TEC 的高精度半导体激光器温控设计

热电制冷器（TEC）作为半导体激光器（LD）的制冷方案,具有体积小、易于控制等优点。但基于TEC 的制冷方案中TEC 的制冷功率和目标散热功率之间需要有良好地匹配关系,否则将会导致制冷不足或者导致功耗过大。根据LD 组件热负载匹配TEC 制冷功率,并通过比例-积分-微分（PID）控制方法实现温控参数的优化设计,实现了基于TEC 的LD 温度控制系统。经实验验证:该系统能够对LD 的工作温度实现控制范围为5℃~41℃、稳态误差小、控制精度为0.05℃的高精度、高稳定性控制,并在高精度的波长测试中得到了很好的应用。     

高精度激光温控系统设计

针对大功率半导体激光器精确温控较为困难的问题,提出了一种高精度温控系统的设计方法。该系统采用数字PID控制以及细分温度区间的方法,实现了精确温控。在对某大功率激光器的试验中,在高低温环境下,温控精度可以达到±2℃。试验结果表明,该系统温控精度高,加热/制冷效率高,为大功率半导体激光器的温度控制提供了一种良好的解决方案。     

光纤耦合激光器驱动与控制技术研究

针对一种将多个半导体激光器(LD)芯片串联驱动,通过光纤耦合进行功率合成,构成光纤耦合高功率输出激光模块的特殊驱动要求,研发了小型化高效率激光电流源组件和小型化高效率半导体制冷(TEC)LD模块温度控制组件。组件工作温度范围为-45℃～55℃,实验证明达到了设计性能指标要求。建立了LD模块驱动电流源电路的数学模型,提出了LD模块电流源控制电路的数字化实现方法,并利用ADuC831单片机实现了数字化设计。给出了一种基于TEC的LD模块温度控制组件的结构,建立了简化、实用的温度控制系统数学模型,对TEC的性能系数ξ、控制端的热量Qc和TEC的工作电流I进行了寻优控制,减小了激光器输出波长随温度的漂移。     

大功率半导体激光器驱动电源及温控系统设计

为了解决大功率半导体激光器的输出波长和功率的稳定性问题,设计了一套大功率激光器恒流驱动电源及温控系统。利用深度负反馈电路实现对激光器驱动电流的恒流控制,采用硬件比例-积分（Proportional-Integral,PI）温控电路结合恒流驱动,控制半导体制冷器（Thermoelectric Cooler,TEC）的工作电流,实现激光器工作温度的精确控制。所设计的驱动电源可实现输出电流0~12.5 A连续可调,同时具有电流检测、过流保护、晶体管-晶体管逻辑（Transistor-Transistor Logic,TTL）信号调制等功能。所设计的温控系统的控制精度可达到0.05℃,同时设定温度连续可调,温度可实时监测。实验结果表明该设计能够保证稳定的电流输出和温度控制,满足大功率激光器的使用要求。     

基于ARM的高精度可调谐LD温度控制器

为了满足高精度激光气体检测中对激光二极管(Laser Diode,简称LD)工作温度控制的高精度要求,设计了一种基于ARM的高精度可调谐LD温度控制器.由高精度温度采集模块将LD的工作温度输送给ARM控制器,ARM控制器通过PID控制算法得到控制量,驱动半导体制冷器(TEC)进行加热或制冷,使LD的工作温度稳定在设定值.经实验测试,该温度控制器的温控范围为5℃至60℃,控制精度为±0.01℃左右,具有极高的稳定性和较短的响应时间.     

大功率半导体激光器高精度温控系统研究

为了减小温度对半导体激光器输出光波长和功率稳定性的影响,设计了由恒流模块驱动半导体制冷器,通过改变恒流模块的电流来控制半导体制冷器的制冷量,利用分段积分的比例-积分-微分控制算法,选择最优控制参量,实现大功率半导体激光器的精密温控系统。系统包括高精度测温电路、控制核心DSP F28335、半导体制冷器控制电路、人机交互及通信模块。在5℃~26℃环境下对系统进行测试,实现50W大功率半导体激光器的恒温控制,温控范围为15℃~45℃,温控精度达到0.02℃。结果表明,该系统温控范围广,控制精度高,满足大功率半导体激光器的温控要求。     

大功率半导体激光器的精密模糊PID温控系统

介绍了一种大功率半导体激光器的精密模糊PID温控系统.利用半导体致冷器作为控温执行器件,构成了全固态致冷系统,并且针对TEC的驱动特性,设计了一种高精度数字PWM功率驱动器.本系统采用AT89C52单片机,利用软件实现了在线参数自整定模糊PID控制算法以及热敏电阻的非线性补偿.试验证明,温度控制精度可达±0.06℃.     

基于ARM的半导体激光精确控温系统的研制

针对传统半导体激光器冷却系统体积大、温控精度不高的特点,采用ARM9核心的S3C2410A微处理器配合单总线数字温度传感芯片DS18820,在嵌入式Linux操作系统中采用模糊自整定PID算法对半导体制冷器进行精确控制,实现对半导体激光器中冷却水的恒温控制,保证半导体激光器的稳定工作.采用软件延时的方法,解决了半导体制冷系统在加热和制冷切换过快时制冷器易碎裂的问题.该系统体积小、响应快、使用方便,具有较高的可靠性和稳定性.且可使用直流电源供电.适于车载或机载使用.试验结果验证:该系统可在室温为0～35℃的环境中实现控温范围10～30℃,控温精度±0.1℃.     

半导体激光器特性测试中温度控制技术的研究

温度特性是影响半导体激光器(LD)特性测试准确性的重要因素,对LD温度控制技术的研究有着重要的意义.在分析了LD的温度特性的基础上,提出了一种高稳定温度控制的设计方案,并从几个方面讨论了保证LD高稳定温度控制和保证温度信号检测、传输精度的方法.实验结果表明,在10℃～40℃范围内温度稳定度为±0.01℃,在25℃时稳定度达到士0.005℃,从而为LD的准确测试提供了有效的保证.此系统稍加改动即能广泛应用于各类LD的控温系统.     

一种双极性高精度半导体激光器温度控制系统

温度是影响半导体激光器（LD）寿命和输出特性的重要因素之一。为保证LD输出稳定的激光模式和功率,采用以ADC和DAC集成的微处理器芯片C8051F350和具有双极性输出电流的TEC驱动芯片MAX1968为控制核心,以积分分离和变速积分增量式相结合的数字PID算法为运算程序的自动温度控制系统(ATC)控制TEC驱动电流的方向和大小,实现对LD的加热或制冷,使其工作在恒定温度。实验证明,应用该系统,LD在0℃～40℃环境温度范围内能很快稳定在设定温度,且其不确定度为±0.03℃。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks