Properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction

The electronic and optical properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction were reported. By incorporating ZnO–GaN with the same wurtzite structure and the similar lattice constant, a heterojunction was fabricated. The junction properties were evaluated by measuring the electrical characteristics. The n-ZnO/n-GaN heterostructure exhibits a non-ideal I–V behavior with the ideality factor greater than unity that could be ascribed to the interfacial layer, interface states and series resistance. The forward turn on voltage is about 0.7 V and the reverse breakdown voltage is more than 2 V. The optical band gaps of the ZnO film and GaN using optical absorption method were found to be 3.272 eV and 3.309 eV, respectively. The fundamental absorption edge in the film is formed by the direct allowed transitions.     

Rapid erasing of wettability patterns based on TiO2-PDMS composite films

TiO₂-polydimethylsiloxane (TiO₂-PDMS) composite films are prepared using the sol–gel method from a Ti(OBu)₄–benzoylacetone solution containing PDMS. The prepared films are cured by irradiation with ultraviolet (UV) light. Structural changes in the films after UV irradiation are confirmed by UV–vis absorption experiments, which show that an absorption band characteristic of the benzoylacetonate chelate rings disappears. This finding is ascribed to structural changes associated with the dissociation of the chelate rings. The IR spectra of the thin films exhibit a broad absorption band after UV irradiation, indicating that a Ti–O–Ti network forms in the thin film. Contact angles are measured for the TiO₂-PDMS thin films, showing wettability conversion from hydrophobic to superhydrophilic states by irradiation with oxygen plasma for 1 s. This phenomenon is explained by XPS experiments which reveal that the number of carbon atoms decreases, whereas the number of oxygen atoms increases on the surface of the TiO₂-PDMS composite films. Finally, hydrophobic–superhydrophilic patterns are fabricated based on a patterned TiO₂-PDMS composite film. The film displays a rapid change to superhydrophilicity over the whole film surface upon plasma irradiation for 1 s, which means that the wettability patterns are rapidly erasable.     

Polarization effect on the photocurrent of Pt sandwiched multi-crystalline ferroelectric films

Based on the analysis of the photocurrent behavior of the Pt sandwiched (Bi_3.7Nd_0.3)Ti₃O₁₂ (BNT) films deposited by sol–gel method, the mechanism of the polarization effect on the photocurrent of Pt sandwiched multi-crystalline ferroelectric films was clarified that, in ferroelectric films irradiated by the extra light, the depolarization field directly gives more contribution to the photocurrent when the polarization aligned under the external poling voltage, while the variation of the top or bottom interface Schottky barriers, because of the presence of the polarization charge near the top or bottom interface, have a indirect and subordinate influence on the photocurrent.     

High luminescence quantum efficiency of green mesophase silicate thin film incorporated with rare earth complex

Mesophase silica thin film doped with in-situ formed binary terbium (Tb) complex was synthesized through a simple one-step evaporation-induced self-assembly method. In this process, the precursors of rare earth complex and surfactant were added into hydrolyzed tetramethoxy-silane (TMOS) together and the inorganic/organic mesophase thin film was formed after spin coating. The mesophase structure was characterized as a 2D-hexagonal structure by X-ray diffraction (XRD) analysis. The excitation spectra (λ_em = 544 nm) and emission spectra (λ_ex = 315 nm) indicated that the binary complex, Tb(SA)₃, formed in-situ during the formation of the film. Under the UV excitation, the mesophase silica thin film showed bright and consistent green luminescence. The luminescence quantum efficiency of the hybrid thin film was confirmed to be 35.2%.     

Crystal orientation dependence of the out-of-plane dielectric properties for barium stannate titanate thin films

The orientation-dependent out-of-plane dielectric properties of barium stannate titanate (Ba(Sn_0.15Ti_0.85)O₃ (BTS)) thin films prepared by sol–gel method were investigated. Films with (1 0 0), (1 1 0), and (1 1 1) orientation were grown on LaNiO₃-buffered (1 0 0), (1 1 0), and (1 1 1) LaAlO₃ (LAO) single-crystal substrates, respectively. The different temperature of the dielectric constant maximum (T_m) of the BTS thin films with different orientation was believed to be attributing to stress inside the films. Films with the (1 1 1) orientation had higher relative dielectric constant and tunability than (1 0 0)- and (1 1 0)-oriented films. This difference in dielectric properties in these three kinds of oriented BTS films may be attributed to change in the direction and magnitude of electric polarization in orientation engineered BTS films and stress in the films.     

