溶胶—凝胶法制备的Al_2O_3感温膜及其性质

用溶胶—凝胶方法，采用电泳工艺在Ａｌ基片上制成Ａｌ２Ｏ３薄膜．膜物质主要是非晶态，但含有少量微晶．随着热处理温度的升高，进晶含量增加，这种湿敏膜在中，高湿区有良好的感湿性能．     

溅射Ni3Al微晶涂层的抗氧化性能

研究了铸态Ｎｉ３Ａｌ合金及其微晶溅射涂层在１０００－１１００℃下等温氧化性能及１０００℃下的循环氧化性能，结果表明：铸态Ｎｉ３Ａｌ合金在氧化过程中形成Ａｌ２Ｏ３，ＮｉＯ和ＮｉＡｌ２Ｏ４的复杂氧化膜，微晶Ｎｉ３Ａｌ涂层在氧化过程中形成α－Ａｌ２Ｏ３和ＮｉＡｌ２Ｏ４尖晶石，不含ＮｉＯ，这种氧化膜的保护作用比含ＮｉＯ的氧化膜的保护作用好，使得其氧化增重比铸态合金小约１半，此外铸态Ｎｉ３Ａｌ合金在氧化过程     

反应溅射Al2O3膜对TiAl抗高温氧化性能的影响

研究了反应溅射Ａｌ２Ｏ３膜对ＴｉＡｌ抗高温氧化性能的影响。结果表明，在８００和９００℃，Ａｌ２Ｏ３膜大大提高ＴｉＡｌ的抗性能。     

磁控溅射铝膜的退火对膜组织结构转变的影响

利用ＳＥＭ、ＴＥＭ以及ｘ射线衍射，研究了磁控溅射Ａｌ膜的退火对膜组织 结构转变的影响。Ａｌ膜被磁控溅射在Ｎｉ基体上，所得镀膜分别经 １００℃、２００℃、 ３００℃、４００℃、５００℃、５５０℃和 ６００℃真空退火。结果表明， １００℃开始 Ａｌ膜再结晶； ４００℃开始有Ａｌ－Ｎｉ金属间化合物相生成，随温度升高，金属间化合物相的形成顺序为 Ａｌ３Ｎｉ—Ａｌ３Ｎｉ２－Ｎｉ３Ａｌ ＡｌＮｉ。薄膜的组织也由开始的细颗粒状组织转变为多边形 晶粒组织。     

SiC纤维补强微晶玻璃基复合材料的界面结合

本文通过ＳｉＣ纤维对ＬＣＡＳ（Ｌｉ２Ｏ－ＣａＯ－Ａｌ２Ｏ３－ＳｉＯ２）和ＭＡＳ（ＭｇＯ－Ａｌ２Ｏ３－ＳｉＯ２）微晶玻璃的补强，观察和分析了在不同复合系统中纤维与基体的界面结合。在ＳｉＣ纤维／ＬＣＡＳ微晶玻璃复合系统中，发现纤维与基体之间有一中间界面层，它主要是在复合材料的烧结过程中通过扩散形成，并且于１２００℃时在界面上形成富Ｃ层。ＳｉＣ纤维／ＭＡＳ微晶玻璃基复合材料由于在烧结过程中有化学反应发生     

Ni3Al金属间化合物及溅射CoCrAlY涂层的高温热腐蚀

研究了Ｎｉ３Ａｌ金属间化合物及溅射ＣｏＣｒＡｌＹ涂层在９００～９５０℃空气中，表面存在（Ｎａ，Ｋ）２ＳＯ４盐膜时的热腐蚀行为，结果表明，Ｎｉ３Ａｌ遭受严重的热腐蚀，溅射ＣｏＣｒＡｌＹ涂层可以通过在表面迅速形成保护性Ａｌ，Ｃｒ氧化膜而显著改善Ｎｉ３Ａｌ的耐热腐蚀性能。     

AlOOH对Al2O3直接凝固注模成型坯体强度等性能影响

为了改善直接注模成型（ＤＣＣ）氧化铝的坯体性能，在Ａｌ２Ｏ３－ＤＣＣ过程中加入ＡｌＯＯＨ本文详细研究了Ａｌ２Ｏ３＋ＡｌＯＯＨ体系的湿坯性能，干燥行为及烧结致密化过程，结果表明，少量ＡｌＯＯＨ加入可显著提高Ａｌ２Ｏ３的湿坯抗压强度和弹性模量，当ＡｌＯＯＨ体积含量〈３．０％时对干燥过程没有影响，干燥坯体经无压烧结后可获得烧结密度达３．９７ｇ／ｃｍ＾３（９９．７％ＴＤ）。显微结构均匀的α－Ａｌ２Ｏ３相。     

磁记忆存储器微晶玻璃基板

介绍了适用于高容量，小型化磁记录存储器基板的各种微晶玻璃材料，详细讨论了微晶玻璃的化学组成，显微结构，主晶相种类以及微晶玻璃的物化性能和表面特性，并与ＮｉＰ／Ａｌ基板材料性能进行了对比，简要介绍了硬盘微晶玻璃基板的实用性研究结果。     

