选择性质子轰击DC—PBH激光器

在普通双沟平面掩埋异质结（ＤＣ－ＰＢＨ）激光器的基础上，采用质子轰击的技术，制作了一种新型的选择性质子轰击ＤＣ－ＰＨＢ激光器。这种新型的激光器结构与以前普通的ＤＣ－ＰＢＨ结构相比阈值电流降低，输出功率及量子效率得到提高，尤其是它的调制特性得到明显改善，这种结构激光器的调制带宽由原来的２．０ＧＨｚ提高到６．０ＧＨｚ。     

Theory for self-sustained pulsations in semiconductor lasers

The rate equations for semiconductor lasers are extended to include carrier diffusion and combined with a field equation. A computer program is developed for both static and dynamic cases. For some current values static solutions have not been found; the dynamic calculations show that self-sustained pulsations appear in these cases.     

Bistability and pulsations in semiconductor lasers with inhomogeneous current injection

Bistability and pulsation at microwave frequencies are observed in CW GaAs semiconductor lasers with inhomogeneous current injection. Inhomogeneous current injection is achieved with a segmented contact structure. Crucial to the understanding of the characteristics of this device is the discovery of a negative differential electrical resistance across the contacts of the absorbing section. Depending on the electrical bias condition, this negative differential resistance leads to bistability or light-jumps and self pulsations. A simple model based on conventional rate equations with a linear gain dependence on carrier density explains the observed behavior and suggests a new mechanism in inhomogeneously pumped diode lasers for light-jumps and pulsations which does not depend on the condition for the usually proposed repetitivelyQ-switching. Investigation of the switching dynamics of this bistable optoelectronic device reveals a delay time which is critically dependent on the trigger pulse amplitude and typically on the order of a few nanoseconds with power-delay products of 100 pJ. The observed critical slowing down and its origin is discussed. We also report on the characteristic of this laser coupled to an external optical cavity and we demonstrate successfully that this bistable laser can be used as a self coupled stylus for optical disk readout with an excellent signal to noise ratio.     

Intrinsic manifestation of regular pulsations in time-averaged spectra of semiconductor lasers

Time-averaged spectra of pulsating semiconductor lasers are simulated by integrating the numerical solution of multi-mode rate equations. The results obtained show that the linewidth broadening of each longitudinal mode due to the dynamic wavelength shift is accompanied by a characteristic `mode-splitting? effect arising from the integration.     

Development of self-pulsations due to self-annealing of proton bombarded regions during aging in proton bombarded stripe-geometry AlGaAs DH lasers grown by molecular beam epitaxy

Experimental observations indicate that the occurrence of optical self-pulsation in proton delineated stripe-geometry double-heterostructure junction lasers is related to the degree of gain guiding inherent in individual lasers. We show that an aging process occurs during lasing operation which has the effect of partially annealing the proton induced carrier removal concentration at the edges of the active stripe of the laser. In some lasers, the magnitude of this annealing effect is sufficiently large to flatten the active stripe carrier concentration profile thus reducing filament stability leading ultimately to optical self-pulsation. It is shown that the carrier concentration profile modification is due to the dual effects of decreasing then = 2nonradiative current component at the active stripe-proton bombarded interface as well as the geometric effect of increasing the laser active stripe width. This latter effect may be also responsible for some portion of laser threshold current increase observed during device operation.     

Generation and quenching of intensity pulsations in semiconductor lasers coupled to external cavities

The behavior of self-pulsing and nonpulsing lasers coupled to external cavities is investigated experimentally and theoretically. We investigate the dependence of the pulsation characteristics on the external cavity length using a saturable absorber model for self-pulsing lasers. It was found that quenching of self-pulsation occurs only for a certain limited range of external cavity length, and the frequencies of external-cavity induced pulsations lies within a certain range determined by the coupling coefficient. Small-signal analysis allows these ranges to be derived analytically. Hitherto, complex pulsation phenomena can be explained very intuitively by interpreting the combined laser-external cavity system as a microwave oscillator with a limited gain band and discrete mode structure.     

Tunable semiconductor lasers: a tutorial

Tunable semiconductor lasers have been listed in numerous critical technology lists for future optical communication and sensing systems. This paper summarizes a tutorial that was given at OFC '03. It includes some discussion of why tunable lasers might be beneficial, an outline of basic tuning mechanisms, some examples of tunable lasers that have been commercialized, and a discussion of control techniques. More extensive data is given for the widely-tunable sampled-grating distributed-Bragg-reflector (SGDBR) type of laser, including data for such lasers integrated monolithically with modulators to form complete transmitter front ends. A summary of reliability data for the SGDBR laser is also given. It is concluded that tunable lasers can reduce operational costs, that full-band tunability is desirable for many applications, that monolithic integration offers the most potential for reducing size, weight, power and cost, and that sufficient reliability for system insertion has been demonstrated.     

Current dependence of pulsations in semiconductor lasers due to photon induced modulation of optical loss

Pulsations in semiconductor lasers are frequently observed to occur within a range of injection currents above threshold. A model is proposed to account for the existence of the current range and attributes it to a critical optical power level at which photon induced modulation of optical loss takes place, such as due to the effect of self-focusing or lateral mode deformation. This value is estimated to be0.36 times 10^{15}photons- cm^-3for double heterostructure oxide-striped lasers.     

High-frequency pulsations in DFB lasers with amplified feedback

We describe the basic ideas behind the concept of distributed feedback (DFB) lasers with short optical feedback for the generation of high-frequency self-pulsations and show the theoretical background describing realized devices. It is predicted by theory that the self-pulsation frequency increases with increasing feedback strength. To provide evidence for this, we propose a novel device design which employs an amplifier section in the integrated feedback cavity of a DFB laser. We present results from numerical simulations and experiments. It has been shown experimentally that a continuous tuning of the self-pulsation frequency from 12 to 45 GHz can be adjusted via the control of the feedback strength. The numerical simulations, which are in good accordance with experimental investigations, give an explanation for a self-stabilizing effect of the self-pulsations due to the additional carrier dynamic in the integrated feedback cavity.     

Dynamic single-mode semiconductor lasers with a distributed reflector

Recent progress in the dynamic single-mode (DSM) semiconductor lasers in the wavelength of1.5-1.6mum are reviewed and the basic principle of DSM operation is given. Study of the DSM laser is originated for application to the wide-band optical-fiber communication in the lowest loss wavelength region of 1.5 to 1.65 μm. A DSM laser consists of a mode-selective resonator and a transverse-mode-controlled waveguide, such as the narrow-striped distributed-Bragg-reflector (DBR) laser, so as to maintain a fixed axial mode under the rapid direct modulation. The technology of monolithic integration for optical circuits is applied to realize some of DSM lasers. Structures, static and dynamic characteristics of lasing wavelength, output power, and reliability of the art DSM lasers are reviewed. The dynamic Spectral width of 0.3 nm, the output power of a few milliwatts, and the reliability over a few thousand hours are reported for experimental DSM lasers.     

Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers

The density-matrix theory of semiconductor lasers with relaxation broadening model is finally established by introducing theoretical dipole moment into previously developed treatments. The dipole moment is given theoretically by thek . pmethod and is calculated for various semiconductor materials. As a result, gain and gain-suppression for a variety of crystals covering wide wavelength region are calculated. It is found that the linear gain is larger for longer wavelength lasers and that the gain-suppression is much larger for longer wavelength lasers, which results in that single-mode operation is more stable in long-wavelength lasers than in shorter-wavelength lasers, in good agreement with the experiments.     

