Theory of mode-locked lasers containing a reverse saturable absorber

An analytic solution is presented for mode-locking a laser using a saturable absorber and reverse saturable absorber with long relaxation times compared to the temporal pulse widths. A reverse saturable absorber is a material with an excited-state absorption cross section larger than the ground-state absorption cross section, where increasing the incident light intensity increases the absorption. The reverse saturable absorber plays an important role in mode-locking laser materials where individual pulses cannot saturate the gain. A numerical example of mode-locking a CW alexandrite laser with a reverse saturable absorber and a saturable absorber is presented.     

New two-mode bistability in an asymmetric absorptive multisectionlaser diode: theoretical analysis

A novel two-mode bistable laser diode (TMBLD) with an asymmetric cavity configuration is proposed and analyzed. It consists of a gain region, a saturable absorber region, and a set of mode-selective mirrors (or filters). These elements are arranged such that the saturable absorber acts as an intracavity loss for one mode and a bleachable absorber external to the cavity of the other mode. Both modes share the same gain medium and compete for the same gain. Bleaching of the absorber leads to a switching of the modes and possible bistability. This two-mode bistability results from the complementary processes of mode competition in the gain section and the mode-dependent effective cross section of the saturable absorber. A rate equation analysis of the device indicates that a switching time less than 200 ps and a modulation rate over 3 Gb/s should be obtainable     

Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter

This paper tested and analyzed heavy ion and proton induced single event effects (SEE) of a commercial DC/DC converter based on a 600 nm Bi-CMOS technology. Heavy ion induced single event transients (SET) testing has been carried out by using the Beijing HI-13 tandem accelerator at China Institute of Atomic Energy. Proton test has been carried out by using the Canadian TRIUMF proton accelerator. Both SET cross section versus linear energy transfer (LET) and proton energy has been measured. The main study conclusions are: (1) the DC/DC is both sensitive to heavy ion and proton radiations although at a pretty large feature size (600 nm), and threshold LET is about 0.06 MeV·mg/cm²; (2) heavy ion SET saturation cross section is about 5 magnitudes order larger than proton SET saturation cross section, which is consistent with the theory calculation result deduced by the RPP model and the proton nuclear reaction model; (3) on-orbit soft error rate (SER) prediction showed, on GEO orbit, proton induced SERs calculated by the heavy ion derived model are 4-5 times larger than those calculated by proton test data.     

北京正负电子对撞机次级束质子单粒子翻转计算和试验研究

北京正负电子对撞机(BEPC)电子直线加速器试验束打靶产生的次级束中包含质子,其中能量约为50MeV~100MeV的质子占有很大比例,这弥补了国内高能质子源的空白。本工作计算得到次级束中的质子能谱,建立质子单粒子翻转截面计算方法,在北京正负电子对撞机次级束质子辐射环境中,计算静态随机存取存储器的质子单粒子翻转截面,设计了SRAM质子单粒子翻转截面测试试验,发现SRAM单粒子翻转和注量有良好的线性,这是SRAM发生单粒子翻转的证据。统计得到不同特征尺寸下SRAM单粒子翻转截面,试验数据与计算结果相符,计算和试验结果表明随着器件特征尺寸的减小器件位单粒子翻转截面减小,但器件容量的增大,翻转截面依然增大,BEPC次级束中的质子束可以开展中高能质子单粒子效应测试。     

轰击区的非辐射复合对作用区注入载流子空间分布的影响

在质子轰击型GaAs-AlGaAs DH条形激光器中,轰击区的非辐射复合速度v_B高达(7±1)×10~5厘米/秒.这对深轰击(轰击前沿越过作用层)条形激光器作用区注入载流子的空间分布必将产生重要影响.然而,过去的理论分析并未考虑此点.本文报导我们在考虑了这一因素后所得到的结果.     

A stabilized zinc diffused-proton bombarded (GaAl)As laser

A new (GaAl)As stripe laser in which a refractive index step is created by a zinc diffusion on both sides of a conventional proton stripe structure, called a diffused bombarded stripe (DBS) laser, is presented. This diffusion provides passive transverse guiding with a relatively simple technology. The index step can be adjusted by controlling the diffused zinc concentration in relation to the active region doping level. A self-alignment technique for the diffused and bombarded stripes reduces the current leakage through the diffused regions. Lasing threshold currents as low as those of conventional proton stripe lasers are obtained. A significant improvement of light-current linearity, transverse mode stability and longitudinal mode structure are observed with the DBS lasers.     

