunable over a 6.8-nm range by varying the pump power from 1 to 8.1 W.     

Underdetermined Anechoic Blind Source Separation via $ell^{q}$-Basis-Pursuit With $q≪1$

In this paper, we address the problem of underdetermined blind source separation (BSS) of anechoic speech mixtures. We propose a demixing algorithm that exploits the sparsity of certain time-frequency expansions of speech signals. Our algorithm merges lscr^q -basis-pursuit with ideas based on the degenerate unmixing estimation technique (DUET) [Yiotalmaz and Rickard, "Blind Source Separation of Speech Mixtures via Time-Frequency Masking," IEEE Transactions on Signal Processing, vol. 52, no. 7, pp. 1830-1847, July 2004]. There are two main novel components to our approach: 1, our algorithm makes use of all available mixtures in the anechoic scenario where both attenuations and arrival delays between sensors are considered, without imposing any structure on the microphone positions, and 2, we illustrate experimentally that the separation performance is improved when one uses lscr^q-basis-pursuit with q < 1 compared to the q = 1 case. Moreover, we provide a probabilistic interpretation of the proposed algorithm that explains why a choice of 0.1 les q les 0.4 is appropriate in the case of speech. Experimental results on both simulated and real data demonstrate significant gains in separation performance when compared to other state-of-the-art BSS algorithms reported in the literature.     

All-Fiber Picosecond Laser System at 1.5 $mu$m Based on Amplification in Short and Heavily Doped Phosphate-Glass Fiber

Amplification of ultrashort pulses in doped fibers is limited by an onset of nonlinear effects in the fiber. At the 1.5-mum wavelength, single-mode fibers typically have anomalous dispersion. The self-phase modulation combined with dispersion leads to instability of multinanojoule pulses in such fibers. Various techniques developed to amplify pulses beyond the nonlinearity limit typically rely on a delicate balance between dispersive and nonlinear effects in different parts of the laser system. We report a simple all-fiber alternative to these complex techniques that utilizes a rapid amplification of pulses in a short and heavily doped phosphate-glass active fiber. In our preliminary experiments, picosecond pulses at 1.5 mum generated by a passively mode-locked fiber oscillator at a repetition rate of 70 MHz are amplified in a 15-cm-long heavily Er-Yb codoped fiber amplifier to the average output power of 1.425 W. The pulse energy and peak power reach 20.4 nJ and 16.6 kW, respectively, while the pulse distortion is minimal in both temporal and spectral domains. Further power up-scaling is possible by using active phosphate fiber with a large mode area, in the amplifier stage     

A 1.2-GHz Comparator With Adaptable Offset in 0.35- $mu$m CMOS

We apply the technique of floating-gate differential injection to a 1.2-GHz CMOS comparator to achieve arbitrary, accurate, and adaptable offsets. The comparator uses nonvolatile charge storage on floating-gate nodes for either offset nulling or automatic programming of a desired offset. We utilize impact-ionized pFET hot-electron injection to achieve fully automatic offset programming. The design has been fabricated in a commercially available 4-metal, 2-poly 0.35-$mu$m CMOS process. Experimental results confirm the ability to reduce the variance of comparator offset by 3600$times$ and to accurately program a desired offset with maximum observed residual offset of 469 $mu$V and standard deviation of 199 $mu$ V. We achieve controlled injection to accurately program the input offset to voltages uniformly distributed from ${-}1$ to 1 V. The comparator operates at 1.2 GHz with a power consumption of 3.3 mW.      

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $mu$m

We report on the third-order optical nonlinearity of the e ₁ -e ₂ intersubband transition in GaN-AlN quantum wells and the s-p z intraband transition in GaN-AlN quantum dots, both of them in the spectral region around 1.5 mum. The results in terms of third-order susceptibility, together with the ultrafast nature of the nonlinear response, render these GaN-AlN nanostructures particularly suitable for optical switching and wavelength conversion applications.     

22.7-dB Gain $-$19.7-dBm $ICP_{1{rm dB}}$ UWB CMOS LNA

A fully differential CMOS ultrawideband low-noise amplifier (LNA) is presented. The LNA has been realized in a standard 90-nm CMOS technology and consists of a common-gate stage and two subsequent common-source stages. The common-gate input stage realizes a wideband input impedance matching to the source impedance of the receiver (i.e., the antenna), whereas the two subsequent common-source stages provide a wideband gain by exploiting RLC tanks. The measurements have exhibited a transducer gain of 22.7 dB at 5.2 GHz, a 4.9-GHz-wide B _3dB, an input reflection coefficient lower than -10.5 dB, and an input-referred 1-dB compression point of -19.7 dBm, which are in excellent agreement with the postlayout simulation results, confirming the approach validity and the design robustness.