Evidence of phase heterogeneity in sol–gel Na0.5K0.5NbO3 system

Na_0.5K_0.5NbO₃ thin films have been synthesised via a sol–gel route using commercially available ethoxides of sodium, potassium and niobium. X-ray diffraction confirmed that film crystallisation occurred at ≥600 °C, but extra peaks indicated the presence of secondary phase(s). The thin films displayed non-ferroelectric polarisation hysteresis loops. Evidence of phase heterogeneity was found from detailed analyses of the thermochemistry of the NKN precursor gels which showed multiple heating DTA exotherms for crystallisation around 480–550 °C. Additionally, heating DTA endotherms and cooling exotherms for NKN gels around 800–850 °C confirm the presence of a second phase.     

Characterization on pulsed laser deposited nanocrystalline ZnO thin films

Nanocrystalline zinc oxide thin films were deposited on glass and silicon substrates by using pulsed laser deposition at different laser energy densities (1.5, 2, and 3 J/cm²). The film thickness, surface roughness, composition, optical and structural properties of the deposited films were studied using an α-step surface profilometer, atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), optical transmittance, and X-ray diffraction (XRD), respectively. The film thickness was calculated as 244 nm. AFM analysis shows that the root-mean-square roughness increases with increasing laser energy density. XPS analysis shows that the interaction of zinc with oxygen atoms is greatly increased at high laser energy density. In the optical transmittance spectra, a shift of the absorption edge towards higher wavelength region confirms that the optical band gap increases with an increase in laser energy density. The particle size of the deposited films was measured by XRD, it is found to be in the range from 7.87 to 11.81 nm. It reveals that the particle size increases with an increase in laser energy density.     

Gold nanoparticles into Ti1−xZnxO2 films: Synthesis,structure and application

The gold particles of certain size were incorporated into Ti_1−xZn_xO₂ films by sol–gel method. The synthesis conditions predetermine the size and shape of gold nanoparticles, which were monitored by the absorption spectra and SEM images. The results of Raman spectra measurements indicate that Au nanoparticles inhibit the grain growth of anatase within the film. The photocatalytic activity of Au/Ti_1−xZn_xO₂ films in the degradation of tetracycline hydrochloride depends on the sizes of Au particles.     

Structural and optical characterization of Al-doped ZnO films prepared by thermal oxidation of evaporated Zn/Al multilayered films

Aluminum-doped zinc oxide (ZnO:Al) thin films (t = 68–138 nm) were prepared by thermal oxidation in air flow, at 720 K, of the multilayered metallic Zn/Al thin stacks deposited in vacuum onto glass substrates by physical vapor deposition. The effect of Al content (3.7–8.2 at.%) on the structural (crystallinity, texture, stress, surface morphology) and optical (transmittance, absorbance, energy band gap) characteristics of doped ZnO thin films was investigated. The X-ray diffraction spectra revealed that the Al-doped ZnO films have a hexagonal (wurtzite) structure with preferential orientation with c-axis perpendicular to the substrate surface. A tensile residual stress increasing with Al content was observed. The films showed a high transmittance (about 90%) in the visible and NIR regions. The optical band gap value was found to decrease with Al content from 3.22 eV to 3.18 eV. The results are discussed in correlation with structural characteristics and Al content in the films.     

Adsorptive properties of sol–gel derived hybrid organic/inorganic coatings

Hybrid organic-inorganic sol–gel derived coatings have been prepared by dip coating on glass substrates from alcoholic solutions of tetraethoxysilane (TEOS), methyltriethoxysilane (MTES), 3-aminopropyltriethoxysilane (APTES), 3-glycidoxypropyltrimethoxysilane (GPTMS) and phenyltriethoxysilane (PhTES). The hybrid materials have been fully characterized by means of solid state NMR spectroscopy and X-ray diffraction. The degree of cross-linking and the extent of interaction between silica and silsesquioxane phases appear dependent on the ratio between TEOS and organotrialkoxysilane and on the chemical features of the organic function linked to silicon, and influence the sorption ability towards aromatic compounds of hybrid films. The hybrid coatings have been put into an optical-grade quartz chamber placed into a UV–VIS–NIR spectrophotometer and the organic compounds have been allowed flowing through the chamber recording of molecule absorption spectra vs. time. Absorbance curves vs. time have also been collected at a fixed wavelength for different molecule-coating couples and simple kinetic models have been used for comparing the adsorption capability of the different films, which has been related to the chemical interactions between molecules and coatings.     