Al—Al2O3粉末成形体烧结性的研究

分析研究了金属Ａｌ在１０００℃左右温度下的存在状态以及Ａｌ２Ｏ３上浸润性问题，讨论了Ａｌ－Ａｌ２Ｏ３两相末成形的烧结性能及助烧剂，烧结气氛对材料烧结性能的影响。结果表明，由于金属Ａｌ的活泼性以及生成的Ａｌ２Ｏ３膜的稳定性和金属Ａｌ对Ａ２Ｏ３表面浸润性差等原因决定了Ａｌ－Ａｌ２Ｏ３粉未成形体在１０００℃时的烧结性能极差。     

CeO2对铝化物涂层高温氧化膜生长应力的影响

采用改进的双面氧化弯曲法，原位测定了９００℃下ＣｅＯ２及其含量对Ａｌ化物涂层上的氧化膜生长应力的影响，并计算出了含ＣｅＯ２的复合涂层与两种简单渗Ａｌ涂层的生长力差值。实验表明：涂层中添加ＣｅＯ２可细化Ａｌ２Ｏ３膜的晶粒，增加了氧化膜的塑性，使复合涂层在９００℃氧化４５ｈ后的氧化膜内的生长应力同ＮｉＡｌ涂层和Ｍ３８Ｇ合金渗Ａｌ层相比分别降低了约２０００ＭＰａ和５００ＭＰａ。此外，试样在升温过程中的…     

Characterization of Mo-Al-N nanocrystalline films synthesized by reactive magnetron sputtering

Mo-Al-N films were deposited by a dc reactive magnetron sputtering technique. The effects of N₂ partial pressure, substrate temperature, and aluminum content on the phase composition, microstructure, hardness and oxidation resistance of the films were studied. The MoAlN films as prepared are fcc Mo₂N structure where partial Mo sites were substituted by Al, and the grain size of the crystallites increased from 8 to 30 nm when the Al concentration was increased from 6% to 33%. In the Mo_0.94Al_0.06N film, the hardness can reach 29 GPa, which is much higher than that in binary Mo-N systems. The oxidation resistance temperature of Mo-Al-N film with an Al content of 6% was higher than that of Mo-N films, and with further addition of Al content, the oxidation resistance temperature increased slightly.     

High temperature metal-induced crystallization of r.f. sputtered amorphous Si thin films

R.f. sputter-deposited amorphous Si (a-Si) films have been found to exhibit an interconnected fine structure of low and high density regions. The porosity decreases as the film thickness increases in agreement with results for evaporated a-Ge previously published by Donovan. At an annealing temperature of 800°C, a-Si films crystallize by the relatively slow diffusionless growth of crystallites nucleated within the a-Si matrix. Similar a-Si films containing a buried layer 30 Å thick of Al in an a-Si/Al/a-Si structure exhibited greatly enhanced nucleation and crystallization rates. Crystallite growth in these films occurred by two separate mechanisms both involving the precipitation of crystalline Si from an Al + Si liquid region. The first growth mechanism was observed during the early stages of crystalline formation in which crystalline islands grew around isolated liquid regions. Later, Al + Si liquid boundary layers were established between crystalline Si and a-Si regions, and further crystallization occurred by the motion of this boundary layer.     

Deposition and structural characterization of poly-Si thin films on Al-coated glass substrates using hot-wire chemical vapor deposition

The growth of polycrystalline Si films onto Al-coated Corning 7059 glass substrates using hot-wire chemical vapor deposition (HW-CVD) was investigated. The crystalline fraction, grain structure and average grain size of the films were compared as a function of the growth rate and the Si/Al thickness ratio. Micrometre-size Si grains were achieved with a Si/Al ratio of 2 and Si thickness of 2 μm at a growth rate of 1 μm h⁻¹. It was found that the films had a bimodal grain size distribution, which included nanocrystalline Si, and that the growth of micrometre-size crystallites does not continue as the thickness of Si film increases. At a growth rate of 5 μm h⁻¹, films are similar to those grown on glass with an average grain size less than 60 nm and crystalline fraction of 75%.     

Effect of Al concentrations on the electrodeposition and properties of transparent Al-doped ZnO thin films

Al-doped zinc oxide (AZO) thin films are prepared on polycrystalline fluorine-doped tin oxide-coated conducting glass substrates from nitrates baths by the electrodeposition process at 70 °C. The electrochemical, morphological, structural and optical properties of the AZO thin films were investigated in terms of different Al concentration in the starting solution. It was found that the carrier density of AZO thin films varied between ?3.11 and ?5.56 × 10²⁰ cm^?3 when the Al concentration was between 0 and 5 at.%. Atomic force microscopy images reveal that the concentration of Al has a very significant influence on the surface morphology and roughness of thin AZO. X-ray diffraction spectra demonstrate preferential (002) crystallographic orientation having c-axis perpendicular to the surface of the substrate and average crystallites size of the films was about 33–54 nm. With increasing Al doping, AZO films have a strong improved crystalline quality. As compared to pure ZnO, Al-doped ZnO exhibited lower crystallinity and there is a shift in the (002) diffraction peak to higher angles. Due to the doping of Al of any concentration, the films were found to be showing >80 % transparency. As Al concentration increased the optical band gap was also found to be increase from 3.22 to 3.47 eV. The room-temperature photoluminescence spectra indicated that the introduction of Al can improve the intensity of ultraviolet (UV) emission, thus suggesting its greater prospects in UV optoelectronic devices. A detailed comparison and apprehension of electrochemical, optical and structural properties of ZnO and ZnO:Al thin films is done for the determination of optimum concentration of Al doping.     

