Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 mum 15 mum InP HBT device with maximum frequency of oscillation (f_max) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 plusmn 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.     

5~6GHz自适应线性化偏置的InGaP/GaAs HBT功率放大器

针对高质量无线局域网的传输需求,设计了一款工作在5~6 GHz的宽带磷化镓铟/砷化镓异质结双极型晶体管(InGaP/GaAs HBT)功率放大器芯片。针对HBT晶体管自热效应产生的非线性和电流不稳定现象,采用自适应线性化偏置技术,有效地解决了上述问题。针对射频系统的功耗问题,设计了改进的射频功率检测电路,以实现射频系统的自动增益控制,降低功耗。通过InGaP/GaAs HBT单片微波集成电路(MMIC)技术实现该功率放大器芯片。仿真结果表明,功放芯片的小信号增益达到32 dB;1 dB压缩点功率为28.5 dBm@5.5 GHz,功率附加效率PAE超过32%@5.5 GHz;输出功率为20 dBm时,IMD3低于-32 dBc。     

8毫米功率HBT研究

简要介绍了异质结双极晶体管（ＨＢＴ）的发展现状。对ＨＢＴ器件性能进行了理论分析、设计并制作了功率ＨＢＴ器件样品。器件性能达到：ｆ＿Ｔ＝４０ＧＨｚ，ｆ＿（ｍａｘ）＝３２ＧＨｚ，在８ＧＨｚ工作频率下测量，输出功率为１００ｍＷ，功率附加效率为３１．３％，增益为９．４ｄＢ；ｆｏ＝１２ＧＨｚ，输出功率为２３．６ｍＷ，增益６．１ｄＢ，功率附加效率为２３．４％。     

Integrated complementary HBT microwave push-pull and Darlingtonamplifiers with p-n-p active loads

The authors report the microwave results of complementary heterojunction bipolar transistor (HBT) amplifiers that integrate both n-p-n and p-n-p devices on the same chip using selective molecular beam epitaxy (MBE). An HBT wideband amplifier utilizing the Darlington configuration and implementing a p-n-p active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz     

Monolithic HEMT-HBT integration by selective MBE

We have achieved successful monolithic integration of high electron mobility transistors and heterojunction bipolar transistors in the same microwave circuit. We have used selective molecular beam epitaxy and a novel merged processing technology to fabricate monolithic microwave integrated circuits that incorporate both 0.2 μm gate-length pseudomorphic InGaAs-GaAs HEMTs and 2 μm emitter-width GaAs-AlGaAs HBTs. The HEMT and HBT devices produced by selective MBE and fabricated using our merged HEMT-HBT process exhibited performance equivalent to devices fabricated using normal MBE and our baseline single-technology processes. The selective MBE process yielded 0.2 μm HEMT devices with g_m=600 mS/mm and f_T=70 GHz, while 2×10 μm² HBT devices achieved β>50 and f_T=21.4 GHz at J_c=2×10⁴ A/cm². The performance of both a 5-10 GHz HEMT LNA with active on-chip HBT regulation and a 20 GHz Darlington HBT amplifier are shown to be equivalent whether fabricated using normal or selective MBE     

Half-terahertz operation of SiGe HBTs

This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f/sub T/) of 510 GHz at 4.5 K was measured for a 0.12/spl times/1.0 /spl mu/m/sup 2/ SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV/sub CEO/ of 1.36 V (1.47 V at 300 K), yielding an f/sub T//spl times/BV/sub CEO/ product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).     

TiSi2在微波低噪声SiGe HBT中的应用

通过在SiGe HBT外基区和多晶发射极上制作TiSi2,从而使器件的高频噪声系数得到进一步降低.以PD=200mW的SiGe HBT为例,采用TiSi2工艺的噪声系数典型值为F=1.6dB@1.1GHz,明显低于无TiSi2工艺SiGe HBT的2.0dB@1.1GHz,且频率越高,二者差别越大.     

