Fabrication of quantum dot-sensitized solar cells with multilayer TiO2/PbS(X)/CdS/CdSe/ZnS/SiO2 photoanode and optimization of the PbS nanocrystalline layer

In this work, two multilayer photoanode structures of TiO₂/PbS(X)/CdS/ZnS/SiO₂ and TiO₂/PbS(X)/CdS/CdSe/ZnS/SiO₂ were fabricated and applied in quantum dot-sensitized solar cells (QDSCs). Then, the effect of PbS QDs layer on the photovoltaic performance of corresponding cells was investigated. The sensitization was carried out by PbS and CdS QDs layers deposited on TiO₂ scaffold through successive ionic layer adsorption and reaction (SILAR) method. The CdSe QDs film was also formed by a fast, modified chemical bath deposition (CBD) approach. Two passivating ZnS and SiO₂ layers were finally deposited by SILAR and CBD methods, respectively. It was shown that the reference cell with TiO₂/CdS/ZnS/SiO₂ photoanode demonstrated a power conversion efficiency (PCE) of 3.0%. This efficiency was increased to 4.0% for the QDSC with TiO₂/PbS(2)/CdS/ZnS/SiO₂ photoelectrode. This was due to the co-absorption of incident light by low-bandgap PbS nanocrystalline film and also the CdS QDs layer and well transport of the charge carriers. For the CdSe included QDSCs, the PbS-free reference cell represented a PCE of 4.1%. This efficiency was improved to 5.1% for the optimized cell with TiO₂/PbS(2)/CdS/CdSe/ZnS/SiO₂ photoelectrode. The maximized efficiency was enhanced about 25% and 70% compared to the PbS-free reference cells with and without the CdSe QDs layer.

     

Optimization of CdSe layer on modified ZnO hierarchical spheres by spin-SILAR for efficient CdS/CdSe co-sensitized solar cells

In this study, after CdS quantum dots sensitized ZnO hierarchical spheres (ZnO HS), we used a simple process to deposit CdSe QDs on ZnO by spin-coating-based SILAR, and applied to photoanodes of quantum dots-sensitized solar cells. Before CdS and CdSe QDs deposition, the ZnO HS photoanodes were modified by Zn(CH₃COO)₂·2H₂O methanol solution to further enhance the open-circuit voltage and power conversion efficiency (PCE). The program of modifying photoanodes and the number of CdSe spin-SILAR cycles are evaluated on the optical and electrochemical properties of the cells. As a result, a high energy conversion efficiency of 2.49 % was obtained by using modified ZnO HS/CdS photoanode under AM 1.5 illumination of 100 mW cm^?2. And further decorated by the CdSe QDs, the ZnO HS/CdS/CdSe cell achieved a PCE of 5.36 % due to the modification of ZnO HS nanostructure, the enhanced absorption in the visible region, the lower recombination reaction and higher electron lifetime.     

Growth of ZnO nanowires on fibers for one-dimensional flexible quantum dot-sensitized solar cells

One-dimensional flexible solar cells were fabricated through vertical growth of ZnO nanowires on freestanding carbon fibers and subsequent deposition of CdS quantum dots (QDs). Under light illumination, excitons were generated in the CdS QDs and dissociated in the ZnO/CdS interface. Photoelectrochemical characterization indicates that fiber quantum dot-sensitized solar cells (QDSCs) could effectively absorb visible light and convert it to electric energy. The photoelectrochemical performance was enhanced after the deposition of a ZnS passivating layer on the CF/ZnO/CdS surface. The highest conversion efficiency of about 0.006% was achieved by the fiber QDSCs. A higher conversion efficiency was expected to be achieved after some important parameters and cell structure were optimized and improved.     