Application of Al and Pt nanofilm systems produced by magnetron sputtering for modification of catalytic properties of alumina obtained on ferritic foil

In the process of producing the catalytic systems using the method for oxidation of ferritic foil with a deposited film of catalytic elements, it is important to select the film thickness providing the best activity of the catalytic system. If the film is deposited prior to the process of oxidation, it is expected that during the growth of oxide crystallites, the film will be broken and the maximum dispersion of catalytic elements will be obtained. If the film is formed of aluminium-active elements, it is expected that the oxide hybrid systems with higher activity of catalytic sites will be produced. Experimental investigations presented in this paper were focused on measuring the thickness of Al and Pt nanofilms and (Pt + Al) composites by the X-ray Reflectivity method, produced by the PVD method, and the morphology of oxide films obtained at various periods of oxidation. The catalytic activity of alumina films coated with Al, Pt nanofilms, Pt/Al and Al/Pt laminates and (Pt + Al) composites was compared, and it was found that the systems with Pt films and Pt/Al laminates revealed the highest activity of basic sites.     

Growth and physicochemical characterization of CuAlTe2 films obtained by reaction, induced by annealing, between Cu/Al/Te/Al/Cu... Al/Cu/Al/Te layers sequentially deposited

CuAlTe₂ thin films have been synthesized by annealing under an argon flow a multilayer structure of thin Cu, Al and Te layers sequentially deposited by evaporation under vacuum. The films have been characterized by X-ray diffraction, microprobe analysis, photoelectron spectroscopy and Raman scattering. At the end of the process, the XRD spectra demonstrate that textured CuAlTe₂ films have been obtained with preferential orientation of the crystallites along the (112) direction. The Raman patterns are in good accordance with the reference. The XPS spectra show that the binding energies of the elements are in good agreement with bonds of CuAlTe₂. Even after a decrease of the oxygen contamination by improvement of the depositing process the oxygen present in the films is found to be about 12 at %. This revised version was published online in September 2006 with corrections to the Cover Date.     

Sol-gel derived zinc oxide films alloyed with cobalt and aluminium

ZnO films codoped with 5 at.% Co and 1 at.% Al were prepared by sol-gel technique on corning glass and silicon substrates with precursor sols of different pH values. The pH was varied from 5.4 to 11 by adding varying amounts of monoethanolamine to the sol. Since pH plays an important role in controlling the properties of films, we discuss in detail the effect of pH value on the structural, morphological and optical properties of the grown films. X-ray diffraction and atomic force microscopy images reveal that the size of crystallites increases with pH of the sol. The variation of pH in the reaction system influences the density of homogeneous nucleation and the crystal growth along the c-axis. High quality Co and Al codoped ZnO films annealed at 600 °C have been obtained using a sol with pH = 9. These sol-gel derived films find their suitability to be used as dilute magnetic semiconductors.     

电致变色氧化镍薄膜的注入离子及离子注入位置研究

用红外透射率分析方法研究了氧化镍薄膜在原始、致色和消化的红外透射率光谱,用Ｘ－射线衍射方法测量了在ＫＯＨ和ＬｉＣｌＯ４－ＰＣ电解液中致色和消色时,氧化镍多晶薄膜在（１１１）和（２００）方向衍射峰位的移动,分析了注入离子种类和离子注入位置,认为在ＫＯＨ电解液中致色时,注入离子为ＯＨ,离子的注入位置在晶普的间界。在ＬｉＣｌＯ４－ＰＣ电解液中,Ｌｉ＾＋离子的注入位置同样在晶粒的间界。     

Conformational morphology of polyaniline grown on self-assembled monolayer modified silicon

Polyaniline (PANI) films with pyramidal shaped crystallites were prepared by self-organization on self-assembled monolayer (SAM) modified Si substrates. High-resolution atomic force microscopy (HR-AFM) shows that SAM has tridymite structural order and the PANI film has biphasic conformational morphology corresponding to face-on orientation and edge-on orientation. Order parameters obtained from power spectral density analysis of HR-AFM images of SAM and PANI films show that the pyramidal crystallites are in emeraldine salt (ES-I) form and the region between the crystallites is in emeraldine base (EB-II) form. The ordered lattice of PANI crystallites as observed by cross-sectional HR-TEM confirms its single crystalline nature as well as epitaxial growth. The heteroepitaxial growth of PANI is attributed to the structural order of interfacial SAM on Si.