Advanced controlling scheme for a DRAM voltage generator system

An brief overview is given of the voltage generator system of a 1-Gb synchronous DRAM. The design serves as an example for a state-of-the-art DRAM voltage generator system. A general analysis of the required controlling functionality is derived. A universal and flexible controlling scheme for a voltage generator system is presented, which can easily be modified for future voltage generator design. The main aspect of this controlling scheme is a clear separation between logic (digital) controlling functions and (analog) voltage generating functions. A control path that supplies the various voltage generator blocks with configuration information is introduced. Last, the control path is shown to have an additional advantage of increased testability. Hardware results verifying the concept are presented     

A hybrid current/voltage mode on-chip signaling scheme with adaptive bandwidth capability

This brief describes an adaptive bandwidth bus architecture based on hybrid current/voltage mode repeaters for long global RC interconnect static busses that achieves high-data rates while minimizing the static power dissipation associated with current-mode (CM) signaling. An experimental adaptive bandwidth bus test chip fabricated in AMI 1.6-/spl mu/m Bulk CMOS indicates a reduction in power dissipation of approximately 62% over CM sensing and an increase in maximum data rate of 40% over voltage-mode signaling.     

Low-power on-chip supply voltage conversion scheme forultrahigh-density DRAMs

In order to achieve 3.3-V 1-Gb DRAM and beyond, a new on-chip supply voltage conversion scheme that converts 3.3-V external supply voltage, V_ext, to lowered 1.5-V internal supply voltage, V_ent, without any power loss within the voltage converter is proposed. This scheme connects two identical DRAM circuits in series between V_ixt and V_ss. By operation of two DRAM circuits with the same clock timing, the voltage between two DRAMs, V_int, is automatically fixed to 1/2V_ext. Therefore, each upper and lower DRAM circuit can operate at lowered 1/2V_ext without use of the conventional voltage converter. This scheme was successfully verified by an experimental system using 4-Mb DRAMs. Utilizing the proposed scheme, power dissipation was reduced by as much as 50% and stable operation was achieved without access speed penalty     

A CMOS transceiver for DRAM bus system with a demultiplexedequalization scheme

An equalizing transceiver was implemented by using a 0.35-μm CMOS technology for DRAM bus system. An equalization scheme was used in the receiver to reduce intersymbol interference (ISI). To maximize the data rate, a one-to-eight demultiplexing scheme was used in the equalizer of the receiver such that eight equalizers operate in parallel at the clock frequency, which is one-eighth the data rate. The maximum data rates were measured to be 840 Mb/s with twelve 5-pF capacitors connected in uniform spacing along a transmission line. The test criterion for successive transmission was set to the bit-error rate (BER) of 10^-12 for the pseudorandom binary sequence (PRBS) data. The effectiveness of equalizers was demonstrated by measuring the BER with equalizers on and off, respectively. The chip size was 800×400 μm² and the supply voltage was 3.3 V     

Dual tone and modem frequency generator with on-chip filters and voltage reference

A single-chip CMOS circuit is described that contains a dual-tone multifrequency and modem frequency generator. For optimum performance and economy, switched-capacitor techniques are used for the on-chip bandgap reference voltage, digital-to-analog converters, and filter. CEPT recommendations on output level stability and distortion are met without recourse to external filtering and without a stabilized supply or external reference voltage. A self-aligned contact CMOS process with 4-/spl mu/m design rules and with 500-/spl Aring/-thick gate oxide is used to manufacture the circuit.     

A 50-ns 16-Mb DRAM with a 10-ns data rate and on-chip ECC

A high-speed 16-Mb DRAM chip with on-chip error-correcting code (ECC), which supports either 11/11 or 12/0 RAS/CAS addressing and operates on a 3.3- or 5-V power supply, is described. It can be packaged as a 2-Mb×8, 4-Mb×4, 8-Mb×2, or 16-Mb×1 DRAM, And is capable of operating in fast page mode, static column mode, or toggle mode. Speed and flexibility are achieved by a pipeline layout and on-chip SRAMs that buffer entire ECC words. The use of redundant word and bit lines in conjunction with the ECC produces a synergistic fault-tolerance effect     

A 2-ns 16K bipolar ECL RAM with reduced word-line voltage swing

A reduced word-line voltage swing (RWS) circuit configuration that results in a high-speed bipolar ECL (emitter coupled logic) RAM is proposed. The write operation can be performed with the configuration in the condition of reduced word-line voltage swing, which causes write operation error in conventional circuit configurations. The proposed configuration cuts off the hold current of the selected memory cell, and then the low-voltage node is charged up through the load p-n-p transistor. A 16-kb ECL RAM with a p-n-p loaded memory cell was fabricated by advanced silicide-base transistor (ASBT) process technology. A 2-ns access time was obtained with 1.8-W power consumption in which the word-line voltage swing was reduced by 0.7 V from a conventional case. Simulation results show that the access time is improved by 25% compared with a conventional case. Simulation results also show that writing time becomes comparable with the conventional time of 1.7 ns when the load p-n-p transistor has a saturation current of 5.0× 10¹⁷ A and a current gain of 1.0. The saturation current is 5 times larger and the current gain is 5 times smaller than those of the standard lateral p-n-p transistor     

