半导体微腔激光器瞬态响应及调制特性分析

针对半导体微腔激光器的结构特点,考虑到腔量子电动力学中自发辐射增强效应,采用传统速率方程的表示形式,建立了微腔激光器的速率方程,着重讨论了微腔激光器的瞬态响应及调制特性,给出了其动态特性的仿真结果,分析了自发辐射因子、注入电流和腔长对微腔激光器的激射阈值、延迟时间、驰豫振荡频率和光输出等参量的影响,从而为改善微腔激光器的高频调制特性和优化器件结构提供了理论依据。     

半导体微腔激光器中的自发辐射耦合增强效应

针对半导体微腔激光器的结构特点,以及腔量子电动力学中自发辐射增强效应,采用光增益与载流子密度的对数关系,引入增益饱和项和非辐射复合项的贡献,指出即便是对于理想的封闭微腔,由于非辐射衰减速率的影响,光输出并不随泵浦线性变化。结合频谱和相图分析,给出了自发辐射耦合因子与微腔激光器的辐射阈值、开关延迟时间、驰豫振荡频率和光输出等参量关系的仿真结果,这对于微腔激光器的理论研究和优化器件结构有所裨益。     

半导体微腔激光器

文章简要叙述了微腔激光器的基本工作原理。采用先进的ＬＰＥ及反应离子刻蚀等微细加工技术制作了盘型－ 图钉式微腔结构,测得其有源区的光荧光谱的半宽度为０ ．０３２ ｅＶ,波长为８１５ ．３３ ｎｍ 。     

DBR微腔激光器典型参数的开关调制响应及控制

以微腔激光器的典型代表垂直腔面发射半导体激光器(VCSEL)为例，选择自发辐射因子为控制参数，数值模拟了大信号深度调制情形下VCSEL的非线性动力学特性，实现了类似于边缘发射激光器的分岔，周期加倍分岔，多稳和混沌状态的稳定控制，得到分岔点位置和周期轨道与控制参数的变化关系，以及相应地调制参量和自发辐射因子的取值范围，计算结果较好地拟合了文献实验结果。     

量子点激光器瞬态响应及调制特性分析

基于二能级系统建立量子点激光器的载流子-光子速率方程模型,分析量子点激光器的瞬态响应和调制特性,获得其动态特性.同时分析了注入电流对量子点激光器输出光子密度的影响,随着注入电流的增大,激光器光电延迟时间缩短,弛豫过程缩短,弛豫振荡频率增大,且输出光子峰值和稳态功率增加,适当增加注入电流可拓宽量子点激光器调制带宽.通过小信号调制分析,发现量子点激光器上限调制频率比普通激光器高一个数量级,证明了其具有良好的高频调制特性.     

自发发射因子调制下微腔半导体激光器的抗噪声性能

在伴随信号的噪声为加性白噪声和大输入信噪比的前提下,采用小信号近似的方法,对微腔半导体激光器的自发发射因子调制进行了频域分析,得到了实际语音信号输入下不同参数下的信噪比增益.数值模拟的结果表明,如带通滤波器的通带范围取300～3400Hz,激光器的抗噪声性能随偏置电流变化出现振荡现象;当带通滤波器的通带范围增大到一定程度,调整偏置电流和腔内参数可以实现半导体激光器的高抗噪声性能.     

半导体耦合腔激光器的波长调谐与频率调制特性分析

本文将激光射器与调制器的直接耦合和耦合槽的影响综合考虑,用散射矩阵法及两步等效反射率法,对沟槽耦合腔激光器的波长调谐和频率调制特性进行了分析,数学处理简单,物理图象清晰。     

半导体激光器的微腔结构调制及其脉码在光纤中的传输

采用腔量子电动力学(QED)方法,定量讨论了平面结构微腔半导体激光器的自发发射特征物理量随腔结构的变化规律.在微腔半导体激光器自发发射因子调制、自发发射寿命调制以及一些实验依据的基础上,提出了微腔结构调制方法.数值模拟了其脉码在光纤中的传输图形.结果表明,微腔结构调制方法在提高脉码比特率方面优于同参数下的电流调制方法.     

Discontinuous modulation response of grating-assistedextended-cavity semiconductor lasers

The resonant enhancement of the small-signal intensity modulation response of a grating-assisted extended-cavity semiconductor laser is shown to occur in dual peaks centred near the harmonics of the cavity resonance fluency. Each response peak is bifurcated into two closely spaced peaks of different amplitudes and bandwidths. The position of the broader of the two peaks depends on the operating power of the laser. A strong discontinuity in the response amplitude is observed near the harmonics of the cavity resonance fluency     

Circuit models for frequency modulation response of semiconductor lasers

The authors describe a new circuit modelling technique for the directly frequency-modulated CSP semiconductor laser. In particular, this model accounts not only for the carrier density but also the temperature effects. Predictions from this model are compared with other published results of sinusoidal frequency modulation in the range DC-3 GHz and show good agreement.<>     

Direct modulation of semiconductor lasers

Methods for direct modulation of semiconductor lasers are reviewed with the objective of indicating the advantages and limitations of each method. Techniques for producing amplitude, pulse, and frequency modulation of the optical wave are included. The modulation capabilities of present pulsed lasers are analyzed with special attention given to their operation at room temperature. In addition, several ways of producing analog position or width modulation of microwave-rate optical pulses are described, and the capabilities of optical frequency modulation by acoustic waves are reviewed. A new way of obtaining mode-locked optical pulses with a semiconductor laser is also suggested.     

High-speed modulation of semiconductor lasers

An overview is given of the direct modulation performance of high-speed semiconductor lasers. The high-speed response characteristics are described using a cascaded two-port model of the laser. This model separates the electrical parasitics from the intrinsic laser and enables these subsections to be considered separately. The presentation concentrates on the small-signal intensity modulation and frequency modulation responses, and the large-signal switching transients and chirping. Device-dependent limitations on high-speed performance are explored and circuit modeling techniques are briefly reviewed.     

量子阱半导体激光器调制特性和噪声的电路模拟

给出一种量子阱半导体激光器（QWLD）小信号等效电路模型,可以作为含有QWLD系统计算机辅助设计的模型。模型包括QWLD的高速调制特性和噪声,对QWLD的调制特性和噪声进行了模拟,并对比了已发表的模拟和实验结果。     

Terahertz bandwidth prediction for amplitude modulation response ofunipolar intersubband semiconductor lasers

An analysis is performed of the direct-current (dc) amplitude modulation response of unipolar intersubband semiconductor lasers. It is shown that unipolar lasers have the potential for achieving terahertz dc modulation bandwidths     

具有梯形衬底结构半导体激光器的稳态特性分析

本文导出了梯形衬底半导体激光器的侧向扩展电流分布并提出了一种新的分析梯形衬底激光器稳态特性的模型。根据这一模型对梯形衬底双异质结结构和大光腔结构进行了分析和比较。分析结果和文献报道的实验结果很好地符合。     

载流子寿命对半导体激光器调制特性的影响

针对通常用来研究半导体激光器调制特性的速率方程中所采用的载流子寿命不变近似所存在的问题，重新对小信号调制下半导体激光器的速率方程组进行了线性化处理。