Low voltage operated,sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

Low power-driven oxide thin film transistor (TFT) with a high-k gate dielectric is fabricated by a simple solution process. Sol–gel derived Gd₂O₃ film exhibits the dielectric constant in the range of 9–14 with breakdown field as high as 3.5 MV cm⁻¹. Zn–In–Sn–O based TFTs combined with a corresponding film demonstrate the readiness of solution processed high-k film as gate insulators. The resultant device exhibits the enhanced performance with the field-effect mobility of ∼1.9 cm² V⁻¹ s⁻¹, which is improved by a factor of 4.5 comparing with the conventional TFT based on a SiO₂ insulator, and the exceptionally low operating voltage of 6 V.     

Investigation of near-infrared-to-ultraviolet upconversion luminescence of Tm doped NaYF4 phosphors by Yb codoping

2 mol% Tm³⁺ doped NaYF₄ phosphors with 0–98 mol% Yb³⁺ codoping were synthesized by sol–gel method. The phase transition from the mixture of hexagonal and cubic phases to single cubic phase of Tm³⁺–Yb³⁺:NaYF₄ phosphors was investigated with increasing of Yb³⁺ concentration. Near-infrared, red, blue, violet and ultraviolet upconversion emissions of Tm³⁺ were observed from the Tm³⁺–Yb³⁺:NaYF₄ phosphors under 976 nm laser diode excitation, with the strongest near-infrared to ultraviolet emissions at 20 mol% Yb³⁺ codoping. The violet and blue emissions for the ¹D₂ → ³F₄ and ¹G₄ → ³H₆ transitions of Tm³⁺ can be tuned by varying Yb³⁺ codoping concentration, which was elucidated using steady-state equations. The intensity ratio of red emissions for the ³F₂ → ³H₆ and ³F₃→³H₆ transitions of Tm³⁺ was strongly related to the Yb³⁺ codoping concentration and temperature, implying a potential application of Tm³⁺–Yb³⁺:NaYF₄ phosphors for optical temperature sensing.     

Effect of sputtering power on the electrical and optical properties of Ca-doped ZnO thin films sputtered from nanopowders compacted target

In the present work, we have deposited calcium doped zinc oxide thin films by magnetron sputtering technique using nanocrystalline particles elaborated by sol–gel method as a target material. In the first step, the nanoparticles were synthesized by sol–gel method using supercritical drying in ethyl alcohol. The structural properties studied by X-ray diffractometry indicates that Ca doped ZnO has a polycrystalline hexagonal wurzite structure with a grain size of about 30 nm. Transmission electron microscopy (TEM) measurements have shown that the synthesized CZO is a nanosized powder. Then, thin films were deposited onto glass substrates by rf-magnetron sputtering at ambient temperature. The influence of RF sputtering power on structural, morphological, electrical, and optical properties were investigated. It has been found that all the films deposited were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (0 0 2) crystallographic direction. They have a typical columnar structure and a very smooth surface. The as-deposited films show a high transmittance in the visible range over 85% and low electrical resistivity at room temperature.     

PMMA–SiO2 hybrid films as gate dielectric for ZnO based thin-film transistors

In this paper we report a low temperature sol–gel deposition process of PMMA–SiO₂ hybrid films, with variable dielectric properties depending on the composition of the precursor solution, for applications to gate dielectric layers in field-effect thin film transistors (FE-TFT). The hybrid layers were processed by a modified sol–gel route using as precursors Tetraethyl orthosilicate (TEOS) and Methyl methacrylate (MMA), and 3-(Trimethoxysilyl)propyl methacrylate (TMSPM) as the coupling agent. Three types of hybrid films were processed with molar ratios of the precursors in the initial solution 1.0: 0.25, 0.50, 0.75: 1.0 for TEOS: TMSPM: MMA, respectively. The hybrid films were deposited by spin coating of the hybrid precursor solutions onto p-type Si (100) substrates and heat-treated at 90 °C for 24 h. The chemical bonding in the hybrid films was analyzed by Fourier Transform Infrared Spectroscopy to confirm their hybrid nature. The refractive index of the hybrid films as a function of the TMSPM coupling agent concentration, were determined from a simultaneous analysis of optical reflectance and spectroscopic ellipsometry experimental data. The PMMA–SiO₂ hybrid films were studied as dielectric films using metal-insulator-metal structures. Capacitance–Voltage (C–V) and current–voltage (I–V) electrical methods were used to extract the dielectric properties of the different hybrid layers. The three types of hybrid films were tested as gate dielectric layers in thin film transistors with structure ZnO/PMMA–SiO₂/p-Si with a common bottom gate and patterned Al source/drain contacts, with different channel lengths. We analyzed the output electrical responses of the ZnO-based TFTs to determine their performance parameters as a function of channel length and hybrid gate dielectric layer.     

Comparative study of structural and optical properties of ZnO nanostructures prepared by three different aqueous solution methods

In the present work, zinc oxide (ZnO) nanoparticles with different morphologies and sizes were successfully synthesized via three different aqueous solution routes named proteic sol–gel, PVA-assisted sol–gel and microwave-assisted hydrothermal method. Sol–gel samples were crystallized into hexagonal structure after calcination at 350 °C, presenting uniform growth and predominantly spherical particles. On the other hand, the sample produced via hydrothermal method assumed nanorod morphology, probably due to the adsorption of ammonium on the surface of ZnO nuclei, which affect the growth orientation of the crystals. All the samples exhibited a sharp UV emission peak, related to excitonic recombination, and a broad emission band in the visible region, attributed to internal transitions in color centers. Sol–gel samples calcined at the lowest temperatures presented an UV emission intensity that was 44 and 89 times higher than the visible emission, which can be related to the passivation of the defects by hydrogen ions. As-prepared hydrothermal sample presented a broad emission band centered at approximately 596 nm, which is possibly related to OH groups adsorbed on the particle surfaces. Nevertheless, the emission band of samples calcined above 800 °C was shifted to 540 nm, which is probably related to oxygen vacancy according to the results from chemical analysis.     

Investigations on the photocatalytic activity of sol–gel derived plain and Fe/Nb-doped titania coatings on glass substrates

Plain and doped (Fe³⁺ and Nb⁵⁺) titania coatings were deposited by dip coating on soda lime glass substrates using titania sol synthesized by sol–gel route in combination with commercial nanoparticle dispersions. The dopant concentrations were fixed at 0.07 wt% and the coatings heat treated at 400 °C were characterized with respect to their thickness, phase composition, hydrophilicity/hydrophobicity and microstructure. Photocatalytic activity testing was carried out on the coatings by following up the degradation of methylene blue dye for up to 4 h at 1 h time intervals after exposure to sunlight. The effect of a trivalent and pentavalent doping of Ti⁴⁺ sites on photocatalytic activity of TiO₂ was investigated.     

Influence of Nb dopant on the structural and optical properties of nanocrystalline TiO2 thin films

In this study, preparation of Nb-doped (0-20 mol% Nb) TiO₂ dip-coated thin films on glazed porcelain substrates via sol-gel process has been investigated. The effects of Nb on the structural, optical, and photo-catalytic properties of applied thin films have been studied by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Surface topography and surface chemical state of thin films was examined by atomic force microscope and X-ray photoelectron spectroscopy. XRD and Raman study showed that the Nb doping inhibited the grain growth. The photo-catalytic activity of the film was tested on degradation of methylene blue. Best photo-catalytic activity of Nb-doped TiO₂ thin films were measured in the TiO₂-1 mol% Nb sample. The average optical transmittance of about 47% in the visible range and the band gap of films became wider with increasing Nb doping concentration. The Nb⁵⁺ dopant presented substitutional Ti⁴⁺ into TiO₂ lattice.     

Absorption of acrylates and polysilazanes in the far UVC and the VUV regions

A simple but reliable method was developed for the determination of wavelength-dependent absorption coefficients in the vacuum-UV (VUV) spectral range 160 nm < λ < 195 nm.     

Nonlinear optical and optical limiting properties of phthalocyanines in solution and thin films of PMMA at 633 nm studied using a cw laser

We present our results on nonlinear optical (NLO) and optical limiting properties of Tetra tert-butyl phthalocyanine and Zinc tetra tert-butyl phthalocyanine studied at 633 nm using a continuous wave laser. We have evaluated the sign and magnitude of the third-order nonlinearity from the closed aperture Z-scan data while the nonlinear absorption properties were assessed using the open aperture data. We have observed low power optical limiting, with low limiting thresholds, based on nonlinear refraction in both the samples. We also present results on the NLO properties of the same dyes doped in Polymethylmethacrylate (PMMA). These studies indicate that both the phthalocyanines are potential candidates for low power optical limiting applications.     

Black nanocrystalline cubic zirconia: Manganese-stabilized c-ZrO2 prepared via the sol–gel method

Nanostructured manganese-stabilized cubic zirconia (MnSZ) powders, solid solutions of Zr_1−xMn_xO_2−yx = 0, 0.03, 0.06 and 0.09, were obtained via the sol–gel method. The doped phases crystallized at 500 °C into black cubic nanocrystalline zirconia.