射线法研究两段式半导体激光器模谱

由于两区载流子密度不同，两段式双稳半导体激光器（ＴＢＬＤ）两区界面反射不为零，这将使器件的输出模谱变得复杂，利用射线法，推导了ＴＢＬＤ的端面输出模谱表达式，在此基础上讨论了界面反射的影响以及由界面及端面构成的子腔对模谱的调制。     

Injection-locked semiconductor lasers with delayed optoelectronicfeedback

Optical injection and optoelectronic feedback are efficient techniques to externally control the spectral characteristics of a semiconductor laser. This paper presents theoretical and experimental results about the effects of a delayed optoelectronic feedback loop on the stability of an optically injected diode laser. In particular, negative feedback configurations (out-of-phase carrier reinjection) are shown to widen the injection-locking domain of the laser and reduce its unstable region. On the contrary, in positive feedback configurations (in-phase carrier reinjection), the laser diode generates a modulation with tunable multigigahertz frequency     

小发散角高功率半导体激光器研究

在量子阱半导体激光器中,量子尺寸引起的衍射效应使半导体激光器的光束质量很差。分别限制结构的垂直结平面发散角在40°左右,使得光束整形系统比较复杂,限制了半导体激光器的直接应用。为解决这一问题,提出了降低垂直结平面发散角的要求。回顾了小发散角半导体激光器的技术发展及应用,对具有小发散角的模式扩展波导结构进行了理论模拟和实验验证,获得了优化的结构。采用MOCVD外延技术生长了外延片,制作了高峰值功率脉冲激光器,获得了快轴发散角小于25,°峰值功率大于80W的半导体激光器,在激光引信应用中获得良好效果。     

Optical properties of proton bombarded InP and GaInAsP

The spectral dependence of the optical absorption introduced in InP and GaInAsP by proton bombardment has been measured as a function of dose. A multienergy bombardment schedule was used in order to produce a uniformly bombarded layer 3 μm thick. The induced absorption, which increases nearly linearly with dose, extends well beyond the band edge and decreases nearly exponentially with wavelength over a broad range. A short 420°C anneal reduces this bombardment-induced absorption by more than a factor of ten.     

Internal efficiency of semiconductor lasers with a quantum-confined active region

We discuss in detail a new mechanism of nonlinearity of the light-current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outside the active region. Because of 1), the carrier density outside the active region rises with injection current, even above threshold, and because of 2), the useful fraction of current (that ends up as output light) decreases. We derive a universal closed-form expression for the internal differential quantum efficiency /spl eta//sub int/ that holds true for QD, QWR, and QW lasers. This expression directly relates the power and threshold characteristics. The key parameter, controlling /spl eta//sub int/ and limiting both the output power and the LCC linearity, is the ratio of the threshold values of the recombination current outside the active region to the carrier capture current into the active region. Analysis of the LCC shape is shown to provide a method for revealing the dominant recombination channel outside the active region. A critical dependence of the power characteristics on the laser structure parameters is revealed. While the new mechanism and our formal expressions describing it are universal, we illustrate it by detailed exemplary calculations specific to QD lasers. These calculations suggest a clear path for improvement of their power characteristics. In properly optimized QD lasers, the LCC is linear and the internal quantum efficiency is close to unity up to very high injection-current densities (15 kA/cm/sup 2/). Output powers in excess of 10 W at /spl eta//sub int/ higher than 95% are shown to be attainable in broad-area devices. Our results indicate that QD lasers may possess an advantage for high-power applications.     

Q-switching of semiconductor lasers

A scheme forQ-switching semiconductor lasers is proposed and analyzed. The method is based upon electrooptic switching of the Bragg reflectivity of the grating reflectors forming the cavity of the semiconductor laser. The basic configuration, the operating principles, and the dynamic behavior of these lasers are described. Although the maximum initial inversion in this laser system is limited to a rather low value, the peak output power is found to be higher than the value usually obtained in a CW GaAs double-heterostructure (DH) laser by two orders of magnitude. A pulsewidth shorter than 100 ps is shown to be obtainable.     

Theoretical investigation on semiconductor lasers with passivewaveguides

Semiconductor lasers with vertically integrated passive waveguides are theoretically studied using the coupled mode theory and exact calculation. Formulas for the threshold current density and the far-field patterns are derived. The physical concepts of the modulation of the beam divergence by passive waveguides are given. The exact calculated results show that the beam divergence can be greatly improved by paying a price of only a slight increase of the threshold current density. The operation mode selection is discussed. Attention is also paid to the appearance of side lobes for very narrow far-field patterns. Discussions are given for device design