质子引入的6T SRAM单粒子翻转截面预测模型

提出了一种基于SOI工艺6T SRAM单元质子辐射的单粒子饱和翻转截面的预测模型,该模型通过器件物理来模拟辐照效应,利用版图和工艺参数来预测质子引入的单粒子饱和翻转截面。该模型采用重离子的SPICE测试程序对质子辐射的翻转截面进行预测,该方法简单高效,测试实例表明在0.15μm SOI工艺下,预测的质子引入的单粒子翻转饱和截面和实际测试的翻转截面一致。     

超材料吸波体设计及其雷达散射截面分析

设计了一种基于电磁超材料的吸波体。该吸波体是由两层金属及其中间的有耗介质组成,上层金属是由刻蚀交叉缝隙的贴片形成的电谐振器,下层金属不刻蚀,作为整个金属地板。通过优化结构参数,得到了一种极化不敏感、宽入射角的超薄吸波体,吸波率达到99.1%,厚度只有约0.01λ.通过对其雷达散射截面(RCS)的分析,表明该吸波体具有良好的RCS减缩特性,在法向方向最大减缩20 dB.实验结果与仿真结果一致,表明该吸波体在电磁隐身领域具有潜在的应用价值。     

Single event upset and total dose radiation effects on rad-hard SRAMs

Radiation hardened 16K and 64K CMOS SRAMs were tested at the Brookhaven SEU Test Facility. No failures of 16K SRAMs were observed at room temperature with any value of the feedback resistors. SEU cross section measured at elevated temperatures was a function of reduced feedback resistance. A difference was observed in critical LET forBr andAu ions. SEU cross section decreased at very high angles of incidence. After initial SEU testing, the 64K SRAM was degraded by proton total dose irradiation. An increase in the SEU cross section as well as imprinting of the memory pattern was observed. Test chips fabricated by the same technology were also submitted to proton radiation. Threshold voltage shift was measured for NMOS transistors with and without inversion bias. An increase in the density of interface states for both NMOS and PMOS transistors was measured by the charge-pumping technique. This research has been supported by the NASA grants NAG-5-929 and NAG-9-333.     

LD光纤耦合端面泵浦Nd:YVO4/Cr4+:YAG激光器

根据Siegman的被动调Q判据,Nd:YVO4晶体由于受激发射截面大、上能级寿命短,很难获得被动调Q输出。利用LD光纤耦合端面泵浦Nd:YVO4晶体,在泵浦功率3.5W时,连续运转获得最大输出1.4W,相应的光光转换效率为40%,同时采用Cr4+:YAG可饱和吸收体,成功地实现了Nd:YVO4被动调Q运转,获得了脉宽11.7ns,重复频率22kHz调Q输出。     

基于超材料完全吸收器的低RCS微带天线

为降低微带天线雷达散射截面(RCS),提出了一种基于超材料完全吸收器的微带天线。通过电磁场仿真软件设计了一种和微带天线工作频带匹配的圆环宽频带超材料吸收器,并将其加载在传统微带天线上制作成基于超材料完全吸收器的微带天线。实验结果表明,保持天线辐射性能不变的情况下,超材料吸收器可以有效减小天线RCS,其中,正面0°方向的RCS值最大缩减达到了-15.8 dB。     

Dynamic analysis of mode-locked sampled-grating distributed Braggreflector laser diodes

A mode-locked sampled-grating distributed-Bragg-reflector (SGDBR) laser diode for generating a train of light pulses at terahertz repetition rates is proposed with a numerical analysis based on a time-domain large-signal model. The device consists of three parts: the saturable absorber section which serves as a mode-locker, the gain section as an amplifier, and the SGDBR as a spectrum filter. It is predicted that spectrum filtering of the SGDBR along with passive mode locking due to the saturable absorber is effective in generating a train of transform-limited mode-locked pulses at a high repetition rate     

One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets

Singe-event upsets (SEUs) caused by high-energy protons are considered. An analytical model is proposed to represent the dependence of SEU cross section on proton energy. The model is based on a simple mechanism of proton-induced nuclear reactions in silicon. A computer simulation is conducted by the model. The results are found to agree with previous experiments. They indicate that the model enables one to predict susceptibility to proton-induced SEUs on the basis of a single value of SEU cross section measured at a proton energy higher than 100 MeV. It is shown that the approach may also work for heavy ions.     