Ultra-wideband monolithic photoreceivers using HBT-compatible HPTswith novel base circuits, and simultaneously integrated with an HBTamplifier

This paper presents two kinds of monolithically integrated ultra-wideband photoreceivers that use HBT-compatible HPTs with novel base circuits. The HPT photoreceiver, which consists of an HPT with an inductor and series resistor base circuit, yields ultra-broadband operation with 3 dB bandwidth from 0.43-12.1 GHz and over 11 dB gain compared to a photodiode with identical quantum efficiency. The HPT/HBT photoreceiver, which consists of an HPT with an inductor at the base terminal followed by an HBT amplifier circuit, yields ultra-wideband operation from 8.5-20.5 GHz (bandwidth of 12 GHz) with over 20 dB gain. The bandwidths of these photoreceivers are state-of-the art for monolithically integrated photoreceivers using HPT/HBT structures. The proposed photoreceivers, which are based on mature MMIC technologies, offer several other remarkable features such as good design accuracy and extremely small chip size     

Balanced Colpitt oscillator MMICs designed for ultra-low phase noise

Balanced voltage-controlled oscillator (VCO) monolithic microwave integrated circuits (MMICs) based on a coupled Colpitt topology with a fully integrated tank are presented utilizing SiGe heterojunction bipolar transistor (HBT) and InGaP/GaAs HBT technologies. Minimum phase noise is obtained for all designs by optimization of the tank circuit including the varactor, maximizing the tank amplitude, and designing the VCO for Class C operation. Fundamental and second harmonic VCOs are evaluated. A minimum phase noise of less than -112 dBc at an output power of 5.5 dBm is achieved at 100-kHz carrier offset and 6.4-GHz oscillation frequency for the fundamental InGaP/GaAs HBT VCO. The second harmonic VCO achieves a minimum measured phase noise of -120 dBc at 100 kHz at 13 GHz. To our best knowledge, this is the lowest reported phase noise to date for a varactor-based VCO with a fully integrated tank. The fundamental frequency SiGe HBT oscillator achieves a phase noise of -108 dBc at 100 kHz at 5 GHz. All MMICs are fabricated in commercial foundry MMIC processes.     

Integration of GalnP/GaAs heterojunction bipolar transistors andhigh electron mobility transistors

Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60, a cutoff frequency of 59 GHz and a maximum oscillation frequency of 68 GHz were obtained for a 5×15 μm² self-aligned HBT. The HEMT, with a gate length of 1.5 μm has a transconductance of 210 mS/mm, a cutoff frequency of 9 GHz and a maximum oscillation frequency of 22 GHz. It is shown that the GaInP/GaAs HBT on the HEMT is a simple Bi-FET technology suitable for microwave and mixed signal applications     

X波段功率异质结双极晶体管

讨论了 X波段功率异质结双极晶体管 (HBT)的设计 ,介绍了器件研制的工艺过程及测试结果。研制的器件在 X波段功率输出大于 5 W,功率密度达到 2 .5 W/mm。采用 76mm圆片工艺制作 ,芯片的 DC成品率高于 80 %。     

Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology

The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/lnGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/lnGaAs heterojunction bipolar transistor (HBT) process. The InP/lnGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 AAV at λ = 1.55 μm, a dark current less than 10 nA at a bias of -5 V and a -3 dB bandwidth of 10.6 GHz. Clear and opening eye diagrams were obtained for an NRZ 223-l pseudorandom code at both 2.5 and 3.0 Gbit/s. The sensitivity for a bit error ratio of 10-9 at 2.5 Gbit/s is less than -15.2 dBm.     

Low-power static frequency divider using an InP-based monolithic RTD/HBT technology

A low-power static frequency divider using an RTD/HBT MOnostable-BIstable transition Logic Element (MOBILE) scheme is proposed for the first time and operation of the circuit is demonstrated up to 20 GHz. The divided-by-two static frequency divider has been successfully implemented in an InP-based monolithic RTD/HBT IC technology. The number of devices used in the static frequency divider has been significantly reduced by using the proposed MOBILE scheme. The fabricated frequency divider operates at a clock frequency up to 20 GHz and dissipates d.c. power of 51 mW at a power supply of 3.3 V     

AlGaAs/GaAs HBTs fabricated by a self-alignment technology usingpolyimide for electrode separation

