机械诱发自蔓延反应合成Ti3AlC2的机理研究

以3Ti／Al／2C粉体为原料,采用机械合金化的方法以合成Ti3AlC2材料。研究结果表明,在机械合金化过程中诱发自蔓延反应,反应会产生大量坚硬的小块体颗粒,大小约为0．2-11mm。粉体的组成相为TiC、Ti3AlC2、Ti2AlC,而块体仅含有TiC和Ti3AlC2。获得的粉体和块体产物中Ti3AlC2含量分别约为63wt％和84．8wt％。提出了一个机械诱发自蔓延反应合成Ti3AlC2的反应机制,即Ti3AlC2是从固相TiC与Ti-Al液相中形核并长大。     

热压TiAl/Ti2AlC复合材料的相形成规律

采取原位热压方法，利用Ti、Al、TiC为原料合成了TiAl／Ti2AlC复合材料。通过X衍射图谱，分析了从600℃到1300℃该合成过程的相形成规律。Ti、Al、TiC的反应大致可分为2个阶段：900℃之前，Ti和Al反应生成TiAl金属化合物；900℃之后，TiAl金属间化合物和TiC反应并合成致密TiAl／Ti：AlC复合材料。讨论了这2个阶段的反应机及烧结产物的微观结构特点。     

三元层状Ti_3AlC_2材料的制备及力学性能分析

分别以石墨和TiC为碳源,以微米级Ti粉、Al粉为原料,采用固-液相原位热压烧结方法制备了不同反应物合成的致密层状Ti3AlC2陶瓷材料.采用XRD、SEM分析了产物的形貌和相组成,并对其力学性能进行了分析测试.研究表明:在1 300℃、25 MPa条件下,以TiC/Al/Ti混合粉末体系为原料,热压烧结可以获得纯度较高的致密Ti3AlC2层状陶瓷材料;Ti3AlC2陶瓷材料的断裂韧度KIC为5.60 MPa.m1/2,维氏硬度在HV 400～600之间,抗弯强度为454.7 MPa,抗压强度可达764 MPa.研究表明,晶粒细化是其力学性能提高的主要原因.     

Preparation of TiAl/Ti2AlC Composites with Ti/Al/C Powders by In-situ Hot Pressing

TiAl/Ti2AlC composites were prepared by in-situ hot pressing of TilAl/C powders mixtures and sintered at different temperatures were investigated by X- ray diffraction （ XRD ） of samples. The reaction procedure of Ti-Al-C system could be divided into three stnges. Below 900℃ , Ti reacts with Al to form TiAl intermetallics ; above 900 ℃ , C reacts with remain Ti to form TiC triggered by the exothermal reaction of Ti and Al ; TiAl reacts with TiC to produce dense TiAl/Ti2AlC compasites.In the holding stage, ternary Ti2AlC develops to layered polycrystal and composites pyknosis in the meanwhile. The mechanism of synthesis and microstructure was especially discussed.     

Eleetronie Structures and Bonding Properties of Ti2AlC and Ti3AlC2

The relation among electronic structure, chemical bond and property of Ti2AlC, Ti3AlC2 and doping Si into Ti2AlC was studied by density function and the discrete variation （DFT-DVM） method. After adding Si into Ti2AlC, the interaction between Si and Ti is weaker than that between Al and Ti, and the strengths of ionic and covalent bonds decrease both. The ionic and covalent bonds in Ti3AlC2, especially in Ti-Al, are stronger than those in Ti2AlC. Therefore, in synthesis of Ti2AlC, the addition of Si enhances the Ti3AlC2 content instead of Ti2AlC. The density of state （DOS） shows that there is mixed conductor characteristic in Ti2AlC and Ti3AlC2. The DOS of Ti3AlC2 is much like that of Ti2AlC. Ti2SiAl1-xC has more obvious tendency to form a semiconductor than Ti2AlC, which is seen from the obvious difference of partial DOS between Si and Al 3/7.     