CdS-sensitized ZnO nanorod arrays coated with TiO2 layer for visible light photoelectrocatalysis

A novel ZnO/CdS/TiO₂ nanorod array composite structure was fabricated by depositing CdS-sensitized layer onto ZnO nanorod arrays via chemical bathing deposition and subsequently coated by TiO₂ protection layer via a vacuum dip-coating process. The films were characterized by x-ray diffraction, field emission scanning electron microscopy, energy dispersive spectrum, and UV–Vis diffuse reflectance spectroscopy. For the films severed as the photoanodes, linear sweep voltammetry and transient photocurrent (i _ph) were investigated in a three-electrode system. The photoelectrocatalytic activity was evaluated by the degradation of methylene blue (MB) under visible light irradiation. The results show that the oriented ZnO nanorods are adhered by relatively uniform CdS-sensitized layer and coated with TiO₂ layer. Both the coated and uncoated CdS-sensitized ZnO nanorod arrays exhibit the visible light response and the photoelectrocatalytic activity on the degradation of MB under visible light irradiation. The ZnO/CdS/TiO₂ nanorod array film possesses stable and superior photoelectrocatalytic performance owing to the TiO₂ thin layer protecting the CdS from photocorrosion.     

Improved conversion efficiency of CdS quantum dots-sensitized TiO2 nanotube array using ZnO energy barrier layer

We report that the use of a chemically deposited ZnO energy barrier between a CdS quantum dot sensitizer and TiO(2) nanotubes (TNTs) can improve the efficiency of quantum dots-sensitized solar cells (QDSCs). The experimental results show that the formation of the ZnO layers over TNTs significantly improved the performances of the CdS QDSCs based on the TNTs electrodes. In particular, a maximum photoconversion efficiency of 4.6% was achieved for the CdS/ZnO/TNTs electrode under UV-visible light illumination, corresponding to an increase of 43.7% as compared to the CdS/TNTs electrode without the ZnO layers. The improved CdS QDSCs efficiency is attributed to the suppressed recombination of photoinjected electrons with redox ions from the electrolyte resulting from the ZnO energy barrier layers.     

Periodic FTO IOs/CdS NRs/CdSe Clusters with Superior Light Scattering Ability for Improved Photoelectrochemical Performance

Periodic fluorine‐doped tin oxide inverse opals (FTO IOs) grafted with CdS nanorods (NRs) and CdSe clusters are reported for improved photoelectrochemical (PEC) performance. This hierarchical photoanode is fabricated by a combination of dip‐coating, hydrothermal reaction, and chemical bath deposition. The growth of 1D CdS NRs on the periodic walls of 3D FTO IOs forms a unique 3D/1D hierarchical structure, providing a sizeable specific surface area for the loading of CdSe clusters. Significantly, the periodic FTO IOs enable uniform light scattering while the abundant surrounded CdS NRs induce additional random light scattering, combining to give multiple light scattering within the complete hierarchical structure, significantly improving light‐harvesting of CdS NRs and CdSe clusters. The high electron collection ability of FTO IOs and the CdS/CdSe heterojunction formation also contribute to the enhanced charge transport and separation. Due to the incorporation of these enhancement strategies in one hierarchical structure, FTO IOs/CdS NRs/CdSe clusters present an improved PEC performance. The photocurrent density of FTO IOs/CdS NRs/CdSe clusters at 1.23 V versus reversible hydrogen electrode reaches 9.2 mA cm^?2, which is 1.43 times greater than that of CdS NRs/CdSe clusters and 3.83 times of CdS NRs.     

ZnO/CdS/Ag复合光催化剂的制备及其催化和抗菌性能

先用水热反应合成六方晶相CdS多层级花状微球并在其表面生长ZnO纳米棒形成均匀的ZnO/CdS复合结构,然后用光还原法将Ag纳米颗粒负载于ZnO纳米棒制备出ZnO/CdS/Ag三元半导体光催化剂,对其进行扫描电镜和透射电镜观察、光电性能测试、活性基团捕获实验以及光催化降解和抗菌性能测试,研究其对亚甲基蓝(MB)的降解和抗菌性能。结果表明：ZnO纳米棒均匀生长在CdS微球表面,CdS晶体没有明显裸露,Ag纳米粒子负载在ZnO纳米棒的表面;ZnO/CdS/Ag三元复合光催化剂有良好的可见光响应、较低的阻抗和较高的光电流密度;ZnO/CdS/Ag复合光催化剂能同时产生羟基和超氧自由基等活性氧基团;ZnO/CdS/Ag三元复合光催化剂对亚甲基蓝(MB)的30 min降解率高于90%;0.25 mg/mL的ZnO/CdS/Ag对革兰氏阴性菌(大肠杆菌)的灭菌率高于96%,对革兰氏阳性菌(金黄色葡萄球菌)能完全灭除。     

Influence of sodium compounds at the Cu(In,Ga)Se2/(PVD)In2S3 interface on solar cell properties

The present contribution deals with indium sulfide buffer layers grown by thermal co-evaporation of elemental indium and sulfur. It has been found necessary to deposit these buffer layers at low substrate temperatures in order to reach V_oc values similar to those with (CBD)CdS. However, such deposition conditions lead to the formation of a highly recombinative Cu(In,Ga)Se₂/indium sulfide interface. This behaviour may be associated to the presence of sodium carbonates/oxides at the interface even though the Cu(In,Ga)Se₂ surface was cleaned in NH₃ (1 M, room temperature) prior to the indium sulfide deposition. An explanation is that, despite the chemical etch, sodium carbonates/oxides remain in the air exposed Cu(In,Ga)Se₂ grain boundaries and can migrate towards the surface when the Cu(In,Ga)Se₂ is heated under vacuum. These polluted interface areas act as recombination zones and thus inferior devices. A possibility to improve the device performance (i.e. improve the interface quality) is to sulfurize the remaining sodium carbonates/oxides. The resulting Na₂S can then leave the interface by formation of a solid solution with the indium sulfide. By adapting the buffer layer deposition process, 13.3% efficiency devices with co-evaporated indium sulfide are realized, performance which is close to that reached with (CBD)CdS.     

TiO2 inverse opal based CdS/CdSe quantum dot co-sensitized solar cells

CdS and CdSe quantum dots were introduced as co-sensitizers into TiO₂ inverse opal quantum dot sensitized solar cells. Herein, the three-dimensionally ordered porous TiO₂ inverse opal film leads to a better infiltration of both sensitizers and hole transporting material, and the smaller surface area of TiO₂ inverse opal film is effectively offset by the incorporating of co-sensitization. It was found that the presence of CdS/CdSe co-sensitizers provides enhanced light absorption, and leads to a lower recombination rate of the electrons due to the stepwise structure of band edge in TiO₂/CdS/CdSe, which resulted in the observed enhanced photocurrent and energy conversion efficiency of the solar cells. A cell efficiency of 1.01 % has been attained.     

Enhancement of gas sensing properties of CdS nanowire/ZnO nanosphere composite materials at room temperature by visible-light activation

CdS nanowire/ZnO nanosphere materials (CdS/ZnO) with hierarchical structure were synthesized by a three-step solvothermal process. XRD, FESEM and TEM analysis confirmed the growth of ZnO nanospheres on the surface of CdS nanowires (NWs). The transient photovoltage (TPV) measurements revealed that the interface between CdS and ZnO can inhibit the recombination of photogenerated excess carriers and prolong the lifetime of excess carriers in CdS/ZnO materials. Moreover, the CdS/ZnO materials exhibit a dramatic improvement in optoelectronic performance and visible-light-irradiation gas sensing activity, which gave 1 order of magnitude larger than that of CdS NWs in response to formaldehyde. The enhancement of sensing properties is attributed to the interfacial transport of excess carriers.     

Ferric oxide and ZnFe2O4 nanotubes derived from nano ZnO/FeOx core/shell structures

The ZnO/FeO_x core/shell nanorods were prepared with ZnO nanorods as templates, on which ferric oxide was deposited by thermal decomposition of Fe(acac)₃ in solution. The thickness of the ferric oxide shell could be precisely controlled by the concentration of Fe(acac)₃. The amorphous ferric oxide nanotubes were fabricated by wet-etching the ZnO core nanorods in HAc solution and polycrystalline ZnFe₂O₄ nanotubes were prepared by annealing the core/shell ZnO/FeO_x nanocomposites in air. The obtained ZnFe₂O₄ nanotubes showed paramagnetism at room temperature.     

Novel construction of CdS-encapsulated TiO2 nano test tubes corked with ZnO nanorods

A novel TiO₂ nanotube array/CdS nanoparticle/ZnO nanorod (TiO₂ NT/CdS/ZnO NR) photocatalyst was constructed by chemical assembling CdS into the TiO₂ NTs, and then laying ZnO NRs on the surface. The SEM results showed that the TiO₂ NTs looked like many “nano test tubes” and the ZnO NRs served as the corks to seal the nozzle. This photocatalyst exhibited a wide absorption range (200-535 nm) in both ultraviolet and visible regions (UV-vis region), and maintained very high photoelectrocatalytic (PEC) activities. The maximum photoelectric conversion efficiencies (η) of TiO₂ NT/CdS/ZnO NRs are 31.8 and 5.98% under UV light (365 nm) and visible light (420-800 nm), respectively.     

Enhanced photovoltaic performance of solar cell based on front-side illuminated CdSe/CdS double-sensitized TiO2 nanotube arrays electrode

Free-standing TiO₂ nanotube (NT) arrays have been prepared by a two-step anodization method. These translucent TiO₂ NT arrays can be transferred to the fluorine-doped tin oxide glass substrates to form front-side illuminated TiO₂ NT electrodes. The TiO₂ NT electrodes were double-sensitized by CdSe/CdS quantum dots (QDs) through successive ionic layer adsorption and reaction (SILAR) process. The absorption range of the TiO₂ NT electrode was extended from ~380 to 700 nm after sensitization with CdSe/CdS QDs. The SILAR cycles were investigated to find out the best combination of CdS and CdSe QDs for photovoltaic performance. The power conversion efficiency of 2.42 % was achieved by the CdSe(10)/CdS(8)/TiO₂ NT solar cell. A further improved efficiency of 2.57 % was obtained with two cycles of ZnS overlayer on the CdSe(10)/CdS(8)/TiO₂ NT electrode, which is 45.19 % higher than that of back-side illuminated solar cell. Furthermore, the ZnS(2)/CdSe(10)/CdS(8)/TiO₂ NT solar cell possesses a higher stability than CdSe(10)/CdS(8)/TiO₂ NT solar cell during the same period. The better photovoltaic performance of the ZnS(2)/CdSe(10)/CdS(8)/TiO₂ NT solar cell has demonstrated the promising value to design quantum dots-sensitized solar cells with double-sensitized front-side illuminated TiO₂ NT arrays strategy.     

ZnO nanorod/CdS nanocrystal core/shell-type heterostructures for solar cell applications

ZnO/CdS core/shell nanorod arrays were fabricated by a two-step method. Single-crystalline ZnO nanorod arrays were first electrochemically grown on SnO(2):F (FTO) glass substrates. Then, CdS nanocrystals were deposited onto the ZnO nanorods, using the successive ion layer adsorption and reaction (SILAR) technique, to form core/shell nanocable architectures. Structural, morphological and optical properties of the nanorod heterojunctions were investigated. The results indicate that CdS single-crystalline domains with a mean diameter of about 7 nm are uniformly and conformally covered on the surface of the single-crystalline ZnO nanorods. ZnO absorption with a bandgap energy value of 3.30 ± 0.02 eV is present in all optical transmittance spectra. Another absorption edge close to 500 nm corresponding to CdS with bandgap energy values between 2.43 and 2.59 eV is observed. The dispersion in this value may originate in quantum confinement inside the nanocrystalline material. The appearance of both edges corresponds with the separation of ZnO and CdS phases and reveals the absorption increase due to CdS sensitizer. The photovoltaic performance of the resulting ZnO/CdS core/shell nanorod arrays has been investigated as solar cell photoanodes in a photoelectrochemical cell under white illumination. In comparison with bare ZnO nanorod arrays, a 13-fold enhancement in photoactivity was observed using the ZnO/CdS coaxial heterostructures.     

Synthesis of CdS nanorods by reacting CdCl2 nanorods with H2S at room temperature

We report the synthesis of CdS nanorods by reacting CdCl₂ nanorods with H₂S at room temperature. The preparation method was based on CdCl₂ nanorods employed as chemical template. The length and the diameter of the obtained CdS nanorods are about tens micron and 120−300 nm, respectively. The phase and the crystallographic structure of the products were characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The composition of the products was investigated by X-ray photoelectron spectroscopy (XPS).     