质子轰击GaP外部电光采样

采用质子轰击 n- Ga P晶体作为外部电光采样材料 ,用倍频移相扫描电光采样技术和反射式光路结构 ,对 ITO共面波导上的微波信号进行了测量 .结果表明 ,用质子轰击的方法可以使n- Ga P样品的电阻增大四个量级 ,接近于半绝缘材料 ,能有效地减小 Ga P晶体内部自由电荷对电场的屏蔽效应 .在 2 .30 GHz微波信号时 ,质子轰击 Ga P外部电光采样测量获得了 40 m V/Hz的电压灵敏度 .     

Generation and quenching of intensity pulsations in semiconductor lasers coupled to external cavities

The behavior of self-pulsing and nonpulsing lasers coupled to external cavities is investigated experimentally and theoretically. We investigate the dependence of the pulsation characteristics on the external cavity length using a saturable absorber model for self-pulsing lasers. It was found that quenching of self-pulsation occurs only for a certain limited range of external cavity length, and the frequencies of external-cavity induced pulsations lies within a certain range determined by the coupling coefficient. Small-signal analysis allows these ranges to be derived analytically. Hitherto, complex pulsation phenomena can be explained very intuitively by interpreting the combined laser-external cavity system as a microwave oscillator with a limited gain band and discrete mode structure.     

Stimulated positron emission for 3-D tomographic imaging and bone studies. I. Method feasibility and system considerations

The feasibility and inherent performance parameters of a novel method of 3-D tomographic imaging have been studied analytically. A cross section in the patient's body is excited by high-energy X-rays ( hv>1.022 MeV) to produce positron-electron pairs. The resulting annihilation quanta are detected in coincidence by two detectors placed on opposite sides of the irradiated slice. Following a coincidence, the annihilation point is determined as the intersection of the line defined by the annihilation pair and the irradiated plane. Since the photon cross section for pair production interactions is proportional to the square of the atomic number of the absorber the image thus formed will be sensitive to atomic number and density of tissues in the irradiated slice. This technique is unique among other tomographic imaging modalities in its direct 3-D imaging capability. The application of the technique has been studied for imaging using contrast agents, and bone studies; in particular, osteoporosis and ostemalacia.     

Self-pulsation in multisection laser diodes with a DFB reflector

A novel self-pulsation regime is observed in multisection laser diodes which consist of a loss-coupled distributed-feedback (DFB) section, a phase control section, and gain sections, where 10-GHz self-pulsation due to compound cavity mode beating has been reported with the DFB section operated as a single-mode laser. When the DFB section is below threshold current, the devices give the self-pulsation in a very wide operating range. We attribute the pulsation to passive mode-locking and also confirm that this structure is applicable to 40-GHz operation.     

A sub-wavelength polarization insensitive X-band absorber based on interleaved concept

In this paper, a miniaturized absorber realized on interleaved structure across X-band is reported. The presented absorber has been designed based on the concept of complementary interleaved Brigid’s cross. Results show that the structure rejects 9.88 GHz with absorption rate of almost 99%. Moreover, the absorber is polarization independent, as it maintains stability against TE- and TM-polarizations. The results from waveguide simulator and space wave measurements provide an efficient absorber at sub-wavelength spacing.     

SRAM single event upset calculation and test using protons in the secondary beam in the BEPC

The protons in the secondary beam in the Beijing Electron Positron Collider(BEPC) are first analyzed and a large proportion at the energy of 50-100 MeV supply a source gap of high energy protons.In this study, the proton energy spectrum of the secondary beam was obtained and a model for calculating the proton single event upset(SEU) cross section of a static random access memory(SRAM) cell has been presented in the BEPC secondary beam proton radiation environment.The proton SEU cross section for different characteristic dimensions has been calculated.The test of SRAM SEU cross sections has been designed,and a good linear relation between SEUs in SRAM and the fluence was found,which is evidence that an SEU has taken place in the SRAM.The SEU cross sections were measured in SRAM with different dimensions.The test result shows that the SEU cross section per bit will decrease with the decrease of the characteristic dimensions of the device,while the total SEU cross section still increases upon the increase of device capacity.The test data accords with the calculation results,so the high-energy proton SEU test on the proton beam in the BEPC secondary beam could be conducted.     

Optical properties of proton bombarded InP and GaInAsP

The spectral dependence of the optical absorption introduced in InP and GaInAsP by proton bombardment has been measured as a function of dose. A multienergy bombardment schedule was used in order to produce a uniformly bombarded layer 3 μm thick. The induced absorption, which increases nearly linearly with dose, extends well beyond the band edge and decreases nearly exponentially with wavelength over a broad range. A short 420°C anneal reduces this bombardment-induced absorption by more than a factor of ten.