Fabrication of High-purity Ternary Carbide Ti3AlC2 by Spark Plasma Sintering （SPS） Technique

The effect of silicon on synthesis of Ti3AlC2 by spark plasma sintering （SPS） from TiC/Ti/Al powders was investigated. X-ray diffraction （XRD） and scanning electron microscope （SEM） were used for phase identification and microstructure evaluation. The results show that addition of silicon can considerably accelerate the synthesis reaction of Ti3AlC2 and fully dense, essentially single-phase （purity 〉98%） polycrystalline Ti3AlC2 could be successfully obtained by sintering 2TiC/lTi/lAl/0.2Si powders at 1 200- 1 250 ℃ under a pressure of 30 MPa. SEM photographs show that the obtained Ti3AlC2 samples from mixtures powders are in plane-shape with a size of about 2-5 μm and 10-25 μm in the thickness dimension and elongated dimension, respectively.     

可加工Ti2AlC陶瓷的研究进展

综述了可加工性Ti2AlC陶瓷的研究进展，三元碳化物Ti2AlC属于六方晶体结构，空间群为P63／mmc。它具有许多优良的性能，有较高的强度和弹性模量，在室浊下有抗损伤能力，它还有高的导热和导电系数，在高温下有良好的抗氧化性及显著的塑性变形。应用SHS、HP／HIP及SPS（等离子放电烧结）可制备该化合物。用HIP及SPS可制备高纯、致贩Ti2AlC陶瓷。     

黏结剂对Cr_2AlC陶瓷基复合材料组织和性能的影响

以熔盐法自制Cr2AlC粉末为原料,加入质量分数为5%的Al和质量分数10%的Cu作为黏接剂,采用真空-热压烧结技术制备Cr2AlC陶瓷基复合材料,通过SEM、OLYMPUS和HVS-100等方法研究热压工艺、黏接剂、退火工艺对Cr2AlC基陶瓷复合材料组织和性能的影响。结果表明:在Cr2AlC里加入质量分数为5%的Al,在800℃保温2min制备的Cr2AlC基陶瓷复合材料密度4.458g/cm3,硬度718.3HV,电阻率0.042Ω·m;在Cr2AlC里加入质量分数为10%的Cu,在900℃保温2min制备的Cr2AlC基陶瓷复合材料的密度5.188g/cm3,硬度1131HV,电阻率0.019Ω·m。随着烧结温度的升高,复合材料的综合性能更好。     

热压烧结Ti3SiC2材料的性能

热压烧结n(TiC)∶n(Ti)∶n(Si)∶n(Al)=2∶1∶1∶0.2的混合粉末制备了含铝Ti3SiC2材料并研究了它的力学性能、电性能、热性能和高温氧化性能。该试样的抗压强度、弯曲强度、断裂韧性和维氏硬度分别为854MPa、420MPa、5.8MPa·m1/2和3.5～5.0GPa;25℃和800℃时的电导率分别为4.3×106S/m和1.0×106S/m;热膨胀系数为9.0×10-6/K。固溶在基体中的Al改变了材料的氧化机理,氧化过程中Al的向外扩散代替了Ti的向外扩散,并在表面形成致密以αAl2O3为主要成分的氧化膜,提高了材料的抗氧化性能。     

可加工陶瓷Ti3SiC2的合成和性能

以熔盐法自制Cr₂AlC粉末为原料,加入质量分数为5%的Al和质量分数10%的Cu作为黏接剂,采用真空-热压烧结技术制备Cr₂AlC陶瓷基复合材料,通过SEM、OLYMPUS和HVS-100等方法研究热压工艺、黏接剂、退火工艺对Cr₂AlC基陶瓷复合材料组织和性能的影响。结果表明：在Cr₂AlC里加入质量分数为5%的Al,在800 ℃保温2 min制备的Cr₂AlC基陶瓷复合材料密度4.458 g/cm³,硬度718.3 HV, 电阻率0.042 Ω·m;在Cr₂AlC里加入质量分数为10%的Cu,在900 ℃保温2 min制备的Cr₂AlC基陶瓷复合材料的密度5.188 g/cm³,硬度1 131 HV,电阻率0.019 Ω·m。随着烧结温度的升高,复合材料的综合性能更好。     

Ti3SiC2/TiB2复合材料的制备及其组织和力学性能

以2TiC／Ti／Si／0．2Al／TiB2粉为原料，采用热压烧结工艺成功制备了Ti3SiC2／TiB2复合材料。结果表明：不同TiB2含量的试样中主晶相为Ti3siC2与TiB2两相，没有发现其它杂质相；当复合材料中TiB2的体积分数为10％时，其硬度、抗压强度、弯曲强度、断裂韧性都有显著的提高。经热处理后，Ti3SiC2／10％TiB2复合材料的弯曲强度由367．5MPa     