Effects of CdCl2 treatment and annealing on CdS/SnO2/glass heterostructures for solar cells

Effects of CdCl₂ post-growth treatments and annealing under different conditions on the surface and interface properties of CdS/SnO₂/glass heterostructure were studied. CdS thin films were grown on SnO₂-coated glass substrates for CdS/CdTe heterojunction solar cells by the solution growth technique. It was found that CdCl₂ post-growth treatments and annealing enhanced the CdS-related XRD peaks, narrowed the CdS characteristic Raman bands, removed or depressed the disorder related Raman features, and improved the CdS film crystalline quality significantly, which are advantageous to the application in solar cells as a window layer material.     

Synthesis of size-tunable ZnO nanorod arrays from NH3·H2O/ZnNO3 solutions

Well-aligned crystalline ZnO nanorod arrays were fabricated via an aqueous solution route with zinc nitrate and ammonia as precursors. Dip-coating was firstly utilized to form a ZnO film on ITO substrate as a seed layer for subsequent growth of ZnO nanorods. The effects of NH₃·H₂O/ZnNO₃ molar ratio, ZnNO₃ concentration, growth temperature and time on nanorod morphology were respectively investigated. It was found that the size of nanorod is mainly determined by the molar ratio and concentration. XRD demonstrates that ZnO nanorods are wurtzite crystal structures preferentially orienting in the direction of the c-axis. SEM confirms that ZnO nanorods grew up perpendicular to the substrate. The diameter and length were tunable in a broad range from 80 nm to 500 nm and 250 nm up to 8 μm, respectively. The aspect ratio changed from 3 to 17 mainly dependent on composition of the aqueous solution.     

Aqueous synthesis of CdSe and CdSe/CdS quantum dots with controllable introduction of Se and S sources

A new and convenient route is developed to synthesize CdSe and core–shell CdSe/CdS quantum dots (QDs) in aqueous solution. CdSe QDs are prepared by introducing H₂Se gas into the aqueous medium containing Cd²⁺ ions. The synthesized CdSe QDs are further capped with CdS to form core–shell CdSe/CdS QDs by reacting with H₂S gas. The gaseous precursors, H₂Se and H₂S, are generated on-line by reducing SeO₃ ^2? with NaBH₄ and the reaction between Na₂S and H₂SO₄, and introduced sequentially into the solution to form CdSe and CdSe/CdS QDs, respectively. The synthesized water-soluble CdSe and CdSe/CdS QDs possess high quantum yield (3 and 20 %) and narrow full-width-at-half-maximum (43 and 38 nm). The synthesis process is easily reproducible with simple apparatus and low-toxic chemicals. The relatively standard deviation of maxima fluorescence intensity is only 2.1 % (n = 7) for CdSe and 3.6 % (n = 7) for CdSe/CdS QDs. This developed route is simple, environmentally friendly and can be readily extended to the large-scale aqueous synthesis of QDs.     

A ZnO nanorod based layered ZnO/64° YX LiNbO3 SAW hydrogen gas sensor

A zinc oxide (ZnO) nanorod based surface acoustic wave (SAW) sensor has been developed and investigated towards hydrogen (H₂) gas. The ZnO nanorods were deposited onto a layered ZnO/64° YX LiNbO₃ substrate using a liquid solution method. Micro-characterization results revealed that the diameters of ZnO nanorods are around 100 and 40 nm on LiNbO₃ and Au (metallization for electrodes), respectively. The sensor was exposed to different concentrations of H₂ in synthetic air at operating temperatures between 200 °C and 300 °C. The study showed that the sensor responded with highest frequency shift at 265 °C. At this temperature, stable baseline and fast response and recovery were observed.     

Characterization and humidity sensing of ZnO/42° YX LiTaO3 Love wave devices with ZnO nanorods

Love mode surface acoustic wave devices based on ZnO/42° YX LiTaO₃ were characterized with the thickness of the sputtered ZnO guiding layer varied from 250 nm to 1.18 μm. Phase velocity, temperature coefficient of resonant frequency, sensitivity, electromechanical coupling coefficient and humidity sensing of the Love mode SAW devices were studied as a function of the ZnO layer thickness. With increasing ZnO thickness over the range of thickness values we have examined, the sensitivity of 42° YX LiTaO₃ to liquid loading increased and the values of electromechanical coupling coefficient decreased. The device with a thickness of 250 nm showed the best humidity response. ZnO nanorods were grown on this device and its humidity sensing performance has been further improved due to their large surface-to-volume ratio of the ZnO nanorods.