A self-aligned HBT (heterojunction bipolar transistor) technology using polymide for insulating the emitter contact from the base contact is described. A 1-μm emitter-width HBT with maximum oscillation frequency of 86 GHz was successfully fabricated. This processing was also applied to fabricate frequency-divider ICs. An operating frequency of 18 GHz was obtained with good reproducibility     

Fabrication and characteristics of a GaInP/GaAs heterojunctionbipolar transistor using a selective buried sub-collector

A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrinsic base and the sub-collector region resulting in substantial reduction of the base-collector capacitance. The experiment shows that the base-collector capacitance is reduced to about half of that of a conventional HBT while the base resistance remains unchanged resulting in a 40-50% increase in the maximum oscillation frequency. Both DC and RF characteristics are investigated and compared with a conventional HBT. A current gain of 40, cutoff frequency of 50 GHz and maximum oscillation frequency of 140 GHz were obtained for the GaInP/GaAs HBT. It is demonstrated that the selective buried sub-collector provides an effective means for enhancing RF performance of an HBT     

The effects of geometrical scaling on the frequency response andnoise performance of SiGe HBTs

We examine the geometrical scaling issues in SiGe HBT technology. Width Scaling, length scaling, and stripe-number scaling are quantified from a radio frequency (RF) design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area A_E=0.5×20×6 μm² is optimum for low noise applications at J_c=0.1 mA/μm² and f=2 GHz using the design methodology, which guarantees optimal noise and input impedance matching with the simplest matching network. Finally, the optimal device sizes at f=4 and 6 GHz for low noise applications are also obtained using the same method     

AlGaAs/GaAs HBT电压比较器

本文对异质结双极晶体管(HBT)电压比较器进行了理论分析,设计并制作了国内第一个AlGaAs/GaAs HBT电压比较器电路。首先,分析了HBT的基本工作原理;然后比较详细地分析了ECL电压比较器的工作原理并进行了设计。随后介绍了HBT的E-M模型,提取了模型参数,并对电路进行了模拟;最后全面介绍了AlGaAs/GaAs HBT电压比较器的制作过程。测试结果表明,HBT器件直流电流增益大于100,f_T为15.2GHz,f_(max)为14.8GHz;电路具有取样和锁存能力,并具有电压比较器的初步功能。     

High-efficiency Ku-band HBT MMIC power amplifier

A Ku-band monolithic HBT power amplifier was developed using a metal-organic chemical vapor deposition (MOCVD)-grown AlGaAs/GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5 V collector bias, the amplifier produced 0.5 W CW output power with 5.0 dB gain and 42% power-added efficiency in the 15-16 GHz band. When operated at a single frequency (15 GHz), 0.66 W CW output power and 5.2 dB of gain were achieved with 43% PAE     

High frequency performance of SiC heterojunction bipolartransistors

A compact heterojunction bipolar transistor (HBT) model was employed to simulate the high frequency and high power performances of SiC-based bipolar transistors. Potential 6H-SiC/3C-SiC heterojunction bipolar transistors (6H/3C-HBT's) at case temperatures of 27°C (300 K) through 600°C (873 K) were investigated. The high frequency and high power performance was compared to AlGaAs/GaAs HBT's. As expected, the ohmic contact resistance limits the high frequency performance of the SiC HBT. At the present time, it is only possible to reliably produce 1×10^-4 Ω-cm² contact resistances on SiC, so an f_T of 4.4 GHz and an f_max of 3.2 GHz are the highest realistic values. However, assuming an incredibly low 1×10^-6 Ω-cm² contact resistance for the emitter, base, and collector terminals, an f_T of 31.1 GHz and an f_max of 12.7 GHz can be obtained for a 6H/3C-SiC HBT     

Noise analysis of a photoreceiver using a P-I-N and GaAs HBT distributed amplifier combination

A noise analysis for a common-collector-cascode traveling wave HBT preamplifier is developed. The photoreceiver, consisting of a P-I-N and GaAs HBT MMIC distributed amplifier, was implemented using Nortel's f/sub T/=70 GHz GaAs HBT process, is the first to have a P-I-N mounted on the MMIC chip. The P-I-N preamplifier, having a measured bandwidth of 22 GHz, displayed a measured average equivalent input noise current density of 24 pA//spl radic/Hz. Good agreement was obtained between the predicted and measured noise performance.