Electronic Structures and Bonding Properties of Ti_2AlC and Ti_3AlC_2

The relation among electronic structure, chemical bond and property of Ti2AlC, Ti3AlC2 and doping Si into Ti2AlC was studied by density function and the discrete variation (DFT-DVM) method. After adding Si into Ti2AlC, the interaction between Si and Ti is weaker than that between Al and Ti, and the strengths of ionic and covalent bonds decrease both. The ionic and covalent bonds in Ti3AlC2, especially in Ti-Al, are stronger than those in Ti2AlC. Therefore, in synthesis of Ti2AlC, the addition of Si enhances the Ti3AlC2 content instead of Ti2AlC. The density of state (DOS) shows that there is mixed conductor characteristic in Ti2AlC and Ti3AlC2. The DOS of Ti3AlC2 is much like that of Ti2AlC. Ti2SixAl1-xC has more obvious tendency to form a semiconductor than Ti2AlC, which is seen from the obvious difference of partial DOS between Si and Al 3p.     

Ba2 Ti9 O20/PTFE复合介电材料性能研究

为了提高微波介电材料PTFE的力学性能及尺寸热稳定性而又不恶化其优异的介电性能,引入Ba2 Ti9 O20微粉做为增强相,采用类似于粉未冶金工艺制备了不同Ba2 Ti9 O20含量的Ba2 Ti9 O20/PTFE微波基片复合材料.研究了Ba2 Ti9 O20/PTFE微波基片复合材料力学、物理及电学性能.结果表明Ba2 Ti9 O20/PTFE基片复合材料具有优异的综合性能弯曲强度16.4 MPa,弹性模量4.6 GPa,室温下吸水率0.12%,热膨胀系数在θ＜200℃时约为35×10-6/℃,介电常数与介电损耗具有良好的频率与温度稳定性.     

热压合成Ti2AlC材料及热力学分析

以Ti、Al元素粉和活性炭为原料，采用热压工艺合成了Ti2A1C块体材料。通过不同温度下合成试样的X-射线衍射分析（XRD），确定了热压合成试样的物相组成，并用扫描电子显微镜（SEM）观察了所合成试样的显微结构。结果表明：完全以元素粉为原料按2．0Ti／1．0Al／1．0C（摩尔比，下同）配比在1500℃热压60min能合成纯度高的Ti2AlC块体材料，产物中仅含有非常少的杂相TiC和Ti3AlC2。根据热力学计算结果，在Ti、Al和C三元系统中，TiC是最稳定的中间产物。另外，解释了在合成Ti2AlC过程中Ti3AlC2的产生。     

Synthesis of high pure Ti3AlC2 and Ti2AlC powders from TiH2 powders as Ti source by tube furnace

Titanium aluminum carbide (Ti₃AlC₂ and Ti₂AlC) powders were synthesized from TiH₂ powders instead of Ti powders as Ti source by a tube furnace under argon atmosphere without preliminary dehydrogenation. 95 wt% pure Ti₃AlC₂ powders were synthesized from TiH₂/1.1Al/2TiC at 1 450 °C for 120 min. High-purity Ti₂AlC powders were also prepared from 3TiH₂/1.5Al/C and 2TiH₂/1.5Al/TiC powders at 1 400 °C for 120 min. The as-synthesized samples were porous and easy to be ground into powders. Sn or Si additives in starting materials increased the purity of synthesized Ti₃AlC₂ obviously and expanded the temperature range for the synthesis of Ti₃AlC₂. With Si or Sn as additives, high pure Ti₃AlC₂ was synthesized at 1 200 °C for 60 min from TiH₂/x Si/Al/2TiC and TiH₂/x Sn/Al/2TiC (x = 0.1, 0.2), respectively.     

层状三元碳化物Ti3SiC2及其制备研究

三元碳化物Ti3SiC2属于层状六方晶体结构，空间群为P63／mmC；它同时具有金属和陶瓷的优良性能，有良好的导电和导热能力，在室温下可切削加工，在高温下有良好的热稳定性和塑性变形能力，还具有优异的抗氧化性能，抗热震等；应用CVD、SHS、HP／HIP等方法可制备该化合物，用HIP方法能制备高纯、致密的Ti3SiC2陶瓷。最近，以元素单质粉为原料，采用放电等离子烧结工艺成功制备了高纯Ti3SiC2材料。