A robust self-calibrating transmission scheme for on-chip networks

Systems-on-Chip (SoC) design involves several challenges, stemming from the extreme miniaturization of the physical features and from the large number of devices and wires on a chip. Since most SoCs are used within embedded systems, specific concerns are increasingly related to correct, reliable, and robust operation. We believe that in the future most SoCs will be assembled by using large-scale macro-cells and interconnected by means of on-chip networks. We examine some physical properties of on-chip interconnect busses, with the goal of achieving fast, reliable, and low-energy communication. These objectives are reached by dynamically scaling down the voltage swing, while ensuring data integrity-in spite of the decreased signal to noise ratio-by means of encoding and retransmission schemes. In particular, we describe a closed-loop voltage swing controller that samples the error retransmission rate to determine the operational voltage swing. We present a control policy which achieves our goals with minimal complexity; such simplicity is demonstrated by implementing the policy in a synthesizable controller. Such a controller is an embodiment of a self-calibrating circuit that compensates for significant manufacturing parameter deviations and environmental variations. Experimental results show that energy savings amount up to 42%, while at the same time meeting performance requirements.     

A 34-ns 16-Mb DRAM with controllable voltage down-converter

A high-speed 16-Mb DRAM with high reliability is reported. A multidivided column address decoding scheme and a fully embedded sense-amplifier driving scheme were used to meet the requirements for high speed. A low-power hybrid internal power supply voltage converter with an accelerated life-test function is also proposed and was demonstrated. A novel substrate engineering technology, a retrograded well structure formed by a megaelectronvolt ion-implantation process, provides a simple process sequence and high reliability in terms of soft error and latch-up immunity.<>     

Clock distribution scheme for high-speed DRAM

A novel clock distribution scheme is proposed for high-speed DRAM to minimise clock-skew among data buffers. It has ideally zero-skew characteristic by employing folded clock lines and phase blending circuits. Simulation results show that the maximum clock-skew between two receivers located 4 mm apart is less than 20 ps, regardless of process, voltage, and temperature variations     

An ADC BIST with on-chip ramp generator

This work presents built-in self-test (BIST) techniques for the production testing of mixed signal circuits. The special test strategy for the typical mixed-signal component analog-to-digital converter (ADC) is discussed. The traditional test for such mixed-signal components can be completed through a DSP-based mixed-signal tester with an arbitrary waveform generator and a signal digitizer, but such a test is very costly and time consuming. Hence, a BIST strategy based on an on chip ramp generator (OCRG) is proposed in this work for testing ADC. This BIST method has an advantage testing ADC without DAC to overcome area overhead. This BIST method realizes the test controller, test pattern generation and output response analyser at the aspect of the on-chip circuitry. The demonstration of the proposed BIST is given through various simulation results in the last parts of this work.     

ASMD with duty cycle correction scheme for high-speed DRAM

An analogue synchronous mirror delay with duty cycle-correction scheme (ASMDCC), to improve the data transmission performance between DRAM and system, is proposed. The ASMDCC achieves duty cycle correction and clock synchronisation at once within two clock cycles, by using a half value current source. The simulation results show the duty cycle of the internal clock is stabilised with less than ±100 ps deviation from 50% for the wide duty cycle range     

A high-speed four-phase clock generator for low-power on-chip SerDes applications

In this work we present a low-power, low-area and high-speed fully CMOS quadrature clock generator for on-chip SerDes applications. The device utilizes a couple of differential prescalers for high speed frequency division and four duty cycle adjusters to set the duty cycle of the produced clock signals at 50% of the clock period. The circuit was implemented with the STMicroelectronics 65 nm process technology using only 125 transistors and it occupies an active area of under 2.34 μm². With a power supply of 1.1 V the complete circuit consumes 89.56 μW at room temperature.     

一种基于电压控制电流源的单片LDO稳压器的设计与实现

提出了一种单片集成的高电源抑制比LDO稳压器,主要应用于PLL中VCO和电荷泵的电源供给。该稳压器采用电压控制电流源（VCCS）补偿方案,与其他补偿方法相比,VCCS补偿仅需要一个0.18 pF的电容。误差放大器采用折叠共源共栅结构,可以提供高的电源抑制比,并且使得设计的LDO为两级放大器结构,有利于简化补偿网络。文中设计的LDO在低频时电源抑制比（PSR）为-58.7 dB,在1MHz处的电源抑制比为-20 dB。采用0.35 µm CMOS工艺流片,测试结果表明,本文设计的LDO可以为负载提供50 mA的电流。     

A full on-chip CMOS low-dropout voltage regulator with VCCS compensation

A full on-chip CMOS low-dropout(LDO) voltage regulator with high PSR is presented.Instead of relying on the zero generated by the load capacitor and its equivalent series resistance,the proposed LDO generates a zero by voltage-controlled current sources for stability.The compensating capacitor for the proposed scheme is only 0.18 pF,which is much smaller than the capacitor of the conventional compensation scheme.The full on-chip LDO was fabricated in commercial 0.35μm CMOS technology.The active chip area...     

Dual-operating-voltage scheme for a single 5-V 16-Mbit DRAM

A dual-operating-voltage scheme (5 V for peripheral circuits and 3.3 V for the memory array) is shown to be the best approach for a single 5-V 16-Mb DRAM (dynamic random-access memory). This is because the conventional scaling rule cannot apply to DRAM design due to the inherent DRAM word-line boosting feature. A novel internal voltage generator to realize this approach is presented. Its features are the switching of two reference voltages, a driver using a PMOS-load differential amplifier, and the word-line boost based on the regulated voltage, which can ensure a wider memory margin than conventional circuits. This approach is applied to an experimental 16-Mb DRAM. A 0.5% supply-voltage dependency and 30-ns recovery time are achieved     

Analysis of buck converters for on-chip integration with a dual supply voltage microprocessor

An analysis of an on-chip buck converter is presented in this paper. A high switching frequency is the key design parameter that simultaneously permits monolithic integration and high efficiency. A model of the parasitic impedances of a buck converter is developed. With this model, a design space is determined that allows integration of active and passive devices on the same die for a target technology. An efficiency of 88.4% at a switching frequency of 477 MHz is demonstrated for a voltage conversion from 1.2-0.9 volts while supplying 9.5 A average current. The area occupied by the buck converter is 12.6 mm/sup 2/ assuming an 80-nm CMOS technology. An estimate of the efficiency is shown to be within 2.4% of simulation at the target design point. Full integration of a high-efficiency buck converter on the same die with a dual-V/sub DD/ microprocessor is demonstrated to be feasible.     

A 100-MHz 4-Mb cache DRAM with fast copy-back scheme

A 4-Mb cache dynamic random access memory (CDRAM), which integrates 16-kb SRAM as a cache memory and 4-Mb DRAM into a monolithic circuit, is described. This CDRAM has a 100-MHz operating cache, newly proposed fast copy-back (FCB) scheme that realizes a three times faster miss access time over with the conventional copy-back method, and maximized mapping flexibility. The process technology is a quad-polysilicon double-metal 0.7-μm CMOS process, which is the same as used in a conventional 4-Mb DRAM. The chip size of 82.9 mm² is only a 7% increase over the conventional 4-Mb DRAM. The simulated system performance indicated better performance than a conventional cache system with eight times the cache capacity     

A configurable DRAM macro design for 2112 derivative organizationsto be synthesized using a memory generator

This paper describes a DRAM macro design from which 2112 configurations up to 32 Mb can be synthesized using a memory generator. The memory generator automatically creates the layout of a DRAM macro in accordance with specification inputs such as memory capacity, address count, bank count, and I/O bits count. An expandable floor layout scheme achieves the macro size comparable to that of handicraft-designed DRAM. The memory generator can customize a configurable redundancy scheme for various macro configurations. Unified testing circuits make it possible to test DRAM macros with more than 500 interface pins in a direct-memory-access mode with 33 test pads. Up to four macros on the same chip can be tested with them. Test chips with 4-Mb DRAM and with 20-Mb DRAM fabricated with 0.35-μm technology showed 150-MHz operation     

An on-chip back-bias generator for MOS dynamic memory

An on-chip back-bias generator for 64K dynamic MOS RAM has been developed.The use of this generator achieves the goal of a single 5 V power supply part while preserving the advantages of substrate bias in n-channel MOS technology. These advantages include the elimination of substrate injection current from localized forward biasing of diodes, improved speed and power characteristics, and a larger differential data signal on the bit sense lines. The generator circuit avoids several pit-falls on on-chip V/SUB BB/ generation. The circuit pumps to a known regulated voltage. This avoids substrate drift with changes in substrate current resulting from changes in cycle time. This drift will change device characteristics and degrade storage levels. A unique two-level reference scheme avoids changes in substrate bias voltage that otherwise result from the shift in V/SUB BB/ between precharged and active memory states when memory duty cycle changes. The standby power used by the generator is only 0.74 mW.